Abstract: A method for building a temperature prediction model is applicable to a heat cycle system, wherein the method is used to measure a temperature of the heat cycle system to generate a measured temperature data, and compute a response time of the heat cycle system, and the method includes aligning the measured temperature data and a setting value of the heat cycle system to generate a training data according to the response time; and building the temperature prediction model according to a statistic model and the training data.

Abstract: A method of making a semiconductor device includes steps related to forming source and drain wells of a transistor in a semiconductor substrate; forming a gate electrode of the transistor over the semiconductor substrate; forming an isolation structure in the semiconductor substrate adjacent to the transistor; and depositing a first inter-dielectric layer (ILD) material over the transistor and the isolation structure. The method also includes steps for depositing a capacitor film stack over the first ILD material, forming a pattern in the capacitor film stack over the isolation structure, and forming a capacitor plate by etching a conductive material of the capacitor film stack. Etching the conductive material includes performing a liquid etch process with a selectivity of at least 16 with regard to other materials in the capacitor film stack.

Abstract: A ventricular assist device is provided, including a blood pump, a driveline and a feedthrough. The blood pump includes a pump housing, an axi-symmetric oval-shaped blood sac and stem assembly received in the pump housing, and a pressure sensing system embedded in the pump housing. The driveline includes a pneumatic lumen, at least one electric wire and a tether included in a wall of the driveline, wherein the electric wires and the tether are disposed on the pneumatic lumen. The feedthrough connects the driveline to the pump housing.

Abstract: A method includes: receiving a photomask; patterning a wafer by directing a first radiation beam to the wafer through the photomask at a first tilt angle; and inspecting the photomask. The inspecting includes: directing a second radiation beam to the photomask at a second tilt angle greater than the first tilt angle; receiving a third radiation beam reflected from the photomask; and generating an image of the photomask according to the third radiation beam.

Abstract: A system may include a display driven using display driving circuitry to present an image via pixels. The display driving circuitry may include a sensor core compatible with one or more strain sensing circuits. The same sensor core may be used by a control system of the display to sense a stress applied to a strained region of a display using a current divider sensing circuit and/or a Wheatstone bridge sensing circuit.

Abstract: An access point provides a hidden wireless network that is configured with a set of SSIDs so that the hidden network is discoverable with multiple different SSIDs. Based on detection of a probe request frame which indicates an SSID from a device, the access point determines if the SSID for which network availability is requested matches one of the SSIDs in the set. If the SSID does match one of those included in the set, the SSID correctly identifies the hidden network, and the access point responds with a probe response frame. Devices connected to the hidden network may have initiated the establishment of the connection with a different SSIDs despite the hidden network being a single wireless network. Scaling the number of supported SSIDs therefore does not impact the frequency with which the access point transmits beacon frames for the hidden network.

Abstract: An apparatus and a method forming a semiconductor structure are provided. The method includes receiving a substrate; mounting the substrate to a polishing head with a side of the substrate facing a polishing pad, the polishing pad comprising a first region and a second region; grinding the substrate against the polishing pad; and adjusting a temperature of the first region and a temperature of the second region.

Abstract: A method includes forming a dummy gate structure across a fin, in which the dummy gate structure has a dummy gate dielectric layer and a dummy gate electrode, forming gate spacers on sidewalls of the dummy gate structure, forming source/drain epitaxial structures on sides of the dummy gate structure, performing a first etch process to the dummy gate electrode such that a recessed dummy gate electrode remains over the fin, performing a second etch process to the gate spacers such that recessed gate spacers remain over the sidewalls of the dummy gate structure, removing the recessed dummy gate electrode and the dummy gate dielectric layer after the second etch process to form a recess between the recessed gate spacers, forming a gate structure overfilling the recess, and performing a third etch process to the gate structure such that a recessed gate structure remains between the recessed gate spacers.

Abstract: An information handling system display removably couples to a housing with a sliding structure of the display that engages a coupling structure disposed at opposing sides of the housing. For example, the sliding structure is a member that aligns under a lip formed in the coupling structure. In one embodiment, the sliding structure comprises plural pins extending from opposing sides of the display to enter channels at the side of the housing that direct the pins under a lip at the base of the channel.

Abstract: A bottom-emission light-emitting diode (LED) display includes a transparent substrate, a plurality of LEDs bonded on the substrate, a packaging layer formed on the substrate to cover the LEDs, and a reflecting layer formed on the packaging layer to reflect light emitted by the plurality of LEDs. The reflecting layer has a non-smooth shape or the packaging layer has different refractivities.

Abstract: A Quality of Experience (QoE) optimization system and method are provided. An electronic device inputs key performance indicators (KPIs) and system control parameters collected from a core network, a base station and a user equipment (UE) into a QoE optimization model. The QoE optimization model then optimizes the system control parameters based on the KPIs and a user QoE fed back from the UE to output optimized system control parameters. Furthermore, a strategy emulator controls at least one of a base station emulator and a UE emulator, so as to emulate the QoE optimization model using the at least one of the base station emulator and the UE emulator. Non-real-time optimization adjustments to the QoE optimization model are made based on the result of the emulation performed by the at least one of the base station emulator and the UE emulator.

Abstract: In one example, an electronic device may include a display screen defining a plurality of display regions. Further, the electronic device may include a camera to capture an image of an operator of the electronic device. Furthermore, the electronic device may include a controller operatively coupled to the camera and the display screen. The controller may detect an orientation of the operator's face with respect to the display screen using the captured image. Further, the controller may determine a first display region of the plurality of display regions corresponding to the detected orientation of the operators face. Furthermore, the controller may activate the first display region to position a cursor of a pointing device within the first display region.

Abstract: An intelligence-defined optical tunnel network system includes pods. Each pod includes optical add-drop sub-systems. Each optical add-drop sub-system includes a first transmission module and a second transmission module. The first transmission modules of the optical add-drop sub-systems are connected to each other for forming a first transmission ring. The second transmission modules of the optical add-drop sub-systems are connected to each other for forming a second transmission ring. Each first transmission module includes a multiplexer and an optical signal amplifier. The multiplexer is connected to a Top-of-Rack switch. The multiplexer is configured to receive, through input ports, upstream optical signals from the Top-of-Rack switch, and combine the upstream optical signals into a composite optical signal. The upstream optical signals have wavelengths respectively.

Abstract: A composition having Lactobacillus Plantarum strain GMNL-662 for promoting bone regrowth is provided. The Lactobacillus Plantarum strain GMNL-662 has an ability to promote the expression of osteogenic genes, inhibit the expression of osteoclast related genes, and promote the expression of osteogenesis-related cytokine TGF-?, so that the bone loss is improved.

Abstract: A MEMS die includes a substrate having an opening formed therein, and a diaphragm attached around a periphery thereof to the substrate and over the opening, wherein the diaphragm comprises first and second spaced apart layers. A backplate is disposed between the first and second spaced apart layers. One or more columnar supports are disposed through holes disposed through the backplate and connecting the first and second spaced apart layers. At least a partial vacuum exists between at least a portion of the first and second spaced apart layers. The first layer further comprises interior and exterior sub-layers at least proximate to each of the one or more columnar supports, wherein the interior sub-layers include one or more apertures disposed therethrough.

Abstract: A power adjustment system and a power adjustment method of an autonomous mobile device are provided. In the power adjustment method, two first current control signals respectively transmitted to two drivers are outputted by a control module. A tilt angle of the autonomous mobile device is detected by an inertial measurement module. A travel route is planned by a navigation module, and the control module obtains a steering angle of the autonomous mobile device during a traveling process. According to different weight values of the autonomous mobile device stored in a database module, a weight of the autonomous mobile device is estimated by the control module. According to the two first current control signals and the weight, the steering angle, and the tilt angle of the autonomous mobile device, two second current control signals respectively transmitted to the two drivers are outputted by the control module.

Abstract: A semiconductor device having source and drain regions in a semiconductor substrate, a transistor including a gate electrode over the semiconductor substrate, an isolation structure in the semiconductor substrate adjacent to the transistor, a first inter-dielectric layer (ILD) material over the isolation structure, and a capacitor film stack over the first ILD material that includes an isolation plate over and covering a capacitor plate, and a contact to the capacitor plate.

Abstract: A touch sensor comprises a first electrode, a second electrode arranged spaced apart from the first electrode, and an insulator arranged between the first electrode and the second electrode, wherein at least one of the first electrode and the second electrode is energized, and an energy difference exists between the first electrode and the second electrode. At least one of the first electrode and the second electrode is a stressed electrode. When the stressed electrode is not stressed, no electrical signal is generated, and when the stressed electrode is stressed, the stressed electrode deforms at a stressed point and changes the distance between the stressed point and the other electrode to generate a tunneling current, and the touch sensor generates the electrical signal according to whether the tunneling current is generated. Therefore, the invention solves a limitation of the conventional touch sensor in touching and provides good touching sensitivity.

Abstract: An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.

Abstract: The present disclosure provides a structure and a method to reduce electro-migration. An interconnect structure according to the present disclosure includes a conductive feature embedded in a dielectric layer, a capping barrier layer disposed over the conductive feature and the dielectric layer, and an adhesion layer sandwiched between the capping barrier layer and the dielectric layer. The adhesion layer includes a degree of crystallinity between about 40% and about 70%.