Abstract: A memristor may include an exchange-coupled composite (ECC) portion to provide three or more nonvolatile magneto-resistive states. The ECC portion may include a continuous layer and a granular layer magnetically exchange coupled to the continuous layer. A plurality of memristors may be used in a system to, for example, define a neural network.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a source/drain feature on a semiconductor fin structure, a first isolation structure surrounding the semiconductor fin structure, source/drain spacers on the first isolation structure and surrounding a lower portion of the source/drain feature, a dielectric fin structure adjoining and in direct contact with the first isolation structure and one of the source/drain spacers, and an interlayer dielectric layer over the source/drain spacers and the dielectric fin structure and surrounding an upper portion of the source/drain feature.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A method of performing air pollution estimation is provided. The method is to be implemented using a processor of a computer device and includes: generating a spectral image based on an original color image of an environment under test using a spectral transformation matrix; supplying the spectral image as an input into an estimating model for air pollution estimation; and obtaining an estimation result from the estimating model indicating a degree of air pollution of the environment under test.

Abstract: Disclosed herein is a flexible sensing interface, comprising: a sensor, comprising: a core; an inner electrode in the form of a conductive material in contact with the core; an inner dielectric material substantially encasing the inner electrode; an outer electrode in the form of a conductive material in contact with the inner dielectric material and in electrical communication with the inner electrode; and an outer dielectric material substantially encasing the outer electrode; wherein the inner dielectric material and the outer dielectric material comprise an elastic material. Also disclosed herein are systems and methods for making and using the same.

Abstract: A semiconductor transistor device includes a channel structure, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, a gate contact, and a back-side source/drain contact. The gate structure wraps around the channel structure. The first source/drain epitaxial structure and the second source/drain epitaxial structure are disposed on opposite endings of the channel structure. The gate contact is disposed on the gate structure. The back-side source/drain contact is disposed under the first source/drain epitaxial structure. The first source/drain epitaxial structure has a concave bottom surface contacting the back-side source/drain contact.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes device fins formed on a substrate; fill fins formed on the substrate and disposed among the device fins; and gate stacks formed on the device fins and the fill fins. The fill fins include a first dielectric material layer and a second dielectric material layer deposited on the first dielectric material layer. The first and second dielectric material layers are different from each other in composition.

Abstract: One or more embodiments of the present specification provide a method and device for capacity degradation prediction of a lithium-ion battery. The method comprises the following steps: acquiring an original battery discharge capacity; decomposing the original battery discharge capacity through a predetermined mode decomposition method to obtain battery discharge capacities composed of a plurality of different frequency signals; inputting the respective frequency signals into a pre-constructed capacity prediction model to obtain capacity prediction results corresponding to the respective frequency signals; selecting capacity prediction result that satisfies a predetermined relevance condition corresponding to the respective frequency signals; and reconstructing the finally predicted battery discharge capacity according to the capacity prediction result that satisfies the predetermined relevance condition.

Abstract: This application provides a method. The method may include: a transmit-side device determines frequency-domain positions of reference signals that are used for phase noise estimation and that are on a plurality of resource blocks, where there are a plurality of reference signals on at least one resource block in the plurality of resource blocks, the reference signals occupy consecutive frequency-domain resources on the at least one resource block, for example, occupy a plurality of consecutive subcarriers; the transmit-side device maps, based on the frequency-domain positions of the reference signals on the plurality of resource blocks, the reference signals to one or more symbols, and sends, to a receive-side device, the one or more symbols to which the reference signals are mapped; and the receive-side device performs phase noise estimation based on the reference signals.

Abstract: One or more embodiments of the present description provide a method and device for risk prediction of thermal runaway in LIB. The method includes: acquiring knowledge of a mechanism for thermal runaway in LIB; describing an evolution process of thermal runaway in LIB by adopting a fault tree; mapping a fault tree structure to a dynamic Bayesian network model for thermal runaway in LIB to obtain quantitative results of a risk of thermal runaway in LIB; and taking the quantitative results of a dynamic Bayesian network as inputs of a machine learning model to obtain prediction results of the risk of thermal runaway. By using the method in the present embodiment, an evolution trend of battery thermal runaway can be predicted by fusing multiple thermal runaway causes and multi-source data, and thus, the prediction results are relatively accurate.

Abstract: The present disclosure discloses a blended ternary positive-electrode material, a preparation method thereof and a lithium ion battery, and relates to the field of lithium battery technologies. A temperature-sensitive precursor type material is taken as a raw material, a large-particle precursor, a small-particle precursor and lithium sources are presintered to obtain a first presintered material and a second presintered material, presintered materials and binders are then mixed, compacted and punctured to obtain a first to-be-sintered material block and a second to-be-sintered material block, the first to-be-sintered material block and the second to-be-sintered material block are loaded into a sagger together for primary sintering, and using a periphery-center regional mode or an upper-lower-layer distribution mode, the first presintered material is distributed at a periphery or an upper layer, and the second presintered material is distributed at a center or a lower layer.

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a substrate, a word line, a first capacitor, a second capacitor, a first bit line and a second bit line. The word line is disposed on the substrate and extends along a first direction. The first capacitor extends along a second direction different from the first direction and is located at a first level. The second capacitor extends along the second direction and is located at a second level different from the first level. The first bit line is electrically connected to the first capacitor and the word line. The second bit line is electrically connected to the second capacitor and the word line.

Abstract: There is provided a computer implemented method, system and device for automatically generating a machine learning model for forecasting a likelihood of compromise in one or more transaction devices and subsequently triggering performing an action on one or more related computing devices based on a potentially compromised transaction device.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate, a word line, a first capacitor, a second capacitor, a first bit line and a second bit line. The word line is disposed on the substrate and extends along a first direction. The first capacitor extends along a second direction different from the first direction and is located at a first level. The second capacitor extends along the second direction and is located at a second level different from the first level. The first bit line is electrically connected to the first capacitor and the word line. The second bit line is electrically connected to the second capacitor and the word line.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Disclosed are a system and a method for capturing a space target. The system includes a plurality of capturing devices, a delivery device, a launching device, and a deceleration and recovery device, each of the plurality of capturing devices is configured to be launched into a target orbit to capture a defunct space target, the delivery device is configured to deliver, along a preset delivery trajectory, each of the plurality of capturing devices to a first preset location in the launching device, the launching device is configured to launch each of the plurality of capturing devices located at the first preset location into the target orbit to capture the defunct space target, and the deceleration and recovery device is configured to decelerate each of the plurality of capturing devices after it is launched and flies a preset distance.

Abstract: A probe head includes upper, middle and lower dies having upper, middle and lower guiding holes respectively, and a plurality of spring probes. The spring probe includes upper and lower abutting sections disposed in the upper and lower guiding holes, a spring section connecting the upper and lower abutting sections, and a barrel disposed on the periphery of the spring section and inserted in the middle guiding hole. The spring probes include adjacent first and second probes whose barrels has first and second outer diameters and are accommodated in first and second middle guiding holes having first and second widths. The difference between the first width and outer diameter and/or the difference between the second width and outer diameter is larger than or equal to 10 micrometers, and/or the difference between the first and second outer diameters is larger than or equal to 5 ?m.

Abstract: A method for determining a road type includes measuring, for a preset period, a magnetic field of an environment in which an electronic device is located to obtain a plurality of magnetic field values, calculating an absolute value of a difference between every two adjacent magnetic field values among the magnetic field values sorted in chronological order, calculating an average of the absolute values related to the magnetic field values to serve as a variation value for the environment, determining whether the variation value is smaller than a predetermined threshold value, determining that the environment is a surface road when the determination result is affirmative, and determining that the environment is a non-surface road when the determination result is negative.

Abstract: A method implemented by a first network node in a communication network is provided. The method comprises: receiving a first subscription for subscribing a first User Equipment UE reachability event of a UE from an event subscriber, wherein the first subscription comprises a first indicator for indicating whether the first UE reachability event is to be reported in a direct mode or an indirect mode; sending a second subscription for subscribing a second UE reachability event to a second network node that is registered in the first network node, the second subscription comprises a second indicator for indicating that the first UE reachability event is to be directly or indirectly reported to the event subscriber according to the first indicator; and sending a first UE reachability report to the event subscriber.

Abstract: Network equipment in a wireless communication network is configured to receive at least a portion of a subscription concealed identifier, SUCI, for a subscriber. The SUCI contains a concealed subscription permanent identifier, SUPI, for the subscriber. The received at least a portion of the SUCI indicates a sub-domain code, SDC. The SDC indicates a certain sub-domain, from among multiple sub-domains of a home network of the subscriber, to which the subscriber is assigned. The network equipment is also configured to determine, based on the SDC and from among multiple instances of a provider network function in the home network respectively allocated to provide a service to be consumed for subscribers assigned to different sub-domains, an instance of the provider network function to provide the service to be consumed for the subscriber.