Abstract: A method includes forming a first dielectric layer, forming a first redistribution line comprising a first via extending into the first dielectric layer, and a first trace over the first dielectric layer, forming a second dielectric layer covering the first redistribution line, and patterning the second dielectric layer to form a via opening. The first redistribution line is revealed through the via opening. The method further includes forming a second via in the second dielectric layer, and a conductive pad over and contacting the second via, and forming a conductive bump over the conductive pad. The conductive pad is larger than the conductive bump, with a first center of conductive pad being offsetting from a second center of the conductive bump. The second via is further offset from the second center of the conductive bump.

Abstract: A semiconductor device package is provided. The semiconductor device package includes a substrate, a first package component, a second package component, and at least one dummy die. The first and second package components are disposed over and bonded to the substrate. The first and second package components are different types of electronic components that provide different functions. The dummy die is disposed over and attached to the substrate. The dummy die is located between the first and second package components and is electrically isolated from the substrate.

Abstract: A chip package structure is provided. The chip package structure includes a wiring substrate. The chip package structure includes a first chip structure and a second chip structure over the wiring substrate. The first chip structure is spaced apart from the second chip structure by a gap. The chip package structure includes a ring structure over the wiring substrate. The ring structure has a first opening, the first chip structure and the second chip structure are in the first opening, the first opening has a first inner wall, the first inner wall has a first recess, and the gap extends toward the first recess.

Abstract: The present disclosure generally relates to user interfaces for navigating, viewing, and editing content items, including aggregated content items.

Abstract: An electronic package is provided, which includes a plurality of electronic components encapsulated by an encapsulation layer. A spacer is defined in the encapsulation layer and located between at least two adjacent electronic components of the plurality of electronic components, and a recess is formed in the spacer and used as a thermal insulation area. With the design of the thermal insulation area, the plurality of electronic components can be effectively thermally insulated from one another to prevent heat generated by one electronic component of high power from being conducted to another electronic component of low power that would thermally affect the operation of the low-power electronic component. A method for manufacturing the electronic package is also provided.

Abstract: Multispecific binding molecules (MBMs) comprising at least three antigen binding sites that bind to FGR1c, the GH1 domain of Klotho beta (“KLB”), and the GH2 domain of KLB, pharmaceutical compositions containing the MBMs, methods of using the MBMs and pharmaceutical compositions for treating metabolic diseases, nucleic acids encoding the MBMs, cells engineered to express the MBMs, and methods of producing MBMs.

Abstract: The present disclosure relates to IL2 agonists with improved therapeutic profiles.

Abstract: An on-cell touch display and a preparing method thereof are provided. The on-cell touch display includes a display panel and a touch sensor disposed on the display panel. The touch sensor includes a first conductive thin film, which is formed on the display panel; an insulating layer, which is formed on the first conductive thin film; a second conductive thin film, which is formed on the insulating layer; and a protective film, which is formed on the second conductive thin film; wherein the non-uniformity value of the first conductive thin film and the second conductive thin film is less than 15% respectively.

Abstract: A semiconductor device package and a method of forming the same are provided. The semiconductor device package includes a substrate, an electronic component, a ring structure, and an adhesive layer. The electronic component is located over a first surface of the substrate. The ring structure is located over the first surface of the substrate and surrounding the electronic component. The ring structure has a bottom surface facing the first surface of the substrate and a top surface opposite the bottom surface. The ring structure includes a plurality of side parts and a plurality of corner parts recessed from the top surface and thinner than the side parts. Any two of the corner parts are separated from one another by one of the side parts. The adhesive layer is interposed between the bottom surface of the ring structure and the first surface of the substrate.

Abstract: A computer system receives, by a first application, a plurality of shared media items and receives a request to display a view of a media application that includes the media library that includes a first plurality of media items. The computer system displays a collection of media items in the media application that are selected based on first criteria. Displaying the collection of media items includes displaying a second plurality of media items selected from the media library based on the first criteria. In accordance with a determination that a first shared media item from a set of one or media items that have not been added to the media library meets display criteria, the display criteria including the first criteria, displaying the first shared media item in the collection of media items concurrently with the second plurality of media items.

Abstract: Various implementations include systems for processing audio signals to remove artifacts introduced by a machine learning system in challenging environments. In particular implementations, a method includes generating a processed audio signal for a hearing assistance device in which the processed audio signal is intended to perceptually dominate a user auditory experience, including: processing an unprocessed audio signal received by the hearing assistance device, wherein the processing includes utilizing a machine learning (ML) system to generate an ML enhanced audio signal; determining a mixing coefficient from an environmental noise assessment; mixing the ML enhanced audio signal with the unprocessed audio signal using the mixing coefficient to generate the processed audio signal; and outputting the processed audio signal.

Abstract: A semiconductor die package and a method of forming the same are provided. The semiconductor die package includes a package substrate, an interposer substrate over the package substrate, semiconductor dies over the interposer substrate, and an underfill element over the interposer substrate and between the semiconductor dies and interposer substrate. The semiconductor die package also includes a ring structure and one or more lid structures separated from the ring structure. The ring structure is coupled to the package substrate to control warpage. The lid structures are coupled to the top surfaces of the semiconductor dies to control warpage and help heat dissipation. In addition, the lid structures define a gap to allow a portion of the underfill element between the adjacent semiconductor dies to be exposed, so that stress concentration on that portion can be avoided or reduced. Accordingly, the reliability of the semiconductor die package is improved.

Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.

Abstract: A photosensitive electrically conductive structure includes: a substrate; a releasing photosensitizing resin layer disposed on the substrate; a nano silver layer disposed on the releasing photosensitizing resin layer; and a photosensitive electrically conductive layer disposed on an edge of the nano silver layer. A visible region is defined in the photosensitive electrically conductive structure where the nano silver layer is not covered by the photosensitive electrically conductive layer and a peripheral wiring region is defined in the photosensitive electrically conductive structure where the nano silver layer is covered by the photosensitive electrically conductive layer. The releasing photosensitizing resin layer has an average molecular weight (Mn) greater than 3,000 but less than 100,000, and the releasing photosensitizing resin layer, the nano silver layer, and the photosensitive electrically conductive layer are patterned.

Abstract: A method for preparing a carbon nanodot-fluorescent polymer composite includes subjecting a reactant and a biological component to a reaction at 260° C. to 290° C., so as to obtain the carbon nanodot-fluorescent polymer composite containing a polymer and carbon nanodots dispersed in the polymer. The biological component includes at least one of collagen, chitin, gelatin, and sodium alginate. The reactant is selected from a reaction component or a polycondensate formed therefrom. The reaction component includes terephthalic acid having carboxylic acid groups and ethylene glycol capable of reacting with such groups. Also disclosed are the carbon nanodot-fluorescent polymer composite and a carbon nanodot-fluorescent composite fiber including the same.

Abstract: A method includes forming a gate structure on a semiconductor substrate; depositing a carbon-containing seal layer over the gate structure; depositing a nitrogen-containing seal layer over the carbon-containing seal layer; introducing an oxygen-containing precursor on the nitrogen-containing seal layer; heating the substrate to dissociate the oxygen-containing precursor into an oxygen radical to dope into the nitrogen-containing seal layer; after heating the substrate, etching the nitrogen-containing seal layer and the carbon-containing seal layer, such that a remainder of the nitrogen-containing seal layer and the carbon-containing seal layer remains on a sidewall of the gate structure as a gate spacer.

Abstract: A method for preparing a bifunctional film, including: (a) drying a first polymer solution to form a film to form an anti-adhesion layer; and (b) drying a second polymer solution over the anti-adhesion layer to form a film to form an attachment layer. The first polymer solution includes a first hydrophobic solution and a first hydrophilic solution, and in the first polymer solution, the weight ratio of the solute of the first hydrophobic solution to the solute of the first hydrophilic solution is 1:0.01-1. Moreover, the second polymer solution consists of a second hydrophilic solution.

Abstract: A chip bonding alignment structure includes a semiconductor chip, a metal layer, an etching stop layer, at least one metal bump, a dielectric barrier layer, a silicon oxide layer, and a silicon carbonitride layer. The metal layer is disposed on a bonding surface of the semiconductor chip and has a metal alignment pattern. The etching stop layer covers the bonding surface and the metal layer. The metal bump extends upward from the metal layer and penetrates through the etching stop layer. The dielectric barrier layer covers the etching stop layer and the metal bump. The silicon oxide layer covers the dielectric barrier layer. The silicon carbonitride layer covers the silicon oxide layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a contact layer over a metal silicide layer. The contact layer extends through a first dielectric structure. The semiconductor device structure includes a first metal nitride barrier layer over sidewalls of the contact layer. The first metal nitride barrier layer is directly adjacent to the first dielectric structure. The semiconductor device structure includes a second metal nitride barrier layer partially between the contact layer and the metal silicide layer and partially between the contact layer and the first metal nitride barrier layer. The metal silicide layer is below the first metal nitride barrier layer and the second metal nitride barrier layer.

Abstract: A method for separating and transporting a glass sheet from a glass ribbon includes drawing the glass ribbon along a draw path in a conveyance direction, scoring the glass ribbon with a scoring device, to produce a score line across at least a portion of a width of the glass ribbon, engaging a first edge of the glass ribbon at a first position downstream of the score line in the conveyance direction with a first robotic handling device, engaging a second edge of the glass ribbon at a second position downstream of the score line in the conveyance direction with a second robotic handling device, and synchronously moving the first robotic handling device and the second robotic handling device to bend the glass ribbon about the score line and separate the glass sheet from the glass ribbon.