Abstract: A method includes bonding a first device die to a second device die, encapsulating the first device die in a first encapsulant, performing a backside grinding process on the second device die to reveal through-vias in the second device die, and forming first electrical connectors on the second device die to form a package. The package includes the first device die and the second device die. The method further includes encapsulating the first package in a second encapsulant, and forming an interconnect structure overlapping the first package and the second encapsulant. The interconnect structure comprises second electrical connectors.

Abstract: A container assembly and a container lid are provided. The container assembly includes a container body, a lid, a sleeved portion, an annular pressing portion, and a straw. The container body has an opening portion at an upper end thereof. The lid is detachably disposed on the opening portion and has a top portion at a top end thereof. The annular pressing portion is formed at a side surface of the sleeved portion. The sleeved portion has a second accommodating space recessed therein. When the lid is disposed on the opening portion, the annular pressing portion is in contact with an upper end edge of the opening portion, and a height of a bottom surface of the top portion is greater than a height of the upper end edge of the opening portion. The straw is accommodated in an accommodating space of the container body.

Abstract: A semiconductor device includes a stacked structure, first conductive terminals and second conductive terminals. The stacked structure includes a first semiconductor component having a first area and a second semiconductor component stacked on the first semiconductor component and having a second area smaller than the first area, wherein an extending direction of the first area and an extending direction of the second area are perpendicular to a stacking direction of the first semiconductor component and the second semiconductor component. The first conductive terminals are located on the stacked structure, electrically coupled to the first semiconductor component and aside of the second semiconductor component. The second conductive terminals are located on the stacked structure and electrically coupled to the second semiconductor component.

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

Abstract: A method includes irradiating debris deposited in an extreme ultraviolet (EUV) lithography system with laser, controlling one or more of a wavelength of the laser or power of the laser to selectively vaporize the debris and limit damage to the EUV) lithography system, and removing the vaporized debris.

Abstract: Semiconductor structures are provided. A semiconductor structure includes a cell array. The cell array includes a first regular cell, a second regular cell and a first mixed cell. Each P-type transistor has a first threshold voltage and each N-type transistor has a second threshold voltage in the first regular cell. Each P-type transistor has a third threshold voltage and each N-type transistor has a fourth threshold voltage in the second regular cell. Each P-type transistor has the first threshold voltage and each N-type transistor has the fourth threshold voltage in the first mixed cell. The first regular cell, the second regular cell and the first mixed cell are arranged in the same row of the cell array. The first mixed cell is arranged between the first and second regular cells and is in contact with the first regular cell.

Abstract: A method for generating light is provided. The method further includes measuring a period of time during which one of targets from a fuel target generator passes through two detection positions. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the operation of exciting the targets with the laser generator includes: irradiating a pre-pulse laser on the targets to expand the targets; detecting conditions of expanded targets; and adjusting at least one parameter of the laser generator according to the measured period of time and the conditions when the measured period of time is different from a predetermined value. The parameter of the laser generator which is adjusted according to the measured period of time includes a frequency for generating a laser for illuminating the targets.

Abstract: A probe card device and a spring-like probe are provided. The spring-like probe defines a longitudinal direction and a separation plane that is parallel to the longitudinal direction, and includes a fixing end portion, a testing end portion, and two stroke arms that are arranged between the fixing end portion and the testing end portion. The two stroke arms are spaced apart from each other and are respectively located at two opposite sides of the separation plane. Each of the two stroke arms is in a curved shape. Two projection regions defined by orthogonally projecting the two stroke arms onto the separation plane have at least one intersection point. In a cross section of the two stroke arms perpendicular to the longitudinal direction, an area of any one of the two stroke arms is 95% to 105% of an area of another one of the two stroke arms.

Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.

Abstract: A probe card device and a spring-like probe are provided. The spring-like probe defines a longitudinal direction and a separation plane that is parallel to the longitudinal direction, and includes a fixing end portion, a testing end portion, and two stroke arms that are arranged between the fixing end portion and the testing end portion. The two stroke arms are spaced apart from each other and are respectively located at two opposite sides of the separation plane. Each of the two stroke arms is in a curved shape. Two projection regions defined by orthogonally projecting the two stroke arms onto the separation plane have at least one intersection point. In a cross section of the two stroke arms perpendicular to the longitudinal direction, an area of any one of the two stroke arms is 95% to 105% of an area of another one of the two stroke arms.

Abstract: A metal cutting board is integrally formed by a metal plate body and includes a first plate body, a second plate body, and an inclined connecting portion. The second plate body is disposed around a periphery of the first plate body, the second plate body and the first plate body are parallel to each other, and the second plate body and the first plate body are positioned on planes of different heights. The inclined connecting portion is circumferentially disposed between the first plate body and the second plate body. The first plate body, the second plate body, and the inclined connecting portion are integrally formed from the metal plate body and are connected to form a shallow tray structure.

Abstract: A photonic integrated circuit includes a substrate, an interconnection layer, and a plurality of silicon waveguides. The interconnection layer is over the substrate. The interconnection layer includes a seal ring structure and an interconnection structure surrounded by the seal ring structure. The seal ring structure has at least one recess from a top view. The recess concaves towards the interconnection structure. The silicon waveguides are embedded in the substrate.

Abstract: An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.

Abstract: A package structure and method of forming the same are provided. The package structure includes a semiconductor unit, a package component and an underfill layer. The semiconductor structure unit includes a first semiconductor structure and a second semiconductor structure disposed as side by side, and an isolation region laterally between the first semiconductor structure and the second semiconductor structure. The isolation region vertically extends from a top surface to a bottom surface of the semiconductor structure unit. The semiconductor structure unit is disposed on and electrically connected to the package component. The underfill layer is disposed to fill a space between the semiconductor structure unit and the package component.

Abstract: An apparatus includes an extreme ultraviolet light source vessel having an intermediate focus, a scanner having a light source aperture, and a deflection module arranged between the intermediate focus and the light source aperture. The deflection module includes a first electrode plate and a second electrode plate, configured to create an electric field therebetween. Tin particles moving from the intermediate focus to the light source aperture passes through the deflection module, and are deflected by the electric field therein.

Abstract: A light source for EUV radiation is provided. The light source includes a target droplet generator, a laser generator, and a controller. The target droplet generator is configured to provide target droplets to a source vessel. The laser generator is configured to provide a plurality of first laser pulses according to a control signal to irradiate the target droplets in the source vessel to generate plasma as the EUV radiation. The controller is configured to provide the control signal according to the temperature of the source vessel and droplet positions of the target droplets. When the temperature of the source vessel exceeds a temperature threshold value and a standard deviation of the droplet positions of the target droplets exceeds a first standard deviation threshold value, the controller is configured to provide the control signal to the laser generator, so as to stop providing the first laser pulses.

Abstract: A package substrate and a chip package structure using the same are provided. The package substrate includes a laminated board including first to third wiring layers, a pad array, a plurality of ground conductive structures, and a plurality of power conductive structures. At least one of the ground (or power) conductive structures includes two first ground (or power) conductive posts and a second ground (or power) conductive post. The two first ground (or power) conductive posts and the second ground (or power) conductive post are arranged along a first direction, and the second ground (or power) conductive post is located between two orthographic projections of the two first ground (or power) conductive posts. Each of the ground conductive structures in a first column and each of the power conductive structures in a second column are offset from each other in a second direction.

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.

Abstract: A semiconductor device includes a stacked structure, first conductive terminals and second conductive terminals. The stacked structure includes a first semiconductor component having a first area and a second semiconductor component stacked on the first semiconductor component and having a second area smaller than the first area, wherein an extending direction of the first area and an extending direction of the second area are perpendicular to a stacking direction of the first semiconductor component and the second semiconductor component. The first conductive terminals are located on the stacked structure, electrically coupled to the first semiconductor component and aside of the second semiconductor component. The second conductive terminals are located on the stacked structure and electrically coupled to the second semiconductor component.

Abstract: An electronic apparatus includes at least one heat generating component and an immersion cooling system. The immersion cooling system includes a main tank and a liquid amount adjusting module. The main tank is adapted to contain a heat dissipation medium, and the heat generating component is disposed in the main tank to be immersed in the heat dissipation medium. The liquid adjusting module includes an auxiliary tank and a pump. The auxiliary tank is adjacent to the main tank, and the heat dissipation medium in the main tank is adapted to be overflowed into the auxiliary tank. The pump is disposed in the auxiliary tank and adapted to drive the heat dissipation medium in the auxiliary tank to flow into the main tank.