Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.

Abstract: An integrated system of a physical consumption environment and a network consumption environment and a control method thereof are provided. The control method of the integrated system of the physical consumption environment and the network consumption environment includes the following steps. A biological characteristic image of a consumer in the physical consumer environment is obtained. The biological characteristic image is identified to obtain an identity information from an identity database. An activity of the consumer in the physical consumption environment is detected. A product followed by the consumer and/or a physical behavior information are obtained according to the activity of the consumer in the physical consumption environment. A network behavior information of the consumer in the network consumer environment is obtained according to the identity information. A price of the product is dynamically adjusted according to the physical behavior information and the network behavior information.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming an n-type doped region in a semiconductor substrate and forming a semiconductor stack over the semiconductor substrate. The semiconductor stack has multiple sacrificial layers and multiple semiconductor layers laid out alternately. The method also includes introducing n-type dopants from the n-type doped region into the semiconductor stack during the forming of the semiconductor stack. The method further includes patterning the semiconductor stack to form a fin structure and forming a dummy gate stack to wrap around a portion of the fin structure. In addition, the method includes removing the dummy gate stack and the sacrificial layers to release multiple semiconductor nanostructures made up of remaining portions of the semiconductor layers. The method includes forming a metal gate stack to wrap around the semiconductor nanostructures.

Abstract: The invention is directed to a method of preparing a long chain dicarboxylic acid producing strain by using directed evolution and homologous recombination, a strain obtained by this method that is capable of producing a long chain dicarboxylic acid under an acidic condition and the use of the strain. In particular, the invention is directed to a method of preparing a long chain dicarboxylic acid producing strain by using directed evolution of CYP52A12 gene and homologous recombination, a strain obtained by this method that is capable of producing a long chain dicarboxylic acid under an acidic condition and the use of the strain.

Abstract: A manufacturing method of a wavelength conversion device, and a wavelength conversion device manufactured by the method are provided. The manufacturing method of the wavelength conversion device of the disclosure includes the following steps. A wavelength conversion material layer is formed on a substrate by a sol-gel method. The wavelength conversion material layer includes a first colloidal material, and a fluorescent material. The wavelength conversion material layer is solidified, thereby forming a wavelength conversion layer including a plurality of first microstructures. The step of solidifying the wavelength conversion material layer includes irradiating the wavelength conversion material layer with a laser. The manufacturing method of the wavelength conversion device and the wavelength conversion device provided by the disclosure have advantages such as a simple process, and low manufacturing cost.

Abstract: A method performed by a UE for wireless communications is provided. The method includes receiving first other system information from a base station, other system information including system information other than minimum system information broadcast by the base station; determining whether an SUL-related factor is present in the first other system information; transmitting an RRC system information request message to the base station in response to determining that the SUL-related factor is absent in the first other system information; and determining a minimum required received level based on the SUL-related factor in a case that the UE receives the SUL-related factor in second other system information from the base station; and determining a cell selection criterion based on the minimum required received level.

Abstract: A system includes a charge pump system having a plurality of enable signal input terminals and an output terminal, the charge pump system configured to provide an output voltage at the output terminal; and a detection circuit connected to the enable terminals and the output terminal of the charge pump system, the detection circuit configured to compare the charge pump system output voltage to a plurality of predefined input detection voltage levels, and to selectively output a plurality of enable signals to the charge pump system enable signal input terminals in response to the comparison.

Abstract: A memory device includes a first memory cell having a first polysilicon line associated with a first read word line and intersecting a first active region and a second active region, and a second polysilicon line and a first CPODE associated with a first program word line, the second polysilicon line intersecting the first active region and the first CPODE intersecting the second active region. The memory device also includes a second memory cell adjacent to the first memory cell, the second memory cell having a third polysilicon line associated with a second read word line and intersecting the first active region and the second active region, and a fourth polysilicon line and a second CPODE associated with a second program word line, the fourth polysilicon line intersecting the second active region and the second CPODE intersecting the first active region to form a cross-arrangement of CPODE.

Abstract: The invention provides compounds having Formula (I): or a pharmaceutically acceptable salt thereof, as well as pharmaceutical compositions comprising the same, processes for their preparation, and methods of treating and preventing HIV infection by their administration.

Abstract: A data protection method for protecting backup data stored in a data backup device is executed by a mobile device. When the mobile device is included in a trust circle of the data backup device, the mobile device can receive a certified signal, can execute a file manager of a backup APP for loading the backup data, and can generate a first invitation code. Otherwise, the mobile device cannot access the backup data, and displays a code input menu for inputting a second invitation code. The data backup device can certify the first invitation code and the second invitation code for determining whether the mobile device can be added into the trust circle of the data backup device. Therefore, the mobile device included in the trust circle can access the backup data, and the privacy of the backup data can be secured.

Abstract: A manufacturing method of a metal structure is disclosed, which includes the following steps: forming a seed layer on a substrate; forming a patterned metal layer on the seed layer, wherein the patterned metal layer includes a metal member; forming a first patterned photoresist layer on the seed layer, wherein a thickness of the first patterned photoresist layer is less than a thickness of the patterned metal layer; and performing a first patterning process to the seed layer through the first patterned photoresist layer to form a patterned seed layer, wherein after the first patterning process, the metal member includes a first part and a second part, the first part is disposed between the patterned seed layer and the second part, and a width of the first part is greater than a width of the second part.

Abstract: A semiconductor device includes a first wafer and a second wafer. The semiconductor device includes a seal ring structure comprising a first metal structure in a body of the first wafer, a second metal structure in the body of the first wafer, a third metal structure in a body of the second wafer, and a metal bonding structure including a first set of metal elements coupling the first metal structure and the third metal structure through an interface between the first wafer and the second wafer, and a second set of metal elements coupling the second metal structure and the third metal structure through the interface between the first wafer and the second wafer.

Abstract: Described are methods, systems, and devices for facilitation of intraluminal medical procedures within the neurovasculature including catheters and catheter advancement elements.

Abstract: A polishing pad includes a sensor assembly surrounded by a lower portion of the polishing pad, and an upper portion including a pad portion disposed on the assembly and at least a portion of a polishing layer disposed on the lower portion. The sensor assembly includes a lower body having a first pair of electrodes formed thereon, a polymer body having a second pair of electrodes formed thereon and aligned with the first pair of electrodes, and a pair of gaps between the first pair of electrodes and the second pair of electrodes.

Abstract: An over-voltage protection device, a memory storage device, and an over-voltage protection method are provided. The over-voltage protection device includes a main load switch, multiple power channels, a voltage detection circuit, and a control circuit. The main load switch is configured to receive power and provide the power to a first power channel among the power channels. The voltage detection circuit is configured to detect a power abnormal status of a second power channel among the power channels. The control circuit is configured to control the main load switch to stop power supply to the first power channel according to the power abnormal status.

Abstract: This disclosure relates to antigenic EBV polypeptides and their use in eliciting antibodies against EBV. Also disclosed are antigenic polypeptides comprising an EBV polypeptide and a ferritin protein.

Abstract: An intersection collision avoidance system determines, for an ego vehicle, a direction indicated by its turn signal, its destination setting, or both, generates, where the direction is determined, a possible intended path relative to an intersection using a high-definition (HD) map and the direction, and generates, where the destination setting is determined, a possible intended path for using the HD map and the destination setting. Where the direction and the destination setting are both determined, the direction indicated by the turn signal is compared to the possible intended path generated using the destination setting, and one of the possible intended paths is selected based on the comparison. The system transmits, to a conflict detection module, a set of drive goals for the ego vehicle relative to the intersection that conforms to the intended path. The module can determine a possible collision with another road user using the drive goals.

Abstract: An optical image stabilization driver device includes an image sensor, a fixed carrier, a circuit element, an elastic element and a driving element. The circuit element includes a fixed part disposed on the fixed carrier, a movable part and an electrical transmission part. The image sensor is disposed on the movable part. The electrical transmission part has conductive routes electrically connected to the movable part and the fixed part. The elastic element includes a first frame part corresponding to the fixed part, a second frame part corresponding to the movable part and an elastic connection part connected to the first frame part and the second frame part and providing the image sensor with a freedom of movement in a plane. The driving element is configured to drive the image sensor to move relative the fixed carrier in the plane.

Abstract: The present application provides a memory device and a manufacturing method of the memory device. The memory device includes a semiconductor substrate defined with an active area over or in the semiconductor substrate and including a recess surrounding the active area; a first dielectric layer disposed over the active area of the semiconductor substrate; a second dielectric layer disposed over the first dielectric layer; and an isolation member disposed within the recess and entirely surrounding the active area.

Abstract: An image display system and a display method are provided. The image display system includes at least one image display device including an image decoding circuit, a 3D image processing circuit, and an image playback circuit. The image decoding circuit decodes a 3D image signal from an external signal source to obtain and output an image data signal and a synchronization signal. The 3D image processing circuit performs 3D image processing on the image data signal and the synchronization signal to generate a processed image data signal and a processed synchronization signal. The viewing angle switching circuit generates a processed viewing angle switching signal according to the processed synchronization signal. The image playback circuit generates a playback image signal according to the processed image data signal. The image display system generates a 3D image according to the processed viewing angle switching signal and the playback image signal.