Abstract: Compositions and methods for modifying the production levels of alkaloids in plants are provided. Alkaloid production can be genetically controlled by modulating the transcriptional activation of PMT genes mediated by members of the ERF family and/or Myc family of transcription factors. Novel nucleotide sequences encoding the Myc family of transcription factors are also provided.

Abstract: A method of manufacturing a semiconductor device includes the following operations. A metal oxide photoresist layer is formed over a target layer. The metal oxide photoresist layer comprises a metal oxide core with organic ligands, a metal oxide framework with organic ligands, or a combination thereof. The metal oxide photoresist layer is exposed to an extreme ultraviolet radiation. The metal oxide photoresist layer is treated with a ligand leaving promoter. The metal oxide photoresist layer is developed to form a patterned photoresist. The target layer is etched by using the patterned photoresist as an etching mask.

Abstract: The invention provides method and apparatus augmenting functionality of an antenna-in-module (AiM) of a user equipment (UE) to proximity detection (and more) besides wireless communication. The AiM may comprise a radiator set and a channel circuit set. The radiator set may comprise one or more radiators, and the channel circuit set may comprise one or more channel circuits. The method may comprise: causing a first subset of the channel circuit set to transmit outgoing electromagnetic (EM) waves by circular polarization of a first rotation sense, causing a second subset of the channel circuit set to receive incoming EM waves by circular polarization of a second rotation sense different from the first rotation sense, accordingly obtaining one or more received detection signals, and executing the proximity detection according to the one or more received detection signals.

Abstract: A location sensing method, a location sensing device, and an input terminal apparatus are provided. The method comprises: in an initial stage, using the light intensity of a reflected light received by a receiver as an environment threshold; in a sensing stage, controlling a transmitter to sequentially emit sensing light, and converting the reflected light received by the receiver into an optical path image; denoising the optical path image; when there is an occlusion object in the optical path image, extracting the outline of the occlusion object and calculating at least one parameter of the occlusion object; removing noise points of the outline; calculating position coordinates of the occlusion object in an input sensing region; optimizing a first coordinate by using a first optimizing manner; and a main board determining an advancing depth in a direction perpendicular to the input sensing region, and identifying a touch position.

Abstract: The present disclosure provides a semiconductor processing apparatus according to one embodiment. The semiconductor processing apparatus includes a chamber; a base station located in the chamber for supporting a semiconductor substrate; a preheating assembly surrounding the base station; a first heating element fixed relative to the base station and configured to direct heat to the semiconductor substrate; and a second heating element moveable relative to the base station and operable to direct heat to a portion of the semiconductor substrate.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first source/drain epitaxial feature disposed in an NMOS region, a second source/drain epitaxial feature disposed in the NMOS region, a first dielectric feature disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a third source/drain epitaxial feature disposed in a PMOS region, a second dielectric feature disposed between the second source/drain epitaxial feature and the third source/drain epitaxial feature, and a conductive feature disposed over the first, second, and third source/drain epitaxial features and the first and second dielectric features.

Abstract: An electronic device includes a temporary storage base, an adhesive layer, light-emitting elements, and a sealant. The adhesive layer is disposed on the temporary storage base. The light-emitting elements are disposed on the adhesive layer. The sealant is disposed on the temporary storage base and surrounds the adhesive layer. In addition, other electronic devices and a manufacturing method of the electronic device are also provided.

Abstract: An apparatus, including: an oscillator configured to generate a clock signal; a clock signal synthesizer configured to generate a first clock signal, a second clock signal, and a third clock signal, wherein the first, second, and third clock signals are based on the clock signal; a baseband transmitter configured to generate a transmit baseband digital signal in response to the first clock signal; an ultra-wideband (UWB) pulse digital-to-analog converter (DAC) configured to generate a UWB pulse signal based on the transmit baseband digital signal in response to the second clock signal; and a frequency upconverter configured to frequency upconvert the UWB pulse signal to generate a transmit radio frequency (RF) signal based on the third clock signal.

Abstract: An extreme ultraviolet (EUV) photolithography system cleans debris from an EUV reticle. The system includes a cleaning electrode configured to be positioned adjacent the EUV reticle. The system includes a voltage source that helps draw debris from the EUV reticle toward the cleaning electrode by applying a voltage of alternating polarity to the cleaning electrode.

Abstract: Differing operations of a wireless communication device benefit from different antenna configurations, such as for positioning, where closely spaced antennas are desirable, and data communication, where antenna diversity is desirable. A device is configured to receive a request for receive a request for determining a position of a user equipment (UE), select one of a first plurality of antennas or a second plurality of antennas for determining the position of the UE, receive wireless signals using the selected first plurality of antennas or the second plurality of antennas, and determine the position of the UE based at least in part on the received wireless signals.

Abstract: The invention relates to an image acquisition system (1) for acquiring an image of a liquid sample (2), comprising a well (3) that stores liquid sample (2), an image acquisition device (4) for acquiring an image of the liquid sample (2) in the well (3), a lid device (5) for covering the well (3) wherein the lid device (5) comprises a lid (6) having a lid part (7) and a lid extension (8) that extends from the lid part (7) into the well (3). The image acquisition system is characterized in that at least one part of the lid extension (8) is in physical contact with the liquid sample (2) when an image is acquired by means of the image acquisition device (4) and a light beam passes through the part of the lid extension (8) that is in physical contact with the liquid sample (2) before it is received by the image acquisition device (4).

Abstract: A laser light source system is used to simultaneously irradiate a plurality of pads on a display substrate and a plurality of light emitting components. The laser light source system includes a laser light source, a collimator lens, a diffractive optical component and a refractive component. The laser light source is configured to provide a laser beam. The collimator lens is disposed on a path of the laser beam to generate a collimated beam. The diffractive optical component is disposed on a path of the collimated beam to generate a plurality of sub beams. The display substrate is disposed on a focal plane of the refractive component, so as to utilize the sub beams to bond the light emitting components to the pads.

Abstract: The present disclosure describes a method to form silicon germanium (SiGe) source/drain epitaxial stacks with a boron doping profile and a germanium concentration that can induce external stress to a fully strained SiGe channel. The method includes forming one or more gate structures over a fin, where the fin includes a fin height, a first sidewall, and a second sidewall opposite to the first sidewall. The method also includes forming a first spacer on the first sidewall of the fin and a second spacer on the second sidewall of the fin; etching the fin to reduce the fin height between the one or more gate structures; and etching the first spacer and the second spacer between the one or more gate structures so that the etched first spacer is shorter than the etched second spacer and the first and second etched spacers are shorter than the etched fin. The method further includes forming an epitaxial stack on the etched fin between the one or more gate structures.

Abstract: A control system is provided. The control system includes a ring device and a controller. The ring device includes an inertial measurement unit (IMU) sensor. The ring device is adapted to be worn on a finger of a user and the IMU sensor is configured to obtain sensor data. The controller is configured to receive the sensor data from the ring device and generate detection data based on the sensor data. The detection data is configured to indicate whether the ring device is rotated and whether the ring device is tapped. The controller is configured to perform a control operation in a virtual world displayed by the controller based on the detection data.

Abstract: A charging method includes detecting a system power, confirming that a hybrid power operation is executed when the system power is not less than a preset power and a hybrid power mechanism is turned on, forcibly disabling a timing operation when the hybrid power operation is executed, confirming that a charging operation is executed when the system power is less than the preset power and the hybrid power mechanism is turned on, starting the timing operation to accumulate a charging time when starting to execute the charging operation, and forcibly stopping the charging operation when the charging time is longer than a preset time.

Abstract: An electronic device with hybrid power source includes a system circuit, a charging and discharging circuit, a power connector, two batteries, and a controller. The charging and discharging circuit is connected to the system circuit, the power connector, and the two batteries. The controller is connected to the processor and the charging and discharging circuit, and the controller has a hybrid power supply mode. The controller detects the operating power of the processor in the system circuit, and controls the power mode from a single power mode to a hybrid power supply mode in response to that the operating power reaches or exceeds the power threshold. In the hybrid power supply mode, under control of the controller, the processor releases a power limit, and the charging and discharging circuit powers the system circuit by using both the battery with greater energy level and an external power.

Abstract: The present disclosure describes an exemplary fin structure formed on a substrate. The disclosed fin structure comprises an n-type doped region formed on a top portion of the substrate, a silicon epitaxial layer on the n-type doped region, and an epitaxial stack on the silicon epitaxial layer, wherein the epitaxial stack comprises a silicon-based seed layer in physical contact with the silicon epitaxial layer. The fin structure can further comprise a liner surrounding the n-type doped region, and a dielectric surrounding the liner.

Abstract: Provided are a display panel and a manufacturing method thereof, and a display device. The display panel includes: a base substrate; a pixel defining layer on one side of the base substrate and having a plurality of first openings for defining a plurality of sub-pixels, the plurality of first openings being in one-to-one correspondence to the plurality of sub-pixels; and an encapsulation layer on one side of the pixel defining layer away from the base substrate. The encapsulation layer includes: a first inorganic layer; a second inorganic layer on one side of the first inorganic layer away from the base substrate; an organic layer between the first inorganic layer and the second inorganic layer; and at least one first optical structure between the first inorganic layer and the organic layer. A refractive index of each first optical structure is greater than that of the organic layer.