Abstract: A method of fabrication a transistor device with a non-uniform stress layer including the following processes. First, a semiconductor substrate having a first transistor region is provided. A low temperature deposition process is carried out to form a first tensile stress layer on a transistor within the first transistor region, wherein a temperature of the low temperature deposition process is lower than 300 degree Celsius (° C.). Then, a high temperature annealing process is performed, wherein a temperature of the high temperature annealing process is at least 150° C. higher than a temperature of the low temperature deposition process. Finally, a second tensile stress layer is formed on the first tensile stress layer, wherein the first tensile stress layer has a tensile stress lower than a tensile stress of the second tensile stress layer.

Abstract: An unmanned aerial vehicle image processing system includes a digital camera mounted on an unmanned aerial vehicle, an autopilot controller installed in the unmanned aerial vehicle and pre-loaded with a base image, and a computer device. The autopilot controller programs a flight path as a series of mission lags to cover a target polygon on the base image in a lawnmower pattern for controlling the unmanned aerial vehicle to perform a flight mission in which the autopilot controller records plural GPS/INS data and triggers the digital camera to take plural photos which are further calibrated to generate plural calibrated photos corresponding to the plural GPS/INS data, respectively. The computer device processes the plural calibrated photos to generate plural projected photos by using the corresponding plural GPS/INS data, respectively, and stitches the plural projected photos to a mosaic image by a photo-stitching process.

Abstract: A method for fabricating semiconductor device with fin-shaped structure is disclosed. The method includes the steps of: forming a fin-shaped structure on a substrate; forming a first dielectric layer on the substrate and the fin-shaped structure; depositing a second dielectric layer on the first dielectric layer; etching back a portion of the second dielectric layer; removing part of the first dielectric layer to expose a top surface and part of the sidewall of the fin-shaped structure; forming an epitaxial layer to cover the exposed top surface and part of the sidewall of the fin-shaped structure; and removing a portion of the second dielectric layer.

Abstract: A method of fabricating a semiconductor device includes the following steps. First, a semiconductor substrate is provided, which includes at least a fin structure and at least a gate semiconductor layer disposed thereon. The gate semiconductor layer covers a portion of the fin structure. Then a sacrificial layer is deposited to cover the fin structure entirely. Subsequently, a top surface of the fin structure is exposed from the sacrificial layer through an etching process. A material layer is then deposited, which covers the gate semiconductor layer, the fin structure and the sacrificial layer conformally. Finally, the material layer is etched until the top surface of the fin structure is exposed and a first spacer is concurrently formed on side surfaces of the gate semiconductor layer.

Abstract: A semiconductor device including a substrate, a spacer and a high-k dielectric layer having a U-shape profile is provided. The spacer located on the substrate surrounds and defines a trench. The high-k dielectric layer having a U-shape profile is located in the trench, and the high-k dielectric layer having a U-shape profile exposes an upper portion of the sidewalls of the trench.

Abstract: A metal gate structure located on a substrate includes a gate dielectric layer, a metal layer and a titanium aluminum nitride metal layer. The gate dielectric layer is located on the substrate. The metal layer is located on the gate dielectric layer. The titanium aluminum nitride metal layer is located on the metal layer.

Abstract: The method and system for reminding readers of fatigue in reading while using electronic devices are revealed. First use a reading speed calculation module to detect user's reading speed within a period of time when the user is using an electronic with a display to read. The reading speed is related to pages being turned or the amount of words being read. Then a fatigue-in-reading reminder module is activated by the reading speed calculation module when the user's reading speed falls within a specific range so as to remind the user by pop-up windows, sounds, flash light or vibration at the proper time and provide the user certain corresponding measures he/she should take. Thereby there is no need to use additional equipment for preventing users from becoming more fatigue and healthy vision is accomplished at lower cost with higher efficiency.

Abstract: A semiconductor device with fin-shaped structure is disclosed. The semiconductor device includes: a substrate; a fin-shaped structure on the substrate; and an epitaxial layer on a top surface and part of the sidewall of the fin-shaped structure, in which the epitaxial layer and the fin-shaped structure includes a linear gradient of germanium concentration therebetween.

Abstract: A method of fabricating semiconductor patterns includes steps as follows: Firstly, a substrate is provided and has at least a first semiconductor pattern and at least a second semiconductor pattern, wherein a line width of the first semiconductor pattern is identical to a line width of the second semiconductor pattern. Then, a barrier pattern is formed over a surface of the first semiconductor pattern, and the second semiconductor pattern is exposed. Then, a surface portion of the second semiconductor pattern is reacted to form a sacrificial structure layer. Then, the barrier pattern and the sacrificial structure layer are removed, and the line width of the second semiconductor pattern is shrunken to be less than the line width of the first semiconductor pattern. A third semiconductor pattern having a line width can be further provided.

Abstract: Display devices with improved routing between connectors and source drivers disposed on a substrate such as glass. Various features improve different characteristics of the routings between the connectors and source drivers. For example, a t-shaped connector is provided to ensure voltage provided to the source drivers is approximately equal. Routings may be tapered (i.e., altered in width) to reduce the amount of area consumption in locations where doing so is desirable but to decrease resistance in areas having more space. Routings may also include stacked power supply and ground traces to provide benefits such as improved decoupling capacitance. Other features are provided.

Abstract: An operating method of an electronic apparatus and a touch apparatus are provided. In the method, a touch action by a user on a touch panel is detected through a controller of the touch apparatus, so as to obtain a contact region touched by the touch action on the touch panel. Subsequently, whether the touch action includes a palm touch is determined based on a size of the contact region. Under the situation that the touch action includes the palm touch, palm touching information corresponding to the palm touch is transformed into mouse controlling information through a mouse simulating device of the touch apparatus. Further, the mouse controlling information is sent to a mouse driver through the mouse simulating device, such that the mouse driver executes mouse operation based on the mouse controlling information.

Abstract: A gap-filling dielectric layer, method for fabricating the same and applications thereof are disclosed. A silicon-containing dielectric layer is firstly deposited on a substrate. The silicon-containing dielectric layer is then subjected to a curing process, an in-situ wetting treatment and an annealing process in sequence, whereby a gap-filling dielectric layer with a nitrogen atom density less than 1×1022 atoms/cm3 is formed.

Abstract: A via structure and a method of forming the same are provided. In the forming method of the present invention, a via is formed in a dielectric layer. Next, a U-shaped seed layer is formed in the via. After that, a conductive material is selectively formed in the via to form a conductive bulk layer in the via. Through the present invention, the purposes of effectively removing the overhang adjacent to the opening of the via and protecting the U-shaped seed layer in the via can be achieved.

Abstract: The disclosure is directed to a method of providing location information for a mobile electronic device and a mobile electronic device using the same method. In one of the exemplary embodiments, the mobile electronic device would receive a first signal that indicates capturing a multimedia file. In response to receiving the first signal, the mobile electronic device would transmit to an external device a second signal in response to receiving the first signal. In response to transmitting the second signal, the mobile electronic device may receive from the external device a first location information or an ephemeris. The mobile electronic device may then determine the first location information either based on the first location information as received or based on the ephemeris. Also, the mobile electronic device may associate the multimedia file with the first location information.

Abstract: The disclosure is directed to a remote access method and related devices using the same. In one of the exemplary embodiments, the method would include not limited to initiating a first connection between a first wireless interface of a first mobile device and a first wireless interface of a third mobile device; activating a first wireless access point by using a second wireless interface of a second mobile device; detecting the first wireless access point by using a second wireless interface of the third mobile device; disconnecting the first connection by the third mobile device in response to the first wireless access point being detected; and initiating a second connection between a first wireless interface of the second mobile device and a first wireless interface of the third mobile device.

Abstract: A camera device. A housing includes a first portion, a second portion and a curved portion disposed between the first portion and the second portion and including a curved surface. The lens is disposed on an end surface of the housing. The image sensor is coupled to the lens for obtaining image data captured by the lens. The first input unit is disposed on the curved surface and provided as a first input interface for a user. The grip sensor is disposed on the first portion for sensing whether the first portion is held by the user. The lens and the image sensor operate in a sleep mode by default to reduce power consumption. When the grip sensor senses that the first portion is held by the user, the grip sensor generates a sensing signal to wake up the lens and the image sensor.

Abstract: A portable device and a manipulation method are disclosed. The portable device includes a camera unit, a first sensor and a control module. The camera unit has a plurality of functional modes. The functional modes include a photo-capturing mode and a video-recording mode. The first sensor is disposed on the portable device and configured for sensing a manipulation input. The manipulation input has a manipulation pattern and duration information of the manipulation pattern. The control module is coupled with the camera unit and the first sensor. The control module is configured for selecting one of the functional modes corresponding to the manipulation pattern and the duration information sensed by the first sensor, and triggering the camera unit into the selected functional mode.

Abstract: A semiconductor device with fin-shaped structure is disclosed. The semiconductor device includes: a substrate; a fin-shaped structure on the substrate; and an epitaxial layer on a top surface and part of the sidewall of the fin-shaped structure, in which the epitaxial layer and the fin-shaped structure includes a linear gradient of germanium concentration therebetween.

Abstract: A management method of a hybrid storage unit and an electronic apparatus of the hybrid storage unit are provided. The electronic apparatus includes a hybrid storage unit. The hybrid storage unit includes a first storage unit and a second storage unit. The second storage unit includes a first storage area and a second storage area. If a relationship between the electronic apparatus and an external apparatus is detected as being an undocked relationship, the first storage unit is disabled by a controller of the hybrid storage unit, and the second storage area serves to simulate and replace the first storage unit. The controller reports a storage unit status change notification to an operating system, so as to allow the operating system to re-enumerate the hybrid storage unit.

Abstract: A semiconductor device includes a semiconductor substrate, at least a first fin structure, at least a second fin structure, a first gate, a second gate, a first source/drain region and a second source/drain region. The semiconductor substrate has at least a first active region to dispose the first fin structure and at least a second active region to dispose the second fin structure. The first/second fin structure partially overlapped by the first/second gate has a first/second stress, and the first stress and the second stress are different from each other. The first/second source/drain region is disposed in the first/second fin structure at two sides of the first/second gate.