Abstract: A semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a plurality of drain regions in a substrate; a plurality of capacitor plugs on the plurality of drain regions; a plurality of lower electrodes on the plurality of capacitor plugs and respectively including a U-shaped cross-sectional profile; a lower supporting layer above the substrate, against on outer surfaces of the plurality of lower electrodes, and including: a plurality of first openings along the lower supporting layer and between the plurality of lower electrodes; and a higher supporting layer above the lower supporting layer, against on the outer surfaces of the plurality of lower electrodes, and including a plurality of second openings along the higher supporting layer and topographically aligned with the plurality of first openings. The widths of the first openings and the widths of the second openings are substantially the same.

Abstract: The present disclosure relates to devices, apparatus and methods of improving the accuracy of image-based assay, that uses imaging system having uncertainties or deviations (imperfection) compared with an ideal imaging system. One aspect of the present invention is to add the monitoring marks on the sample holder, with at least one of their geometric and/optical properties of the monitoring marks under predetermined and known, and taking images of the sample with the monitoring marks, and train a machine learning model using the images with the monitoring mark.

Abstract: An intravascular access system for facilitation of intraluminal medical procedures within the neurovasculature through an access sheath. The system includes an aspiration or support catheter having a flexible, distal luminal portion having an inner diameter defining a lumen extending between a proximal opening at a proximal end of the luminal portion and a distal opening at a distal end of the luminal portion. The catheter has a rigid spine coupled to at least the proximal end of the luminal portion and extending proximally therefrom. The system includes a dilator having a flexible, distal dilator portion sized to be received within the lumen of the luminal portion. Associated systems, devices, and methods of use are also described.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device comprises a substrate and a wafer disposed on the substrate. The wafer includes a p-doped layer disposed on the substrate; a first diode disposed on the p-doped layer; a second diode disposed on the p-doped layer; a third diode disposed on the p-doped layer; and a dielectric layer disposed on the substrate and covering the first, second, and third diodes. The first, second, and third diodes are disposed side by side.

Abstract: The present invention relates to a method of image fusion, which uses the brightness difference of the current frame and the previous frame to determine whether the pixel in a frame image is static or dynamic. If the current pixel is static, the previous corresponding pixel is superimposed onto the current pixel; if the current pixel is dynamic, the previous corresponding pixel is replaced with the current pixel.

Abstract: Systems and methods for adaptive voltage regulation are described. According to an example, a method for operating a charger may include setting, by a charger controller of the charger, a maximum regulation voltage threshold and a minimum regulation voltage threshold, the minimum regulation voltage threshold being a predetermined percentage of the maximum regulation voltage threshold, the predetermined percentage ranging from between about 90% and about 98%; setting, by the charger controller, a charger regulation voltage to the maximum regulation voltage threshold; determining, by a battery monitor, a state of charge of a battery module; and operating the charger at the maximum regulation voltage threshold until the battery module is maximally charged.

Abstract: An adaptive grid generating method includes obtaining a first three-dimensional grid of a target structure; importing the first three-dimensional grid into a computer-aided engineering software to obtain a first two-dimensional planar grid; importing the first two-dimensional planar grid into a grid cleaning software to obtain a second two-dimensional planar grid; and importing the second two-dimensional planar grid into the computer-aided engineering software to obtain a second three-dimensional grid.

Abstract: In one implementation, a method includes receiving a warped image representing simulated reality (SR) content (e.g., to be displayed in a display space), the warped image having a plurality of pixels at respective locations uniformly spaced in a grid pattern in a warped space, wherein the plurality of pixels are respectively associated with a plurality of respective pixel values and a plurality of respective scaling factors indicating a plurality of respective resolutions at a plurality of respective locations of the SR content (e.g., in the display space). The method includes processing the warped image in the warped space based on the plurality of respective scaling factors to generate a processed warped image and transmitting the processed warped image.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device comprises a silicide layer over a substrate, a metal plug in an opening defined by a dielectric layer over the substrate, a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer, a second metal layer over the first metal layer, and an amorphous layer between the first metal layer and the second metal layer.

Abstract: A bonding tool includes a gas supply line that may extend directly between valves associated with one or more gas supply tanks and a processing chamber such that gas supply line is uninterrupted without any intervening valves or other types of structures that might otherwise cause a pressure buildup in the gas supply line between the processing chamber and the valves associated with the one or more gas supply tanks. The pressure in the gas supply line may be maintained at or near the pressure in the processing chamber so that gas provided to the processing chamber through the gas supply line does not cause a pressure imbalance in the processing chamber, which might otherwise cause early or premature contact between semiconductor substrates that are to be bonded in the processing chamber.

Abstract: Disclosed is a system and method for communication using an efficient fiber-to-chip grating coupler with a high coupling efficiency.

Abstract: A first serial management interface device includes one or more input/output pins and a controller coupled to the one or more input/output pins. The controller receives a first frame from a second serial management interface device via a first input/output pin and generates a first error code based on the first frame received from the second serial management interface device. The controller receives a second frame from the second serial management interface device via a second input/output pin subsequent to receiving the first frame. The second frame includes a second error code. The controller compares the first error code to the second error code to determine whether first error code and the second error code match.

Abstract: Apparatuses and techniques are described for reducing the number of latches used in sense circuits for a memory device. The number of internal user data latches in a sense circuit is reduced by using an external data transfer latch to store a bit of user data, in place of an internal user data latch. The user data in the data transfer latches identifies a subset of the data states which are not prohibited from having a verify test. The subset is shifted as the program operation proceeds, at specified program loops, to encompass higher data states. The completion of programming by a memory cell is indicated by the user data latches and another internal latch of the sense circuit in place of the external data transfer latch.

Abstract: A multi-mode illumination system, including: a first illumination module; a second illumination module; and a third illumination module, as disclosed herein.

Abstract: The disclosure features a system that includes a plurality of material tanks, each of which includes at least one material for forming a chemical composition and includes a first recirculation loop; at least one mixing tank in which the materials from the material tanks are mixed to form a chemical composition, the mixing tank including a second recirculation loop; and at least one holding tank configured to continuously receive the chemical composition from the mixing tank, the holding tank including a third recirculation loop. The system may further include a plurality of fluid flow controller units and be configured to form material and chemical composition flows in an in-process steady state.

Abstract: A transmission interface between at least a first module and a second module is proposed. The transmission interface includes at least two physical transmission mediums. Each physical transmission medium is arranged to carry a multiplexed signal in which at least two signals are integrated. The at least two physical transmission mediums include a first physical transmission medium arranged to carry a first multiplexed signal including a first IF signal and a reference clock signal. The first IF signal and the reference clock signal are at different frequencies.

Abstract: A semiconductor device including a substrate, a low-k dielectric layer, a cap layer, and a conductive layer is provided. The low-k dielectric layer is disposed over the substrate. The cap layer is disposed on the low-k dielectric layer, wherein a carbon atom content of the cap layer is greater than a carbon atom content of the low-k dielectric layer. The conductive layer is disposed in the cap layer and the low-k dielectric layer.

Abstract: Described are methods and devices that can accelerate the process and quantify the parameters for bio/chemical material samples. In some embodiments, a QMAX (Q: quantification; M: magnifying; A: adding reagents; X: acceleration) device having two or more electrodes capable of accelerating the electrical measurement process of the samples. In addition, the electrical measurement technology of the QMAX device enables for extraction, separation, and purification of sample components, such as but not limited to nucleic acids. In some embodiments, the QMAX device includes a plate for hosting a small sensing chip to facilitate a bio/chemical sensing of the sensing chip.

Abstract: A structure includes a first conductive feature, a first etch stop layer over the first conductive feature, a dielectric layer over the first etch stop layer, and a second conductive feature in the dielectric layer and the first etch stop layer. The second conductive feature is over and contacting the first conductive feature. An air spacer encircles the second conductive feature, and sidewalls of the second conductive feature are exposed to the air spacer. A protection ring further encircles the second conductive feature, and the protection ring fully separates the second conductive feature from the air spacer.

Abstract: Methods, systems, and devices for facilitation of intraluminal medical procedures within the neurovasculature, the methods, systems and the devices including catheters and catheter advancement elements.