Patents by Inventor Chieh Hsieh

Chieh Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10955762
    Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, an exhaust module, a measuring device, a gas supply module and a controller. The exhaust module is configured to extract debris caused by unstable target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The gas supply module is configured to provide a gas into the chamber according to a second gas flow rate. The controller is configured to adjust the first gas flow rate and the second gas flow according to the measured concentration of the debris.
    Type: Grant
    Filed: July 13, 2020
    Date of Patent: March 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi Yang, Ssu-Yu Chen, Shang-Chieh Chien, Chieh Hsieh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Publication number: 20210082888
    Abstract: A package includes a first package and a second package over and bonded to the first package. The first package includes a first device die, and a first encapsulant encapsulating the first device die therein. The second package includes an Independent Passive Device (IPD) die, and a second encapsulant encapsulating the IPD die therein. The package further includes a power module over and bonded to the second package.
    Type: Application
    Filed: September 17, 2019
    Publication date: March 18, 2021
    Inventors: Yu-Chia Lai, Cheng-Chieh Hsieh, Tin-Hao Kuo, Hao-Yi Tsai, Chung-Shi Liu, Chen-Hua Yu
  • Patent number: 10946413
    Abstract: The present invention provides a slow-start photocuring device, comprising: a housing, an ultraviolet (UV) light-emitting diode (LED) module, and a switch control module. The housing has an inner side provided with an internal cavity, wherein the inner side of the housing is further provided with one or a plurality of openings on one or two sides of the internal cavity. The UV LED module is provided around the internal cavity, wherein the UV LED module has a light-emitting side facing the internal cavity. The switch control module is connected to the UV LED module, wherein the switch control module includes a signal modulator, the signal modulator activates a buffer mode when receiving a trigger signal, and the UV LED module in the buffer mode outputs light of a plurality of brightness levels sequentially according to an output signal of the signal modulator.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: March 16, 2021
    Assignee: COSMEX CO. LTD.
    Inventors: Wan Chieh Hsieh, Hao-Hong Ciou, Lin-Yu Sia, Chun Ching Liu
  • Publication number: 20210068241
    Abstract: A method for extreme ultraviolet (EUV) lithography includes loading an EUV mask to a lithography system; loading a wafer to the lithography system, wherein the wafer includes a resist layer sensitive to EUV radiation; producing EUV radiation by heating target plumes using a radiation source; and exposing the resist layer to the EUV radiation while monitoring a speed of the target plumes.
    Type: Application
    Filed: November 13, 2020
    Publication date: March 4, 2021
    Inventors: Chun-Chia Hsu, Chieh Hsieh, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng, Tzung-Chi Fu, Bo-Tsun Liu
  • Publication number: 20210055664
    Abstract: A light source for EUV is provided. The light source includes a target droplet generator, a laser generator, and a controller. The target droplet generator is configured to provide target droplets to a source vessel. The laser generator is configured to provide first laser pulses according to a control signal to irradiate the target droplets in the source vessel. The controller is configured to provide the control signal according to at least two of process parameters including temperature of the source vessel, droplet positions of the target droplets, and beam sizes and focal points of the first laser pulses. When the average value or the standard deviation of the temperature of the source vessel and the droplet positions of the target droplets exceed the predetermined range, the controller is configured to provide the control signal to the laser generator to stop providing the first laser pulses.
    Type: Application
    Filed: October 22, 2020
    Publication date: February 25, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi YANG, Ssu-Yu CHEN, Shang-Chieh CHIEN, Chieh HSIEH, Tzung-Chi FU, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • Publication number: 20210057387
    Abstract: A first package is bonded to a first substrate with first external connections and second external connections. The second external connections are formed using materials that are different than the first external connections in order to provide a thermal pathway from the first package. In a particular embodiment the first external connections are solder balls and the second external connections are copper blocks.
    Type: Application
    Filed: October 19, 2020
    Publication date: February 25, 2021
    Inventors: Chen-Hua Yu, Shin-Puu Jeng, Der-Chyang Yeh, Hsien-Wei Chen, Cheng-Chieh Hsieh, Ming-Yen Chiu
  • Patent number: 10930605
    Abstract: A device and method of manufacture is provided that utilize a dummy pad feature adjacent contact pads. The contact pads may be contact pads in an integrated fan-out package in which a molding compound is placed along sidewalls of a die and the contact pads extend over the die and the molding compound. The contact pads are electrically coupled to the die using one or more redistribution layers. The dummy pad features are electrically isolated from the contact pads. In some embodiments, the dummy pad features partially encircle the contact pads and are located in a corner region of the molding compound, a corner region of the die, and/or an interface region between an edge of the die and the molding compound.
    Type: Grant
    Filed: October 15, 2019
    Date of Patent: February 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chang-Chia Huang, Tsung-Shu Lin, Cheng-Chieh Hsieh, Wei-Cheng Wu
  • Publication number: 20210041787
    Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.
    Type: Application
    Filed: October 12, 2020
    Publication date: February 11, 2021
    Inventors: Chieh HSIEH, Kuan-Hung CHEN, Chun-Chia HSU, Shang-Chieh CHIEN, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • Patent number: 10915688
    Abstract: Disclosed is an IC layout design method capable of improving a result of an integrated circuit (IC) layout design process including a front-end process and a back-end process. The IC layout design method includes the following steps: executing the front-end process according to an initial clock latency setting and thereby generating an initial netlist; executing at least a part of the back-end process according to the initial netlist and thereby obtaining an updated clock latency setting; executing at least a part of the front-end process according to the updated clock latency setting and thereby generating an updated netlist; and executing the back-end process according to the updated netlist and thereby obtaining the result of the IC layout design process.
    Type: Grant
    Filed: February 26, 2020
    Date of Patent: February 9, 2021
    Assignee: REALTEK SEMICONDUCTOR CORPORATION
    Inventors: Shu-Yu Chang, Shih-Jung Hsu, Han-Chieh Hsieh, Yu-Cheng Lo, Cheng-Yu Tsai
  • Publication number: 20210032736
    Abstract: A method of chemical deposition of Iridium oxide film on rigid substrate is provided. The method comprises providing a rigid substrate in a container, adding an iridium precursor and mixing the iridium precursor with water to form an iridium precursor liquid in the container, adding and mixing an oxidant with the iridium precursor liquid in the container; and depositing an iridium oxide film on the rigid substrate in the container. A chelating agent and pH adjustor can be either selectively used for stabilizing the chemical bath deposition and for adjusting pH value of the liquid. For a variety of rigid substrates to be applied, the pH adjustor can adjust the pH value within a range of 4˜13. By employing the proposed fabrication method, it is extraordinarily advantageous of chemical alkaline as well as chemical acid deposition formula with configuration of depositing sodium-doped IrOx iridium oxide film.
    Type: Application
    Filed: July 30, 2019
    Publication date: February 4, 2021
    Inventors: PU-WEI WU, CHUNG-YU WU, KUANG-CHIH TSO, YI-CHIEH HSIEH, HAN-YI WANG
  • Patent number: 10910321
    Abstract: A semiconductor device includes an interposer disposed on a substrate. A first major surface of the interposer faces the substrate. A system on a chip is disposed on a second major surface of the interposer. The second major surface of the interposer opposes the first major surface of the interposer. A plurality of first passive devices is disposed in the first major surface of the interposer. A plurality of second passive devices is disposed on the second major surface of the interposer. The second passive devices are different devices than the first passive devices.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: February 2, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Chieh Hsieh, Hau Tao, Yung-Tien Kuo
  • Publication number: 20200408664
    Abstract: A crystal for flow cytometry with dual laser beams is disclosed. The crystal is a birefringent crystal comprising a material composition including a quartz mineral having a face side including a face angle of ninety degrees plus or minus one tenth of a degree; a wedge side that is substantially perpendicular to the face side, wherein the wedge side includes a wedge angle of two degrees plus or minus one tenth of a degree; and a major side that is substantially perpendicular to the face side and the wedge side. The major side includes a thickness of one and one-half millimeter plus or minus one tenth of a millimeter. A polarized light beam entering the birefringent crystal at an incident angle is separated into an ordinary light beam and an extraordinary light beam.
    Type: Application
    Filed: September 16, 2020
    Publication date: December 31, 2020
    Inventors: Ming Yan, Eric Chase, Yung-Chieh Hsieh
  • Patent number: 10879342
    Abstract: A multi-terminal inductor and method for forming the multi-terminal inductor are provided. In some embodiments, an interconnect structure is arranged over a semiconductor substrate. A passivation layer is arranged over the interconnect structure. A first magnetic layer is arranged over the passivation layer, and a conductive wire laterally extends from a first input/output (I/O) bond structure at a first location to a second I/O bond structure at a second location. A third I/O bond structure branches off of the conductive wire at a third location between the first location and the second location. A connection between the third I/O bond structure and the first I/O bond structure has a first inductance. Alternatively, a connection between the first I/O bond structure and the second I/O bond structure has a second inductance different than the first inductance.
    Type: Grant
    Filed: May 21, 2020
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Chung Hsu, Chung-Long Chang, Tsung-Yu Yang, Hung-Chi Li, Cheng-Chieh Hsieh, Che-Yung Lin, Grace Chang
  • Patent number: 10872805
    Abstract: A semiconductor device includes a substrate, a shallow trench isolation (STI) structure, a first source/drain, a second source/drain, and an isolation dielectric. The substrate has a semiconductor fin. The STI structure surrounds the semiconductor fin. The first source/drain is embedded in the semiconductor fin. The second source/drain is embedded in the semiconductor fin. The isolation dielectric is between the first and second source/drains and extending into the semiconductor fin. An upper surface of the STI structure is free from coverage of the isolation dielectric.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuei-Ming Chang, Chi-Wei Wu, Yi-Chieh Hsieh
  • Publication number: 20200384305
    Abstract: A resistance system for a rowing machine has a mounting bracket, a housing assembly, a paddle wheel, a driving assembly and a restoring assembly. The housing assembly is mounted on the mounting bracket and includes a liquid tank for storing liquid. The driving assembly is connected to the paddle wheel and drives the paddle wheel to rotate in a direction only. The restoring assembly is connected to a strip hub of the driving assembly and is able to drive the strip hub to rotate in a reverse direction. The resistance system for the rowing machine has simplified structure. Therefore, it is easy to assemble to the resistance system, and manufacturing cost of the resistance system can be decreased. In addition, a service life of the resistance system as well as the rowing machine can be increased.
    Type: Application
    Filed: August 25, 2020
    Publication date: December 10, 2020
    Inventor: HSIAO-CHIEH HSIEH
  • Patent number: 10859918
    Abstract: A method for operating a semiconductor apparatus includes generating a plurality of target droplets, deforming the target droplets into a plurality of target plumes respectively, changing an orientation of at least one of the target plumes, and generating a plurality of EUV radiations from the target plumes respectively. At least one of the EUV radiations irradiates an area on the light collector different from other EUV radiations in response to the orientation of the at least one of the target plumes.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: December 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuan-Hung Chen, Chieh Hsieh, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 10845388
    Abstract: A probe carrier of a probe card device includes an upper die unit, a lower die unit, a spacer sandwiched between the upper and lower die units, and an impedance adjusting member. The upper die unit includes a first die, a second die spaced apart from the first die, and a flexible board disposed on the second die and arranged away from the first die. The flexible board includes a plurality of penetrating holes and a circuit layer. The impedance adjusting member is disposed on the flexible board and is electrically coupled to the circuit layer. The circuit layer includes at least one plated wall arranged in at least one of the penetrating holes, a part of the flexible board having the at least one plated wall is separable from the second die by receiving an internal force.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: November 24, 2020
    Assignee: CHUNGHWA PRECISION TEST TECH. CO., LTD.
    Inventors: Wen-Tsung Lee, Kai-Chieh Hsieh, Chao-Hui Tseng, Hsien-Yu Wang
  • Patent number: 10845387
    Abstract: A probe card device includes an upper die unit, a lower die unit, a spacer sandwiched between the upper and lower die units, an impedance adjusting member, and conductive probes. The upper die unit includes a first die and a second die spaced apart from the first die. The first die has a penetrating hole, and the second die has a circuit layer. The impedance adjusting member is disposed on the second die and is electrically coupled to the circuit layer. Each of the conductive probes passes through the upper die unit, the spacer, and the lower die unit. At least one of the conductive probes includes an upper contacting segment protruding from the upper die unit and an extending arm connected to the upper contacting segment. The extending arm is abutted against the circuit layer by passing through the penetrating hole.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: November 24, 2020
    Assignee: CHUNGHWA PRECISION TEST TECH. CO., LTD.
    Inventors: Wen-Tsung Lee, Kai-Chieh Hsieh, Chao-Hui Tseng, Hsien-Yu Wang
  • Patent number: 10845385
    Abstract: A probe card device is provided, and includes a plurality of conductive probes and a flat signal transfer structure that includes a transfer plate and a retaining cover. The transfer plate has a first surface and a second surface that is opposite to the first surface. The transfer plate includes a receiving slot recessed from the first surface and a plurality of signal circuits each having a signal contact arranged at a bottom of the receiving slot. A portion of the transfer plate arranged around and adjacent to the receiving slot is defined as a supporting portion. The retaining cover has a plurality of thru-holes and is disposed on the supporting portion. The retaining cover and the receiving slot of the transfer plate jointly and surroundingly define a receiving space, and the signal contacts of the transfer plate are arranged in the receiving space.
    Type: Grant
    Filed: April 11, 2019
    Date of Patent: November 24, 2020
    Assignee: CHUNGHWA PRECISION TEST TECH. CO., LTD.
    Inventors: Wen-Tsung Lee, Kai-Chieh Hsieh, Wei-Jhih Su
  • Patent number: 10842009
    Abstract: A method for extreme ultraviolet (EUV) lithography includes generating a target droplet, producing a target plume by heating the target droplet with a first laser pulse, directing first and second laser beams onto the target plume, and receiving the first and the second laser beams reflected by the target plume.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: November 17, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chia Hsu, Chieh Hsieh, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng, Tzung-Chi Fu, Bo-Tsun Liu