Abstract: A method of manufacturing a semiconductor device includes forming a multilayer photoresist stack over a substrate, in which the multilayer photoresist stack has a first photoresist layer and a second photoresist layer over the first photoresist layer, and the second photoresist layer is less reactive to hydrogen than the first photoresist layer, exposing the multilayer photoresist stack to an EUV radiation, and developing the exposed multilayer photoresist stack.

Abstract: Compounds for use in prevention and/or treatment of pain are disclosed. The compounds are derived by conjugation of N6-(4-hydroxybenzyl)adenosine and analogous compounds with amino acids or peptides. In one embodiment of the invention, the compound is 5?-O-(glycine-N-carbonyl-N6-(4-hydroxybenzyl)adenosine (I-a1). In another embodiment of the invention, the compound is 5-deoxy-5?-(glycine-N-amido)-N6-(4-hydroxybenzyl)adenosine (I-d1). Also disclosed are methods of making and using the same.

Abstract: A testing apparatus for a semiconductor package includes a circuit board, testing patterns and a socket. The circuit board has a testing region and includes a plurality of testing contacts and a plurality of signal contacts distributed in the testing region. The testing patterns are embedded in the circuit board and electrically connected to the testing contacts, where each of the testing patterns includes a first conductive line and a second conductive line including a main portion and a branch portion connected to main portion. The first conductive line is connected to the main portion. The socket is located on the circuit board and comprising connectors electrically connected to the circuit board, wherein the connectors are configured to transmit electric signals for testing the semiconductor package from the testing apparatus.

Abstract: A motion computing system for virtual reality is provided, which comprises a wearable device and a head-mounted display. The head-mounted display performs following steps for: setting a wearing position of the wearable device; determining whether to generate a hand model having finger skeleton data for the hand of the user is found in a monitored field by a hand tracking algorithm; in response respond to that determine the hand model is found in the monitored field, identifying a device position according to the wearing position and the finger skeleton data, and identifying a device rotation of the wearable device in the monitored field according to the inertial data; calculating a pointer direction in the monitored field according to the device position and the device rotation; and generating a ray in a virtual reality field according to the pointer direction and the device position.

Abstract: An extreme ultraviolet (EUV) photolithography system cleans debris from an EUV reticle. The system includes a cleaning electrode configured to be positioned adjacent the EUV reticle. The system includes a voltage source that helps draw debris from the EUV reticle toward the cleaning electrode by applying a voltage of alternating polarity to the cleaning electrode.

Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.

Abstract: A key structure including a base plate, a keycap disposed above the base plate, a scissor structure disposed between the base plate and the keycap, a first sleeve connected to the keycap, a second sleeve rotatably inserted into the first sleeve and a trigger member is provided. The first sleeve is located between the base plate and the keycap and has a guiding chute. The first sleeve is slidably sleeved on the second sleeve. The second sleeve has a guiding protrusion slidably disposed in the guiding chute and a notch opposite to the guiding protrusion, and the notch faces the base plate. The second sleeve is slidably sleeved on the trigger member. The trigger member has a trigger protrusion contacting the base plate, and the trigger protrusion is located between the base plate and the second sleeve.

Abstract: Hydantoin based compounds useful as inhibitors of matrix metalloproteinases (MMPs), particularly macrophage elastase (MMP-12) are described. Also described are related compositions and methods of using the compounds to inhibit MMP-12 and treat diseases mediated by MMP-12, such as asthma, chronic obstructive pulmonary disease (COPD), emphysema, acute lung injury, idiopathic pulmonary fibrosis (IPF), sarcoidosis, systemic sclerosis, liver fibrosis, nonalcoholic steatohepatitis (NASH), arthritis, cancer, heart disease, inflammatory bowel disease (IBD), acute kidney injury (AKI), chronic kidney disease (CKD), Alport syndrome, and nephritis.

Abstract: An isolation structure can be formed between adjacent and/or non-adjacent pixel regions (e.g., between diagonal or cross-road pixel regions), of an image sensor, to reduce and/or prevent optical crosstalk. The isolation structure may include a deep trench isolation (DTI) structure or another type of trench that is partially filled with a material such that an air gap is formed therein. The DTI structure having the air gap formed therein may reduce optical crosstalk between pixel regions. The reduced optical crosstalk may increase spatial resolution of the image sensor, may increase overall sensitivity of the image sensor, may decrease color mixing between pixel regions of the image sensor, and/or may decrease image noise after color correction of images captured using the image sensor.

Abstract: The present disclosure generally relates to compounds class I HDAC inhibitors, their production and applications. The compounds possess epigenetic immunomodulatory activities in the tumor microenvironment (TME) and thus inhibit growth of tumor cells.

Abstract: A method of manufacturing a semiconductor device includes providing a substrate. A channel layer is formed on the substrate. A barrier layer is formed on the channel layer. A source and a drain are formed on the barrier layer. A recess is formed in the barrier layer, in which the recess has a bottom surface, and a portion of the barrier underneath the recess has a thickness. A first dielectric layer is formed to cover the bottom surface of the recess. A charge trapping layer is formed on the first dielectric layer. A first ferroelectric material layer is formed on the charge trapping layer. A second dielectric layer is formed on the first ferroelectric material layer. A second ferroelectric material layer is formed on the second dielectric layer. A gate is formed over the second ferroelectric material layer.

Abstract: A sensor module comprising a housing defining an internal cavity, the housing including an aperture, at least one microphone positioned in the internal cavity spaced from the aperture, a first barrier proximate the aperture, and a second barrier positioned between the at least one microphone and the first barrier.

Abstract: A system and method for depositing a photoresist and utilizing the photoresist are provided. In an embodiment a deposition chamber is utilized along with a first precursor material comprising carbon-carbon double bonds and a second precursor material comprising repeating units to deposit the photoresist onto a substrate. The first precursor material is turned into a plasma in a remote plasma chamber prior to being introduced into the deposition chamber. The resulting photoresist comprises a carbon backbone with carbon-carbon double bonds.

Abstract: A semiconductor device and method includes: forming a gate stack over a substrate; growing a source/drain region adjacent the gate stack, the source/drain region being n-type doped Si; growing a semiconductor cap layer over the source/drain region, the semiconductor cap layer having Ge impurities, the source/drain region free of the Ge impurities; depositing a metal layer over the semiconductor cap layer; annealing the metal layer and the semiconductor cap layer to form a silicide layer over the source/drain region, the silicide layer having the Ge impurities; and forming a metal contact electrically coupled to the silicide layer.

Abstract: A dopant boost in the source/drain regions of a semiconductor device, such as a transistor can be provided. A semiconductor device can include a doped epitaxy of a first material having a plurality of boosting layers embedded within. The boosting layers can be of a second material different from the first material. Another device can include a source/drain feature of a transistor. The source/drain feature includes a doped source/drain material and one or more embedded distinct boosting layers. A method includes growing a boosting layer in a recess of a substrate, where the boosting layer is substantially free of dopant. The method also includes growing a layer of doped epitaxy in the recess on the boosting layer.

Abstract: An intelligent defecation device for living creature includes a device body, a supporting portion, an image module, and a first analysis module. The supporting portion is formed within the inner side of the device body for accommodating a moisture absorption member so as to allow the living creature to leave over its excrement therein. The image module is also arranged at the device body for dynamically capturing the images of the excrement in the supporting portion and outputting the image. The first analysis module is arranged in the device body and connected with the image module to analyze and calculate the defecation mode with the image based on preset or accumulated data, so as to generate a signal when an abnormal defecation mode is diagnosed.

Abstract: A touch sensitive structure, comprising: a first electrode layer, further comprises multiple first electrodes in parallel to a first axis in a touch area; a second electrode layer, further comprises multiple second electrodes in parallel to a second axis in the touch area; a touch button outside of the touch area, the touch button further comprises a first button electrode in the first electrode layer and a second button electrode in the second electrode layer, wherein a shape and a position of the first button electrode are corresponding to the second button electrode; a first wire, in the first electrode layer and outside the touch area, for connecting the first button electrode; a second wire, in the second electrode layer and outside the touch area; and a conductive layer being arranged in between an external conductive object on top of the touch sensitive structure and at least one of following: the first wire; and the second wire.

Abstract: A system includes a microphone unit coupled to a roof of an autonomous vehicle. The microphone unit includes a microphone board having a first opening. The microphone unit also includes a first microphone positioned over the first opening and coupled to the microphone board. The microphone unit further includes an accelerometer. The system also includes a processor coupled to the microphone unit.

Abstract: A semiconductor device includes a substrate; a fin protruding above the substrate, the fin including a compound semiconductor material that includes a semiconductor material and a first dopant, the first dopant having a different lattice constant than the semiconductor material, where a concentration of the first dopant in the fin changes along a first direction from an upper surface of the fin toward the substrate; a gate structure over the fin; a channel region in the fin and directly under the gate structure; and source/drain regions on opposing sides of the gate structure, the source/drain regions including a second dopant, where a concentration of the second dopant at a first location within the channel region is higher than that at a second location within the channel region, where the concentration of the first dopant at the first location is lower than that at the second location.

Abstract: A testing apparatus for a semiconductor package includes a circuit board, testing patterns and a socket. The circuit board has a testing region and includes a plurality of testing contacts and a plurality of signal contacts distributed in the testing region. The testing patterns are embedded in the circuit board and electrically connected to the testing contacts, where each of the testing patterns includes a first conductive line and a second conductive line including a main portion and a branch portion connected to main portion. The first conductive line is connected to the main portion. The socket is located on the circuit board and comprising connectors electrically connected to the circuit board, wherein the connectors are configured to transmit electric signals for testing the semiconductor package from the testing apparatus.