Abstract: A power supply system is provided. The power supply system includes a power supply, a main load unit, a DC-DC voltage conversion unit, a bypass unit, and at least one sub-load unit. The power supply is configured to provide an adjustable supply voltage. The main load unit is electrically connected to the power supply for receiving the supply voltage. The DC-DC voltage conversion unit is electrically connected to the power supply. The bypass unit is electrically connected to the power supply. The at least one sub-load unit is electrically connected to the DC-DC voltage conversion unit and the bypass unit. When the main load unit stops operating, the power supply adjusts the supply voltage and provides the adjusted supply voltage to the sub-load unit through the bypass unit.

Abstract: A Wi-Fi (Wi-Fi) device and a transmission control method are provided. The Wi-Fi device selectively transmits at least a data division of a transmission data on a low performance link based on several parameters. The parameters include a start time point of a backoff procedure of the low performance link, a duration information associated with another Wi-Fi device on a high performance link, and some predefined exception conditions. By overhearing status of another Wi-Fi device on the high performance link, the Wi-Fi device attempts to acquire the duration information. If the duration information can be acquired, the Wi-Fi device calculates a coherent remnant-duration accordingly. Then, the Wi-Fi device determines whether the transmission data should be transmitted immediately on the low performance link, transmitted later on the high performance link, or partially transmitted on the low performance link.

Abstract: A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.

Abstract: An apparatus includes one or more processors and logic encoded in one or more non-transitory media for execution by the one or more processors and when executed operable to receive sensor data from a drone that travels around a target object. The logic is further operable to generate, based on the sensor data, a first three-dimensional (3D) reconstruction of the target object. The logic is further operable to estimate a direction of sunlight and a direction of spectral reflection. The logic is further operable to plan a trajectory of sensor capturing positions for the drone to capture images of the target object that reduce an amount of sunlight and an amount of specular reflection.

Abstract: The structure of a semiconductor device with inner spacer structures between source/drain (S/D) regions and gate-all-around structures and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, a stack of nanostructured layers with first and second nanostructured regions disposed on the substrate and first and second source/drain (S/D) regions disposed on the substrate. Each of the first and second S/D regions includes an epitaxial region wrapped around each of the first nanostructured regions.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.

Abstract: A filtering device is adapted to be mounted in a fan having a motor cover, a rotary shaft, an impeller combined at the rotary shaft, and a rear protective grill mounting on a mounting base provided on a front end of the motor cover. The filtering device includes an inner ring plate, an outer ring plate, and a filter element. The filter element is sandwiched between the inner ring plate and the outer ring plate, and the inner ring plate and the outer ring plate are coupled between the rear protective grill and the rear protective grill lock ring. The airflow sent out by the rotation of the impeller of the fan will pass through the filter element of the filtering device, achieving the effect of purifying air.

Abstract: A Faraday shield, a semiconductor processing apparatus, and an etching apparatus are provided. The Faraday shield includes a plurality of conductive slices and a spacer interposed between adjacent two of the conductive slices to electrically isolate the adjacent two of conductive slices from one another. The conductive slices are separately arranged aside one another and oriented along a circumference of the Faraday shield. A coil is wound around the circumference of the Faraday shield.

Abstract: The present invention provides a wireless communication method of a multi-link device. The wireless communication method includes the steps of: establishing multiple links with an access point, wherein the multiple links have a current link mode; determining performance of a current link mode and at least one candidate link mode, wherein frequency band(s) corresponding to the current link mode and the at least one candidate link mode are not the same; and if the performance of one of the at least one candidate link mode is greater than the performance of the current link mode, switching the link mode of the multiple links, without reconnecting to the access point, so that the one of the at least one candidate link mode serves as the current link mode to communicate with the access point.

Abstract: A connector is disclosed and includes a main body, a sleeving component, a conductive terminal and a signal terminal. The main body has an opening end and a sleeved end opposite to each other. An electronic device end is matched with the connector through the opening end. The sleeving component is slidably disposed on the sleeved end, and includes a conductive contact portion and a signal contact portion arranged in parallel. The conductive terminal is fixed to the main body for connecting with the conductive contact portion. The signal terminal is fixed to the main body for connecting with the signal contact portion. When the connector is detached from the electronic device end, the sleeving component is displaced relative to the main body, the signal contact portion is separated from the signal terminal, and the conductive terminal end and the conductive contact portion are maintained in an electrical connection.

Abstract: A multimedia processing method includes rendering, through a first native container node of a dynamic page, a content node associated with the first native container node to play multimedia content. The method further includes generating a non-dynamic page in response to a first page switching operation triggered in the dynamic page, and creating a second native container node in a second node tree of the non-dynamic page, the second native container node being supported by the native application framework provided by the operating system. The method further includes disassociating the content node from the first native container node, and establishing an association between the content node and the second native container node. The method further includes rendering, through the second native container node, the content node in the non-dynamic page to continue playing the rendered multimedia content in a portion of the generated non-dynamic page.

Abstract: A connector is disclosed and includes a housing base, a conductive terminal, a signal terminal and a protrusion. A sleeve of an electronic device end sleeves on the housing base through an opening end along a first direction and slides a first displacement distance, plural contact pins of the electronic device end slide into the accommodation space through the opening end, and a conductive contact pin of the electronic device end is interfered with the conductive terminal to form an electrical connection. The protrusion is elastically connected to the housing base and penetrates through the housing base. When the sleeve passes through the opening end and slides a second displacement distance greater than the first displacement distance, the protrusion is interfered with the sleeve and drives the signal terminal, so that the signal terminal pushes against a signal contact pin of the electronic device end to form an electrical connection.

Abstract: A semiconductor device includes: a substrate; a seed layer disposed on the substrate; a compound semiconductor stack layer disposed on the seed layer; and a source metal layer and a drain metal layer disposed on the compound semiconductor stack layer. The semiconductor device further includes a conductive layer at least partially covering the source metal layer and the drain metal layer, and covering opposing side surfaces of the seed layer and opposing side surfaces of the compound semiconductor stack layer. The conductive layer electrically connects the seed layer and the source metal layer.

Abstract: A tissue repair device and a method for using the same are provided. The tissue repair device includes a body portion and at least one wire. The body portion includes an inner layer and an outer layer. The inner layer is close to a tissue, wherein the inner layer includes a hydrophilic structure, and the outer layer includes a hydrophobic structure. The wire is connected to the body portion to fix the body portion to the tissue.

Abstract: A light source module includes a light guide plate, a light-emitting element, and first and second prism sheets. One of the light-emitting surface and the bottom surface of the light guide plate has strip-shaped microstructures. The bottom surface has bottom microstructures, and the angle between the first surface of each bottom microstructure and the bottom surface is 1° to 17°. The first prism sheet is disposed on the light-emitting surface and between the light-emitting surface and the second prism sheet and includes first prism rods. The second prism sheet includes second prism rods. The aspect ratio of the strip-shaped microstructure is greater than 0.2. The angle between the maximum luminance direction of the light from the light-emitting surface and the normal direction of the light-emitting surface is less than 70°. The light-emitting angle range is less than 40°. A display device including the light source module is also provided.

Abstract: A method for forming a FinFET device structure is provided. The method includes forming a fin structure extended above a substrate and forming a gate structure formed over a portion of the fin structure. The method also includes forming a source/drain (S/D) structure over the fin structure, and the S/D structure is adjacent to the gate structure. The method further includes doping an outer portion of the S/D structure to form a doped region, and the doped region includes gallium (Ga). The method includes forming a metal silicide layer over the doped region; and forming an S/D contact structure over the metal silicide layer.

Abstract: A semiconductor device comprises a fin structure disposed over a substrate; a gate structure disposed over part of the fin structure; a source/drain structure, which includes part of the fin structure not covered by the gate structure; an interlayer dielectric layer formed over the fin structure, the gate structure, and the source/drain structure; a contact hole formed in the interlayer dielectric layer; and a contact material disposed in the contact hole. The fin structure extends in a first direction and includes an upper layer, wherein a part of the upper layer is exposed from an isolation insulating layer. The gate structure extends in a second direction perpendicular to the first direction. The contact material includes a silicon phosphide layer and a metal layer.

Abstract: Semiconductor structures are provided. The semiconductor structure includes a fin structure protruding from a substrate and a doped region formed in the fin structure. The semiconductor structure further includes a metal gate structure formed across the fin structure and a gate spacer formed on a sidewall of the metal gate structure. The semiconductor structure further includes a source/drain structure formed over the doped region. In addition, the doped region continuously surrounds the source/drain structure and is in direct contact with the gate spacer.

Abstract: The various embodiments described herein include methods, devices, and systems for reading and writing data from a database table. In one aspect, a method includes: (1) initiating a read transaction to read from a first non-key column of a row in the database table, the database table having a plurality of rows, each row comprising a primary key and a plurality of non-key columns, the initiating including: (a) determining that a write transaction holds a lock on a second non-key column of the row in the database table, and (b) determining that no lock is held on the first non-key column; and (2) in response, concurrently reading data from the first non-key column and writing a new column value to the second non-key column; where each non-key column includes a last-write timestamp that indicates when the last write occurred for the respective non-key column.

Abstract: A method of manufacturing a semiconductor structure forming a redistribution layer (RDL); forming a conductive pad over the RDL; performing a first electrical test through the conductive pad; bonding a first die over the RDL by a connector; disposing a first underfill material to surround the connector; performing a second electrical test through the conductive pad; disposing a second die over the first die and the conductive pad; and disposing a second underfill material to surround the second die, wherein the conductive pad is at least partially in contact with the second underfill material, and is protruded from the RDL during the first electrical test and the second electrical test.