Abstract: A device includes a semiconductor region, an interfacial layer over the semiconductor region, the interfacial layer including a semiconductor oxide, a high-k dielectric layer over the interfacial layer, and an intermixing layer over the high-k dielectric layer. The intermixing layer includes oxygen, a metal in the high-k dielectric layer, and an additional metal. A work-function layer is over the intermixing layer. A filling-metal region is over the work-function layer.

Abstract: Method and apparatus for constrained de-blocking filter are disclosed. According to one method, a current block is partitioned into a plurality of sub-blocks using SDIP (Short Distance Intra Prediction mod). A first Bs (boundary strength) for an internal block boundary of the plurality of sub-blocks is determined by setting the first Bs to a second Bs of an Intra-coded boundary block of the current block. De-blocking process is applied, using the first Bs, to reconstructed samples across the internal block boundary of the plurality of sub-blocks to generate filtered-reconstructed samples. In another method, the current block is partitioned into two sub-blocks using SBT (sub-block transform) horizontally or vertically and the first Bs (boundary strength) is determined for an internal block boundary between the two sub-blocks by setting the first Bs to a second Bs of a non-zero cbf (coded block flag) block of the two sub-blocks in step.

Abstract: A LiDAR and a method of a fast photon-count integration for a LiDAR are disclosed. The proposed method, wherein the LiDAR includes a laser, includes: providing a target and the LiDAR; causing the laser to fire a laser pulse towards the target according to a random mechanism; and causing an interval between two adjacent laser pulses to be less than a time that the laser spent for a round trip of maximum unambiguous range to speed up a detection and a ranging of the target.

Abstract: A semiconductor device includes a gate structure disposed over a channel region and a source/drain region. The gate structure includes a gate dielectric layer over the channel region, one or more work function adjustment material layers over the gate dielectric layer, and a metal gate electrode layer over the one or more work function adjustment material layers. The one or more work function adjustment layers includes an aluminum containing layer, and a diffusion barrier layer is disposed at at least one of a bottom portion and a top portion of the aluminum containing layer. The diffusion barrier layer is one or more of a Ti-rich layer, a Ti-doped layer, a Ta-rich layer, a Ta-doped layer and a Si-doped layer.

Abstract: A video coder that implements illumination compensation is provided. The video coder receives a first block of pixels in a first video picture to be coded as a current block, wherein the current block is associated with a motion vector that references a second block of pixels in a second video picture as a reference block. The video coder performs inter-prediction for the current block by using the motion vector to generate a set of motion-compensated pixels for the current block. The video coder modifies the set of motion-compensated pixels of the current block by applying a linear model that is computed based on neighboring samples of the reference block and of the current block. The neighboring samples are identified based on a position of the current block within a larger block.

Abstract: Method and apparatus for constrained de-blocking filter are disclosed. According to one method, if a CU is partitioned into multiple sub-CUs, the de-blocking process is also applied to the sub-block boundaries inside the current filtered-reconstructed block. According to another method, if first reference samples used for the de-blocking process of a first boundary are to be modified by the de-blocking process of a second boundary, the first reference samples are replaced by padding samples that are not to be modified by the de-blocking process of the second boundary. According to yet another method, the de-blocking process is applied to a reconstructed block corresponding to a current block to result in a current filtered-reconstructed block regardless whether a boundary of the current block corresponds to an 8×8 sample grid boundaries.

Abstract: The present disclosure describes method to form a semiconductor device with a diffusion barrier layer. The method includes forming a gate dielectric layer on a fin structure, forming a work function stack on the gate dielectric layer, reducing a carbon concentration in the work function stack, forming a barrier layer on the work function stack, and forming a metal layer over the barrier layer. The barrier layer blocks a diffusion of impurities into the work function stack, the gate dielectric layer, and the fin structure.

Abstract: An example computing device may include a housing having an outer panel, the outer panel comprising a first array of openings through the outer panel, an inner panel opposite the outer panel, the inner panel comprising a second array of openings and a third array of openings different than the second array of openings and an actuator to move the inner panel relative to the outer panel between (1) a first position in which the second array of openings are at least partially aligned with the first array of openings and the third array of openings are out of alignment with the first array of openings, and (2) a second position in which the third array of openings are at least partially aligned with the first array of openings and the second array of openings are out of alignment with the first array of openings.

Abstract: The present disclosure describes method to form a semiconductor device having a gate dielectric layer with controlled doping and to form multiple devices with different Vt. The method includes forming a gate dielectric layer on a fin structure, forming a buffer layer on the gate dielectric layer, and forming a dopant source layer including a dopant on the buffer layer. The gate dielectric layer includes an interfacial layer on the fin structure and a high-k dielectric layer on the interfacial layer. The method further includes doping a portion of the high-k dielectric layer adjacent to the interfacial layer with the dopant, removing the dopant source layer and the buffer layer, forming a dopant pulling layer on the gate dielectric layer, and tuning the dopant in the gate dielectric layer by the dopant pulling layer.

Abstract: Video processing methods and apparatuses in a video encoding or decoding system for processing out-of-bounds nodes in a current picture. An out-of-bounds node is a coding tree node with a block region across a current picture boundary. The video processing method or apparatus determines an inferred splitting type, applies the inferred splitting type to split the out-of-bounds node into child blocks, adaptively splits each child block into one or multiple leaf blocks, and encodes or decodes the leaf blocks in the out-of-bounds node inside the current picture. The inferred splitting type for partitioning out-of-bounds nodes in an inter slice, picture, or tile is the same as the inferred splitting type for partitioning out-of-bounds nodes in an intra slice, picture, or tile.

Abstract: A method and apparatus for block partition are disclosed. If a cross-colour component prediction mode is allowed, the luma block and the chroma block are partitioned into one or more luma leaf blocks and chroma leaf blocks. If a cross-colour component prediction mode is allowed, whether to enable an LM (Linear Model) mode for a target chroma leaf block is determined based on a first split type applied to an ancestor chroma node of the target chroma leaf block and a second split type applied to a corresponding ancestor luma node. According to another method, after the luma block and the chroma block are partitioned using different partition tress, determine whether one or more exception conditions to allow an LM for a target chroma leaf block are satisfied when the chroma partition tree uses a different split type, a different partition direction, or both from the luma partition tree.

Abstract: A semiconductor device includes a gate structure disposed over a channel region, and a source/drain region. The gate structure includes a gate dielectric layer over the channel region, a first work function adjustment layer, over the gate dielectric layer, a first shield layer over the first work function adjustment layer, a first barrier layer, and a metal gate electrode layer. The first work function adjustment layer is made up of n-type work function adjustment layer and includes aluminum. The first shield layer is made of at least one selected from the group consisting of metal, metal nitride, metal carbide, silicide, a layer containing one or more of F, Ga, In, Zr, Mn and Sn, and an aluminum containing layer having a lower aluminum concentration than the first work function adjustment layer.

Abstract: A method and apparatus for video coding using block partition are disclosed. According to the present invention, a partition structure corresponding to recursively partitioning a current block into smaller TU (transform unit) blocks until the partition structure reaches a maximum allowed split depth or until a block size of at least one of smaller TU blocks is a supported core transform size, where the current block is partitioned into final smaller TU blocks according to the partition structure. A transform coding process is applied to the current block according to the partition structure, where the transform coding process is skipped for at least one of the final smaller TU blocks. A flag can be signalled for the current block to indicate whether the current block is allowed to skip the transform coding process for said at least one of the final smaller TU blocks.

Abstract: A device includes a semiconductor region, an interfacial layer over the semiconductor region, the interfacial layer including a semiconductor oxide, a high-k dielectric layer over the interfacial layer, and an intermixing layer over the high-k dielectric layer. The intermixing layer includes oxygen, a metal in the high-k dielectric layer, and an additional metal. A work-function layer is over the intermixing layer. A filling-metal region is over the work-function layer.

Abstract: In a method of manufacturing a semiconductor device, a gate dielectric layer is formed over a channel region, a first conductive layer is formed over the gate dielectric layer, a shield layer is formed over the first conductive layer forming a bilayer structure, a capping layer is formed over the shield layer, a first annealing operation is performed after the capping layer is formed, the capping layer is removed after the first annealing operation, and a gate electrode layer is formed after the capping layer is removed.

Abstract: Video processing methods comprise receiving input data of a current block, checking whether the current block is a root block by considering one or more predefined criteria, applying a mode constraint, a chroma split constraint, or both the mode and chroma split constraints to the current block if the current block is set to be a root block, and encoding or decoding the current block. The mode constraint restricts all blocks split from the current block to be processed by a same prediction mode and the chroma split constraints prohibits chroma components of the current block to be further partitioned while allowing a luma component of the current block to be partitioned into smaller blocks.

Abstract: The present disclosure describes a semiconductor device having metal boundary trench isolation with electrically conductive intermediate structures acting as a metal diffusion barrier. The semiconductor structure includes a first fin structure and a second fin structure on a substrate, an insulating layer between the first and second fin structures, a gate dielectric layer on the insulating layer and the first and second fin structures, and a first work function stack and a second work function stack on the gate dielectric layer. The first work function stack is over the first fin structure and a first portion of the insulating layer, and the second work function stack is over the second fin structure and a second portion of the insulating layer adjacent to the first portion. The semiconductor structure further includes a conductive intermediate structure on the gate dielectric layer and between the first and second work function stacks.

Abstract: A semiconductor device with different gate structure configurations and a method of fabricating the same are disclosed. The semiconductor device includes a fin structure disposed on a substrate, and first and second gate structures on the fin structure. The first and second gate structures includes first and second interfacial oxide layers, respectively, first and second high-K gate dielectric layers disposed on the first and second IO layers, respectively, and first and second dopant control layers disposed on the first and second HK gate dielectric layers, respectively. The second dopant control layer has a silicon-to-metal atomic concentration ratio greater than an Si-to-metal atomic concentration ratio of the first dopant control layer. The semiconductor further includes first and second work function metal layers disposed on the first and second dopant control layers, respectively, and first and second gate metal fill layers disposed on the first and second work function metal layers, respectively.

Abstract: A semiconductor device includes a gate structure disposed over a channel region and a source/drain region. The gate structure includes a gate dielectric layer over the channel region, one or more work function adjustment material layers over the gate dielectric layer, and a metal gate electrode layer over the one or more work function adjustment material layers. The one or more work function adjustment layers includes an aluminum containing layer, and a diffusion barrier layer is disposed at at least one of a bottom portion and a top portion of the aluminum containing layer. The diffusion barrier layer is one or more of a Ti-rich layer, a Ti-doped layer, a Ta-rich layer, a Ta-doped layer and a Si-doped layer.

Abstract: The present disclosure describes a method for forming gate stack layers with a fluorine concentration up to about 35 at. %. The method includes forming dielectric stack, barrier layer and soaking the dielectric stack and/or barrier layer in a fluorine-based gas. The method further includes depositing one or more work function layers on the high-k dielectric layer, and soaking at least one of the one or more work function layers in the fluorine-based gas. The method also includes optional fluorine drive in annealing process, together with sacrificial blocking layer to avoid fluorine out diffusion and loss into atmosphere.