Abstract: An aligning method for use in semiconductor inspection apparatus is provided. The semiconductor inspection apparatus includes a stage and a touch-control screen. The aligning method includes defining a reference direction; displaying an image of a device under test supported by the stage on the touch-control screen; detecting a first touch point and a second touch point occurred on the touch-control screen; defining a straight line according to the first touch point and the second touch point; calculating an included angle defined by the straight and the reference direction; and rotating the stage according to the included angle.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a gate structure over the fin; forming a recess in the fin and adjacent to the gate structure; performing a wet etch process to clean the recess; treating the recess with a plasma process; and performing a dry etch process to clean the recess after the plasma process and the wet etch process.

Abstract: A wide-angle lens assembly includes a first lens, a second lens, a third lens, a fourth lens, a fifth lens, and a sixth lens. The first lens is with refractive power. The second lens includes a convex surface facing the object side. The third lens is with positive refractive power and includes a convex surface facing the image side. The fourth lens is with refractive power. The fifth lens includes a concave surface facing the object side. The sixth lens includes a concave surface facing the image side. The wide-angle lens assembly satisfies: 0.62<(R41?R42)/(R41+R42)<5.60, wherein R41 is a radius of curvature of an object side surface of the fourth lens and R42 is a radius of curvature of an image side surface of the fourth lens.

Abstract: A transmission cable including a signal wire and a shielding layer is provided. The signal wire is configured to transmit a differential signal provided by an eDP interface or a V-by-one interface. The shielding layer is configured to cover the signal wire. An end of the signal wire receives the differential signal provided by the eDP interface or the V-by-one interface, and another end of the signal wire outputs the differential signal provided by the eDP interface or the V-by-one interface. In addition, a display system is also provided.

Abstract: A lens assembly includes a first lens, a second lens, a third lens, a fourth lens and a fifth lens are arranged in order from an object side to an image side along an optical axis. The first lens has positive refractive power and includes a convex surface facing the object side and a concave surface facing the image side. The second lens has negative refractive power. The third lens has positive refractive power and includes a convex surface facing the object side. The fourth lens has positive refractive power. The fifth lens has negative refractive power and includes a concave surface facing the image side.

Abstract: A lens assembly includes a first lens, a second lens, a third lens, a fourth lens, a fifth lens, and a sixth lens, wherein the first, second, third, fourth, fifth, and sixth lenses are arranged in order from an object side to an image side along an optical axis. The first lens is a meniscus lens with positive refractive power and includes a convex surface facing the object side and a concave surface facing the image side. The second, third, and fourth lenses are with refractive power. The fifth lens is with positive refractive power and includes a convex surface facing the image side. The sixth lens is with negative refractive power and includes a concave surface facing the image side. The lens assembly satisfies: 3<D1/T6<9; wherein D1 is an effective optical diameter of the convex surface of the first lens and T6 is a thickness of the sixth lens.

Abstract: A semiconductor structure includes a substrate having a plurality of fin structures thereon, an isolation oxide structure in the substrate between adjacent two of the plurality of fin structures, a gate disposed on the plurality of fin structures, a gate dielectric layer disposed between the plurality of fin structures and the gate, and a source/drain doped region in each of the plurality of fin structures. The isolation oxide structure has a concave, curved top surface.

Abstract: An optical lens makes object light rays transmit from an object side to an image side on an optical axis and form an image on an image plane. The optical lens comprises a lens group establishing the optical axis, comprising a first lens and a second lens arranged in order from the image side to the object side, wherein the first lens has an image-side surface which is a concave face and has a point of inflection arranged thereon; and a first aperture stop and a second aperture stop separately located on the optical axis. The optical lens meets the thinning tendency.

Abstract: The present invention is related to an electrochemical paper towel sterilizing device, which mainly comprises: at least one sterilizing device, at least one first accommodating space, at least one water-inlet portion, at least one electrolytic component, at least one power-supply element, and at least one second accommodating space. In this way, the second accommodating space is provided with a dry wiping-object (such as a paper towel), and the user can add water into the first accommodating space via the water-inlet portion and electrolyze the water through the electrolytic component to generate the high active oxygen species, and combine the water and the high active oxygen species into the wiping-object, thereby producing a wet wiping-object with sterilizing effect.

Abstract: A wide-angle lens assembly includes a first lens, a second lens, a third lens, a fourth lens, a fifth lens, and a sixth lens. The first lens is with negative refractive power and includes a convex surface facing an object side and a concave surface facing an image side. The second lens is with positive refractive power. The third lens is with positive refractive power and includes a convex surface facing the object side. The fourth lens is with negative refractive power. The fifth lens is with positive refractive power and includes a convex surface facing the image side. The sixth lens is with negative refractive power. The wide-angle lens assembly satisfies: ?1.5<f5/f??0.77, wherein f1 is an effective focal length of the first lens and f5 is an effective focal length of the fifth lens.

Abstract: A semiconductor device includes a substrate, a first well formed in the substrate, a second well formed in the substrate, a first fin formed on the first well, and a second fin formed on the second well. The first well includes a first conductivity type, the second well includes a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other. The substrate includes a first semiconductor material. The first fin and the second fin include the first semiconductor material and a second semiconductor material. A lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The first semiconductor material in the first fin includes a first concentration, the first semiconductor material in the second fin includes a second concentration, and the second concentration is larger than the first concentration.

Abstract: A training apparatus and a training method for providing a sample size expanding model are provided. A normalizing unit receives a training data set with at least one numeric predictor factor and a numeric response factor. An encoding unit trains the training data set in an initial encoding layer and at least one deep encoding layer. A modeling unit extracts a mean vector and a variance vector and inputting the mean vector and the variance vector together into a latent hidden layer for obtaining the sample size expanding model. A decoding unit trains the training data set in at least one deep decoding layer and a last encoding layer. A verifying unit performs a verification of the sample size expanding model according to the outputting data set. A data generating unit generates a plurality of samples via the sample size expanding model.

Abstract: A layout pattern of a static random access memory (SRAM) includes a substrate, a first pull-up transistor (PL1), a first pull-down transistor (PD1), a second (PL2), and a second pull-down transistor (PD2) on the substrate, and a first pass gate transistor (PG1A), a second pass gate transistor (PG1B), a third pass gate transistor (PG2A) and a fourth pass gate transistor (PG2B), wherein the PG1A and the PG1B comprise a first fin structure, the PG2A and the PG2B comprise a second fin structure, a first local interconnection layer disposed between the PG1A and the PG1B and disposed on the fin structures of the PL1 and the PD1, a second local interconnection layer disposed between the PG2A and the PG2B and disposed between the fin structures of the PL2 and the PD2, the first local interconnection layer and the second local interconnection layer are monolithically formed structures respectively.

Abstract: A display panel and a display device applying the same are provided. The display panel includes a first substrate, a second substrate, and a display medium disposed between the first substrate and the second substrate. The first substrate includes a first conductive layer having a first line width and a second conductive layer having a second line width smaller than the first line width. A first spacing is defined by a first sidewall of the second conductive layer and a second sidewall, located on the same side as the first sidewall, of the first conductive layer. A second spacing is defined by a third sidewall of the second conductive layer opposite to the first sidewall and a fourth sidewall, located on the same side as the third sidewall, of the first conductive layer. The first spacing is greater than the second spacing.

Abstract: In an embodiment, a device includes: a substrate; a first semiconductor layer extending from the substrate, the first semiconductor layer including silicon; a second semiconductor layer on the first semiconductor layer, the second semiconductor layer including silicon germanium, edge portions of the second semiconductor layer having a first germanium concentration, a center portion of the second semiconductor layer having a second germanium concentration, the second germanium concentration being less than the first germanium concentration, the edge portions of the second semiconductor layer including sides and a top surface of the second semiconductor layer; a gate stack on the second semiconductor layer; lightly doped source/drain regions in the second semiconductor layer, the lightly doped source/drain regions being adjacent the gate stack; and source and drain regions extending into the lightly doped source/drain regions.

Abstract: A camera device is packaged inside an external shell of an electronic apparatus. The external shell has an opening. The camera device has a transparent plate, a part of which is adjacent to the opening of the external shell. The transparent plate forms an accommodating space for accommodating other components of the camera device. Thus, the dust can be prevented from falling into a shutter blade room of the camera device. The camera device also includes a shutter blade, a driver, and a plate. The plate has an aperture, and the aperture of the camera device is defined thereby. The aperture of the plate is completely pervious to light when the shutter blade is at a first position, and the aperture of the plate is partially pervious to light when the shutter blade is at a second position, thereby changing the aperture of the camera device.

Abstract: A fan includes a frame, an impeller, and a motor. The impeller includes a hub, blades, and air-guiding plates. The hub has a tapered shape and the width of the hub gradually increases. The hub has an air vent. The blades are disposed around the outer periphery of the hub. The air-guiding plates are disposed around the inner periphery of the hub. The motor is disposed in the frame, and connects to and drives the impeller to rotate. The motor includes a stator structure and a rotor structure. The rotor structure includes a shaft, a magnetic conductive housing, and a magnetic element. One end of the shaft connects to the magnetic conductive housing. The magnetic element is disposed around the inner periphery of the magnetic conductive housing and located corresponding to the stator structure. The top surface of the magnetic conductive housing has at least one opening.

Abstract: A semiconductor structure includes a substrate having a plurality of fin structures thereon, an isolation oxide structure in the substrate between adjacent two of the plurality of fin structures, a gate disposed on the plurality of fin structures, a gate dielectric layer disposed between the plurality of fin structures and the gate, and a source/drain doped region in each of the plurality of fin structures. The isolation oxide structure has a concave, curved top surface.

Abstract: A camera device includes a plurality of lenses and an annular body having a fixed hole. The plurality of lenses and the annular body are arranged between an object side and an image side along an optical axis. The annular body includes an annular main body, an outer circumferential portion, and an inner circumferential portion, wherein the annular main body connects to the outer circumferential portion and the inner circumferential portion, and the inner circumferential portion is non-circular and surrounds the optical axis to form the fixed hole. The camera device satisfies: EFL/?{square root over (4A/?)}=(EFL/Dx+EFL/Dy)×K1; K1?0.49, where EFL is an effective focal length of the camera device, A is an area of the fixed hole, K1 is a constant, Dx is a maximum dimension of the fixed hole through which the optical axis passes, and Dy is a minimum dimension of the fixed hole through which the optical axis passes.

Abstract: A flyback power converter circuit includes a transformer, a power switch, a primary side controller circuit, and a secondary side controller circuit. The transformer converts an input voltage to a first, a second and a third output voltages. The primary side controller circuit and the secondary side control are powered by the second voltage and a third voltage, respectively. In a burst mode, when the second output voltage is lower than a first threshold, a power regulation mode is triggered to control the power switch, such that the second output voltage is between the first threshold and a second threshold. After a predetermined delay time period, the power regulation mode stops and the flyback power converter circuit enters a reboot procedure, wherein the power switch is OFF such that the third voltage is lower than a secondary side reboot threshold, whereby the secondary side controller circuit is reboot.