Abstract: The present disclosure relates to an image registration method and a model training method thereof. The image registration method comprises obtaining a reference image and a floating image to be registered, performing image preprocessing on the reference image and the floating image, performing non-rigid registration on the preprocessed reference image and floating image to obtain a registration result image, and outputting the registration result image. The image preprocessing comprises performing, on the reference image and the floating image, coarse-to-fine rigid registration based on iterative closest point registration and mutual information registration. The non-rigid registration uses a combination of a correlation coefficient and a mean squared error between the reference image and the registration result image as a loss function.

Abstract: A method for perceiving a model of an environment, including: capturing a plurality of data while the robot moves within the environment, wherein: the plurality of data comprises at least a first data and a second data captured by a first sensor of a first sensor type and a second sensor of a second sensor type, respectively; the first sensor type is an imaging sensor; the second senor type captures movement data; an active source of illumination is positioned adjacent to the imaging sensor such that reflections of illumination light illuminating a path of the robot fall within a field of view of the imaging sensor; perceiving the model of the environment based on at least a portion of the plurality of data; storing the model of the environment in a memory; and transmitting the model of the environment to an application of a smartphone.

Abstract: An approach for creating a buried local interconnect around a DDB (double diffusion break) to reduce parasitic capacitance on a semiconductor device is disclosed. The approach utilizes a metal, as the local interconnect, buried in a cavity around the DDB region of a semiconductor substrate. The metal is disposed by two dielectric layers and the substrate. The two dielectric layers are recessed beneath two gate spacers. The buried local interconnect is recessed into the cavity where the top surface of the interconnect is situated below the top surface of the surrounding S/D (source/drain) epi (epitaxy). The metal of the local interconnect can be made from W, Ru or Co.

Abstract: A multi-view clustering method and system based on matrix decomposition and multi-partition alignment are provided.

Abstract: A semiconductor structure including a bottom source drain region arranged on a substrate, a semiconductor channel region extending vertically upwards from a top surface of the bottom source drain region, a metal gate disposed around the semiconductor channel region, a top source drain region above the semiconductor channel region, an amorphous silicon layer directly on top of the metal gate, and an oxidation layer directly on top of the amorphous silicon layer, where the amorphous silicon layer and the oxidation layer together completely separate the metal gate from a surrounding interlevel dielectric layer.

Abstract: The present disclosure relates to a method, a system, and a storage medium for segmenting a lung image. The method for segmenting a lung image comprises: obtaining medical image data containing a lung region; performing lung lobe segmentation on the medical image data to generate a plurality of lung lobe data subsets; generating updated lung image data based on one or a plurality of lung lobe data subsets in the plurality of lung lobe data subsets; and performing nidus segmentation on the updated lung image data to generate a segmentation image that identifies a pneumonia nidus.

Abstract: A technique manages objects in a software development project. In particular, in response to receiving a commit request for committing a group of objects, a group of historical commit requests associated with the group of objects are acquired based on a commit history, wherein historical commit requests in the group of historical commit requests involve the group of objects. A candidate object is selected from at least one object involved in the historical commit requests that is different from the group of objects. An association relationship between the candidate object and the group of objects is determined. The candidate object is identified as a missing object in response to determining that the association relationship satisfies a predetermined condition, the missing object indicating an object associated with the commit request but not included in the commit request. Accordingly, objects that are missing in a commit request can be automatically checked.

Abstract: A semiconductor device a first device located on a frontside of a semiconductor substrate. The semiconductor device further includes an inductor located on a backside of the semiconductor substrate and integrated with a first backside metal (BSM) stack. The semiconductor device further includes a first electrical contact located between the frontside and the backside of the semiconductor substrate. A first end of the first electrical contact is connected to the first BSM stack and a second end of the first electrical contact is connected to a first source/drain region of the first device.

Abstract: Provided in the present application are an image noise reduction method and device, an imaging system, and a non-transitory computer-readable storage medium. The image noise reduction method includes: processing, based on a first deep learning network, an original scanned object image to acquire a noise image corresponding to the original scanned object image; and acquiring a denoised image based on the original scanned object image and the noise image; wherein the first deep learning network is obtained by training based on low signal-to-noise ratio images and high signal-to-noise ratio images.

Abstract: The present invention provides semiconductor structures. The semiconductor structures may include a peripheral complimentary metal-oxide semiconductor (CMOS) substrate, a first vertical NAND cell on a first side of the CMOS substrate, and a second vertical NAND cell on a second side of the CMOS substrate opposite the first side.

Abstract: A semiconductor structure is presented including a backside contact of a nanosheet transistor positioned on a silicon (Si) layer of a wafer and a dielectric liner disposed between the backside contact and the Si layer such that the dielectric liner is located below gate spacers of the nanosheet transistor. The backside contact is closer to a backside of the wafer than a frontside of the wafer. The dielectric liner is vertically aligned with the gate spacers and the dielectric liner is vertically aligned with inner spacers of a nanosheet stack of the nanosheet transistor.

Abstract: Provided is a medium storing instructions that when executed by one or more processors of a robot effectuate operations including: obtaining, with a processor, first data indicative of a position of the robot in a workspace; actuating, with the processor, the robot to drive within the workspace to form a map including mapped perimeters that correspond with physical perimeters of the workspace while obtaining, with the processor, second data indicative of displacement of the robot as the robot drives within the workspace; and forming, with the processor, the map of the workspace based on at least some of the first data; wherein: the map of the workspace expands as new first data of the workspace are obtained with the processor; and the robot is paired with an application of a communication device.

Abstract: The disclosure generally pertains to systems and methods for predicting energy consumption in vehicles. In an example method, a predicted energy consumption model associated with a vehicle may be determined. Sensor data associated with the vehicle may be received via a plurality of sensors associated with the vehicle. A driver-based energy consumption model associated with the vehicle may then be determined based at least in part on the sensor data. An estimated energy consumption model associated with the vehicle may then be determined based at least in part on the predicted energy consumption model and the driver-based energy consumption model. A vehicle charging prediction model may then be determined based at least in part on the estimated energy consumption model.

Abstract: A robot including a chassis; a set of wheels coupled to the chassis; a range finding system coupled to the robot; a plurality of sensors; a processor; and a tangible, non-transitory, machine-readable medium storing instructions that when executed by the processor effectuates operations including: obtaining, with the processor, distances to obstacles measured by the range finding system as the robot moves relative to the obstacles; and determining, with the processor, a position of the obstacle based at least partially on the distance measurements, including: identifying, with the processor, at least one position of the range finding system when encountering the obstacle; and determining, with the processor, the position of the obstacle based at least partially on the at least one position of the range finding system when encountering the obstacle.

Abstract: Provided are a compound of formula (I), a stereoisomer, a deuterated compound, a solvate, a prodrug, a metabolite, a pharmaceutically acceptable salt or a eutectic thereof, or a pharmaceutical composition comprising same, and use thereof as a ketohexokinase inhibitor in the preparation of drugs for treating related diseases. Each group in formula (I) is as defined in the description.

Abstract: A semiconductor structure is provided that includes a first pair of stacked devices located in a first active device region and a second pair of stacked devices located in a second active device region. Each stacked device of the pair of stacked devices includes a second field effect transistor (FET) stacked over a first FET, and within each active device region the pair of stacked devices is separated by an inter-device dielectric pillar. A local interconnect structure is located in a non-active device region that is positioned between the first and second active device regions. The local interconnect structure can be connected to a back side power rail and a source/drain region of one of the second FETs, or connected to a front side signal line and a source/drain region of one of the first FETs.

Abstract: Semiconductor devices and methods of forming the same include a semiconductor base having a first width. A semiconductor device over the semiconductor base has a second width that is greater than the first width. A power rail is beneath the semiconductor base. A conductive contact extends from a top of the semiconductor device to the power rail.

Abstract: Provided is an autonomous wheeled device. A first sensor obtains first data indicative of distances to objects within an environment of the autonomous wheeled device and a second sensor obtains second data indicative of movement of the autonomous wheeled device. A processor generates at least a portion of a map of the environment using at least one of the first data and the second data and a first path of the autonomous wheeled device. The processor transmits first information to an application of a communication device paired with the autonomous wheeled device and receives second information from the application.

Abstract: Disclosed is a nitrile derivative compound represented by formula (I), a stereoisomer, a deuterated product, a co-crystal, a solvate or a pharmaceutically acceptable salt thereof, wherein each group is as defined in the description. The compound has dipeptidyl peptidase 1 inhibitory activity and can be used to prepare a drug for treating diseases including obstructive airway diseases, bronchiectasis, cystic fibrosis, asthma, emphysema, and chronic obstructive pulmonary diseases.

Abstract: Vertical transport field-effect transistors are formed on active regions wherein the active regions each include a wrap-around metal silicide contact on vertically extending side walls of the active region. Such wrap-around contacts form self-aligned and reliable strapping for SRAM bottom nFET and pFET source/drain regions. Buried contacts of SRAM cells may be used to strap the wrap-around metal silicide contacts with the gates of inverters thereof. Wrap-around metal silicide contacts provide additional contacts for logic FETs and reduce parasitic bottom source/drain resistance.