Abstract: In one embodiment, a composition for use in making active materials for a lithium ion battery, the composition comprising a processed, homogenous mix of graphene-treated reactant, conductive material, and a Li and phosphate-based salt, the composition comprising a surface area of less than approximately 10 m2/g.

Abstract: The exemplary embodiments are related to systems and methods for automatically selecting one or more suitable medical imaging protocols based on a patient's clinical information. Exemplary embodiments relate to methods and systems for collecting clinical information for a current patient, generating an encoded description of a plurality of imaging protocols in a computer-processable format including medical concepts, converting the collected clinical information into the computer-processable format, and recommending or providing at least one suitable imaging protocol based on the encoded description and the converted clinical information for the current patient.

Abstract: A glass structure disposed in a frame of a sight. The glass structure includes a lens disposed in the frame and being at least 1 mm in thickness, a micro structure being formed at a center of a surface of the lens and 1.5 ?m deep from the surface, and a compound is filled in the micro structure; and at least one light source disposed on an edge of the lens, wherein light from the light source enters the lens and travels to the micro structure, and the compound absorbs the light and emits fluorescent light to display pattern of the micro structure.

Abstract: A device includes a diode, which includes a first, a second, and a third doped region in a semiconductor substrate. The first doped region is of a first conductivity type, and has a first impurity concentration. The second doped region is of the first conductivity type, and has a second impurity concentration lower than the first impurity concentration. The second doped region encircles the first doped region. The third doped region is of a second conductivity type opposite the first conductivity type, wherein the third doped region overlaps a portion of the first doped region and a portion of the second doped region.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1?xN (0<x<1) while the stress control layer is made from AlxInyGa1?x?yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.

Abstract: Embodiments of mechanisms for forming an image-sensor device are provided. The image-sensor device includes a substrate having a front surface and a back surface. The image-sensor device also includes a radiation-sensing region formed in the substrate. The radiation-sensing region is operable to detect incident radiation that enters the substrate through the back surface. The radiation-sensing region further includes an epitaxial isolation feature formed in the substrate and adjacent to the radiation-sensing region. The radiation-sensing region and the epitaxial isolation feature have different doping polarities.

Abstract: An image identifying method for offline and online synchronous operation is disclosed. When the mobile device focuses on an recognition target, images frames of an recognition target are retrieved and sent to an recognition server. The mobile device executes an offline recognition operation, and synchronously an recognition server executes an online recognition operation. A plurality of the matching data is saved in the mobile device, and a plurality of recognition data is saved in an recognition server, wherein the recognition data larger than the matching data. When the mobile device firstly generates the recognition result, the recognition result is displayed for user searching reference. If the mobile device receives an recognition result from the recognition server before the mobile device completing the recognition, the recognition result replied form the recognition server is displayed on the display monitor.

Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

Abstract: A dual-diaphragm acoustic transducer includes a substrate defining an opening, an inner diaphragm and an outer diaphragm concentrically mounted at one same side of the substrate corresponding to the opening of the substrate, and a plurality of elastic supporting members connected between the outer perimeter of the inner diaphragm and the inner perimeter of the outer diaphragm. Thus, when a sound wave enters the opening of the substrate, the sound wave pressure forces the outer diaphragm to displace and to carry the inner diaphragm to move, and the inner diaphragm itself will also be forced by the sound wave pressure to have a larger displacement than the outer diaphragm, enhancing the sensitivity. Further, using the inner and outer diaphragms to respond to different sound wave pressures can enhance the sound wave pressure sensing range.

Abstract: A method for controlling data write operation of a mass storage device is provided. The mass storage device has a controller and a memory unit. The method includes connecting the mass storage device to a host device, and receiving a voltage provided from the host device; sensing and monitoring whether the voltage is lower than a first predefined voltage; writing data to the mass storage device with a first frequency when the sensed voltage is higher than the first predefined voltage; and writing data to the mass storage device with a second frequency when the sensed voltage is lower than the first predefined voltage, wherein the second frequency is adjusted by decreasing the first frequency.

Abstract: The present disclosure relates to a semiconductor process, which includes: (a) providing a semiconductor element; (b) attaching the semiconductor element to a carrier by an adhesive layer, so that the adhesive layer is sandwiched between the semiconductor element and the carrier; and (c) cutting the semiconductor element to form a plurality of semiconductor units. Thereby, the gaps between the semiconductor units are fixed after the cutting process, so as to facilitate testing the semiconductor units.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a patterned dielectric layer having a plurality of first openings. The method includes forming a conductive liner layer over the patterned dielectric layer, the conductive liner layer partially filling the first openings. The method includes forming a trench mask layer over portions of the conductive liner layer outside the first openings, thereby forming a plurality of second openings, a subset of which are formed over the first openings. The method includes depositing a conductive material in the first openings to form a plurality of vias and in the second openings to form a plurality of metal lines. The method includes removing the trench mask layer.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

Abstract: A clamp is provided. The clamp comprises a frame and a movable structure. The movable structure is detachably connected with the frame to define a receiving space for receiving at least one substrate. After sliding along a surface of the frame to a suitable position, the movable structure is adapted to be fastened together with the frame to fix the at least one substrate in the receiving space.

Abstract: Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device includes a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein. A guard structure is disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region. A portion of the guard structure is disposed within a substrate of the semiconductor chip.

Abstract: A remote play system includes: at least a remote device and a master device wireless coupled to the remote device. The master device includes a touch screen. A browser panel on the touch screen of the master device displays a remote device display region displaying at least a remote device icon which represents the remote device. The browser panel on the touch screen of the master device further displays a file display region displaying at least a file icon which represents a to-be-shared file. In response to a drag-and-drop event triggered on the touch screen, the file icon is dragged and dropped to the remote device icon, and the master device shares the file to the remote device.

Abstract: A method for modifying properties of graphene includes a graphene film provision step and a modification step. In the graphene film provision step, a graphene film is provided, and the graphene is formed on a substrate. In the modification step, the graphene film is placed in a vacuum environment and radiated by an electron beam to obtain a graphene material.

Abstract: Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device comprises a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein. The semiconductor device comprises a guard structure disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region.

Abstract: A thin film apparatus having a plurality of thin film cells is disclosed. Each thin film cell includes a crystalline layer and a surrounding layer. The crystalline layer has a shape of polygon. The surrounding layer is partially located on the crystalline layer. The crystalline layer is surrounded by the surrounding layer.