Patents by Inventor Cheng Han

Cheng Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230369516
    Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating. wherein the composite etch stop mask layer includes a silicon nitride layer and a stressed layer. A percentage of Si—H bonds in the silicon nitride layer is greater than a percentage of Si—H bonds in the stressed layer.
    Type: Application
    Filed: July 18, 2023
    Publication date: November 16, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Han LIN, Chao-Ching CHANG, Yi-Ming LIN, Yen-Ting CHOU, Yen-Chang CHEN, Sheng-Chan LI, Cheng-Hsien CHOU
  • Publication number: 20230369084
    Abstract: A lithography includes a storage tank that stores process chemical fluid, an anti-collision frame, and an integrated sensor assembly. The storage tank includes a dispensing port positioned at a lowest part of the storage tank in a gravity direction. The anti-collision frame is coupled to the storage tank. An integrated sensor assembly is disposed on at least one of the anti-collision frame and the storage tank to measure a variation in fluid quality in response to fluid quality measurement of fluid.
    Type: Application
    Filed: July 24, 2023
    Publication date: November 16, 2023
    Inventors: Tzu-Yang LIN, Cheng-Han WU, Chen-Yu LIU, Kuo-Shu TSENG, Shang-Sheng LI, Chen Yi HSU, Yu-Cheng CHANG
  • Patent number: 11817499
    Abstract: In certain embodiments, a semiconductor device includes a substrate having an n-doped well feature and an epitaxial silicon germanium fin formed over the n-doped well feature. The epitaxial silicon germanium fin has a lower part and an upper part. The lower part has a lower germanium content than the upper part. A channel is formed from the epitaxial silicon germanium fin. A gate is formed over the epitaxial silicon germanium fin. A doped source-drain is formed proximate the channel.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: November 14, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shahaji B. More, Huai-Tei Yang, Shih-Chieh Chang, Shu Kuan, Cheng-Han Lee
  • Publication number: 20230363209
    Abstract: The present disclosure provides a display substrate, a manufacturing method thereof, and a display device. The display substrate includes a pixel define layer and a post spacer disposed on a driving structure layer, wherein the post spacer is disposed on a surface of the pixel define layer at one side away from the driving structure layer, and an orthographic projection of the post spacer on a substrate is within an orthographic projection of the pixel define layer on the substrate; there is a protrusion on a surface of the post spacer at one side away from the driving structure layer, a height of the protrusion being less than 0.2 µm.
    Type: Application
    Filed: March 19, 2021
    Publication date: November 9, 2023
    Inventors: Cheng HAN, Xin LI, Qixiao WU, Songquan WU, Meng SUN, Xing FAN, Yansong LI
  • Publication number: 20230363107
    Abstract: A fluid distribution assembly is adapted for at least one heat source and includes at least one housing having a coolant chamber and at least one fluid-driving component in fluid communication with the coolant chamber configured for accommodating the at least one heat source, and the at least one fluid-driving component is configured to pump fluid out of the coolant chamber.
    Type: Application
    Filed: September 26, 2022
    Publication date: November 9, 2023
    Inventors: Sheng Yen LIN, Cheng Han Chiang
  • Publication number: 20230363208
    Abstract: A display substrate includes a first electrode layer, a pixel define layer, an organic light-emitting layer, a second electrode layer and a first encapsulation layer which are sequentially disposed away from an base substrate. The pixel define layer has a plurality of openings, at least one of which exposes the first electrode layer. The pixel define layer has a first climbing part and a second climbing part close to the edge of at least one opening, the distance from a surface of the second climbing part away from the base substrate to the base substrate is greater than the distance from a surface of the first climbing part away from the base substrate to the base substrate, and the slope angle of the first climbing part is different from that of the second climbing part.
    Type: Application
    Filed: April 26, 2021
    Publication date: November 9, 2023
    Inventors: Xing FAN, Shantao CHEN, Xin LI, Hao GAO, Cheng HAN, Yansong LI
  • Patent number: 11810786
    Abstract: A method for fabricating a semiconductor device includes following steps: A patterned mask layer including a plurality of standing walls and a covering part is formed on a surface of a semiconductor substrate, wherein two adjacent standing walls define a first opening exposing a part of the surface, and the covering part blankets the surface. A first patterned photoresist layer is formed to partially cover the covering part. A first etching process is performed to form a first trench in the substrate, passing through the surface and aligning with the first opening. A portion of the patterned mask layer is removed to form a second opening exposing another portion of the surface. A second etching process is performed to form a second trench in the substrate and define an active area on the surface. The depth of the first trench is greater than that of the second trench.
    Type: Grant
    Filed: July 27, 2021
    Date of Patent: November 7, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Po-Wen Su, Cheng-Han Lu
  • Patent number: 11800810
    Abstract: A magnetic field sensor structure includes a magnetoresistive sensor assembly and a transistor assembly. A dielectric layer is deposited on the transistor assembly. The dielectric layer includes a trench that exposes an interconnect of the transistor assembly. A damascene process is performed to form an ultra-thick metal (UTM) layer within the trench to create a first metal coil. The first metal coil is configured as a first reset component. Another dielectric layer is formed on the first metal coil. A flux guide is formed within the another dielectric layer. A second metal coil is formed over the another dielectric layer. The second metal coil is configured as a second reset component. The first reset component and the second reset component are configured as a reset mechanism, which is responsive to the transistor assembly and operable to magnetize the flux guide to a predetermined orientation.
    Type: Grant
    Filed: November 25, 2020
    Date of Patent: October 24, 2023
    Assignee: Robert Bosch GmbH
    Inventors: Phillip Mather, Cheng-Han Yang
  • Publication number: 20230334456
    Abstract: Systems and methods for processing transactions using a digital payment platform.
    Type: Application
    Filed: May 15, 2023
    Publication date: October 19, 2023
    Inventors: Osama Bedier, Ray Tanaka, Victor Chau, Charles Feng, Cheng Han Lee, Lubab Al-Khawaja
  • Publication number: 20230335630
    Abstract: A high-electron mobility transistor includes a substrate, a gate electrode, a drain electrode, a source electrode and a first field plate. The substrate includes an active region. The gate electrode is disposed on the substrate. The drain electrode is disposed at one side of the gate electrode. The source electrode is disposed at another side of the gate electrode. The first field plate is electrically connected with the source electrode and extends from the source electrode toward the drain electrode. An overlapping area of the first field plate and the gate electrode is smaller than an overlapping area of the gate electrode and the active region.
    Type: Application
    Filed: May 11, 2022
    Publication date: October 19, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Jian-Li Lin, Cheng-Guo Chen, Ta-Kang Lo, Cheng-Han Wu
  • Publication number: 20230333664
    Abstract: A head mounted display, tapping input signal generating method, and non-transitory computer readable storage medium thereof are provided. Based on a plurality of real-time images, the head-mounted display determines whether a first finger among the plurality of fingers corresponds to a tapping pattern. The head-mounted display determines whether a sensing signal received from a wearable device matches a tapping gesture of the first finger in response to having the first finger among the fingers corresponding to the tapping pattern. The head-mounted display generates a tapping input signal corresponding to the first finger in response to the sensing signal matching the tapping gesture of the first finger.
    Type: Application
    Filed: April 13, 2023
    Publication date: October 19, 2023
    Inventors: Chao-Hsiang LAI, Cheng-Han HSIEH, HsinYu FENG
  • Publication number: 20230328924
    Abstract: A liquid cooling device is applied to a plurality of optical transceivers of an electronic apparatus. The liquid cooling device includes a main body, a channel module and a tube module. The main body has an accommodating structure, an inlet structure and an outlet structure. The inlet structure and the outlet structure are connected to the accommodating structure. The main body covers at least a part of the plurality of optical transceivers. The channel module is disposed inside the accommodating structure. The tube module has an inlet tube and an outlet tube respectively disposed on the inlet structure and the outlet structure.
    Type: Application
    Filed: August 9, 2022
    Publication date: October 12, 2023
    Applicant: Wistron Corporation
    Inventors: Cheng-Han Chiang, Cheng-Wei Chen, Yu-Chuan Wu, Hua Chen
  • Publication number: 20230317795
    Abstract: A method includes forming an N well and a P well in a substrate; depositing a first layer having silicon over the N well and the P well; depositing a first dielectric layer over the first layer; forming a resist pattern over the first dielectric layer, the resist pattern providing an opening directly above the N well; etching the first dielectric layer and the first layer through the opening, leaving a first portion of the first layer over the N well; removing the resist pattern; and epitaxially growing a second layer having silicon germanium (SiGe) over the first portion of the first layer. The epitaxially growing the second layer includes steps of (a) performing a baking process, (b) depositing a silicon seed layer, and (c) depositing a SiGe layer over the silicon seed layer, wherein the steps (a), (b), and (c) are performed under about a same temperature.
    Type: Application
    Filed: June 5, 2023
    Publication date: October 5, 2023
    Inventors: Shahaji B. More, Shu Kuan, Cheng-Han Lee
  • Patent number: 11774691
    Abstract: A light-emitting device and a light emitting module are provided. The light emitting module includes a housing, at least one light guide element, and at least one light emitting element. The housing includes at least one passage passing through its a first surface and a second surface, and a coupling portion formed on an inner surface adjacent to the second surface. The light guide element arranged in the at least one passage has a light emergent surface exposed at one end of the at least one passage and a light incident surface exposed at the other end of the at least one passage. The light emitting element is coupled to the housing by the coupling portion. The light emitting element includes a light emitting surface facing to the light incident surface of the light guide element and a soldering portion exposed from the housing.
    Type: Grant
    Filed: May 18, 2021
    Date of Patent: October 3, 2023
    Assignees: LITE-ON OPTO TECHNOLOGY (CHANGZHOU) CO., LTD., LITE-ON TECHNOLOGY CORPORATION
    Inventors: Cheng-Han Wang, Szu-Tsung Kao, Chih-Li Yu, Cheng-Hong Su, Chun-Wei Huang, Chen-Hsiu Lin
  • Patent number: 11776769
    Abstract: A key structure, including a base plate, a thin film circuit, a dome switch, a scissor structure, an elastic piece, and a keycap, is provided. The thin film circuit is disposed on the base plate. The dome switch is disposed on the thin film circuit. The scissor structure is disposed on the base plate, wherein the scissor structure includes a first support and a second support pivotally connected to the first support, and the second support surrounds the first support. The first support has a trigger part, and the second support has a chamber disposed corresponding to the trigger part. The elastic piece is engaged inside the chamber, wherein the elastic piece has an interfering part located outside the chamber, and the interfering part is located on a moving path of the trigger part. The keycap is disposed on the scissor structure and the dome switch.
    Type: Grant
    Filed: June 28, 2022
    Date of Patent: October 3, 2023
    Assignee: Acer Incorporated
    Inventors: Hung-Chi Chen, Cheng-Han Lin
  • Patent number: 11776851
    Abstract: A method includes providing a substrate having a gate structure over a first side of the substrate, forming a recess adjacent to the gate structure, and forming in the recess a first semiconductor layer having a dopant, the first semiconductor layer being non-conformal, the first semiconductor layer lining the recess and extending from a bottom of the recess to a top of the recess. The method further includes forming a second semiconductor layer having the dopant in the recess and over the first semiconductor layer, a second concentration of the dopant in the second semiconductor layer being higher than a first concentration of the dopant in the first semiconductor layer.
    Type: Grant
    Filed: May 2, 2022
    Date of Patent: October 3, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Yu Ma, Zheng-Yang Pan, Shahaji B. More, Shih-Chieh Chang, Cheng-Han Lee
  • Patent number: 11769678
    Abstract: A lithography includes a storage tank that stores process chemical fluid, an anti-collision frame, and an integrated sensor assembly. The storage tank includes a dispensing port positioned at a lowest part of the storage tank in a gravity direction. The anti-collision frame is coupled to the storage tank. An integrated sensor assembly is disposed on at least one of the anti-collision frame and the storage tank to measure a variation in fluid quality in response to fluid quality measurement of fluid.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: September 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tzu-Yang Lin, Cheng-Han Wu, Chen-Yu Liu, Kuo-Shu Tseng, Shang-Sheng Li, Chen Yi Hsu, Yu-Cheng Chang
  • Publication number: 20230300775
    Abstract: Differing operations of a wireless communication device benefit from different antenna configurations, such as for positioning, where closely spaced antennas are desirable, and data communication, where antenna diversity is desirable. A device is configured to receive a request for receive a request for determining a position of a user equipment (UE), select one of a first plurality of antennas or a second plurality of antennas for determining the position of the UE, receive wireless signals using the selected first plurality of antennas or the second plurality of antennas, and determine the position of the UE based at least in part on the received wireless signals.
    Type: Application
    Filed: March 21, 2022
    Publication date: September 21, 2023
    Inventors: Le Nguyen LUONG, Liang ZHAO, Cheng-Han WANG, Santosh Kumar GUPTA, Shishir GUPTA, Michael KOHLMANN, Xiaoxin ZHANG
  • Publication number: 20230300568
    Abstract: Disclosed are systems and techniques for wireless communications. For example, a first user equipment (UE) can receive positioning data corresponding to a second UE. In some cases, the first UE can determine a relative position between the first UE and the second UE. In some aspects, the first UE can determine a first location estimate of the first UE based on the positioning data corresponding to the second UE and the relative position between the first UE and the second UE.
    Type: Application
    Filed: March 18, 2022
    Publication date: September 21, 2023
    Inventors: Liang ZHAO, Le Nguyen LUONG, Rayman Wai PON, Cheng-Han WANG, Bala RAMASAMY, Santosh Kumar GUPTA, Michael KOHLMANN
  • Patent number: 11760781
    Abstract: Compositions and methods for modifying the production levels of alkaloids in plants are provided. Alkaloid production can be genetically controlled by modulating the transcriptional activation of PMT genes mediated by members of the ERF family and/or Myc family of transcription factors. Novel nucleotide sequences encoding the Myc family of transcription factors are also provided.
    Type: Grant
    Filed: November 2, 2021
    Date of Patent: September 19, 2023
    Assignee: UNIVERSITY OF VIRGINIA PATENT FOUNDATION
    Inventors: Michael Paul Timko, Paul J Rushton, Sheng-Cheng Han, Hongbo Zhang, Marta Tatiana Bokowiec