Abstract: A packaging substrate is disclosed, which includes: a dielectric layer; a circuit layer embedded in and exposed from a surface of the dielectric layer, wherein the circuit layer has a plurality of conductive pads; and a plurality of conductive bumps formed on the conductive pads and protruding above the surface of the dielectric layer. As such, when an electronic element is disposed on the conductive pads through a plurality of conductive elements, the conductive elements can come into contact with both top and side surfaces of the conductive bumps so as to increase the contact area between the conductive elements and the conductive pads, thereby strengthening the bonding between the conductive elements and the conductive pads and preventing delamination of the conductive elements from the conductive pads.

Abstract: A fabrication method of a packaging substrate includes: providing a metal board having a first surface and a second surface opposite to the first surface, wherein the first surface has a plurality of first openings for defining a first core circuit layer therebetween, the second surface has a plurality of second openings for defining a second core circuit layer therebetween, each of the first and second openings has a wide outer portion and a narrow inner portion, and the inner portion of each of the second openings is in communication with the inner portion of a corresponding one of the first openings; forming a first encapsulant in the first openings; forming a second encapsulant in the second openings; and forming a surface circuit layer on the first encapsulant and the first core circuit layer.

Abstract: A method for fabricating a POP structure is disclosed. First, a first package is provided, which has: a dielectric layer; a stacked circuit layer embedded in the dielectric layer and exposed from upper and lower surfaces of the dielectric layer; a plurality of conductive posts and a semiconductor chip disposed on the upper surface of the dielectric layer and electrically connected to the stacked circuit layer; and an encapsulant formed on upper surface of the dielectric layer for encapsulating the semiconductor chip and the conductive posts and having a plurality of openings for exposing top ends of the conductive posts. Then, a second package is disposed on the encapsulant and electrically connected to the conductive posts. The formation of the conductive posts facilitates to reduce the depth of the openings of the encapsulant, thereby reducing the fabrication time and increasing the production efficiency and yield.

Abstract: A photodiode, a light sensor and a fabricating method thereof are disclosed. An n-type semiconductor layer and an intrinsic semiconductor layer of the photodiode respectively comprise n-type amorphous indium gallium zinc oxide (IGZO) and intrinsic IGZO. The oxygen content of the intrinsic amorphous IGZO is greater than the oxygen content of the n-type amorphous IGZO. A light sensor comprise the photodiode is also disclosed.

Abstract: A manufacturing method for a flexible display apparatus is provided. A rigid substrate is provided. A flexible substrate having a supporting portion and a cutting portion surrounding the supporting portion is provided. A first adhesive material is formed between the rigid substrate and the cutting portion of the flexible substrate, so that the flexible substrate is adhered onto the rigid substrate by the first adhesive material. The first adhesive material does not locate on the supporting portion of the flexible substrate. At least a display unit is formed on the supporting portion of the flexible substrate. The supporting portion and the cutting portion of the flexible substrate are separated so as to separate the rigid substrate and the flexible substrate, wherein the flexible substrate and the display unit thereon form a flexible display apparatus. In the method, the flexible substrate and the rigid substrate can be easily separated.

Abstract: A semiconductor structure includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stacked layer. The oxide channel layer is stacked over the gate, with the gate insulting layer disposed therebetween. The source and the drain are disposed on a side of the oxide channel layer and in parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stacked layer is disposed on the substrate and includes plural of first inorganic dielectric layers with a first refraction index and plural of second inorganic dielectric layers with a second refraction index that are stacked alternately. At least one of the first inorganic dielectric layers directly covers the source, the drain and the portion of the oxide channel layer. The first refraction index is smaller than the second refraction index.

Abstract: Disclosed herein is a thin film transistor array substrate. The thin film transistor array substrate includes a display area and a non-display area. The non-display area includes a signal line, a connecting line and a metal contact. The connecting line is formed in a first patterned metal layer. The signal line and the metal contact are formed in a second patterned metal layer. The connecting line is connected to the signal line by a first through-hole, and the connecting line is connected to the metal contact by a second through-hole. Furthermore, a method of fabricating the thin film transistor array substrate is also disclosed.

Abstract: A color filter suitable for being disposed on a substrate is provided. The color filter includes a plurality of pixel units separately disposed on the substrate so as to define a plurality of blank regions thereon. A color display apparatus applying the color filter is also provided, wherein the color display apparatus includes a driving circuit substrate, the color filter and a display medium layer. The color filter is disposed on the driving circuit substrate. The display medium layer is disposed between the driving circuit substrate and the color filter.

Abstract: A court border module using a display apparatus is disclosed, which uses piezoelectric elements to drive the display apparatus. When a ball hits a court border, which is defined by the display apparatus, a force is applied to the piezoelectric elements which then generate power to drive the corresponding part of the display apparatus. The color of the part of the display apparatus hit by the ball is switched. Therefore the change in the color of the court border can be observed by officials and others to instantly and objectively determine whether the ball has hit the court border.

Abstract: A fabrication method of a packaging substrate includes: providing a metal board having a first surface and a second surface opposite to the first surface, wherein the first surface has a plurality of first openings for defining a first core circuit layer therebetween, the second surface has a plurality of second openings for defining a second core circuit layer therebetween, each of the first and second openings has a wide outer portion and a narrow inner portion, and the inner portion of each of the second openings is in communication with the inner portion of a corresponding one of the first openings; a first encapsulant in the first openings; a second encapsulant in the second openings; and forming a surface circuit layer on the first encapsulant and the first core circuit layer.

Abstract: A fabrication method of a semiconductor package is provided, which includes the steps of: forming a packaging substrate on a first carrier; bonding a second carrier to the packaging substrate; removing the first carrier; disposing a chip on the packaging substrate; forming an encapsulant on the packaging substrate for encapsulating the chip; and removing the second carrier. The first and second carriers provide the thin-type packaging substrate with sufficient rigidity for undergoing the fabrication processes without cracking or warpage, thereby meeting the miniaturization requirement and improving the product yield.

Abstract: A color electronic paper apparatus includes a display layer, a color resist layer, an anti-ultraviolet layer and a protective sheet. The color resist layer is disposed on the display layer. The anti-ultraviolet layer is disposed on the color resist layer. The protective sheet is disposed on the anti-ultraviolet layer. A manufacturing method of the color electronic paper apparatus and a color electronic paper display are provided herein.

Abstract: A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector.

Abstract: A method for manufacturing a color electrophoretic display device includes the following steps. First, a substrate having a displaying region and a circuit region around the displaying region is provided. Next, a driving array is formed in the displaying region. Subsequently, an electrophoretic display layer is formed on the driving array. Afterwards, a thermal transfer process is performed so that a color filter layer is formed on the electrophoretic display layer. The method can increase the production eligibility rate of the color electrophoretic display device, thereby improving the display quality of the color electrophoretic display device.

Abstract: A packaging substrate and a semiconductor package each include: a metal board having a first surface and a second surface opposite to the first surface, wherein the first surface has a plurality of first openings for defining a first core circuit layer therebetween, the second surface has a plurality of second openings for defining a second core circuit layer therebetween, each of the first and second openings has a wide outer portion and a narrow inner portion, and the inner portion of each of the second openings is in communication with the inner portion of a corresponding one of the first openings; a first encapsulant formed in the first openings; a second encapsulant formed in the second openings; and a surface circuit layer formed on the first encapsulant and the first core circuit layer.

Abstract: A fabrication method of a semiconductor package is provided, which includes the steps of: forming a packaging substrate on a first carrier; bonding a second carrier to the packaging substrate; removing the first carrier; disposing a chip on the packaging substrate; forming an encapsulant on the packaging substrate for encapsulating the chip; and removing the second carrier. The first and second carriers provide the thin-type packaging substrate with sufficient rigidity for undergoing the fabrication processes without cracking or warpage, thereby meeting the miniaturization requirement and improving the product yield.

Abstract: A display panel is provided. The display panel comprises a first substrate, a second substrate, a display control circuit and a force sensing circuit. The display control circuit is disposed on the first substrate between the first substrate and the second substrate for controlling the display panel to display an image through the second substrate. The force sensing circuit is disposed side by side with the display control circuit on the first substrate between the first substrate and second substrate, wherein the force sensing circuit comprises a plurality of force sensing elements for sensing at least one external force and correspondingly generate a plurality of force signals respectively to transform at least one touch signal corresponding to the at least one external force.

Abstract: A color electronic paper device and manufacturing method thereof are provided. The device includes: a front panel; a color filter layer, placed over the front panel; a color protection layer, being a thermoplastic transparent layer placed over the color filter layer; an adhesive layer, placed over the color protection layer; and a cover, placed over the adhesive layer.

Abstract: A method for manufacturing oxide thin film transistors includes steps of: forming a gate, a drain electrode, a source electrode, and an oxide semiconductor layer respectively. The oxide semiconductor layer is formed on the gate electrode; the drain electrode and the source electrode are formed at two opposite sides of the oxide semiconductor layer. The method further includes a step of depositing a dielectric layer of silicon oxide, and a reacting gas for depositing the silicon oxide includes silane and nitrous oxide. A flow rate of nitrous oxide is in a range from 10 to 200 standard cubic centimeters per minute (SCCM). Oxide thin film transistors manufactured by above method has advantages of low leakage, high mobility, and other integrated circuit member can be directly formed on the thin film transistor array substrate of a display device.

Abstract: A method for manufacturing a color display provides a bottom substrate, injects a liquid display media onto the bottom substrate, and disposes a sealing substrate on the liquid display media, such that the liquid display media is contained between the sealing substrate and the bottom substrate. The method also aligns an image device corresponding to the bottom substrate and transfers a color coating onto the sealing substrate by a laser device through a laser thermal transfer process to form a color filter layer on the sealing substrate.