Abstract: A display substrate includes a first electrode layer, a pixel define layer, an organic light-emitting layer, a second electrode layer and a first encapsulation layer which are sequentially disposed away from a base substrate. The pixel define layer has a plurality of openings, at least one of which exposes the first electrode layer. The pixel define layer has a first climbing part and a second climbing part close to the edge of at least one opening, the distance from a surface of the second climbing part away from the base substrate to the base substrate is greater than the distance from a surface of the first climbing part away from the base substrate to the base substrate, and the slope angle of the first climbing part is different from that of the second climbing part.

Abstract: The embodiment of the disclosure provides a video encoding method and apparatus, an electronic device and a storage medium. The method includes the steps of determining a video segment included in a target video according to a duration corresponding to a first picture group parameter; determining a target feature corresponding to video encoding data of a previous video segment for a current video segment; inputting the target feature into a target decision model, and determining a picture group parameter corresponding to the current video segment by using the target decision model; and encoding the current video segment based on the picture group parameter corresponding to the current video segment.

Abstract: An electronic package is provided and includes: a carrier structure, an electronic component disposed on the carrier structure, a heat dissipation structure disposed on the electronic component, a heat conductor sandwiched between the electronic component and the heat dissipation structure, a first intermetallic compound layer formed between the heat dissipation structure and the heat conductor, and a second intermetallic compound layer formed between the heat conductor and the electronic component. Therefore, stable connections can be formed between the heat dissipation structure, the heat conductor and the electronic component via the first intermetallic compound layer and the second intermetallic compound layer to improve heat dissipation effect.

Abstract: A culture medium for hepatoma organoid culture, comprising an MST1/2 kinase inhibitor, at least one cell culture additive selected from N2 and B27, a hepatocyte growth factor, an ITS cell culture additive, Y27632, dexamethasone, Neuregulin-1, insulin, an epidermal cell growth factor, GlutaMAX, and non-essential amino acids. The application further relates to a hepatoma organoid culture method and an application thereof. By using the culture medium for hepatoma organoid, effective and rapid expansion of the hepatoma organoid can be achieved, and the organoid obtained by such expansion maintains the pathological characteristics of a patient, improves the culture success rate and the expansion rate of the hepatoma organoid, and provides a research basis for individualized treatment of the patient.

Abstract: A method includes following steps. A beating pulse of a cardiac cell is monitored by using a biologically sensitive field-effect transistor (BioFET) disposed within a semiconductor substrate. A temperature around the cardiac cell is detected by using a temperature-sensing diode disposed within the semiconductor substrate. In response to the detected temperature falling below a predetermined threshold, the cardiac cell is heated by using a heater disposed within the semiconductor substrate. The cardiac cell is placed within a fluid containment region above the BioFET, and the temperature-sensing diode occupies a larger area within the fluid containment region than the heater.

Abstract: A magnetic traction device for impacted tooth, comprising a first magnetic component fixed to a normal tooth and a second magnetic component fixed to an impacted tooth. There is an attractive magnetic force between the first and second magnetic components, thereby pulling the impacted tooth toward the direction of the normal tooth where the first magnetic component is located.

Abstract: A device includes a substrate, a channel layer, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, and a bottom dielectric structure. The channel layer is over the substrate. The gate structure is across the channel layer. The first source/drain epitaxial structure and the second source/drain epitaxial structure are on opposite sides of the channel layer and are connected to the channel layer. The bottom dielectric structure is between the first source/drain epitaxial structure and the substrate. A maximum width of the first source/drain epitaxial structure is greater than or equal to a maximum width of the bottom dielectric structure in a cross-sectional view.

Abstract: An aerial vehicle is configured to operate within indoor spaces. The aerial vehicle is programmed with positions of waypoints within three-dimensional space, and to calculate a trajectory for traveling through such waypoints in a manner that minimizes snap of the aerial vehicle. Where a distance between a pair of the waypoints is sufficiently long, the aerial vehicle inserts intervening waypoints for planning purposes, and programs the aerial vehicle to travel at a maximum speed between the intervening waypoints. Upon detecting an obstacle with a first range using one or more sensors, the aerial vehicle reduces its speed and monitors a second, shorter range using the sensors, and compensates for motion between such readings.

Abstract: A method of forming semiconductor devices having improved work function layers and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes depositing a gate dielectric layer on a channel region over a semiconductor substrate; depositing a first p-type work function metal on the gate dielectric layer; performing an oxygen treatment on the first p-type work function metal; and after performing the oxygen treatment, depositing a second p-type work function metal on the first p-type work function metal.

Abstract: A method for forming a semiconductor device and a semiconductor device formed by the method are disclosed. In an embodiment, the method includes depositing a dummy dielectric layer on a fin extending from a substrate; depositing a dummy gate seed layer on the dummy dielectric layer; reflowing the dummy gate seed layer; etching the dummy gate seed layer; and selectively depositing a dummy gate material over the dummy gate seed layer, the dummy gate material and the dummy gate seed layer constituting a dummy gate.

Abstract: The present application relates to a power-off protection method and apparatus, a device, and a storage medium. The main technical solution includes: in response to power sourcing equipment (PSE) being about to stop supplying power to a power device (PD) within a predetermined time, sending a first link layer discovery protocol (LLDP) message to the PD; receiving a second LLDP message, which is replied by the PD according to the first LLDP message; and powering off the PD according to the second LLDP message. The present application can not only avoid the interruption of the current tasks of a PD as much as possible, but can also record power-off reasons, so as to facilitate tracing to maintain the normal operation of a device, thereby ensuring the security of data and the device.

Abstract: Task assignment for multi-robot systems (MRSs) in a smart factory (Industry 4.0) is described. Aspects are directed to a hypergraph based MRS and production model facilitating the cooperation among robots and serving frequent reconfiguration desired in Industry 4.0. Aspects are directed to a time complexity friendly search algorithm for real-time application using a hypergraph model to get task assignment(s). Parameters are provided for a tradeoff between solution optimality and time complexity. In an implementation, an example system can include a MRS including robots, wherein the MRS is configured to perform a manufacturing task, and a computing device configure to perform a multi-robot task allocation (MRTA) for the MRS. In an implementation, an example method can include generating task assignments, using MRTA, for robots of a MRS including the robots, wherein the MRS is configured to perform a manufacturing task, and providing the task assignments to the MRS.

Abstract: Alignment of devices formed on substrates that are to be bonded may be achieved through the use of scribe lines between the devices, where the scribe lines progressively increase or decrease in size from a center to an edge of one or more of the substrates to compensate for differences in the thermal expansion rates of the substrates. The devices on the substrates are brought into alignment as the substrates are heated during a bonding operation due to the progressively increased or decreased sizes of the scribe lines. The scribe lines may be arranged in a single direction in a substrate to compensate for thermal expansion along a single axis of the substrate or may be arranged in a plurality of directions to compensate for actinomorphic thermal expansion.

Abstract: A portable robotic semiconductor pod loader may detect, with at least one sensor, receipt of a semiconductor pod on a load port of the portable robotic semiconductor pod loader. The at least one sensor is supported by the load port. The portable robotic semiconductor pod loader may cause a robot, of the portable robotic semiconductor pod loader, to align with the semiconductor pod provided on the load port. The portable robotic semiconductor pod loader may cause the robot to attach to the semiconductor pod, and may cause the robot to provide the semiconductor pod from the load port to a staging area of a semiconductor processing tool.

Abstract: A semiconductor structure including device structures arranged in a stack is provided. The device structures include substrates and through-substrate vias (TSVs). The TSVs are located in the substrates. The TSVs includes first TSVs. Each of the device structures includes the corresponding substrate and the corresponding first TSV. Each of the first TSVs passes through the corresponding substrate. The number of the TSVs in the endmost device structure is less than the number of the TSVs in another of the device structures. The first TSV in the endmost device structure and the first TSV in another of the device structures are aligned with each other and electrically connected to each other.

Abstract: A device includes a substrate. A first channel region of a first transistor overlies the substrate and a source/drain region is in contact with the first channel region. The source/drain region is adjacent to the first channel region along a first direction, and the source/drain region has a first surface opposite the substrate and side surfaces extending from the first surface. A dielectric fin structure is adjacent to the source/drain region along a second direction that is transverse to the first direction, and the dielectric fin structure has an upper surface, a lower surface, and an intermediate surface that is disposed between the upper and lower surfaces. A silicide layer is disposed on the first surface and the side surfaces of the source/drain region and on the intermediate surface of the dielectric fin structure.

Abstract: Provided herein are defect-free solid-state separators which are useful as Li+ ion-conducting electrolytes in electrochemical cells and devices, such as, but not limited to, rechargeable batteries. In some examples, the separators have a Li+ ion-conductivity greater than 1*10?3 S/cm at room temperature.

Abstract: Systems, apparatus, articles of manufacture, and methods are disclosed to implement seamless switching of dynamic range and/or refresh rate on display devices. An example apparatus disclosed herein causes a display to activate panel self refresh after a command to switch a graphics output from a first dynamic range to a second dynamic range, the graphics output provided to the display. The example apparatus also switches the graphics output from the first dynamic range to the second dynamic range after the panel self refresh is activated. The example apparatus further causes the display to deactivate the panel self refresh after the graphics output is switched to the second dynamic range.

Abstract: A pest control method includes providing a pest control composition or a vapor thereof in a space to kill at least one kind of pests in the space by toxicity. The pest control composition at least includes an active ingredient in an effective amount, and the active ingredient is an alkane with 10, 12, 14, or 16 carbon atoms or an isomer thereof.

Abstract: A urine collecting and analyzing apparatus for a toilet. the apparatus including a housing with a seat riser that mounts to the toilet rim and a measurement chamber that extends downwardly into the bowl. a urine collecting basin. a flushing system to clean the apparatus. and a controller for data processing and transmission. The basin has a bowl shape to collect urine for testing and is composed of two side panels or two side panels and a front panel. The panels are moved between a storage position along the housing and a collecting position forming the basin by a motorized mechanism. A transfer tube with a flow rate sensor and pump connects the basin to the measurement chamber. The flushing system feeds water through a flushing tube into the basin through an array of nozzles and cleans the entire surface of the basin.