Abstract: A semiconductor device includes: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region includes multiple alternating well layers and barrier layers, wherein each of the barrier layers has a band gap, the active region further includes an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region, wherein the electron blocking region includes a band gap, and the band gap of the electron blocking region is greater than the band gap of one of the barrier layers; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the electron blocking region; a confinement layer between the fi

Abstract: A method for assigning a plurality of channel of a storage device for stream data writing, a storage device and a storage medium are provided. The method includes: providing global available channel status data and stream suitable channel status data for one of a plurality of streams by a controller of the storage device for processing stream data writing for the plurality of streams; generating stream available channel status data for the one of the plurality of streams, based on the global available channel status data and the stream suitable channel status data for the stream; selecting at least one available channel of the plurality of channels according to the stream available channel status data; and updating the global available channel status data with respect to the at least one available channel selected and updating the stream suitable channel status data for one of the plurality of streams.

Abstract: A method for dynamically managing host read operation and read refresh operation in a storage device, a storage device and a storage medium thereof are provided. The method includes: controlling, by a controller of the storage device, a ratio of the number of host read operation to the number of read refresh operation in the storage device to be in line with a first value and obtaining a total read request count which accumulates in the storage device; when a criterion for updating the ratio is satisfied, determining, by the controller, a second value for the ratio of the number of host read operation to the number of read refresh operation according to the total read request count and information of blocks to be refreshed in the storage device; and controlling, by the controller, the number of host read operation and the number of read refresh operation so that a ratio of the number of host read operation to the number of read refresh operation is in line with the second value.

Abstract: A transparent plastic integrally molded goblet has a cup-shaped part, a columnar first leg and a disc-shaped first base integrally molded from transparent plastics. The bottom edge of the cup-shaped part extends downwards to form the first leg. The bottom end of the first leg integrally forms the first base. The cup-shaped part has a circumferential wall which encloses the circumference of a first space. The top edge of the circumferential wall forms an annular first ring frame, and the central part of bottom edge of the first base downwards forms a first convex pin. The integral molding of transparent plastics can enhance the appearance integrity of the goblet, the manufacture of the goblet is easy and the product yield is increased.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a first source/drain region, a second source/drain region, first source/drain contact and a first dielectric spacer liner. The gate structure is over the semiconductor substrate. The first source/drain region and the second source/drain region are in the semiconductor substrate and respectively on opposite sides of the gate structure. The first source/drain contact is over the first source/drain region. The first dielectric spacer liner lines a sidewall of the first source/drain contact and extends into the first source/drain region.

Abstract: The present disclosure provides a method for manufacturing a semiconductor structure, including patterning a photo-sensitive polymer layer with a plurality of trenches by a first mask, the first mask having a first line pitch, patterning a photoresist positioning on a mesa between adjacent trenches by a second mask, the second mask having a second line pitch, the first mask and the second mask having substantially identical pattern topography, and the second line pitch being greater than the first line pitch, and selectively plating conductive material in the plurality of trenches.

Abstract: Disclosed herein are oligomeric compounds such as antisense oligonucleotides, siRNA and shRNAs and compositions for knocking down human RACK1, and methods for treating a TDP43-opathy or a FUS-opathy neurodegenerative disease optionally selected from amyotrophic lateral sclerosis (ALS), Alzheimer's disease (AD), frontotemporal lobar dementia (FTLD), Huntington's disease (HD), neuronal intermediate filament inclusion disease (NIFID), basophilic inclusion body disease (BIBD) or limbic-predominant age-related TDP-43 encephalopathy (LATE) in a subject in need thereof or for reducing TDP-43 and/or FUS aggregation in a cell, the methods comprising administering to the subject in need thereof or introducing into the cell one or more antisense molecule(s) targeting RACK1, optionally one or more oligomeric compound disclosed herein.

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer having a band gap greater than the band gap of one of the first barrier layers; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and a second aluminum-conta

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate, an active region in the substrate, a recessed region in the active region, a gate dielectric layer on the recessed region, a gate structure on the gate dielectric layer, and a source/drain region in the active region and at a side of the gate structure. An edge portion of the gate dielectric layer comprises a rounded profile, and the source/drain region directly contacts the edge portion of the gate dielectric layer.

Abstract: A light guide plate includes a main body, stripe structures, and light-adjusting structures. The main body includes a light-incident surface and an optical surface. The stripe structures are disposed on the optical surface. The light-adjusting structures are disposed between two adjacent stripe structures. Each of the light-adjusting structures includes a first light active surface and a second light active surface. The first light active surface faces towards the light-incident surface. The second light active surface faces towards an opposite light-incident surface. The first light active surface and the second light active surface are inclined towards different directions and formed a non-symmetrical shape. A first included angle is formed between the first light active surface and the optical surface. A second included angle is formed between the second light active surface and the optical surface. The first included angle and the second included angle are acute angles.

Abstract: A terminal, a storage medium, and a database synchronization method thereof are disclosed. The database synchronization method includes reading data from a first database and capturing a dynamic data log in the first database; joining data to a waiting queue read from the first database; determining a dislocation category of the data in the waiting queue, and rearranging the dislocation data in the waiting queue into a first category according to the dynamic data log; and synchronizing the rearranged data to a second database. According to the database synchronization method provided by the present invention caches the data read from the first database to the waiting queue, and dislocation data in the waiting queue is rearranged and then synchronized to the second database, so that a problem of poor data identity after database synchronization is avoided.

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: A retiming circuit module, a signal transmission system and a signal transmission method are disclosed. The retiming circuit module includes a path control circuit and a multipath signal transmission circuit. The multipath signal transmission circuit includes a plurality of parallel signal transmission paths. The path control circuit is configured to control the multipath signal transmission circuit to perform signal transmission between an upstream device and a downstream device based on a first parallel signal transmission path in the parallel signal transmission paths during a period of a handshake operation performed between the upstream device and the downstream device. The path control circuit is further configured to control the multipath signal transmission circuit to perform the signal transmission based on a second parallel signal transmission path in the parallel signal transmission paths after the handshake operation is finished.

Abstract: An image sensor includes a first photodiode and a second photodiode. The image sensor further includes a first color filter over the first photodiode; and a second color filter over the second photodiode. The image sensor further includes a first microlens over the first color filter and a second microlens over the second color filter. The image sensor further includes a first electro-optical (EO) film between the first color filter and the first microlens, wherein a material of the first EO film is configured to change refractive index in response to application of an electrical field. The image sensor further includes a second EO film between the second color filter and the second microlens, wherein a material of the second EO film is configured to change refractive index in response to application of an electrical field.

Abstract: A method for recovering lithium is provided. The method includes the following steps. A lithium-containing solution is provided. A manganese oxide adsorbent is immersed in the lithium-containing solution, and a reducing agent is added to carry out an adsorption reaction, and the manganese oxide adsorbent is immersed in a solution containing an oxidizing agent to carry out a desorption reaction.

Abstract: A light guide plate includes a main body, stripe structures, and light-adjusting structures. The main body includes a light-incident surface and an optical surface. The stripe structures are disposed on the optical surface. The light-adjusting structures are disposed between two adjacent stripe structures. Each of the light-adjusting structures includes a first light active surface and a second light active surface. The first light active surface faces towards the light-incident surface. The second light active surface faces towards an opposite light-incident surface. The first light active surface and the second light active surface are inclined towards different directions and formed a non-symmetrical shape. A first included angle is formed between the first light active surface and the optical surface. A second included angle is formed between the second light active surface and the optical surface. The first included angle and the second included angle are acute angles.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. The substrate has a plurality of protrusions disposed along a first side of the substrate over the image sensing element and a ridge disposed along the first side of the substrate. The ridge continuously extends around the plurality of protrusions.

Abstract: The present invention provides a lens driving device, a camera, and an electronic apparatus with a small size, a large correction angle and an excellent hand vibration correction effect. The lens driving device includes a case having an accommodation space, which accommodates a lens module; support frames, support members, and an electromagnetic driving device, for freely rotating the lens module in a direction orthogonal to an optical axis direction; and a base for fixing a circuit board; the electromagnetic driving device is arranged at the support frames and at the base for fixing the circuit board, and is arranged adjacent to a level of a center of gravity of the lens module; and the support frames includes a first support frame and a second support frame, each of the first support frame and the second support frame has different movement axes in a plane and is rotatable freely relative to the base for fixing the circuit board.

Abstract: The memory system comprises nonvolatile memory devices each including plural superblocks and a controller. The controller is configured to select a victim superblock including a smaller number of valid pages than any among remaining superblocks, exchange a greater-valid-pages block with a smaller-valid-pages block, and control the memory device to perform a garbage collection operation on the victim superblock, wherein the greater-valid-pages block is included in the victim superblock and the smaller-valid-pages block is included in one among the remaining superblocks, and wherein the smaller-valid-pages block has a smaller number of valid pages than the greater-valid-pages block.

Abstract: The disclosure relates to an LED chip, an LED array and an LED packaging method. By adding a reflecting layer on the periphery of the LED, the reflecting layer adjusts the emission direction of light emitted by a light-emitting layer of the LED, so that the adjusted emission direction is more concentrated to a certain required illumination direction, and the light emitted by the light-emitting layer is prevented from irradiating adjacent LEDs and thereby causing interference to the adjacent LEDs. Therefore, according to the method provided by the disclosure, the light field directivity of the emitted light beam is improved, the embodiment is easy to operate with convenient implementation and improved LED performance, providing convenience for a user to use an LED lamp.