Abstract: A cell activation reactor and a cell activation method are provided. The cell activation reactor includes a body, a rotating part, an upper cover, a microporous film, and multiple baffles. The body has an accommodating space, which is suitable for accommodating multiple cells and multiple magnetic beads. The rotating part is disposed in the accommodating space and includes multiple impellers. The microporous film is disposed in the accommodating space and covers multiple holes of the accommodating space. The baffles are disposed in the body. When the rotating part is driven to rotate, the interaction between the baffles and the impellers separates the cells and the magnetic beads.

Abstract: The disclosure provides an environment perception device and method of a mobile vehicle. The environment perception device includes a camera module, a LiDAR module, a database and a processing circuit. The camera module photographs a field near the mobile vehicle to generate a three-dimensional (3D) image frame. The LiDAR module scans the field to generate a 3D scanned frame. The processing circuit fuses the 3D image frame and the 3D scanned frame to generate 3D object information. The processing circuit compares the 3D object information with a 3D map in the database to determine whether an object is a static object. The processing circuit performs an analysis and calculation on the 3D object information to obtain movement characteristics of the object when the object is not the static object, and skips the analysis and calculation on the 3D object information when the object is the static object.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first fin structure and an adjacent second fin structure protruding from the semiconductor substrate and an isolation structure formed in the semiconductor substrate and in direct contact with the first fin structure and the second fin structure. The first fin structure and the second fin structure each include a first portion protruding above a top surface of the isolation structure, a second portion in direct contact with a bottom surface of the first portion, and a third portion extending from a bottom of the second portion. A top width of the third portion is different than a bottom width of the third portion and a bottom width of the second portion.

Abstract: Some embodiments relate to an integrated chip. The integrated chip includes a memory cell over a substrate, where the memory cell comprises a data storage structure. A conductive interconnect is over the data storage structure and comprises a first protrusion adjacent to a first side of the data storage structure, where the first protrusion comprises a flat bottom surface. A spacer structure is disposed on the first side of the data storage structure. The spacer structure directly contacts the flat bottom surface of the first protrusion.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming first and second well regions with different conductivity types in a semiconductor substrate. A well interface is formed between the first and second well regions. The method also includes patterning the semiconductor substrate to form a first fin structure in the first well region, a second fin structure in the second well region, and a first trench between the first and second fin structures. The first trench exposes the well interface in the semiconductor substrate. The method further includes forming insulating spacers on opposite sidewalls of the first trench and etching the semiconductor substrate below the first trench using the insulating spacers as an etch mask, to form a second trench below the first trench. In addition, the method includes filling the first and second trenches with an insulating material.

Abstract: A Wireless Interface Device and System (WIDS) is used as a bridge device for transmitting, translating, transporting and/or transforming a first emergency aid seeking signal to a second emergency aid seeking signal recognizable by a smart voice commendable device (e.g., AMAZON® ECHO®). The first emergency aid seeking signal can be generated from a Personal Emergency Response Systems (PERS), a fall sensor (e.g., a senior fall sensor), home security monitoring device, or any other emergency aid requesting devices.

Abstract: A connection assembly includes a manifold configured to attach a removable cartridge and a connector pipe with a flange. The flange is disposed between an upper plate and a lower plate of the manifold and has a width that prevents tilting of the connector pipe at greater than a maximum tilt angle. The connector pipe is configured to be inserted into a port of the removable cartridge in which an O-ring is compressed between the connector and the port. A filter assembly includes a manifold, a filter removably attached to the manifold, a connector pipe with a flange disposed between an upper plate and a lower plate of the manifold, and an O-ring. The O-ring is compressed between the connector pipe and the port.

Abstract: The problem of forming top electrode vias that provide consistent results in devices that include resistance switching RAM cells of varying heights is solved using a dielectric composite that fills areas between resistance switching RAM cells and varies in height to align with the tops of both the taller and the shorter resistance switching RAM cells. An etch stop layer may be formed over the dielectric composite providing an equal thickness of etch-resistant dielectric over both taller and shorter resistance switching RAM cells. The dielectric composite causes the etch stop layer to extend laterally away from the resistance switching RAM cells to maintain separation between the via openings and the resistance switching RAM cell sides even when the openings are misaligned.

Abstract: A memory cell with an etch stop layer is provided. The memory cell comprises a bottom electrode disposed over a substrate. A switching dielectric is disposed over the bottom electrode and having a variable resistance. A top electrode is disposed over the switching dielectric. A sidewall spacer layer extends along sidewalls of the bottom electrode, the switching dielectric, and the top electrode and an upper surface of a lower dielectric layer. A lower etch stop layer is disposed over the lower dielectric layer and lining an outer sidewall of the sidewall spacer layer. The the sidewall spacer layer separates the lower etch stop layer from the lower dielectric layer.

Abstract: Some embodiments relate to a memory device. The memory device includes a memory cell overlying a substrate, the memory cell includes a data storage structure disposed between a lower electrode and an upper electrode. An upper interconnect wire overlying the upper electrode. A first inter-level dielectric (ILD) layer surrounding the memory cell and the upper interconnect wire. A second ILD layer overlying the first ILD layer and surrounding the upper interconnect wire. A sidewall spacer laterally surrounding the memory cell. The sidewall spacer has a first sidewall abutting the first ILD layer and a second sidewall abutting the second ILD layer.

Abstract: Each memory cell in an array includes a vertical stack that comprises a bottom electrode, a memory element, and a top electrode. An etch stop dielectric layer is formed over the array of memory cells. A first dielectric matrix layer is formed over the etch stop dielectric layer. The top surface of the first dielectric matrix layer is raised in a memory array region relative to a logic region due to topography. The first dielectric matrix layer is planarized by performing a chemical mechanical planarization process using top portions of the etch stop dielectric layer. A second dielectric matrix layer is formed over the first dielectric matrix layer. Metallic cell contact structures are formed through the second dielectric matrix layer on a respective subset of the top electrodes over vertically protruding portions of the etch stop dielectric layer that laterally surround the array of vertical stacks.

Abstract: The problem of forming top electrode vias that provide consistent results in devices that include resistance switching RAM cells of varying heights is solved using a dielectric composite that fills areas between resistance switching RAM cells and varies in height to align with the tops of both the taller and the shorter resistance switching RAM cells. An etch stop layer may be formed over the dielectric composite providing an equal thickness of etch-resistant dielectric over both taller and shorter resistance switching RAM cells. The dielectric composite causes the etch stop layer to extend laterally away from the resistance switching RAM cells to maintain separation between the via openings and the resistance switching RAM cell sides even when the openings are misaligned.

Abstract: Devices for and methods of reducing the environmental sounds (e.g., television and radio systems) when communication is critical (e.g., during an emergency call). By providing remote access to power and audio controls of a television system, it allows a remote responding operator that is calling into a home to quickly take control of an emergency situation and get the user the help that they desperately needed. The devices and methods gain control of the volume or power of a system competing for the hearing level that is required to communicate during an emergency event.

Abstract: A method of and device for reducing energy consumption of a motion sensing device by reducing or avoid using function of device's internal GPS system when a predetermined condition is senses. The predetermined condition includes a predetermined state of motion or no-motion sensed. The motion sensing device includes Personal Emergency Response Systems.

Abstract: Each memory cell in an array includes a vertical stack that comprises a bottom electrode, a memory element, and a top electrode. An etch stop dielectric layer is formed over the array of memory cells. A first dielectric matrix layer is formed over the etch stop dielectric layer. The top surface of the first dielectric matrix layer is raised in a memory array region relative to a logic region due to topography. The first dielectric matrix layer is planarized by performing a chemical mechanical planarization process using top portions of the etch stop dielectric layer. A second dielectric matrix layer is formed over the first dielectric matrix layer. Metallic cell contact structures are formed through the second dielectric matrix layer on a respective subset of the top electrodes over vertically protruding portions of the etch stop dielectric layer that laterally surround the array of vertical stacks.

Abstract: Methods of and devices for automatically reducing and/or eliminating false alarms to the call centers are disclosed. The method of reducing a false alarm notification to a call center can comprise receiving a triggered event notification on a mobile device, requesting a user to unlock the mobile device, and requesting the user to confirm a triggered alarm or dismiss the trigger notification using the mobile device using a non-GUI based user interface.

Abstract: The problem of forming top electrode vias that provide consistent results in devices that include resistance switching RAM cells of varying heights is solved using a dielectric composite that fills areas between resistance switching RAM cells and varies in height to align with the tops of both the taller and the shorter resistance switching RAM cells. An etch stop layer may be formed over the dielectric composite providing an equal thickness of etch-resistant dielectric over both taller and shorter resistance switching RAM cells. The dielectric composite causes the etch stop layer to extend laterally away from the resistance switching RAM cells to maintain separation between the via openings and the resistance switching RAM cell sides even when the openings are misaligned.

Abstract: A storage container includes a container body and a lid that has a first lid portion, a second lid portion, and a hinge portion between the first and second lid portions. Two sides of the hinge portion are formed with a first inclined surface connected to the first lid portion and a second inclined surface connected to the second lid portion, respectively. The first inclined surface is provided with at least one first engaging unit. An outer wall surface of the first engaging unit has a first stopper. The first stopper is parallel to or perpendicular to a horizontal plane of the lid. The second inclined surface is provided with at least one second engaging unit. An inner wall surface of the second engaging unit has a second stopper. The second stopper is perpendicular to or parallel to the horizontal plane, and is perpendicular to the first stopper.

Abstract: An extracellular vesicle separation method, a colloidal particle, and a preparation method thereof are provided. The colloidal particle is used for extracellular vesicle separation, and includes 2 wt % to 6 wt % of agarose. The colloidal particle has a particle size of 25 ?m to 500 ?m, and is surface-modified with biocompatible molecules. The biocompatible molecules include sodium carboxymethyl cellulose (CMC), methyl cellulose (MC), glycine, aspartic acid, glutamic acid, bovine serum albumin (BSA), fetal bovine serum (FBS), or a combination thereof.

Abstract: A method of detecting a biological sample includes the following steps. A magnetic sensor chip is provided, wherein the magnetic sensor chip includes a substrate and a magnetic sensing layer located on the substrate. Probes are connected to the magnetic sensor chip. A sample solution containing biological samples labeled with a first marker is provided on the magnetic sensor chip, so that the biological samples labeled with the first marker are hybridized with the probes. Magnetic beads labeled with a second marker are provided on the magnetic sensor chip, so that the magnetic beads labeled with the second marker are bound onto the biological samples labeled with the first marker. A signal sensed by the magnetic sensing layer is detected by a magnetic sensor.