Abstract: An electronic device is provided by the present disclosure, wherein the electronic device includes at least one chip unit, a circuit structure electrically connected to the at least one chip unit, and a heat dissipation layer disposed at a side of the at least one chip unit opposite to the circuit structure, wherein the heat dissipation layer includes an insulating material layer and a plurality of silicon carbide particles, the insulating material layer clads the silicon carbide particles, and the silicon carbide particles have rounded-corner structures.

Abstract: A reality image reconstruction system includes: a sensing device for sensing an outdoor environment and objects therein to generate environmental parameters of the outdoor environment and object parameters of said objects; a cloud server for receiving the environmental parameters of the outdoor environment, the object parameters of said objects, and movement parameters of the sensing device to establish prediction parameters and physical parameters of said objects in the outdoor environment; a simulation device for establishing a virtual environment synchronized with the outdoor environment according to the environmental parameters of the outdoor environment, the object parameters, the prediction parameters and the physical parameters of said objects; and an interactive device for interacting with said objects realistically in the virtual environment according to the environmental parameters of the outdoor environment, the object parameters, the prediction parameters and the physical parameters of said object

Abstract: An electronic device and a manufacturing method of the electronic device are provided by the present disclosure, wherein the electronic device includes at least one chip unit, a circuit structure electrically connected to the at least one chip unit, and a heat dissipation layer disposed at a side of the at least one chip unit opposite to the circuit structure, wherein the heat dissipation layer includes an insulating material layer and a plurality of silicon carbide particles, the insulating material layer clads the silicon carbide particles, and the silicon carbide particles have monocrystal structures.

Abstract: According to one or more aspects of the present disclosure a wearable oral device is provided. The wearable oral device may include a mouthpiece; a bone conduction component; and a processing device. The processing device may detect one or more user interactions by a first user with the wearable oral device; and perform one or more operations in view of the one or more user interactions. The one or more user interactions may include a user interaction by the first user with the mouthpiece. The one or more operations may include presenting a content item via the bone conduction component of the wearable oral device. The content item may include audio content. In some embodiments, the content item comprises a voice message from a second user.

Abstract: Disclosed is a method for manufacturing a detection panel, which includes the following steps. A first flexible board is provided, and the first flexible board has a circuit layer. A second flexible board is provided, the first flexible board is fixed on the second flexible board, and the first flexible board is disposed between the circuit layer and the second flexible board. A carrier board is provided, the carrier board is fixed on the second flexible board, and the second flexible board is disposed between the carrier board and the first flexible board. A scintillator is formed on the circuit layer. The carrier board is detached from the second flexible board. The first flexible board and the second flexible board are cut to form the detection panel.

Abstract: The present disclosure provides a structure and a method to reduce electro-migration. An interconnect structure according to the present disclosure includes a conductive feature embedded in a dielectric layer, a capping barrier layer disposed over the conductive feature and the dielectric layer, and an adhesion layer sandwiched between the capping barrier layer and the dielectric layer. The adhesion layer includes a degree of crystallinity between about 40% and about 70%.

Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a first metal layer over a semiconductor substrate, and forming a first layer over the first metal layer. The first layer and first metal layer are etched to expose a sidewall of the first layer and a sidewall of the first metal layer, wherein the etching disburses a portion of the first metal layer to create an accumulation of material on at least one of the sidewall of the first layer or the sidewall of the first metal layer. At least some of the accumulation is etched away using an etchant comprising fluorine.

Abstract: Embodiments include a Schottky barrier diode (SBD) structure and method of forming the same, the SBD structure including a current blockage feature to inhibit current from leaking at an interface with a shallow trench isolation regions surrounding an anode region of the SBD structure.

Abstract: A method includes forming a dummy gate structure across a fin, in which the dummy gate structure has a dummy gate dielectric layer and a dummy gate electrode, forming gate spacers on sidewalls of the dummy gate structure, forming source/drain epitaxial structures on sides of the dummy gate structure, performing a first etch process to the dummy gate electrode such that a recessed dummy gate electrode remains over the fin, performing a second etch process to the gate spacers such that recessed gate spacers remain over the sidewalls of the dummy gate structure, removing the recessed dummy gate electrode and the dummy gate dielectric layer after the second etch process to form a recess between the recessed gate spacers, forming a gate structure overfilling the recess, and performing a third etch process to the gate structure such that a recessed gate structure remains between the recessed gate spacers.

Abstract: An electronic device is provided. The electronic device includes a first dielectric layer, an electronic element, an encapsulant, and a second dielectric layer. The first dielectric layer has a first coefficient of thermal expansion (CTE). The electronic element is disposed over the first dielectric layer. The encapsulant encapsulates the electronic element and has a second CTE. The second dielectric layer is disposed over the encapsulant and having a third CTE. The second CTE ranges between the first CTE and the third CTE.

Abstract: Semiconductor dies of a semiconductor die package are directly bonded, and a top metal region may be formed over the semiconductor dies. A plurality of conductive terminals may be formed over the top metal region. The conductive terminals are formed of copper (Cu) or another material that enables low-temperature deposition process techniques, such as electroplating, to be used to form the conductive terminal. In this way, the conductive terminals of the semiconductor die packages described herein may be formed at a relatively low temperature. This reduces the likelihood of thermal deformation of semiconductor dies in the semiconductor die packages. The reduced thermal deformation reduces the likelihood of warpage, breakage, and/or other types of damage to the semiconductor dies of the semiconductor die packages, which may increase performance and/or increase yield of semiconductor die packages.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A bottom-emission light-emitting diode (LED) display includes a transparent substrate, a plurality of LEDs bonded on the substrate, a packaging layer formed on the substrate to cover the LEDs, and a reflecting layer formed on the packaging layer to reflect light emitted by the plurality of LEDs. The reflecting layer has a non-smooth shape or the packaging layer has different refractivities.

Abstract: An X-ray device, including a sensor panel and a flexible scintillator structure disposed on the sensor panel, is provided. A manufacturing method of the X-ray device is also provided.

Abstract: Systems and methods for natural language generation by an edge computing device are disclosed. In one embodiments, a method comprises: receiving, by an edge computing device, event data from an edge event; determining, by the edge computing device, that a network connection to a cloud server is not available; extracting, by the edge computing device, features of the event data; predicting, by a local neural network of the edge computing device, an action for the edge computing device to take based on the features of the event data, wherein the action is associated with a confidence level; and determining, by the edge computing device, whether the confidence level meets a predetermined threshold value.

Abstract: An access point provides a hidden wireless network that is configured with a set of SSIDs so that the hidden network is discoverable with multiple different SSIDs. Based on detection of a probe request frame which indicates an SSID from a device, the access point determines if the SSID for which network availability is requested matches one of the SSIDs in the set. If the SSID does match one of those included in the set, the SSID correctly identifies the hidden network, and the access point responds with a probe response frame. Devices connected to the hidden network may have initiated the establishment of the connection with a different SSIDs despite the hidden network being a single wireless network. Scaling the number of supported SSIDs therefore does not impact the frequency with which the access point transmits beacon frames for the hidden network.

Abstract: A wet etching solution according to the present disclosure is an etching solution for selectively removing a second metal layer made of at least one of a cobalt-based material or a copper-based material from a semiconductor substrate while suppressing etching of a first metal layer made of a tungsten-based material, the first metal layer and the second metal layer being co-present on the semiconductor substrate, an oxide layer being formed on a surface layer of at least the at least one of a cobalt-based material or a copper-based material. The wet etching solution includes a solution in which a ?-diketone containing a trifluoromethyl group and a carbonyl group bonded together is dissolved in an organic solvent.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: An induction motor with on-rotor slip power recovery may have a rotor and a stator element. The rotor element has a rotor winding system with a number of winding units wound-distributed for inducing a rotor magnetic field. Each winding unit has an induction and an augmentation subwinding. The induction subwinding has two legs of each a number of induction conductor segments. The induction subwinding induces an emf that drives a rotor current in the rotor winding system to generate a basic induction component for the rotor magnetic field when the induction conductor segments move in the stator element. The augmentation subwinding has two legs of each a number of augmentation conductor segments aligned parallel to the induction conductor segments. The augmentation subwinding being wound that the two legs of augmentation conductor segments are immediately next to each other and positioned mid-way between the two legs of induction conductor segments.

Abstract: The disclosure describes embodiments of an apparatus including a first gas chromatograph including a fluid inlet, a fluid outlet, and a first temperature control. A controller is coupled to the first temperature control and includes logic to apply a first temperature profile to the first temperature control to heat, cool, or both heat and cool the first gas chromatograph. Other embodiments are disclosed and claimed.