Abstract: This invention provides an OLED display substrate, a method for manufacturing the same, and a display device, which belongs to the technical field of displays. The OLED display substrate includes: a drive substrate, the drive substrate being provided with a light-emitting unit; and an encapsulation structure covering the light-emitting unit. The encapsulation structure comprises a first inorganic structure, an organic layer and a second inorganic structure arranged in sequence along a direction away from the drive substrate. A refractive index of the first inorganic structure is higher than a refractive index of the organic layer, the first inorganic structure comprises at least one inorganic layer, and a thickness of one inorganic layer of the at least one inorganic layer is not larger than 500 nm. With the technical solution of this invention, the display effect of the OLED display substrate can be improved.

Abstract: A motion computing system for virtual reality is provided, which comprises a wearable device and a head-mounted display. The head-mounted display performs following steps for: setting a wearing position of the wearable device; determining whether to generate a hand model having finger skeleton data for the hand of the user is found in a monitored field by a hand tracking algorithm; in response respond to that determine the hand model is found in the monitored field, identifying a device position according to the wearing position and the finger skeleton data, and identifying a device rotation of the wearable device in the monitored field according to the inertial data; calculating a pointer direction in the monitored field according to the device position and the device rotation; and generating a ray in a virtual reality field according to the pointer direction and the device position.

Abstract: A method of supplying a chemical solution to a photolithography system. The chemical solution is pumped from a variable-volume buffer tank. The pumped chemical solution is dispensed in a spin-coater. The variable-volume buffer tank is refilled by emptying a storage container filled with the chemical solution into the variable-volume buffer tank.

Abstract: A device includes a first gate region having a first gate length; a first spacer on a sidewall of the first gate region; a semiconductor layer over the first gate region; a second gate region over the semiconductor layer, wherein the second gate region has a second gate length equal to the first gate length; and a second spacer on a sidewall of second gate region, wherein the second spacer is wider than the first spacer.

Abstract: The present disclosure provides a human-computer interaction method and system. The method includes following operations: by a motion sensor, sensing a hand movement to generate a movement signal; by a camera module, capturing a plurality of images of the hand movement; by at least one processor, generating a plurality of feature values according to the movement signal adjusted based on hand movement information, wherein the hand movement information is generated by analyzing the plurality of images of the hand movement; and by the at least one processor, controlling a virtual object by a first hand gesture determined by a hand gesture determination model according to the plurality of feature values.

Abstract: A system of automatically recognizing a malocclusion class is disclosed. The disclosure is to compute an occlusion grade based on an occlusion image, compute a lower teeth profile grade based on a lower teeth profile image, compute an upper teeth profile grade based on an upper teeth profile image, compute a side face profile grade based on a side face image, and determine a credibility of a malocclusion class based on the grades. A method and a computer program are also disclosed.

Abstract: In certain embodiments, a semiconductor device includes a substrate having an n-doped well feature and an epitaxial silicon germanium fin formed over the n-doped well feature. The epitaxial silicon germanium fin has a lower part and an upper part. The lower part has a lower germanium content than the upper part. A channel is formed from the epitaxial silicon germanium fin. A gate is formed over the epitaxial silicon germanium fin. A doped source-drain is formed proximate the channel.

Abstract: A method for forming a semiconductor device includes patterning a substrate to form a strip including a first semiconductor material, forming an isolation region along a sidewall of the strip, an upper portion of the strip extending above the isolation region, forming a dummy structure along sidewalls and a top surface of the upper portion of the strip, performing a first etching process on an exposed portion of the upper portion of the strip to form a first recess, the exposed portion of the strip being exposed by the dummy structure, after performing the first etching process, reshaping the first recess to have a V-shaped bottom surface using a second etching process, wherein the second etching process is selective to first crystalline planes having a first orientation relative to second crystalline planes having a second orientation, and epitaxially growing a source/drain region in the reshaped first recess.

Abstract: The invention discloses an electronic device. The electronic device comprises a body and a function module. The function module is rotatably disposed in the body, and includes a housing, a function component and a rigid-flex circuit board. The housing includes a shaft portion. The shaft portion is engaged to the body. The function component and the rigid-flex circuit board are disposed in the housing. The rigid-flex circuit board includes a rigid board portion and at least a flexible board portion. The rigid board portion is electrically connected to the function component. The flexible board portion is connected to the rigid board portion. The flexible board portion passes through the shaft portion and extends into the body.

Abstract: A camera module includes a housing with an opening and a portion that surrounds the opening, wherein the portion of the housing is transparent to near infrared (NIR) light. A fisheye lens is disposed within the opening such that a portion of the fisheye lens protrudes through the opening. An image sensor is disposed within the housing and optically coupled to the fisheye lens. The image sensor is sensitive to visible light and NIR light. A plurality of NIR light emitters is disposed within the housing. The NIR light emitters are configured to emit NIR light through the NIR-transparent portion of the housing. The NIR-transparent portion of the housing may include a light-diffusing structure, such as a pattern of microlenses formed on an inner surface of the NIR-transparent portion of the housing, to spread out the NIR light emitted by the NIR light emitters.

Abstract: The present disclosure provides an electroluminescent device and a method for preparing the same, a display panel and a display device. The electroluminescent device includes a light emitting layer, a cathode layer, and an electron transport layer arranged between the light emitting layer and the cathode layer. The electron transport layer includes at least a first electron transport material and a second electron transport material that have different LUMO energy levels, and a ratio EM1/EM2 of the weight content of the first electron transport material to that of the second electron transport material decreases in a direction from a surface thereof proximate to the cathode layer to a surface thereof proximate to the light emitting layer. The electroluminescent device of the present disclosure can improve its efficiency and lifetime.

Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating. wherein the composite etch stop mask layer includes a silicon nitride layer and a stressed layer. A percentage of Si—H bonds in the silicon nitride layer is greater than a percentage of Si—H bonds in the stressed layer.

Abstract: A lithography includes a storage tank that stores process chemical fluid, an anti-collision frame, and an integrated sensor assembly. The storage tank includes a dispensing port positioned at a lowest part of the storage tank in a gravity direction. The anti-collision frame is coupled to the storage tank. An integrated sensor assembly is disposed on at least one of the anti-collision frame and the storage tank to measure a variation in fluid quality in response to fluid quality measurement of fluid.

Abstract: In certain embodiments, a semiconductor device includes a substrate having an n-doped well feature and an epitaxial silicon germanium fin formed over the n-doped well feature. The epitaxial silicon germanium fin has a lower part and an upper part. The lower part has a lower germanium content than the upper part. A channel is formed from the epitaxial silicon germanium fin. A gate is formed over the epitaxial silicon germanium fin. A doped source-drain is formed proximate the channel.

Abstract: The present disclosure provides a display substrate, a manufacturing method thereof, and a display device. The display substrate includes a pixel define layer and a post spacer disposed on a driving structure layer, wherein the post spacer is disposed on a surface of the pixel define layer at one side away from the driving structure layer, and an orthographic projection of the post spacer on a substrate is within an orthographic projection of the pixel define layer on the substrate; there is a protrusion on a surface of the post spacer at one side away from the driving structure layer, a height of the protrusion being less than 0.2 µm.

Abstract: A fluid distribution assembly is adapted for at least one heat source and includes at least one housing having a coolant chamber and at least one fluid-driving component in fluid communication with the coolant chamber configured for accommodating the at least one heat source, and the at least one fluid-driving component is configured to pump fluid out of the coolant chamber.

Abstract: A display substrate includes a first electrode layer, a pixel define layer, an organic light-emitting layer, a second electrode layer and a first encapsulation layer which are sequentially disposed away from an base substrate. The pixel define layer has a plurality of openings, at least one of which exposes the first electrode layer. The pixel define layer has a first climbing part and a second climbing part close to the edge of at least one opening, the distance from a surface of the second climbing part away from the base substrate to the base substrate is greater than the distance from a surface of the first climbing part away from the base substrate to the base substrate, and the slope angle of the first climbing part is different from that of the second climbing part.

Abstract: A method for fabricating a semiconductor device includes following steps: A patterned mask layer including a plurality of standing walls and a covering part is formed on a surface of a semiconductor substrate, wherein two adjacent standing walls define a first opening exposing a part of the surface, and the covering part blankets the surface. A first patterned photoresist layer is formed to partially cover the covering part. A first etching process is performed to form a first trench in the substrate, passing through the surface and aligning with the first opening. A portion of the patterned mask layer is removed to form a second opening exposing another portion of the surface. A second etching process is performed to form a second trench in the substrate and define an active area on the surface. The depth of the first trench is greater than that of the second trench.

Abstract: A magnetic field sensor structure includes a magnetoresistive sensor assembly and a transistor assembly. A dielectric layer is deposited on the transistor assembly. The dielectric layer includes a trench that exposes an interconnect of the transistor assembly. A damascene process is performed to form an ultra-thick metal (UTM) layer within the trench to create a first metal coil. The first metal coil is configured as a first reset component. Another dielectric layer is formed on the first metal coil. A flux guide is formed within the another dielectric layer. A second metal coil is formed over the another dielectric layer. The second metal coil is configured as a second reset component. The first reset component and the second reset component are configured as a reset mechanism, which is responsive to the transistor assembly and operable to magnetize the flux guide to a predetermined orientation.

Abstract: Systems and methods for processing transactions using a digital payment platform.