Abstract: A light intensity adjustment circuit includes a delay circuit, a switching circuit and a light-emitting circuit. The delay circuit includes a capacitor and is used to receive a first pulse width modulation signal and generate a delay signal according to the first pulse width modulation signal. The switching circuit includes a switching unit and an isolation circuit. The switching unit includes a control terminal coupled to the delay circuit and used to receive the delay signal, and a first terminal used to generate a current according to the delay signal. The isolation circuit is coupled to the first terminal of the switching unit and generate a second pulse width modulation signal according to the current. The light-emitting circuit is used to receive the second pulse width modulation signal and emit light accordingly.

Abstract: A light intensity adjustment circuit includes a delay circuit, a switching circuit and a light-emitting circuit. The delay circuit includes a capacitor and is used to receive a first pulse width modulation signal and generate a delay signal according to the first pulse width modulation signal. The switching circuit includes a switching unit and an isolation circuit. The switching unit includes a control terminal coupled to the delay circuit and used to receive the delay signal, and a first terminal used to generate a current according to the delay signal. The isolation circuit is coupled to the first terminal of the switching unit and generate a second pulse width modulation signal according to the current. The light-emitting circuit is used to receive the second pulse width modulation signal and emit light accordingly.

Abstract: A driver circuit includes a first voltage conversion unit, a second voltage conversion unit, a third voltage conversion unit, a light driver and a control circuit. The first voltage conversion unit may convert a first voltage to a second voltage. The second voltage conversion unit may convert the second voltage to a third voltage in a non-electrically isolated manner. The third voltage conversion unit may convert the second voltage to a fourth voltage in a non-electrically isolated manner. The light driver may receive the third voltage and a control signal to generate a control current according to the control signal. The control circuit may receive the fourth voltage and an image signal to generate the control signal according to the image signal.

Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

Abstract: A non-pneumatic tire includes a tread layer and a spoke layer including an inner cylinder and several spoke assemblies. The tread layer is annular and has a maximum outer diameter of the non-pneumatic tire and is adapted to be in contact with a ground. The spoke assemblies extend in a radial direction of the non-pneumatic tire and are arranged around an axial core of the non-pneumatic tire. An end of each spoke assembly is connected to the inner cylinder, and another end thereof is connected to the tread layer. Each spoke assembly includes a straight spoke, a bending spoke, and a connecting rib. Each bending spoke includes a first segment and a second segment, which are not connected in a straight line. Each connecting rib has a first end connected to the straight spoke and a second end opposite to the first end and connected to the bending spoke. When the non-pneumatic tire bears a weight and is squeezed, the spoke assemblies do not get in contact with one another.

Abstract: A computer is provided, including a keyboard, a rotating plate, a pivot shaft and a screen. The rotating plate is movably disposed on the keyboard. The pivot shaft is connected to the rotating plate, and is movable relative to the keyboard. The screen is connected to the pivot shaft to move relative to the rotating plate.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.

Abstract: A computer is provided, including a keyboard, a pivot shaft, a supporting plate and a screen. The pivot shaft is movably disposed on the keyboard. The supporting plate is connected to the pivot shaft, and is rotatable relative to the keyboard, and includes a supporting plate pivot. The screen is connected to the supporting plate pivot to rotate relative to the supporting plate.

Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

Abstract: A sewing tape measure with a print-on anti-slip structure includes a transparent substrate and a reference line unit disposed on top surface or a bottom surface of the transparent substrate. The reference line unit includes a plurality of lateral main reference lines and longitudinal main reference lines. Each adjacent longitudinal main reference line is provided with a plurality of secondary reference lines, and a no reference line area is defined between adjacent lateral main reference lines, adjacent longitudinal main reference lines and adjacent secondary reference lines. The plural print-on anti-slip parts are disposed on the bottom surface of the transparent substrate at the interval, each print-on anti-slip part is printed by the printing ink with a anti-slip property, and each print-on anti-slip part is distributed within the range of no reference line area.

Abstract: A chemical mechanical polishing (CMP) system includes a polishing pad configured to polish a substrate. The CMP system further includes a heating system configured to adjust a temperature of the polishing pad. The heating system comprises at least one heating element spaced apart from the polishing pad. The CMP system further includes a sensor configured to measure the temperature of the polishing pad.

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.

Abstract: An electronic package is provided and includes a plurality of electronic elements, a spacing structure connecting each of the plurality of electronic elements, and a plurality of conductive elements electrically connected to the plurality of electronic elements and serving as external contacts. The spacing structure has a recess to enhance the flexibility of the electronic elements after the electronic elements are connected to one another, thereby preventing the problem of warpage. A method for fabricating the electronic package is also provided.

Abstract: A casing of an electronic device including a metallic housing, a first non-conductive spacer and a second non-conductive spacer is provided. The metallic housing has an inner surface and an outer surface opposite to the inner surface, and the outer surface has a back side and lateral sides connecting with the back side. The inner surface is substantially a recessed structure. The metallic housing having a first gap and a second gap substantially located at two opposite ends of the metallic housing and being parallel with each other. The first non-conductive spacer is disposed the first gap, and the second non-conductive spacer is disposed in the second gap.

Abstract: A metallic housing of an electronic device including an inner surface, an outer surface and a first non-conductive spacer is provided. The outer surface is opposite to the inner surface, and the outer surface has a back side and lateral sides connecting with the back side. The inner surface is substantially a recessed structure. The metallic housing having a first gap and a second gap substantially located at two opposite ends of the metallic housing and being parallel with each other. The first gap and the second gap each communicates the inner surface and the outer surface. The first non-conductive spacer is disposed the first gap of the metallic housing.

Abstract: A method for fabricating an electronic package is provided. A filling material is formed in an interval S, at which a plurality of electronic components disposed on a carrying structure are spaced apart from one another. The filling material acts as a spacer having a groove, and the groove acts as a stress buffering region. Therefore, the electronic components can be prevented from being broken due to stress concentration.

Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.