Abstract: Provided is a semiconductor device and a method for its fabrication. The device includes a semiconductor substrate, a first silicide in a first region of the substrate, and a second silicide in a second region of the substrate. The first silicide may differ from the second silicide. The first silicide and the second silicide may be an alloy silicide.

Abstract: A digital-to-analog converter includes: a resistor string; a plurality of first switches each connected between an output node and a corresponding one of first endmost, second endmost and intermediate nodes of the resistor string; a decoding unit adapted for converting a higher-order portion of a digital signal into a decoder signal used to control the first switches such that one of which is selected according to the higher-order portion to connect the corresponding one of the nodes to the output node; and first and second voltage-setting units adapted to be connected between one of first and second reference voltage sources and one of the first and second endmost nodes of the resistor string, and operable in response to a lower-order portion of the digital signal to adjust voltages at the first endmost, second endmost and intermediate nodes of the resistor string according to the lower-order portion of the digital signal.

Abstract: Described is a method for automatically generating a wafer prober file whereby testing parameters and die identities can be established for testing a complete semiconductor wafer and whereby acceptable or rejected dies can be identified and correlated later with where the good or bad dies are physically located on a wafer-under-test.

Abstract: A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143.

Abstract: A portable data storage device includes a first storage unit having a data storing zone and a reserved zone for bad blocks in the first storage unit, and a second storage unit having a look-up table. The look-up table lists a number of configuration modes for the portable data storage device, each defining specific allocation sizes for the reserved zone and the data storing zone. The portable data storage device is configured to use a kth configuration mode. A method for dynamic memory management includes: i) determining a number of the bad blocks assigned to the reserved zone; ii) with reference to the look-up table, determining if this number is greater than a limit associated with the kth configuration mode; and iii) if so, reconfiguring the portable data storage device to use a (k+1)th configuration mode.

Abstract: The present invention relates to a sheet-like light source device, including a light-conducting plate having at least one convex portion disposed on the lateral portion thereof; at least one light-source unit disposed on one side of the light-conducting plate, which includes a light source and a reflecting sheet; and a housing having a chassis and at least one frame; in which the frame is mounted on the edges of the chassis, and a concave portion corresponding to the convex portion of the light-conducting plate to hold the convex portion and a plurality of light-guiding mechanisms are formed on the frame. The present invention further has a housing for a sheet-like light source device, including a chassis and a frame mounted on the edges of the chassis, in which a concave portion and a plurality of light-guiding mechanisms are formed on the frame.

Abstract: A method for synthesizing monodipersive polymeric microspheres is disclosed. The method can control the diameter distribution of the microspheres and make it homogeneous. The manufactured polymeric microspheres also have plural functional groups on the surface for depositing metal particles thereon through redox. Moreover, the metal particles can be distributed on the surface of the polymeric microspheres homogeneously.

Abstract: A strained-channel semiconductor structure and method of fabricating the same. The strained-channel semiconductor structure comprises a substrate composed of a first semiconductor material with a first natural lattice constant. A channel region is disposed in the substrate and a gate stack is disposed over the strained channel region A pair of source/drain regions are oppositely disposed in the substrate adjacent to the channel region, wherein each of the source/drain regions comprises a lattice-mismatched zone comprising a second semiconductor material with a second natural lattice constant rather than the first natural lattice constant, an inner side and an outer side corresponding to the gate stack, and at least one outer sides laterally contacts the first semiconductor material of the substrate.

Abstract: A Liquid Crystal Display (called LCD as following) power-driven structure comprises a rotating mechanism, a lifting mechanism and an adjusting mechanism with a power unit each. The power unit drives the gears of the rotating mechanism to adjust the lateral angle of the LCD, the gears of the lifting mechanism to adjust the height level of the LCD and the gears of the adjusting mechanism to adjust the pitch angle of the LCD. The LCD power-driven structure overcomes the drawbacks of the prior technique and accomplishes the purpose of adjusting the LCD to any required posture without manual effort for saving a user's energy and improving the convenience.

Abstract: Provided is a semiconductor device and a method for its fabrication. The device includes a semiconductor substrate, a first silicide in a first region of the substrate, and a second silicide in a second region of the substrate. The first silicide may differ from the second silicide. The first silicide and the second silicide may be an alloy silicide.

Abstract: A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143.

Abstract: This invention relates to an LCD-embeddable screen structure and particularly to a screen structure with a space for an LCD, having a screen module with a front partition, a side partition, and a rear partition and with an accommodation space allowing the LCD. The front partition of the screen module has an embedded cavity to the LCD and the LCD corresponding to the embedded cavity is fixed with a second fixing element onto the fixing board. The adjustment rims are an arcs, protruding from the edge of two protruding sides of the board, and help a user flexibly adjust the LCD for a proper angle of view.

Abstract: A method of fabricating an integrated circuit is provided. A first gate dielectric portion is formed on a substrate in a first transistor region. The first gate dielectric portion includes a first high-permittivity dielectric material. The first gate dielectric portion has a first equivalent silicon oxide thickness. A second gate dielectric portion is formed on the substrate in a second transistor region. The second gate dielectric portion includes the first high-permittivity dielectric material. The second gate dielectric portion has a second equivalent silicon oxide thickness. The second equivalent silicon oxide thickness is different than the first equivalent silicon oxide thickness.

Abstract: A radio communication system for communication between a first mobile system and a second mobile system. Each mobile system has a transceiver for receiving and emitting radio signal. The second mobile system comprises a received signal strength detecting device, a power controller and an indicating device. The received signal strength detecting device detects a received signal strength of the transceiver in the second mobile system. The power controller outputs a transmitted power strength status and controls transmitted power of the transceiver according to the received signal strength. The indicating device receives the transmitted power strength status and indicates a transmitted RF power strength status of the transceiver in the second mobile.

Abstract: A projection-type television is provided. The projection-type television includes a housing, a frame device, a projection screen and a connecting device. The connecting device cooperates with the frame device to fix the projector screen. The projector screen at least includes a first fringe portion and a second fringe portion, and the frame device at least includes a first frame component, a second frame component and a connector. The first fringe portion is disposed in a first slot formed in the first frame component. The second fringe portion is disposed in a second slot formed in the second frame component. The connector connects the first frame component with the second frame component. The frame device facilitates fixing the projection screen, and then the projection screen can be disposed at desirable positions according to a user's need.

Abstract: The present invention discloses a novel electrode-catalyst for direct methanol fuel cell prepared by introducing a carbon precursor into pores of a wormhole-like molecular sieve template, carbonizing the carbon precursor, removing the molecular sieve template to obtain a wormhole-like mesoporous carbon having a high specific surface of 800-1000 m2/g and a pore size of 4-5 nm, and depositing catalyst metal such as Pt—Ru on the mesoporous carbon.

Abstract: An optical disk drive for reading the data of a compact disk is provided. The optical disk drive includes an optical pick-up module and a housing. In which, the optical pick-up module includes a damper and an optical pick-up. The damper is used for securing the compact disk. And the optical pick-up, disposed near the damper, is used for reading the data of the compact disk. The housing, including a primary case and a movable case, is connected to the optical pick-up module. The primary case is connected to the optical pick-up module and is suitable for holding a portion of the compact disk. The movable case, integrated to the primary case, is suitable for having relative motions with respect to the primary case, so as to make the compact disk to be mutually contained by both the movable case and primary case.

Abstract: A strained-channel semiconductor structure and method of fabricating the same. The strained-channel semiconductor structure comprises a substrate composed of a first semiconductor material with a first natural lattice constant. A channel region is disposed in the substrate and a gate stack is disposed over the strained channel region A pair of source/drain regions are oppositely disposed in the substrate adjacent to the channel region, wherein each of the source/drain regions comprises a lattice-mismatched zone comprising a second semiconductor material with a second natural lattice constant rather than the first natural lattice constant, an inner side and an outer side corresponding to the gate stack, and at least one outer sides laterally contacts the first semiconductor material of the substrate.

Abstract: A communication method, comprising constructing a Virtual Private Network (VPN) tunnel between a mobile device and an Intranet; and performing an Extensible Authentication Protocol-Subscriber Identification Module (EAP-SIM) authentication through the VPN tunnel. Access right of target service can be verified according to information in a SIM card no matter what kind of network access technology the service subscriber is using with the proposed communication method. A system utilizing the method is further provided.

Abstract: A method for cutting a printed circuit board includes providing a printed circuit board including a cutting region having a plurality of metal conducting wires, disposing a patterned first protection layer on the printed circuit board surface and exposing the metal conducting wires in the cutting region, forming a conducting layer on a surface of the metal conducting wires, disposing a second protection layer on the cutting region, performing a cutting process in the cutting region, and removing the second protection layer.