Patents by Inventor Chun Chieh

Chun Chieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stator structures
    Publication number: 20080116761
    Abstract: The stator structures including: a stator base has a plurality of stator slots and every stator slot is including two outside tunnels and an internal tunnel. The width of every outside tunnels is wider than the internal tunnel. Tow stator arrangements are provided on end of the stator base respectively. Every stator arrangement has a plurality of fixing portions and the fixing portions correspond to the outside tunnels. The thickness of every fixing portion is smaller or equal to the distance between the wall of every outside tunnel and the wall of every internal tunnel. Hence, every insulation plate occupies less space of said stator slot and the volume of every coil can be increased.
    Type: Application
    Filed: May 8, 2007
    Publication date: May 22, 2008
    Applicant: LIDASHI INDUSTRY CO., LTD
    Inventors: Yung-Yu Lin, Chun-Chieh Ni
  • strains for hyper-producing glutathione and ?-glutamylcysteine and processes of use
    Patent number: 7371557
    Abstract: The present invention provides a biologically pure culture of Saccharomyces cerevisiae strain YA02032 or YA03083, which culture has a characteristic nature capable of producing glutathione and the precursor thereof, ?-glutamylcysteine. A composition comprising the culture and a process for the production of glutathione and/or the precursor thereof, ?-glutamylcysteine, are also provided.
    Type: Grant
    Filed: February 22, 2006
    Date of Patent: May 13, 2008
    Assignee: Food Industry Research and Development Institute
    Inventors: Jinn-Tsyy Lai, Shin-Ying Lee, Chun-Chieh Hsieh, Chin-Fa Hwang, Chii-Cherng Liao
  • Relaxed silicon germanium substrate with low defect density
    Patent number: 7357838
    Abstract: A method of forming a strained silicon layer on a relaxed, low defect density semiconductor alloy layer such as SiGe is provided.
    Type: Grant
    Filed: March 8, 2005
    Date of Patent: April 15, 2008
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chun Chieh Lin, Yee-Chia Yeo, Chien-Chao Huang, Chao-Hsiung Wang, Tien-Chih Chang, Chenming Hu, Fu-Liang Yang, Shih-Chang Chen, Mong-Song Liang, Liang-Gi Yao
  • Interface apparatus with a rotational mechanism
    Patent number: 7357654
    Abstract: An interface apparatus having a rotational mechanism for connecting with an interface port in an electronic product is provided. The interface apparatus comprises a body, a connector and a rotational mechanism. The connector is used for connecting with the interface port of an electronic device. The rotational mechanism links up the body with the connector. The rotational mechanism has one to five degrees of freedom of movements. One or a multiple of rotational junctions together provides the degrees of freedom of movements in the rotational mechanism.
    Type: Grant
    Filed: September 17, 2003
    Date of Patent: April 15, 2008
    Assignee: Ritek Corporation
    Inventors: Yu-Chuan Lin, Chun-Chieh Chen, Hung-Ju Shen, Chien-Hua Wu, Sheng-Lin Chiu, Huan-Tung Wang, Hsin-Chih Hung
  • Methods of forming semiconductor devices with high-k gate dielectric
    Patent number: 7354830
    Abstract: A method of fabricating an integrated circuit is provided. A first gate dielectric portion is formed on a substrate in a first transistor region. The first gate dielectric portion includes a first high-permittivity dielectric material. The first gate dielectric portion has a first equivalent silicon oxide thickness. A second gate dielectric portion is formed on the substrate in a second transistor region. The second gate dielectric portion includes the first high-permittivity dielectric material. The second gate dielectric portion has a second equivalent silicon oxide thickness. The second equivalent silicon oxide thickness is different than the first equivalent silicon oxide thickness.
    Type: Grant
    Filed: March 16, 2006
    Date of Patent: April 8, 2008
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Chieh Lin, Wen-Chin Lee, Chenming Hu, Shang-Chih Chen, Chih-Hao Wang, Fu-Liaog Yang, Yee-Chia Yeo
  • Electronic system with nand flash memory storing boot code and highly reliable boot up method
    Publication number: 20080082814
    Abstract: A boot up method makes an electronic system boot up by a processor according to a boot code in a NAND flash memory and includes the following steps. First, the flash memory storing a boot code or boot codes is provided. Next, a first boot code is copied to an XIP memory in response to a hardware reset signal. Then, the processor executes the first boot code in the XIP memory and thus makes the system boot up. Next, whether the system boots up successfully is judged after a time delay. When the system fails to boot up, the system is reset and a second boot code is copied to the XIP memory. Thereafter, the processor executes the second boot code in the XIP memory and thus boots up the system. If the system still fails to boot up, the above-mentioned steps are repeated until the system boots up successfully.
    Type: Application
    Filed: October 3, 2007
    Publication date: April 3, 2008
    Applicant: Magic Pixel Inc.
    Inventors: Yu-Hao Kuo, Chi-Houn Ma, Yu-Ting Cheng, Chun-Chieh Huang, Hua-Lin Chang
  • SEMICONDUCTOR DEVICE
    Publication number: 20080073727
    Abstract: A semiconductor device is provided. A transistor is formed on a substrate, and a metal silicide layer is formed on the surface of a gate conductor layer and a source/drain region. Next, a surface treatment process is performed to selectively form a protection layer on the surface of the metal silicide layer. Then, a spacer of the transistor is partially removed using the protection layer as a mask, so as to reduce the width of the spacer. Then, a stress layer is formed on the substrate.
    Type: Application
    Filed: July 27, 2007
    Publication date: March 27, 2008
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chao-Ching Hsieh, Chun-Chieh Chang, Tzung-Yu Hung
  • METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
    Publication number: 20080076213
    Abstract: A method of fabricating semiconductor device is provided. A transistor is formed on a substrate, and a metal suicide layer is formed on the surface of a gate conductor layer and a source/drain region. Next, a surface treatment process is performed to selectively form a protection layer on the surface of the metal silicide layer. Then, a spacer of the transistor is partially removed using the protection layer as a mask, so as to reduce the width of the spacer. Then, a stress layer is formed on the substrate.
    Type: Application
    Filed: September 21, 2006
    Publication date: March 27, 2008
    Inventors: Chao-Ching Hsieh, Chun-Chieh Chang, Tzung-Yu Hung
  • Method and devices for producing air sensitive electrode materials for lithium ion battery applications
    Publication number: 20080056978
    Abstract: A unit for use within a furnace which is absent a controlled atmosphere, for carrying out a synthesizing process for synthesizing precursors to form a synthesized product at elevated temperatures. The unit consists of a vessel, having at least one opening, for containing materials of the synthesizing process, and a solid reductive material. The materials of the synthesizing process are separated from the atmosphere of the furnace by either the vessel or the reductive material. The unit is especially suited for synthesizing LiFePO4 from Fe2O3, Li2CO3, carbon black, and phosphoric acid precursors.
    Type: Application
    Filed: April 29, 2006
    Publication date: March 6, 2008
    Inventors: Chun-Chieh Chang, Tsun-Yu Chang
  • METHODS FOR PLATING AND FABRICATION APPARATUS THEREOF
    Publication number: 20080057211
    Abstract: A method for plating includes positioning a substrate facing a plating solution. The method also includes immersing the substrate into the plating solution while plating a layer of material over a surface of the substrate, wherein an immersion speed of the substrate is about 100 millimeters per second (mm/s) or more while at least one portion of the substrate contacts the plating solution.
    Type: Application
    Filed: August 29, 2006
    Publication date: March 6, 2008
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chung-Hsien Chen, Chun-Chieh Lin, Hung-Wen Su, Minghsing Tsai, Shau-Lin Shue
  • VoIP apparatus embedded in mobile communication equipment
    Publication number: 20080051137
    Abstract: The invention is to provide a VoIP apparatus embedded in a mobile communication equipment. The VoIP apparatus according to the invention includes a converting module. In particular, the converting module is used for converting voltage levels and interfaces between the communication module in the mobile communication equipment and the VoIP apparatus.
    Type: Application
    Filed: August 23, 2007
    Publication date: February 28, 2008
    Inventors: Chun Chieh Lee, Teng-Fu Hsu
  • Transistor with a strained region and method of manufacture
    Patent number: 7335929
    Abstract: A transistor structure comprises a channel region overlying a substrate region. The substrate region comprises a first semiconductor material with a first lattice constant. The channel region comprises a second semiconductor material with a second lattice constant. The source and drain regions are oppositely adjacent the channel region and the top portion of the source and drain regions comprise the first semiconductor material. A gate dielectric layer overlies the channel region and a gate electrode overlies the gate dielectric layer.
    Type: Grant
    Filed: October 18, 2004
    Date of Patent: February 26, 2008
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Chieh Lin, Wen-Chin Lee, Yee-Chia Yeo, Chenming Hu
  • METHOD FOR FABRICATING SEMICONDUCTOR MOS DEVICE
    Publication number: 20080038887
    Abstract: A method of making a transistor device having silicided source/drain is provided. A gate electrode is formed on a substrate with a gate dielectric layer therebetween. A spacer is formed on sidewalls of the gate electrode. A source/drain is implanted into the substrate. A pre-amorphization implant (PAI) is performed to form an amorphized layer on the source/drain. A post-PAI annealing process is performed to repair defects formed during the PAI process. A metal silicide layer is then formed from the amorphized layer.
    Type: Application
    Filed: August 8, 2006
    Publication date: February 14, 2008
    Inventors: Yu-Lan Chang, Chao-Ching Hsieh, Yi-Wei Chen, Tzung-Yu Hung, Chun-Chieh Chang
  • ELECTRONIC DEVICE HAVING HEAT SPREADER
    Publication number: 20080024993
    Abstract: An electronic device includes a circuit board and a heat spreader. The circuit board has a first surface, a second surface, and an electronic component. The first surface is opposite to the second surface, and the electronic component is located on the first surface. The heat spreader is disposed on the circuit board has a first portion, a second portion, and a third portion. The first portion is located on the first surface of the circuit board and contacts the electronic component. The second portion is located on the second surface of the circuit board, and the third portion is connected between the first portion and the second portion.
    Type: Application
    Filed: July 26, 2007
    Publication date: January 31, 2008
    Applicant: ASUSTEK COMPUTER INC.
    Inventors: Hung-Chun Chu, Chun-Chieh Wu, Hsi-Feng Lin
  • METHOD OF STRIPPING REMNANT METAL
    Publication number: 20080020587
    Abstract: A method of stripping a remnant metal is disclosed. The remnant metal is formed on a transitional silicide of a silicon substrate. Firstly, a surface oxidation process is performed on the transitional silicide, so as to form a protective layer on the transitional silicide. Then, a HPM stripping process is performed on the silicon substrate in order to strip the remnant metal.
    Type: Application
    Filed: July 20, 2006
    Publication date: January 24, 2008
    Inventors: Chun-Chieh Chang, Tzung-Yu Hung, Chao-Ching Hsieh, Yi-Wei Chen, Yu-Lan Chang
  • System and method for achieving desired operation illumination condition for light emitters
    Publication number: 20080012820
    Abstract: A method and a system for achieving a desired operation illumination condition for a plurality of light emitters are provided. The light emitters are divided into mutually distinctive groups. The groups of light emitters are sequentially activated while maintaining the rest of groups of the light emitters in an inactivated state. In this manner, the illumination condition of each group of light emitters are detected, so as to adjust a driving condition for the light emitters, thereby producing a light source with uniformly distributed white light spectra, and a homogeneous intensity distribution over the entire region of the light source.
    Type: Application
    Filed: October 16, 2006
    Publication date: January 17, 2008
    Inventors: Chun-Chieh Yang, Hong-Xi Cao, Kun-Chieh Chang, Zhi-Xian Huang, Cheng-Fa Chen, Ji-Bin Horng
  • Method for fabricating metal silicide
    Publication number: 20080009134
    Abstract: A method for fabricating a metal silicide is described. First, a silicon material layer is provided. An alloy layer is formed on the silicon material layer, and the alloy layer is made from a first metal and a second metal, wherein, the first metal is a refractory metal, and the second metal is selected from a group consisting of Pt, Pd, Mo, Ru, and Ta. A first rapid thermal process (RTP) is performed at a first temperature. A first cleaning process is performed by using a cleaning solution. A second RTP is performed at a second temperature, wherein the second temperature is higher than the first temperature. A second cleaning process is performed by using a cleaning solution including a hydrochloric acid.
    Type: Application
    Filed: July 6, 2006
    Publication date: January 10, 2008
    Inventors: Tsung-Yu Hung, Chun-Chieh Chang, Chao-Ching Hsieh, Yi-Wei Chen, Yu-Lan Chang, Chien-Chung Huang
  • System and method for driving light emitters of backlight module using current mixing
    Publication number: 20080007510
    Abstract: A system and a method for driving light emitters of a liquid crystal display (LCD) backlight module is disclosed. The system drives the light emitters by supplying a constant current and a pulse width modulated current to an individual light emitter, the pulse width modulated current being determined in accordance with an optical output of the light emitter. Accordingly, the system can provide a desired amount of current to the light emitters, and individually control the optical output of the light emitters.
    Type: Application
    Filed: October 16, 2006
    Publication date: January 10, 2008
    Inventors: Zhi-Xian Huang, Hong-Xi Cao, Kun-Chieh Chang, Chun-Chieh Yang, Fu-Shun He
  • Protein Skimmer
    Publication number: 20080006569
    Abstract: A protein skimmer for filtering and cleaning water in an aquarium having a foam generating assembly having an air chamber (73) and a nozzle (74) in the air chamber, the nozzle being provided with a plurality of air holes (741) and being connected to an inlet tube (71), the inlet tube communicating with a foam cavity within a vertical guide tube (20) for foam, the guide tube (20) generally being tapered as a whole and including an open upper end (202), a bottom end (203) and a hollow cone-shaped circumferential wall being formed between the upper end and the bottom end and encircling the foam cavity (21) thereby tapering toward and communicating with the upper end (202).
    Type: Application
    Filed: June 21, 2007
    Publication date: January 10, 2008
    Inventor: Chun-Chieh Liu
  • Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance
    Patent number: 7312136
    Abstract: A method for making a SOI wafer with a strained silicon layer for increased electron and hole mobility is achieved. The method forms a porous silicon layer on a seed wafer. A H2 anneal is used to form a smooth surface on the porous silicon. A strain free (relaxed) epitaxial SixGe1-x layer is deposited and a bonding layer is formed. The seed wafer is then bonded to a handle wafer having an insulator on the surface. A spray etch is used to etch the porous Si layer resulting in a SOI handle wafer having portions of the porous Si layer on the relaxed SixGe1-x. The handle wafer is then annealed in H2 to convert the porous Si to a smooth strained Si layer on the relaxed SiGe layer of the SOI wafer.
    Type: Grant
    Filed: July 26, 2004
    Date of Patent: December 25, 2007
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Chao Huang, Yee-Chia Yeo, Kuo-Nan Yang, Chun-Chieh Lin, Chenming Hu