Abstract: A cutter holder has a body, a fastening bolt, and a vibration absorbing structure. The body has a specific weight. The fastening bolt is mounted inside the body. The vibration absorbing structure is mounted inside the body and has a sleeve, an elastic unit, a spacer, and a set nut. The sleeve is mounted around the fastening bolt and has a specific weight. The specific weight of the sleeve is larger than the specific weight of the body. The elastic unit is mounted around the fastening bolt and has two opposite ends. One of the ends of the elastic unit abuts against the sleeve. The spacer is mounted around the fastening bolt and abuts against the other end of the elastic unit. The set nut is screwed with the fastening bolt and abuts against the spacer.

Abstract: Some embodiments of the present disclosure relate to a high electron mobility transistor (HEMT) which includes a heterojunction structure arranged over a semiconductor substrate. The heterojunction structure includes a binary III/V semiconductor layer made of a first III-nitride material to act as a channel region of the e-HEMT, and a ternary III/V semiconductor layer arranged over the binary III/V semiconductor layer and made of a second III-nitride material to act as a barrier layer. Source and drain regions are arranged over the ternary III/V semiconductor layer and are spaced apart laterally from one another. A gate structure is arranged over the heterojunction structure and is arranged between the source and drain regions. The gate structure is made of a third III-nitride material. A first passivation layer is disposed about sidewalls of the gate structure and is made of a fourth III-nitride material.

Abstract: An embodiment of the invention shows a high-voltage MOS field-effect transistor connected in series with a Schottky diode. When the Schottky diode is forwardly biased, the high-voltage MOSFET can act as a switch and sustain a high drain-to-source voltage. When the Schottky diode is reversely biased, the Schottky diode can protect the integrate circuit where the high-voltage MOSFET is formed, because the integrate circuit might otherwise burn out due to an exceedingly-large reverse current.

Abstract: A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A dielectric passivation layer is disposed on the second III-V compound layer. A source feature and a drain feature are disposed on the second III-V compound layer, and extend through the dielectric passivation layer. A gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature. The gate electrode has an exterior surface. An oxygen containing region is embedded at least in the second III-V compound layer under the gate electrode. A gate dielectric layer has a first portion and a second portion. The first portion is under the gate electrode and on the oxygen containing region. The second portion is on a portion of the exterior surface of the gate electrode.

Abstract: A lighting structure includes a light source; a first lens; and a second lens. The second lens is located between the light source and the first lens. An angle between an optical axis of the first lens and an optical axis of the second lens is not more than 90 degrees. The light emitted from the light source which is not taken and refracted by the first lens is taken and refracted by the second lens.

Abstract: The present disclosure relates to a high electron mobility transistor compatible power lateral field-effect rectifier (L-FER) device. In some embodiments, the rectifier device has an electron supply layer located over a layer of semiconductor material at a position between an anode terminal and a cathode terminal. A layer of doped III-N semiconductor material is disposed over the electron supply layer. A passivation layer is located over the electron supply layer and the layer of doped III-N semiconductor material. A gate structure is disposed over the layer of doped III-N semiconductor material and the passivation layer. The layer of doped III-N semiconductor material modulates the threshold voltage of the rectifier device, while the passivation layer improves reliability of the L-FER device by mitigating current degradation due to high-temperature reverse bias (HTRB) stress.

Abstract: An apparatus, computer program, and method are provided for setting a power of a cell node based on cell node gradient information. Cell node gradient information is generated based on a multiple-codeword channel quality indicator (CQI), utilizing a multiple-input-multiple-output (MIMO)-capable cell node in a network configured for communicating with a plurality of MIMO-capable user equipment. Additionally, other cell node gradient information is received that is generated for a plurality of other MIMO-capable cell nodes. The generated cell node gradient information and the other cell node gradient information are processed. Further, a power of the MIMO-capable cell node is set, based on the processing.

Abstract: A semiconductor structure comprises a semiconductive substrate comprising a top surface, a III-V compound layer over the semiconductive substrate, and a first passivation layer over the III-V compound layer. The semiconductor structure also includes an etch stop layer over the first passivation layer. The semiconductor structure further includes a gate stack over the first passivation layer and surrounded by the etch stop layer.

Abstract: The present disclosure relates to a lens. The lens includes a bottom surface, a top surface, and a side surface. The top surface is opposite to the bottom surface. The center of the bottom surface is recessed towards the top surface to form a light incident groove. The top surface is recessed towards the bottom surface to form a light-emitting groove. The side surface is connected between the bottom surface and the top surface. The side surface defines a microstructure, and the side surface is fully covered by the microstructure.

Abstract: A High Electron Mobility Transistor (HEMT) includes a first III-V compound layer having a first band gap, and a second III-V compound layer having a second band gap over the first III-V compound layer. The second band gap is smaller than the first band gap. The HEMT further includes a third III-V compound layer having a third band gap over the second III-V compound layer, wherein the third band gap is greater than the first band gap. A gate electrode is formed over the third III-V compound layer. A source region and a drain region are over the third III-V compound layer and on opposite sides of the gate electrode.

Abstract: A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A dielectric passivation layer is disposed on the second III-V compound layer. A source feature and a drain feature are disposed on the second III-V compound layer, and extend through the dielectric passivation layer. A gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature. The gate electrode has an exterior surface. An oxygen containing region is embedded at least in the second III-V compound layer under the gate electrode. A gate dielectric layer has a first portion and a second portion. The first portion is under the gate electrode and on the oxygen containing region. The second portion is on a portion of the exterior surface of the gate electrode.

Abstract: An easily detachable collet has two opposite ends, a conjoint portion, a fastening cap abutting portion, an annular groove, a through hole, and multiple slits. The conjoint portion is arranged at one of the two opposite ends of the collet. The fastening cap abutting portion is annularly formed at the other end of the collet. The fastening cap abutting portion has a convex outline in cross section. The annular groove is formed between the conjoint portion and the fastening cap abutting portion. The through hole is axially defined through the collet. The multiple slits are radially defined in the collet and communicate with the through hole. Each slit extends to one of the two opposite ends of the collet. The fastening cap abutting portion with a convex outline in cross section enables the collet to be smoothly and easily detached from a fastening cap.

Abstract: A semiconductor device comprising a substrate, a channel layer over the substrate, an active layer over the channel layer and a laminate layer in contact with the active layer. The active layer has a band gap discontinuity with the channel layer.

Abstract: A vehicle headlamp structure free of reflective internal elements includes a lens and a light source. The lens includes a light emitting surface, a bottom surface, and a connecting surface. The light emitting surface is flat and the bottom surface includes at least one depression in the bottom surface to form at least one light incident structure. The at least one light incident structure includes a first light incident surface. The connecting surface is composed of a plurality of curved surfaces each with a different radius of curvature. The light source is substantially accommodated within the light incident structure and emits light through the first light incident surface to form an elliptical beam.

Abstract: A lighting structure includes a light source; a first lens; and a second lens. The second lens is located between the light source and the first lens. An angle between an optical axis of the first lens and an optical axis of the second lens is not more than 90 degrees. The light emitted from the light source which is not taken and refracted by the first lens is taken and refracted by the second lens.

Abstract: A cutter holder has a body, a fastening bolt, and a vibration absorbing structure. The body has a specific weight. The fastening bolt is mounted inside the body. The vibration absorbing structure is mounted inside the body and has a sleeve, an elastic unit, a spacer, and a set nut. The sleeve is mounted around the fastening bolt and has a specific weight. The specific weight of the sleeve is larger than the specific weight of the body. The elastic unit is mounted around the fastening bolt and has two opposite ends. One of the ends of the elastic unit abuts against the sleeve. The spacer is mounted around the fastening bolt and abuts against the other end of the elastic unit. The set nut is screwed with the fastening bolt and abuts against the spacer.

Abstract: The present disclosure relates to a lens. The lens includes a bottom surface, a top surface, and a side surface. The side surface is connected to the bottom surface and the top surface, and between the top surface and the bottom surface. The center of the bottom surface is recessed towards the top surface, and forms a groove. The top surface is recessed towards the bottom surface, and the top surface is concave. The groove includes a top incident surface and a side incident surface. The side incident surface is connected to the top incident surface and the bottom surface. Some micro-structures are set on the top incident surface and form a rough surface. Some reflective films are set on the side incident surface. The present disclosure also relates to a light-emitting device employing the lens.

Abstract: An optical lens for an LED includes an upper portion defining a light extraction face, a lower portion and an annular flange between the upper and lower portions. The lower portion has a wall section defining a cavity for receiving the LED therein, and a curved lateral side. A lateral light generated by the LED and running against the curved lateral side has at least a part being refracted or reflected thereby to run through the light extraction face of the optical lens.

Abstract: A projection lens on a vehicle headlight includes a light incident surface and a light emitting surface facing away from the light incident surface. The light emitting surface includes a diffusing surface and a rough surface. A number of strips protrude from the diffusing surface. The strips are parallel to each other and have curved cross sections, and are configured for diffusing the light passing through the diffusing surface. The rough surface is positioned above and connected to the diffusing surface to form a horizontal connecting line, thereby allowing the rough surface to scatter the light passing through the rough surface in all directions.

Abstract: A wireless communication system and related wireless devices are disclosed. The wireless communication system includes: a source wireless device configured to operably insert an auto-pairing request and one or more source Bluetooth device addresses into one or more predetermined advertising packets to form one or more target advertising packets, and configured to operably transmit the target advertising packets; and a destination wireless device configured to operably receive and parser the target advertising packets to extract the auto-pairing request and the one or more source Bluetooth device addresses. The destination wireless device performs an auto-pairing procedure with the source wireless device according to the auto-pairing request and the one or more source Bluetooth device addresses to establish a Bluetooth bond with the source wireless device.