Abstract: An integrated circuit includes a first transistor and a second transistor. The first transistor includes first semiconductor channel layers, first gate structure, and a first source structure and a first drain structure on opposites sides of the first gate structure. The second transistor includes second semiconductor channel layers, second gate structure, and a second source structure and a second drain structure on opposites sides of the second gate structure. The first source structure of the first transistor is electrically coupled to the second drain structure of the second transistor. A thickness of each of the first semiconductor channel layers is less than a thickness of each of the second semiconductor channel layers, and a bandgap of a material of the first semiconductor channel layers is larger than a bandgap of a material of the second semiconductor channel layers.

Abstract: An integrated circuit includes a first transistor and a second transistor. The first transistor includes first semiconductor channel layers, first gate structure, and a first source structure and a first drain structure on opposites sides of the first gate structure. The second transistor includes second semiconductor channel layers, second gate structure, and a second source structure and a second drain structure on opposites sides of the second gate structure. The first source structure of the first transistor is electrically coupled to the second drain structure of the second transistor. A thickness of each of the first semiconductor channel layers is less than a thickness of each of the second semiconductor channel layers, and a bandgap of a material of the first semiconductor channel layers is larger than a bandgap of a material of the second semiconductor channel layers.

Abstract: A display device includes a display region and a periphery region surrounding the display region. The display device includes an driving circuit substrate, a TFT array substrate, a front plane laminate, and multiple conductive wires. The driving circuit substrate includes multiple first conductive pads. The TFT array substrate includes multiple second conductive pads. The TFT array substrate is located on the driving circuit substrate. The TFT array substrate is located between the driving circuit substrate and the front plane laminate. The conductive wires are electrically connected with the first conductive pads and the second conductive pads, respectively. The first conductive pads and the second conductive pads are located in the periphery region.

Abstract: A cabinet for mounting server to rack includes a chassis, a handle, a lever, and a linkage. The rack includes a support. The support comprises a first limiting surface and a second limiting surface. An axis of the lever is perpendicular to an axis of the handle, the lever comprises a first limiting part and a second limiting part. When the handle rotates, the linkage drives the lever rotate, the first limiting part pushes the first limiting surface to push the chassis out of the rack, or the second limiting part pushes the second limiting surface to push the chassis into the rack. A server system using the cabinet is also disclosed.

Abstract: A display device including a display panel and a driving circuit is provided. The display panel is configured to display an image frame. The driving circuit is coupled to the display panel. The driving circuit is configured to output a gate signal to drive the display panel to display the image frame during a driving period. The driving period includes a first period, a second period, and a third period. The gate signal has a first voltage level during the first period and a second voltage level during the second period. The second voltage level is greater than the first voltage level.

Abstract: A display apparatus includes a wireless transmission unit and a display panel. The display panel includes a substrate, a plurality of pixel units and a signal line. The substrate includes a display region and a periphery region. The periphery region surrounds the display region. The pixel units are disposed on the display region. Each of the pixel units includes an active device and a pixel electrode. The active device is electrically connected to the pixel electrode. The signal line is on the periphery region. As viewed from a top view, the signal line has an annular shape having a gap and surrounds the display region.

Abstract: A circuit driving substrate, display panel and a display driving method are provided. The circuit driving substrate includes a pixel array, a first switching circuit, a second switching circuit, a first driving circuit and a second driving circuit. The first switching circuit is coupled to the pixel array through a plurality of gate lines, and receives a first switching signal. The second switching circuit is coupled to the pixel array through the gate lines, and receives a second switching signal. The first driving circuit is coupled to the first switching circuit and configured to output the first voltage signal to the first switching circuit. The second driving circuit is coupled to the second switching circuit and configured to output a second voltage signal to the second switching circuit. The first switching circuit and the second switching circuit selectively provide the first voltage signal or the second voltage signal.

Abstract: A semiconductor device structure, along with methods of forming such, are described. In one embodiment, a semiconductor device structure is provided. The semiconductor device structure includes a substrate having a front side and a back side opposing the front side, a gate stack disposed on the front side of the substrate, and a first source/drain feature and a second source/drain feature disposed in opposing sides of the gate stack. Each first source/drain feature and second source/drain feature comprises a first side and a second side, and a portion of the back side of the substrate is exposed to an air gap.

Abstract: The present invention relates to a scalable process for the purification of human cytomegalovirus particles from cell culture medium. In particular, the process involves a two step chromatography process starting with an anion exchange chromatography step followed by a polishing chromatography step selected from mixed mode chromatography or cation exchange chromatography.

Abstract: A chassis for holding electronic devices includes a main body, a guiding component, and a latching component. The main body defines a storage cavity with an upper layer and a lower layer, the upper layer can hold an electronic device, and the lower layer can hold another electronic device. The electronic devices can slide along the guiding component into or out of the storage cavity. The latching component have an upper handle and a lower handle, the upper handle can latch or unlatch the electronic device in the upper layer, and the lower handle can latch or unlatch the electronic device in the lower layer. An avoiding space is defined between the upper handle and the lower handle, the avoiding space is configured for providing a space to rotate the lower handle, so the lower handle never contacts the upper handle. An electronic host using the chassis is also disclosed.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members vertically stacked above a substrate, a gate structure engaging the channel members, a gate sidewall spacer disposed on a sidewall of the gate structure, an epitaxial feature abutting end portions of the channel members, and inner spacers interposing the gate structure and the epitaxial feature. The end portion of at least one of the channel members includes a first dopant. A concentration of the first dopant in the end portion of the at least one of the channel members is higher than in a center portion of the at least one of the channel members. The concentration of the first dopant in the end portion of the at least one of the channel members is higher than in an outer portion of the epitaxial feature.

Abstract: A method for generating images with high dynamic range (HDR) based on multiple images captured at different aperture values, under different conditions, or at different shutter speeds is applied in a device. The method inputs the original multiple images into a predetermined model and aligns the multiple images. The method further confirms object images that need to be attended among multiple aligned images and obtains a merge weighting for each of the object images, and merges the images for a generated HDR according to the merge weighting of each image. The device utilizing the method is also disclosed.

Abstract: Embodiments of the present disclosure provide a semiconductor device structure including a first channel layer formed of a first material, wherein the first channel layer has a first width, a second channel layer formed of a second material different from the first material, wherein the second channel layer has a second width less than the first width, and the second channel layer is in contact with a first surface of the first channel layer. The structure also includes a third channel layer formed of the second material, wherein the third channel layer has a third width less than the second width, and the third channel layer is in contact with a second surface of the first channel layer. The structure also includes a gate dielectric layer conformally disposed on the first channel layer, the second channel layer, and the third channel layer, and a gate electrode layer disposed on the gate dielectric layer.

Abstract: A method is provided for building a model to determine breast lesions in a subject. The method involves sequential process of image processing, segmentation, object detection, and masking on obtained mammographic images to obtain local images and extracted feature information of breast lesions. Following this, classification and training are conducted using the local images and feature information to establish the model. Also provided herein is a method for diagnosing and treating breast cancer with the aid of the model.

Abstract: An interconnect structure includes a first dielectric layer, a first metal layer, a metal via, and a second metal layer. The first dielectric layer is over a substrate. The first metal layer is over the first dielectric layer and has a first segment and a second segment separated from the first segment. The metal via includes a first portion between the first and second segments of the first metal layer, and a second portion above the first metal layer. The second metal layer is over the metal via. From a top view, the second metal layer includes a metal line extending across the first and second segments of the first metal layer. From a cross-sectional view, the first portion of the metal via has opposite sidewalls respectively offset from opposite sidewalls of the second portion of the metal via.

Abstract: A hybrid mode control method includes steps of: controlling an LLC resonant converter to operate in a burst mode when the LLC resonant converter is in a light load. Afterward, controlling the LLC resonant converter operating in a PWM mode as a load of the LLC resonant converter increases or an output voltage increases in a charging control, or controlling the LLC resonant converter operating in a PFM mode as the load increases or the input voltage decreases in a discharging control. Afterward, controlling the LLC resonant converter to operate in the PFM mode as the load of the LLC resonant converter further increases or the output voltage further increases in the charging control, or controlling the LLC resonant converter operating in a PSM mode as the load further increases or the input voltage further decreases in the discharging control.

Abstract: A semiconductor device includes semiconductor channel members disposed over a substrate, a gate dielectric layer disposed on and wrapping around the semiconductor channel members, a gate electrode layer disposed on the gate dielectric layer and wrapping around the semiconductor channel members, a source/drain (S/D) epitaxial layer in physical contact with the semiconductor channel members, and a dielectric spacer interposing the S/D epitaxial layer and the gate dielectric layer. The dielectric spacer includes a first dielectric layer in physical contact with the gate dielectric layer and a second dielectric layer in physical contact with the first dielectric layer. The first dielectric layer has a dielectric constant higher than that of the second dielectric layer. The second dielectric layer separates the first dielectric layer from physically contacting the S/D epitaxial layer.

Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.

Abstract: A system and a method for workplace safety management are provided. The method includes: dividing a work field corresponding to the workplace into work zones; assigning an environmental indicator to each of the work zones according to environmental data of the workplace; generating AR warning image signals according to the work zones and the environmental indicator; transmitting the AR warning image signals respectively to wearable electronic devices located in the workplace; and each of the wearable electronic devices displaying an AR warning image according to the received AR warning image signal.

Abstract: An amplifier circuit includes an input terminal, configured to receive an input voltage; an output terminal, configured to output an output voltage; a multi-stage operational amplifier, coupled to the input terminal and the output terminal, and configured to amplify the input voltage to the output voltage, comprising a plurality of amplifiers; and a plurality of level-shifting networks, each coupled between two of the plurality of amplifiers, configured to reduce a gain error of each output of the plurality of amplifiers; and a feedback capacitor, coupled between the input terminal and the output terminal.