Abstract: In a method of manufacturing a semiconductor device, a fin structure in which first semiconductor layers and second semiconductor layers are alternately stacked is formed, a sacrificial gate structure is formed over the fin structure, a source/drain region of the fin structure, which is not covered by the sacrificial gate structure, is etched, thereby forming a source/drain space, the first semiconductor layers are laterally etched through the source/drain space, and a source/drain epitaxial layer is formed in the source/drain space. An inner spacer made of a dielectric material is formed on an end of each of the etched first semiconductor layers and at least one of the spacer has width changes along vertical direction of device. At least one of the first semiconductor layers has a composition different from another of the first semiconductor layers.

Abstract: A textile structure includes a fiber-based layer and a glue layer. The fiber-based layer has meshes and includes fiber of which basic composition is cellulose. The glue layer penetrates into the meshes.

Abstract: An immersion lithography system includes an immersion hood, wherein the immersion hood includes a lens system. The immersion lithography system further includes a wafer stage, wherein the wafer stage is moveable relative to the immersion hood, and the wafer stage includes an area for receiving a wafer. The immersion lithography system further includes a first particle capture area on the wafer stage outside of the area for receiving the wafer, wherein the first particle capture area includes silicon, silicon nitride oxide or a photoresist material.

Abstract: In a method of manufacturing a semiconductor device, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately stacked, is formed. A sacrificial gate structure is formed over the fin structure. A source/drain region of the fin structure, which is not covered by the sacrificial gate structure, is etched, thereby forming a source/drain space. The first semiconductor layers are laterally etched through the source/drain space. An inner spacer made of a dielectric material is formed on an end of each of the etched first semiconductor layers. A source/drain epitaxial layer is formed in the source/drain space to cover the inner spacer. At least one of the first semiconductor layers has a composition which changes along a stacked direction of the first semiconductor layers and second semiconductor layers.

Abstract: A vehicle driving device is driven by a power unit. A three-phase motor includes a first stator winding and a second stator winding. The first stator winding is connected in parallel to the second stator winding, and the first stator winding and the second stator winding are synchronized with each other. A first current sensor is coupled to the first stator winding for measuring a first-phase current. A second current sensor is coupled to the first stator winding for measuring a second-phase current. A third-phase current of the first stator winding is generated according to a calculating procedure of the first-phase current and the second-phase current. A duty cycle between a first power module and a second power module is controlled according to a feedback compensation of the first-phase current, the second-phase current and the third-phase current.

Abstract: The present invention provides a detection device and a method with simplified computing manner A transmitter transmits detection signals to an environment to detect a target. At least a portion of the detection signals are reflected by the target to generate a plurality of reflection signals. A receiver comprises a plurality of receiving units. Each of the receiving units receives the reflection signals to generate a receiving signal. A processing module connected to the receiver includes a conversion unit, an integration unit and a computing unit. The conversion unit converts the receiving signals into transformation signals by a time-domain to frequency-domain transformation. The integration unit integrates the transformation signals into a first integration signal and a second integration signal. The computing unit decomposes the first integration signal and the second integration signal to 1D arrays.

Abstract: A splicable environmentally-friendly non-PVC advertising cloth made of a woven structure, wherein the advertising cloth comprising a mesh base layer (40); a first adhesion-promoting structural layer (10), which is a refractory and waterproof layer covering the front surface (43) and the rear surface (44) of the mesh base layer (40); a second adhesion-promoting structural layer (20) coated on the first surface (13) of the first adhesion-promoting structure layer (10); and a third adhesion-promoting structural layer (30) coated on the upper surface (24) of the second adhesion-promoting structure layer (20), therefore, waterproof and ink-absorbing structure arranged on a mesh base (40) layer, and the width of the advertising cloth (50) can be spliced unlimitedly as required by using high frequency splicing, making the environmentally friendly advertising cloth more applicable also improving the overall advertising effect and quality.

Abstract: A method for manufacturing an electronic device is provided. The method includes the following steps: providing a first mother substrate including a plurality of first substrate areas; performing a first half-cutting step on the first mother substrate to produce a first crack to define the plurality of first substrate areas; disposing a first optical film on the first mother substrate having the first crack, wherein the first optical film has a first cutting region corresponding to the first crack; performing a first cutting step in the first cutting region of the first optical film; and separating the plurality of first substrate areas to form a plurality of first substrates.

Abstract: A power detecting device includes a vehicle driving system, a battery detecting module and a controlling module. A first stator winding and a second stator winding are synchronized and connected in parallel with each other. A first end of a first current sensor is coupled to a first-phase winding end of the first stator winding for measuring a first-phase current. A first end of a second current sensor is coupled to a second-phase winding end of the first stator winding for measuring a second-phase current. The battery detecting module is coupled to a first power supply for measuring a current signal and a voltage signal. A controller generates a first power according to the current signal and the voltage signal and generates a second power according to a plurality of data from a database. The controller compares the first power with the second power to generate a detecting result.

Abstract: According to one or more aspects of the present disclosure a wearable oral device is provided. The wearable oral device may include a mouthpiece; a bone conduction component; and a processing device. The processing device may detect one or more user interactions by a first user with the wearable oral device; and perform one or more operations in view of the one or more user interactions. The one or more user interactions may include a user interaction by the first user with the mouthpiece. The one or more operations may include presenting a content item via the bone conduction component of the wearable oral device. The content item may include audio content. In some embodiments, the content item comprises a voice message from a second user.

Abstract: An immersion lithography system includes an immersion hood, wherein the immersion hood includes a lens system. The immersion lithography system further includes a wafer stage, wherein the wafer stage is moveable relative to the immersion hood, and the wafer stage includes an area for receiving a wafer. The immersion lithography system further includes a first particle capture area on the wafer stage outside of the area for receiving the wafer, wherein the first particle capture area includes silicon, silicon nitride oxide or a photoresist material.

Abstract: A method for forming a semiconductor device includes patterning a substrate to form a strip including a first semiconductor material, forming an isolation region along a sidewall of the strip, an upper portion of the strip extending above the isolation region, forming a dummy structure along sidewalls and a top surface of the upper portion of the strip, performing a first etching process on an exposed portion of the upper portion of the strip to form a first recess, the exposed portion of the strip being exposed by the dummy structure, after performing the first etching process, reshaping the first recess to have a V-shaped bottom surface using a second etching process, wherein the second etching process is selective to first crystalline planes having a first orientation relative to second crystalline planes having a second orientation, and epitaxially growing a source/drain region in the reshaped first recess.

Abstract: An integrated circuit die includes a FinFET transistor. The FinFET transistor includes an anti-punch through region below a channel region. Undesirable dopants are removed from the anti-punch through region during formation of the source and drain regions. When source and drain recesses are formed, a layer of dielectric material is deposited in the recesses. An annealing process is then performed. Undesirable dopants diffuse from the anti-punch through region into the layer of dielectric material during the annealing process. The layer of dielectric material is then removed. The source and drain regions are then formed by depositing semiconductor material in the recesses.

Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a first metal layer over a semiconductor substrate, and forming a first layer over the first metal layer. The first layer and first metal layer are etched to expose a sidewall of the first layer and a sidewall of the first metal layer, wherein the etching disburses a portion of the first metal layer to create an accumulation of material on at least one of the sidewall of the first layer or the sidewall of the first metal layer. At least some of the accumulation is etched away using an etchant comprising fluorine.

Abstract: A system for synthesizing signal of user equipment and a method thereof are provided. The system includes a physical channel modeler and a physical channel training module. The physical channel modeler receives geo information of a field under test of and a sparse real physical field channel feature to build a physical channel model. The physical channel modeler estimates a plurality of predefined positions of the geo information to obtain a plurality of simulated physical field channel features corresponding to the predefined positions. The physical channel training module receives and performs training on the geo information, the sparse real physical field channel feature and the simulated physical field channel features by using an AI algorithm to perform an inference of a fully real physical field channel feature.

Abstract: A method of making a semiconductor device includes steps related to forming source and drain wells of a transistor in a semiconductor substrate; forming a gate electrode of the transistor over the semiconductor substrate; forming an isolation structure in the semiconductor substrate adjacent to the transistor; and depositing a first inter-dielectric layer (ILD) material over the transistor and the isolation structure. The method also includes steps for depositing a capacitor film stack over the first ILD material, forming a pattern in the capacitor film stack over the isolation structure, and forming a capacitor plate by etching a conductive material of the capacitor film stack. Etching the conductive material includes performing a liquid etch process with a selectivity of at least 16 with regard to other materials in the capacitor film stack.

Abstract: A vehicle driving device is driven by a power unit. A three-phase motor includes a first stator winding and a second stator winding. The first stator winding is connected in parallel to the second stator winding, and the first stator winding and the second stator winding are synchronized with each other. A first current sensor is coupled to the first stator winding for measuring a first-phase current. A second current sensor is coupled to the first stator winding for measuring a second-phase current. A third-phase current of the first stator winding is generated according to a calculating procedure of the first-phase current and the second-phase current. A duty cycle between a first power module and a second power module is controlled according to a feedback compensation of the first-phase current, the second-phase current and the third-phase current.

Abstract: A power detecting device includes a vehicle driving system, a battery detecting module and a controlling module. A first stator winding and a second stator winding are synchronized and connected in parallel with each other. A first end of a first current sensor is coupled to a first-phase winding end of the first stator winding for measuring a first-phase current. A first end of a second current sensor is coupled to a second-phase winding end of the first stator winding for measuring a second-phase current. The battery detecting module is coupled to a first power supply for measuring a current signal and a voltage signal. A controller generates a first power according to the current signal and the voltage signal and generates a second power according to a plurality of data from a database. The controller compares the first power with the second power to generate a detecting result.

Abstract: The present invention provides a method, system, and apparatus that can substantially reduce the recirculation of venovenous extracorporeal membrane oxygenation (VV ECMO) associated with the two-site, single-lumen cannulation approach. Actively-controlled flow regulators comprising balloon, occluder and reservoir can be individually or collectively equipped on the drainage and/or infusion cannulas to accomplish the goal of maximizing VV ECMO support efficacy. Three specific embodiments are introduced to illustrate the practical enforcement of the proposed blood flow control in reference to the heart rhythm, aiming at achieving the maximal reduction of oxygenated blood flow recirculating back to the VV ECMO circuit.

Abstract: A first neural network model of a user device processes audio data to extract audio embeddings that represent vocal characteristics of a user of an utterance represented in the audio data. The audio embeddings may then be hashed to remove characteristics specific to the user while still maintaining a unique set of characteristics. The hashed embeddings may be sent to a remote system, which may use them to identify the user.