Abstract: A CMOS integrated circuit includes a substrate having an NMOS region with a P-well and a PMOS region with an N-well. A shallow trench isolation (STI) region is formed between the NMOS and PMOS regions and a composite silicon layer comprising a strained SiGe layer is formed over said P well region and over said N well region. The composite silicon layer is disconnected at the STI region. Gate electrodes are then formed on the composite layer in the NMOS and PMOS regions.

Abstract: The present invention provides a PoC system (push-to-talk over cellular system) and a method for distributing media data in PoC. The PoC system includes a plurality of clients, a controlling server and a first participating server. In the present invention, since a media receiving port is established in the first participating server which manages at least two clients at the same time, and when a media data is going to be distributed to the clients managed by the first participating server, the controlling server delivers the media data to the media receiving port only. In addition, a multicast addressing technology is further used in the first participating server, therefore, the path of delivering media data is changed and the efficiency of media data delivery during a communication is improved.

Abstract: An autocontrol method is provided for creating a simulated model that represents an autocontrol system. The autocontrol system includes a controller, a sensor and a plant. The simulated model includes a simulated controller, a simulated sensor, and a simulated plant corresponding to the controller, the sensor, and the plant respectively. The autocontrol simulating method includes steps of: loading parameter values of the controller and the sensor, the parameter values of the controller and the sensor being used as values for the simulated controller and the simulated sensor; setting parameter values of the simulated plant; calculating values for characteristic indicators of the simulated model; and depicting characteristic curves of the simulated model based on the values for characteristic indicators. A related autocontrol method for implementing the autocontrol method is also disclosed.

Abstract: A method of forming an epitaxial layer of uniform thickness is provided to improve surface flatness. A substrate is first provided and a Si base layer is then formed on the substrate by epitaxy. A Si—Ge layer containing 5 to 10% germanium is formed on the Si base layer by epitaxy to normalize the overall thickness of the Si base layer and the Si—Ge layer containing 5 to 10% germanium.

Abstract: An information display folder is provided herein.

Abstract: The back light module of LCD device of the present invention is to use the two ends of reflecting plate to roll up and cover light generating units and reaching the function of lamp reflector. Also, the problem of EMI (electric magnetic interference) can be overcome by covering a shell with an EMI protection function on the roll up ends and/or coating or covering the metal with an EMI protection function on one surface of the reflecting plate.

Abstract: An interconnect structure is described, disposed on a substrate with a conductive part thereon and including a first porous low-k layer on the substrate, a damascene structure in the first porous low-k layer electrically connecting with the conductive part, a second porous low-k layer over the first porous low-k layer and the damascene structure, and a UV cutting layer at least between the first and the second porous low-k layers, wherein the UV cutting layer is a UV reflection layer or a UV reflection-absorption layer.

Abstract: A method is provided to reduce strapping devices in a computer system having at least one configurable device, which includes the following steps. A configuration value stored in a non-volatile memory is first provided. During power-up and reset of the computer system, a processor reset signal and a bus reset signal of a high-speed peripheral bus are both asserted, wherein the high-speed peripheral bus is included in the computer system. When an operation clock of the high-speed peripheral bus reaches its working voltage and frequency, the configuration value is fetched from the non-volatile memory. The fetching step is repeated until a most significant bit (MSB) of a fetched configuration value changes from a first state to a second state.

Abstract: A method comprises providing a semiconductor alloy layer on a semiconductor substrate, forming a gate structure on the semiconductor alloy layer, forming source and drain regions in the semiconductor substrate on both sides of the gate structure, removing at least a portion of the semiconductor alloy layer overlying the source and drain regions, and forming a metal silicide region over the source and drain regions.

Abstract: The present image processing apparatus includes a pixel arrangement controller and two data unit buffers coupled with the pixel arrangement controller. This controller can rearrange the addresses of the pixels in the corresponding data unit buffer according to the size of the block. Accordingly, the pixel data of the same block can be arranged in sequential addresses of the data unit buffer. Therefore, the pixel data may be processed as a batch.

Abstract: A detection functionality of any type sensor is integrated into a flash memory disk. The sensor detects its environment and generates signals constantly. A microcontroller, connected with the sensor, saves all signals into a flash memory. A connection port, connected with the microcontroller, enables the flash memory disk to transfer its data to and from a computer when the connection port is coupled with the computer. A battery supplies power to the flash memory, the sensor and the microcontroller.

Abstract: A heterostructure resistor comprises a doped region formed in a portion of a semiconductor substrate, the substrate comprising a first semiconductor material having a first natural lattice constant. The doped region comprises a semiconductor layer overlying the semiconductor substrate. The semiconductor layer comprises a second semiconductor material with a second natural lattice constant.

Abstract: A method of forming an epitaxial layer of uniform thickness is provided to improve surface flatness. A substrate is first provided and a Si base layer is then formed on the substrate by epitaxy. A Si—Ge layer containing 5 to 10% germanium is formed on the Si base layer by epitaxy to normalize the overall thickness of the Si base layer and the Si—Ge layer containing 5 to 10% germanium.

Abstract: A method for remote controlling a wireless communication device by a message includes the following steps: the wireless communication device receives a message; and the wireless communication device executes a corresponding operation according to the data stored in the TP-User-Data (TP-UD) field or the data stored in the TP-Protocol-Identifier (TP-PID) field. A user can control the wireless communication device to perform functions like increasing volume or switching from a silent mode to a sound mode, or even switching the mobile phone off, through transmitting a text message to the mobile phone.

Abstract: A method of forming a channel region for a MOSFET device in a strained silicon layer via employment of adjacent and surrounding silicon-germanium shapes, has been developed. The method features simultaneous formation of recesses in a top portion of a conductive gate structure and in portions of the semiconductor substrate not occupied by the gate structure or by dummy spacers located on the sides of the conductive gate structure. The selectively defined recesses will be used to subsequently accommodate silicon-germanium shapes, with the silicon-germanium shapes located in the recesses in the semiconductor substrate inducing the desired strained channel region. The recessing of the conductive gate structure and of semiconductor substrate portions reduces the risk of silicon-germanium bridging across the surface of sidewall spacers during epitaxial growth of the alloy layer, thus reducing the risk of gate to substrate leakage or shorts.

Abstract: A double-side image scanning method and device is provided, wherein the scanning device includes a scanning module and a processing unit. The double-side image scanning method is used to determine the image range of the first side of the document through processing a first image signal obtained by scanning the first side of a document, and use the image range thus obtained as the image range of the second side, thus achieving the objective of automatically determining the size of the document to be scanned and the scanning position, and scanning the double sides of a document speedily.

Abstract: A method for fabricating a high-density array of crown capacitors with increased capacitance while reducing process damage to the bottom electrodes is achieved. The process is particularly useful for crown capacitors for future DRAM circuits with minimum feature sizes of 0.18 micrometer or less. A conformal conducting layer is deposited over trenches in an interlevel dielectric (ILD) layer, and is polished back to form capacitor bottom electrodes. A novel photoresist mask and etching are then used to pattern the ILD layer to provide a protective interlevel dielectric structure between capacitors. The protective structures prevent damage to the bottom electrodes during subsequent processing. The etching also exposes portions of the outer surface of bottom electrodes for increased capacitance (>50%). In a first embodiment the ILD structure is formed between pairs of adjacent bottom electrodes, and in a second embodiment the ILD structure is formed between four adjacent bottom electrodes.

Abstract: A method for non-volatile memory fabrication is provided, in which a substrate is provided, a bottom electrode is formed on the substrate, a solution with precursors of Zr and Sr is coated on the bottom electrode, the solution on the bottom electrode surface is dried and then fired to form a resistor layer of SrZrO3, and a top electrode is formed on the resistor layer.