Abstract: A method for fabricating a dual silicide device includes growing source and drain (S/D) regions for an N-type device, forming a protection layer over a gate structure and the S/D regions of the N-type device and growing S/D regions for a P-type device. A first dielectric layer is conformally deposited and portions removed to expose the S/D regions. Exposed S/D regions for the P-type device are silicided to form a liner. A second dielectric layer is conformally deposited. A dielectric fill is formed over the second dielectric layer. Contact holes are opened through the second dielectric layer to expose the liner for the P-type device and expose the protection layer for the N-type device. The S/D regions for the N-type device are exposed by opening the protection layer. Exposed S/D regions adjacent to the gate structure are silicided to form a liner for the N-type device. Contacts are formed.

Abstract: In a fin-Field Effect Transistor (finFET), a recess is created at a location of a fin, the fin being coupled to a gate of the finFET, the recess extending into a substrate interfacing with the gate. The recess is filled at least partially with a first conductive material. The first conductive material is insulated from the gate. The fin is replaced with a replacement structure. The replacement structure is electrically connected to the first conductive material using a second conductive material. the second conductive material is insulated from a first surface of the finFET. A first electrical contact structure is fabricated on the first surface. A second electrical contact structure is fabricated on a second surface of the finFET, the second surface being on a different spatial plane than the first surface.

Abstract: In a fin-Field Effect Transistor (finFET), a recess is created at a location of a fin, the fin being coupled to a gate of the finFET, the recess extending into a substrate interfacing with the gate. The recess is filled at least partially with a first conductive material. The first conductive material is insulated from the gate. The fin is replaced with a replacement structure. The replacement structure is electrically connected to the first conductive material using a second conductive material. The second conductive material is insulated from a first surface of the finFET. A first electrical contact structure is fabricated on the first surface. A second electrical contact structure is fabricated on a second surface of the finFET, the second surface being on a different spatial plane than the first surface.

Abstract: Techniques for forming Ga-doped source drain contacts in Ge-based transistors are provided. In one aspect, a method for forming Ga-doped source and drain contacts includes the steps of: depositing a dielectric over a transistor; depositing a dielectric over the transistor; forming contact trenches in the dielectric over, and extending down to, source and drain regions of the transistor; depositing an epitaxial material into the contact trenches; implanting gallium ions into the epitaxial material to form an amorphous gallium-doped layer; and annealing the amorphous gallium-doped layer under conditions sufficient to form a crystalline gallium-doped layer having a homogenous gallium concentration of greater than about 5×1020 at./cm3. Transistor devices are also provided utilizing the present Ga-doped source and drain contacts.

Abstract: A substrate structure for a vertically stacked transistor includes a substrate having at least one fin and a cavity formed through a portion of the substrate. An inner spacer disposed in the cavity. A first epitaxy layer disposed upon the substrate, and a liner is disposed on portions of the first epitaxy layer and the inner spacer. A second epitaxy layer is disposed upon a top portion of the liner. The first epitaxy layer and the second epitaxy layer share a common U-shaped fin body formed by the inner spacer and the at least one fin.

Abstract: A method of forming a gate structure, including forming one or more vertical fins on a substrate; forming a bottom spacer on the substrate surface adjacent to the one or more vertical fins; forming a gate structure on at least a portion of the sidewalls of the one or more vertical fins; forming a gauge layer on at least a portion of the bottom spacer, wherein the gauge layer covers at least a portion of the gate structure on the sidewalls of the one or more vertical fins; and removing a portion of the gauge layer on the bottom spacer.

Abstract: Fabricating a semiconductor device includes receiving a semiconductor structure including a substrate, a fin formed on a portion of the substrate, and a first hard mask disposed on a top surface of the fin. A bottom spacer is formed on the substrate in contact with a bottom portion of the fin. A top spacer is formed in contact with a top portion of the fin. A lateral recess is formed in the substrate under the bottom spacer. A first epitaxy upon the bottom spacer within the lateral recess and a second epitaxy upon the top spacer are simultaneously grown. The first epitaxy forms a bottom source and drain and the second epitaxy forms a top source and drain.

Abstract: A method of fabricating an SRAM semiconductor device includes forming first and second FinFETs on an upper surface of a bulk substrate. The first FinFET includes a first source/drain region containing first dopants, and the second FinFET includes a second source/drain region containing second dopants. The method further includes selectively controlling a temperature of the second FinFET with respect to a temperature of the first FinFET during an anneal process to activate the first and second dopants such that the second source/drain region is formed having a different electrical resistance with respect to the first source/drain region.

Abstract: A semiconductor device includes a fin patterned in a substrate; a gate disposed over and substantially perpendicular to the fin; a pair of epitaxial contacts including a III-V material over the fin and on opposing sides of the gate; and a channel region between the pair of epitaxial contacts under the gate comprising an undoped III-V material between doped III-V materials, the doped III-V materials including a dopant in an amount in a range from about 1e18 to about 1e20 atoms/cm3 and contacting the epitaxial contacts.

Abstract: Techniques and structures for controlling etch-back of a finFET fin are described. One or more layers may be deposited over the fin and etched. Etch-back of a planarization layer may be used to determine a self-limited etch height of one or more layers adjacent the fin and a self-limited etch height of the fin. Strain-inducing material may be formed at regions of the etched fin to induce strain in the channel of a finFET.

Abstract: Structures including a vertical-transport field-effect transistor and a planar field-effect transistor, and methods of forming such structures. First and second sacrificial fins are respectively formed over first and second areas of the first device region. One or more semiconductor fins of the vertical-transport field-effect transistor are formed over the second device region. A first gate electrode of the planar field-effect transistor, which is arranged on the first device region between the first sacrificial fin and the second sacrificial fin, and a second gate electrode of the vertical-transport field-effect transistor, which is wrapped about the one or more semiconductor fins, are currently formed.

Abstract: The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a contact silicide on a source-drain (S-D) region of a field effect transistor (FET) having extensions by using an undercut etch and a salicide process. A method of forming a contact silicide extension is disclosed. The method may include: forming an undercut region below a dielectric layer and above a source-drain region, the undercut region located directly below a bottom of a contact trench and extending below the dielectric layer to a gate spacer formed on a sidewall of a gate stack; and forming a contact silicide in the undercut region, the contact silicide in direct contact with the source-drain region.

Abstract: A semiconductor structure. The structure includes first source/drain located in a first source/drain region. The structure includes a second source/drain located in a second source/drain region. The structure includes a plurality of semiconductor nanosheets located between the first source/drain and the second source/drain in a gate region. The structure includes an insulating layer separating the first source drain from a bulk substrate. The bulk substrate may have a first horizontal surface in the gate region, a second horizontal surface in the first source/drain region, and a connecting surface forming an at least partially vertical connection between the first horizontal surface and the second horizontal surface. The insulating layer may be directly on the second horizontal surface and the connecting surface.

Abstract: A semiconductor substrate includes a bulk substrate layer that extends along a first axis to define a width and a second axis perpendicular to the first axis to define a height. A plurality of hetero semiconductor fins includes an epitaxial material formed on a first region of the bulk substrate layer. A plurality of non-hetero semiconductor fins is formed on a second region of the bulk substrate layer different from the first region. The non-hetero semiconductor fins are integrally formed from the bulk substrate layer such that the material of the non-hetero semiconductor fins is different from the epitaxial material.

Abstract: Structures for spacers of a field-effect transistor and methods for forming such spacers. A mask layer has a feature separated from a vertical sidewall of a first gate structure by a space of predetermined width that exposes a top surface of a semiconductor body. A spacer is formed adjacent to the vertical sidewall of the first gate structure. The spacer has a first section in the space and a second section. The first section of the spacer is located vertically between the second section of the spacer and the top surface of the semiconductor body. The first section of the spacer extends through the space to the top surface of the semiconductor body, and the first section of the spacer fully fills the space.

Abstract: Embodiments are directed to a method of fabricating inner spacers of a nanosheet FET. The method includes forming sacrificial and channel nanosheets over a substrate, removing sidewall portions of the sacrificial nanosheet, and forming a dielectric that extends over the channel nanosheet and within a space that was occupied by the removed sidewall portions of the sacrificial nanosheet. The method further includes forming a top protective spacer over the channel nanosheet and the dielectric, as well as applying a directional etch to the top protective spacer, the channel nanosheet, and the dielectric, wherein the directional etch is configured to be selective to the channel nanosheet and the dielectric, wherein the directional etch is configured to not be selective to the top protective spacer, and wherein applying the directional etch etches portions of the channel nanosheet and portions of the flowable dielectric that are not under the top dielectric.

Abstract: Techniques for forming a metastable phosphorous P-doped silicon Si source drain contacts are provided. In one aspect, a method for forming n-type source and drain contacts includes the steps of: forming a transistor on a substrate; depositing a dielectric over the transistor; forming contact trenches in the dielectric that extend down to source and drain regions of the transistor; forming an epitaxial material in the contact trenches on the source and drain regions; implanting P into the epitaxial material to form an amorphous P-doped layer; and annealing the amorphous P-doped layer under conditions sufficient to form a crystalline P-doped layer having a homogenous phosphorous concentration that is greater than about 1.5×1021 atoms per cubic centimeter (at./cm3). Transistor devices are also provided utilizing the present P-doped Si source and drain contacts.

Abstract: A computer-implemented method for training a random matrix network is presented. The method includes initializing a random matrix, inputting a plurality of first vectors into the random matrix, and outputting a plurality of second vectors from the random matrix to be fed back into the random matrix for training. The random matrix can include a plurality of two-terminal devices or a plurality of three-terminal devices or a film-based device.

Abstract: A method of forming a fin field effect transistor (finFET), including forming a temporary gate structure having a sacrificial gate layer and a dummy gate layer on the sacrificial gate layer, forming a gate spacer layer on each sidewall of the temporary gate structure, forming a source/drain spacer layer on the outward-facing sidewall of each gate spacer layer, removing the dummy gate layer to expose the sacrificial gate layer, removing the sacrificial gate layer to form a plurality of recessed cavities, and forming a gate structure, where the gate structure occupies at least a portion of the plurality of recessed cavities.

Abstract: The disclosure is directed to an integrated circuit structure and method of forming the same. The integrated circuit structure may include: a first device region including: a floating gate structure substantially surrounding a first fin that is over a substrate; a first bottom source/drain within the substrate, and beneath the first fin and the floating gate structure; a first top source/drain over the first fin and the floating gate structure; a first spacer substantially surrounding the first top source/drain and disposed over the floating gate structure; and a gate structure substantially surrounding and insulated from the floating gate structure, the gate structure being disposed over the substrate and having a height greater than a height of the floating gate.