Abstract: Semiconductor devices and methods of making thereof are provided. In one aspect, for example, a method for making a semiconductor device can include polishing a working surface of a diamond layer to a substantially flat surface, depositing a buffer layer on the working surface of the diamond layer, and depositing a semiconductor layer on the buffer layer. In one specific aspect, the c-axis of the buffer layer is oriented perpendicular to the working surface of the diamond layer.

Abstract: Thermally regulated semiconductor devices having reduced thermally induced defects are provided, including associated methods. Such a device can include a heat spreader having a monolayer of diamond particles within a thin metal matrix and a semiconductor material thermally coupled to the heat spreader. In one aspect, the coefficient of thermal expansion difference between the heat spreader and the semiconductor material is less than or equal to about 50%.

Abstract: Superabrasive tools and methods for making and using the same are provided. In one aspect, for example, a CMP pad dresser includes a first monolayer of superabrasive particles disposed on and coupled to one side of a metal support layer and a second monolayer of superabrasive particles disposed on and coupled to the metal support layer on an opposite side from the first monolayer. The superabrasive particles of the second monolayer are positioned to have substantially the same distribution as the superabrasive particles of the first monolayer.

Abstract: Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm/° C.

Abstract: LED devices incorporating diamond materials and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.

Abstract: Electrically insulating layers having increased thermal conductivity, as well as associated devices and methods are disclosed. In one aspect, for example, a printed circuit board is provided including a substrate and an electrically insulating layer coated on at least one surface of the substrate, the electrically insulating layer including a plurality of hBN particles bound in a binder material.

Abstract: Devices having light transmittant protective layers and methods associated with such layers are provided. In one aspect, for example, a device having a light transmittant protective layer can include a substrate having a transmittance of greater than or equal to about 85 for light having at least one wavelength from about 250 nm to about 800 nm, and a light transmittant protective layer coated on the substrate. The protective layer includes at least 50 wt % AlN and having a transmittance of greater than or equal to 80% for light having at least one wavelength from about 250 nm to about 800 nm.

Abstract: A CMP pad conditioner comprises a plurality of abrasive segments. Each abrasive segment includes a segment blank and an abrasive layer attached to the segment blank, the abrasive layer including a superhard abrasive material. A pad conditioner substrate is also provided. Each of the plurality of abrasive segments is permanently affixed to the pad conditioner substrate in an orientation that enables removal of material from a CMP pad by the abrasive layer as the pad conditioner and the CMP pad are moved relative to one another.

Abstract: CMP pad dressers having leveled tips and associated methods are provided. In one aspect, for example, a composite conditioner can include a base plate and a plurality of polishing units secured to a surface of the base plate by an adhesive layer, where each polishing unit includes a plurality of polishing tips secured in a binding layer. Additionally, a height difference between a first highest polishing tip and a second highest polishing tip is less than or equal to about 10 ?m, a height difference between the first highest polishing tip and a tenth highest polishing tip is less than or equal to about 20 ?m, and a height difference between the first highest polishing tip and a 100th highest polishing tip is less than or equal to about 40 ?m. Furthermore, the first highest polishing tip protrudes from the binding layer to a height of greater than or equal to about 50 ?m.

Abstract: CMP pad dressers having leveled tips and associated methods are provided. In one aspect, for example, a method can include pressing a CMP pad dresser against a CMP pad, where the dresser includes a monolayer of a plurality of superabrasive particles protruding from a matrix layer. The difference in protrusion distance between the highest protruding tip and the second highest protruding tip of the monolayer of superabrasive particles is less than or equal to about 10 microns and the difference in protrusion distance between the highest 10 protruding tips of the monolayer of superabrasive particles are within about 20 microns or less. The method can further include rotating the dresser against the CMP pad such that asperities are cut into the CMP pad having a maximum cutting depth of about 60 microns.

Abstract: Methods and systems for evaluating and/or increasing CMP pad dresser performance are provided. In one aspect, for example, a method of identifying overly-aggressive superabrasive particles in a CMP pad dresser can include positioning a CMP pad dresser having a plurality of superabrasive particles on an indicator substrate such that at least a portion of the plurality of superabrasive particles of the CMP pad dresser contact the indicator substrate, and moving the CMP pad dresser across the indicator substrate in a first direction such that the portion of the plurality of superabrasive particles create a first marking pattern on the substrate, wherein the first marking pattern identifies a plurality of working superabrasive particles from among the plurality of superabrasive particles.

Abstract: A cell module includes an anode, a cathode and a proton exchange membrane. The anode adheres to one side of the proton exchange membrane while the cathode adheres to the opposite side thereof. The anode comprises a substrate and at least one diamond-like carbon layer covering the substrate. The present disclosure further provides an ozone generator and a method using the same.

Abstract: A vertical light emitting diode (LED) is disclosed, which includes a conductive substrate; a conductive diamond-like carbon (DLC) layer located on the conductive substrate; a first passivation layer disposed on the conductive DLC layer and formed with a first opening; a first electrode located on the conductive DLC layer and in the first opening of the first passivation layer; a semiconductor epitaxial multilayer structure disposed on the first electrode; a second passivation layer disposed on the first passivation layer and covering the lateral surface of the semiconductor epitaxial multilayer structure, wherein a second opening is formed in the second passivation layer to expose the surface of the semiconductor epitaxial multilayer structure; and a second electrode located on the semiconductor epitaxial multilayer structure and in the second opening of the second passivation layer. A method for manufacturing the vertical LED mentioned above is also disclosed.

Abstract: The present invention provides CMP pad dressers and methods for dressing or conditioning CMP pads. In one aspect, a method for conditioning a CMP pad can include cutting the CMP pad with superabrasive cutting elements and controlling a degree of contact between the CMP pad and the cutting elements using control elements. The degree of contact is established through placement of the control elements relative to the cutting elements.

Abstract: CMP pad dressers with superabrasive particles oriented into an attitude that controls CMP pad performance, and methods associated therewith are disclosed and described. The controlled CMP pad performance may be selected to optimize CMP pad dressing rate and dresser wear.

Abstract: A CMP pad conditioner comprises a plurality of abrasive segments. Each abrasive segment includes a segment blank and an abrasive layer attached to the segment blank, the abrasive layer including a superhard abrasive material. A pad conditioner substrate is also provided. Each of the plurality of abrasive segments is permanently affixed to the pad conditioner substrate in an orientation that enables removal of material from a CMP pad by the abrasive layer as the pad conditioner and the CMP pad are moved relative to one another.

Abstract: Solar cells and related methods using thin layers of amorphous diamond. A thin layer of amorphous diamond is in electrical communication with a conductor. The use of a thin layer of amorphous diamond helps to reduce back conversion of excited electrons to heat. Reduced back conversion in turn can provide an increase in the efficiency of solar cells using the presently disclosed techniques.

Abstract: Superabrasive tools and methods for the making thereof are disclosed and described. In one aspect, superabrasive particles are chemically bonded to a matrix support material according to a predetermined pattern by a braze alloy. The brazing alloy may be provided as a powder, thin sheet, or sheet of amorphous alloy. A template having a plurality of apertures arranged in a predetermined pattern may be used to place the superabrasive particles on a given substrate or matrix support material.

Abstract: Superabrasive tools and methods for the making thereof are disclosed and described. In one aspect, superabrasive particles are chemically bonded to a matrix support material according to a predetermined pattern by a braze alloy. The brazing alloy may be provided as a powder, thin sheet, or sheet of amorphous alloy. A template having a plurality of apertures arranged in a predetermined pattern may be used to place the superabrasive particles on a given substrate or matrix support material.

Abstract: Thermally regulated semiconductor devices having reduced thermally induced defects are provided, including associated methods. Such a device can include a heat spreader having a monolayer of diamond particles within a thin metal matrix and a semiconductor material thermally coupled to the heat spreader. In one aspect, the coefficient of thermal expansion difference between the heat spreader and the semiconductor material is less than or equal to about 50%.