Abstract: A composite cleat includes a first component and a second component. The first component is made of a first material and is formed a first connecting portion extended along a longitudinal axis and a ground contact surface disposed at one end thereof. The second component is made of a second material different from the first material and is formed a second connecting portion fixedly connected with the first connecting portion and a threaded stud disposed at one end thereof.

Abstract: An electronic package is provided, which includes a plurality of electronic components encapsulated by an encapsulation layer. A spacer is defined in the encapsulation layer and located between at least two adjacent electronic components of the plurality of electronic components, and a recess is formed in the spacer and used as a thermal insulation area. With the design of the thermal insulation area, the plurality of electronic components can be effectively thermally insulated from one another to prevent heat generated by one electronic component of high power from being conducted to another electronic component of low power that would thermally affect the operation of the low-power electronic component. A method for manufacturing the electronic package is also provided.

Abstract: An embodiment is package structure including a first integrated circuit die, a redistribution structure bonded to the first integrated circuit die, the redistribution structure including a first metallization pattern in a first dielectric layer, the first metallization pattern including a plurality of first conductive features, each of the first conductive features including a first conductive via in the first dielectric layer and first conductive line over the first dielectric layer and electrically coupled to the respective first conductive via, each of the first conductive lines comprising a curve in a plan view, a second dielectric layer over the first dielectric layer and the first metallization pattern, and a second metallization pattern in the second dielectric layer, the second metallization pattern including a plurality of second conductive via in the second dielectric layer, each of the second conductive vias being over and electrically coupled to a respective first conductive line.

Abstract: A semiconductor device includes a source/drain region, a silicide region, a source/drain contact, and a silicon-containing dielectric liner. The source/drain region is in a substrate. The silicide region is embedded in the source/drain region. The source/drain contact is over the silicide region. The silicon-containing dielectric liner surrounds the source/drain contact. The source/drain region is in contact with an outer sidewall of the silicon-containing dielectric liner but separated from a bottom surface of the silicon-containing dielectric liner by the silicide region.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a dielectric structure over the substrate. The semiconductor device structure includes a contact structure passing through the dielectric structure. The contact structure includes a contact layer, a first barrier layer, and a second barrier layer, the contact layer passes through the first barrier layer, the first barrier layer passes through the second barrier layer, the first barrier layer surrounds the contact layer, the second barrier layer surrounds a first upper portion of a sidewall of the first barrier layer and exposes a first lower portion of the sidewall of the first barrier layer, and the sidewall faces away from the contact layer.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a gate electrode, a gate electrode contact layer over the gate electrode, forming a dielectric layer over the gate electrode contact layer, and performing an etch through the dielectric layer, the etch forming an opening that exposes the gate electrode contact layer. The method further includes performing a post-etch treatment on the opening formed by the etch process by exposing the opening to a plasma. The method further includes forming gate electrode contacts in the openings after the post-etch treatment by a bottom-up deposition process.

Abstract: A method for forming a chip package structure is provided. The method includes disposing a first chip structure and a second chip structure over a wiring substrate. The first chip structure is spaced apart from the second chip structure by a gap. The method includes disposing a ring structure over the wiring substrate. The ring structure has a first opening, the first chip structure and the second chip structure are in the first opening, the first opening has a first inner wall, the first inner wall has a first recess, and the gap extends toward the first recess.

Abstract: The present disclosure relates to IL2 agonists with improved therapeutic profiles.

Abstract: A package structure is provided. The package structure includes a redistribution structure and a semiconductor die over the redistribution structure, and bonding elements below the redistribution structure. The semiconductor die has a first sidewall and a second sidewall connected to each other. The bonding elements include a first row of bonding elements and a second row of bonding elements. In a plan view, the second row of bonding elements is arranged between the first row of bonding elements and an extending line of the second sidewall. A minimum distance between the second row of bonding elements and the first sidewall is greater than the minimum distance between the first row of bonding elements and the first sidewall.

Abstract: An electronic device is provided, in which an antenna module for receiving and transmitting radiation signals is disposed on a mounting surface of a circuit board, and an inner layer of the circuit board is formed with a ground surface to arrange a strip-shaped ground circuit along the edges of the ground surface so that the ground circuit occupies at most 50% of the area of the ground surface to improve antenna radiation efficiency.

Abstract: In some embodiments, an electronic device displays a plurality of content items in a messaging conversation. In some embodiments, the electronic device displays user interfaces associated with one or more content items in a messaging conversation.

Abstract: Antigen binding molecules (ABMs) comprising Fab domains in non-native configurations, ABM conjugates comprising the ABMs and cytotoxic or cytostatic agents, pharmaceutical compositions containing the ABMs and ABM conjugates, methods of using the ABMs, ABM conjugates and pharmaceutical compositions for treating cancer, nucleic acids encoding the ABMs, cells engineered to express the ABMs, and methods of producing ABMs.

Abstract: Provided is an electronic package, in which a conductive structure and an encapsulation layer covering the conductive structure are arranged on one side of a carrier structure having a circuit layer, and an electronic component is arranged on the other side of the carrier structure. The rigidity of the carrier structure is increased by the encapsulation layer, and problems such as warpage or wavy deformations caused by increasing the volume of the electronic package due to functional requirements can be eliminated.

Abstract: A semiconductor device package and a method of forming the same are provided. The semiconductor device package includes a substrate, an electronic component, a ring structure, and an adhesive layer. The electronic component is located over a first surface of the substrate. The ring structure is located over the first surface of the substrate and surrounding the electronic component. The ring structure has a bottom surface facing the first surface of the substrate and a top surface opposite the bottom surface. The ring structure includes a plurality of side parts and a plurality of corner parts recessed from the top surface and thinner than the side parts. Any two of the corner parts are separated from one another by one of the side parts. The adhesive layer is interposed between the bottom surface of the ring structure and the first surface of the substrate.

Abstract: A control device is provided, in which the control device is coupled to an external memory and includes a storage circuit, a memory mapping circuit, and a central processing unit (CPU). The storage circuit stores a firmware image. The memory mapping circuit divides the firmware image into a plurality of segments and calculates the start address of each of the segments and the identifier code to generate an access sequence. The CPU reads the storage circuit and outputs the segments to the external memory according to the access sequence.

Abstract: A semiconductor die package and a method of forming the same are provided. The semiconductor die package includes a package substrate, an interposer substrate over the package substrate, semiconductor dies over the interposer substrate, and an underfill element over the interposer substrate and between the semiconductor dies and interposer substrate. The semiconductor die package also includes a ring structure and one or more lid structures separated from the ring structure. The ring structure is coupled to the package substrate to control warpage. The lid structures are coupled to the top surfaces of the semiconductor dies to control warpage and help heat dissipation. In addition, the lid structures define a gap to allow a portion of the underfill element between the adjacent semiconductor dies to be exposed, so that stress concentration on that portion can be avoided or reduced. Accordingly, the reliability of the semiconductor die package is improved.

Abstract: A manufacturing method of a halogen-free flame-retardant thermoplastic braided fiber reinforced polymer composite board, comprising steps of: preparing a recycled material containing a halogen-free flame-retardant thermoplastic braided fiber reinforced polymer composite; adding a polymer base material to the recycled material to form a core layer material and extruding the core layer material with a low shear extruder; hot pressing the core layer material by rollers to obtain a recycled fiber core layer; preparing a reinforcement layer containing a fiber material or a fabric with pores; and stacking and hot pressing the recycled fiber core layer and the reinforcement layer.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a first opening through a dielectric layer, the opening exposing a conductive region. A wet cleaning is used after the forming the first opening, and the first opening is treated after the wet cleaning the first opening, the treating the first opening comprising turning a sidewall treatment precursor and a bottom treatment precursor into a first plasma mixture, the sidewall treatment precursor being different from the bottom treatment precursor. The first opening is filled with a conductive material after the treating the first opening.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a first source/drain region, a second source/drain region, first source/drain contact and a first dielectric spacer liner. The gate structure is over the semiconductor substrate. The first source/drain region and the second source/drain region are in the semiconductor substrate and respectively on opposite sides of the gate structure. The first source/drain contact is over the first source/drain region. The first dielectric spacer liner lines a sidewall of the first source/drain contact and extends into the first source/drain region.

Abstract: In some embodiments, an electronic device displays a plurality of content items in a messaging conversation. In some embodiments, the electronic device displays user interfaces associated with one or more content items in a messaging conversation.