Abstract: A solid state imaging device includes: an imaging device substrate with an imaging device section formed on a first major surface side thereof; a backside interconnect electrode provided on a second major surface side of the imaging device substrate and electrically connected to the imaging device section, the second major surface being on the opposite side of the first major surface; a circuit substrate provided with a circuit substrate electrode opposed to the second major surface; a connecting portion electrically connecting the backside interconnect electrode to the circuit substrate electrode; and a light shielding layer provided coplanar with the backside interconnect electrode or on the circuit substrate side of the backside interconnect electrode.

Abstract: An image forming apparatus comprises an exposure unit forming an electrostatic latent image on a photo conductor based on image information, a developing unit developing the electrostatic latent image by toner made of formation material of a circuitry layer, and an electrostatic transferring unit transferring a toner image on the photo conductor onto a substrate. The toner image is transferred so as to cover at least a part of a conductor layer formed on the substrate. At this time, excessive charges caused in the conductor layer accompanying the start of the transfer of the toner image are removed. Alternatively, charges of which polarity is reverse to that of the toner are added to the conductor layer. These allow the circuitry layer to be formed to have a desired pattern favorably and securely on the conductor layer.

Abstract: A semiconductor apparatus includes, a semiconductor substrate having first and second main surfaces and a thought hole connecting the first and second main surfaces; a first insulation layer arranged on the first main surface, and having an opening corresponding to the thought hole; a first conductive layer arranged on the first insulation layer, and covering the thought hole; a second insulation layer arranged on an inner wall of the thought hole and the second surface; a second conductive layer arranged in the thought hole and on the second insulation layer, the second conductive layer contacting the first conductive layer; and a filling member arranged on the second conductive layer in the through hole, and having a gap between the second conductive layer on the first main surface side.

Abstract: In one aspect of the present invention, a semiconductor device, may include a semiconductor substrate having a first surface and a second surface opposite to the first surface; a through hole in the semiconductor substrate, including an expansion portion which is provided in a vicinity of the first surface so that an opening area of the first opening is greater than an opening area of a lowermost portion of the expansion portion; a first insulating layer on the first surface of the semiconductor substrate; a first wiring layer on the first insulating layer to close the opening of the first insulating layer; a second insulating layer provided on the expansion portion of the through hole; and a second wiring layer on the second insulating layer to extend from inside of the through hole to the second surface of the semiconductor substrate.

Abstract: According to one mode of the present invention, metal-containing resin particles comprising a resin containing a thermosetting resin at 50 wt % or more and having a rate of moisture absorption from 500 to 14500 ppm, and fine metal particles contained in the resin, is provided.

Abstract: A semiconductor device is disclosed, which comprises a semiconductor element in which a laminated film composed of a plurality of layers including an insulating film is formed on a surface of a semiconductor substrate, and a portion of the laminated film is removed from the surface of the semiconductor substrate so that the semiconductor substrate is exposed at the portion, a mounting substrate on which the semiconductor element is mounted, and a resin layer which seals at least a surface side of the semiconductor element with resin.

Abstract: A semiconductor device which is compact and thin in size, low in resistance of a current path and parasitic inductance and excellent in reliability is provided. This semiconductor device comprises a semiconductor substrate, a first main electrode which is formed on a front surface of the semiconductor substrate, a second main electrode which is formed on a rear surface of the semiconductor substrate, and a conducting portion which is formed in a direction to pierce through the semiconductor substrate, wherein the second main electrode is extracted to the front surface of the semiconductor substrate via the conducting portion. And, the conducting portion is a through via which has a through hole formed through the semiconductor substrate in its thickness direction and a conductive portion which is formed in the through hole and connected to the second main electrode.

Abstract: A solid state imaging device includes: an imaging device substrate with an imaging device section formed on a first major surface side thereof; a backside interconnect electrode provided on a second major surface side of the imaging device substrate and electrically connected to the imaging device section, the second major surface being on the opposite side of the first major surface; a circuit substrate provided with a circuit substrate electrode opposed to the second major surface; a connecting portion electrically connecting the backside interconnect electrode to the circuit substrate electrode; and a light shielding layer provided coplanar with the backside interconnect electrode or on the circuit substrate side of the backside interconnect electrode.

Abstract: According to one mode of the present invention, a method of producing an electronic circuit, comprising forming an integrated resin layer having a prescribed thickness by repeating a resin layer forming process a number of times so that resin layers are layered to be integrated with all the resin layers on a substrate, wherein the resin forming process comprises charging the surface of a photoconductor; forming an electrostatic latent image having a prescribed pattern on the surface of the charged photoconductor; forming a visible image by electrostatically attaching charged particles composed of resin on the surface of the photoconductor on which the electrostatic latent image is formed; transferring the visible image formed on the surface of the photoconductor and composed of the charged particles onto the substrate; and fixing said visible image transferred onto said substrate on said substrate to form the resin layer on said substrate, is provided.

Abstract: An image forming apparatus comprises an exposure unit forming an electrostatic latent image on a photo conductor based on image information, a developing unit developing the electrostatic latent image by toner made of formation material of a circuitry layer, and an electrostatic transferring unit transferring a toner image on the photo conductor onto a substrate. The toner image is transferred so as to cover at least a part of a conductor layer formed on the substrate. At this time, excessive charges caused in the conductor layer accompanying the start of the transfer of the toner image are removed. Alternatively, charges of which polarity is reverse to that of the toner are added to the conductor layer. These allow the circuitry layer to be formed to have a desired pattern favorably and securely on the conductor layer.

Abstract: A wiring board comprises a substrate; a resin layer which is selectively formed on one main surface of the substrate and has fine metal particles contained or adhered to its surface; and a conductive metal layer which is formed on the resin layer with the fine metal particles interposed between them.

Abstract: A semiconductor device is disclosed, which comprises a semiconductor element in which a laminated film composed of a plurality of layers including an insulating film is formed on a surface of a semiconductor substrate, and a portion of the laminated film is removed from the surface of the semiconductor substrate so that the semiconductor substrate is exposed at the portion, a mounting substrate on which the semiconductor element is mounted, and a resin layer which seals at least a surface side of the semiconductor element with resin.

Abstract: An optical semiconductor module comprises a guide which has a positioning portion for an optical transmission line, an optical semiconductor mounting surface from which one end face of the optical transmission line disposed in the positioning portion is exposed, and a wiring layer formed on the optical semiconductor mounting surface. An optical semiconductor element is mounted on the optical semiconductor mounting surface of the guide, with a light-emitting surface or a light-receiving surface thereof facing the one end face of the optical transmission line, and is electrically connected to the wiring layer.

Abstract: An image forming apparatus comprises an exposure unit forming an electrostatic latent image on a photoconductor based on image information, a developing unit developing the electrostatic latent image by toner made of formation material of a circuitry layer, and an electrostatic transferring unit transferring a toner image on the photoconductor onto a substrate. The toner image is transferred so as to cover at least a part of a conductor layer formed on the substrate. At this time, excessive charges caused in the conductor layer accompanying the start of the transfer of the toner image are removed. Alternatively, charges of which polarity is reverse to that of the toner are added to the conductor layer. These allow the circuitry layer to be formed to have a desired pattern favorably and securely on the conductor layer.

Abstract: According to one aspect of the invention, a contact sheet for testing electronic parts, comprising an insulating porous layer; and a connection electrode which is disposed on the insulating porous layer and electrically connect the electrode or terminal of the electronic parts and the terminal of a test apparatus; wherein the connection electrode is embedded below at least one main surface of the insulating porous layer.

Abstract: A semiconductor device is disclosed, which comprises a semiconductor element in which a laminated film composed of a plurality of layers including an insulating film is formed on a surface of a semiconductor substrate, and a portion of the laminated film is removed from the surface of the semiconductor substrate so that the semiconductor substrate is exposed at the portion, a mounting substrate on which the semiconductor element is mounted, and a resin layer which seals at least a surface side of the semiconductor element with resin.

Abstract: After a wiring plate 30 having a plurality of leads 31 been insert-molded to an edge face 21 of a molded article 20, unwanted portions of the wiring plate 30 are cut, thereby enabling easy three-dimensional wiring. As a result, an electrode terminal section 43 of a photoelectric conversion element 41 disposed opposite an end face 11b of an optical fiber 11 can be electrically coupled to an electrical wiring section 23 of an optical coupling part 10.

Abstract: When a resin 59 to form a molded body 20 is poured and a lead frame 30 is attached to a front end face 21 of the molded body 20 by insert molding, protective leads 32 provided on both outsides of a lead pattern 31 of the lead frame 30 moderate the flow of the resin 59 and the force acting on the lead pattern 31 is decreased, so that misregistration of the lead pattern 31 can be prevented. Accordingly, the inserted and molded lead frame 30 can be wired on the front end face 21 of the molded body 20 for easily accomplishing three-dimensional electric wiring.

Abstract: There is disclosed a semiconductor device comprising at least one semiconductor element, one chip mounting base being provided at least one first interconnection on one major surface thereof and at least one second interconnection on the other major surface thereof, and the semiconductor element being electrically connected to at least the one first interconnection and mounted on the one major surface, a sealing member being provided on the one major surface of the chip mounting base and covering the semiconductor element and the first interconnection, at least one third interconnection being provided on a surface of the sealing member, and at least one fourth interconnection being provided in the sealing member and the chip mounting base, and electrically connected to the first interconnection, the second interconnection, and the third interconnection.

Abstract: There is disclosed a semiconductor device comprising at least one semiconductor element, one chip mounting base being provided at least one first interconnection on one major surface thereof and at least one second interconnection on the other major surface thereof, and the semiconductor element being electrically connected to at least the one first interconnection and mounted on the one major surface, a sealing member being provided on the one major surface of the chip mounting base and covering the semiconductor element and the first interconnection, at least one third interconnection being provided on a surface of the sealing member, and at least one fourth interconnection being provided in the sealing member and the chip mounting base, and electrically connected to the first interconnection, the second interconnection, and the third interconnection.