Abstract: The present disclosure provides a method of semiconductor fabrication that includes forming a semiconductor fin protruding from a substrate, the semiconductor fin including a plurality of first semiconductor layers of a first semiconductor material and second semiconductor layers of a second semiconductor material alternatively stacked, the second semiconductor material being different from the first semiconductor material in composition; forming a first gate stack on the semiconductor fin; forming a recess in the semiconductor fin within a source/drain (S/D) region adjacent to the first gate stack, a sidewall of the first and second semiconductor material layers being exposed within the recess; performing an etching process to the semiconductor fin, resulting in an undercut below the first gate stack; epitaxially growing on the sidewall of the semiconductor fin to fill in the undercut with a semiconductor extended feature of the first semiconductor material; and growing an epitaxial S/D feature from the rece

Abstract: A method includes forming an epitaxy semiconductor layer over a semiconductor substrate, and etching the epitaxy semiconductor layer and the semiconductor substrate to form a semiconductor strip, which includes an upper portion acting as a mandrel, and a lower portion under the mandrel. The upper portion is a remaining portion of the epitaxy semiconductor layer, and the lower portion is a remaining portion of the semiconductor substrate. The method further includes growing a first semiconductor fin starting from a first sidewall of the mandrel, growing a second semiconductor fin starting from a second sidewall of the mandrel. The first sidewall and the second sidewall are opposite sidewalls of the mandrel. A first transistor is formed based on the first semiconductor fin. A second transistor is formed based on the second semiconductor fin.

Abstract: A semiconductor structure is received that has a first and second fins. A first epitaxial feature is formed on the first fin and has a first type dopant. A first capping layer is formed over the first epitaxial feature. A second epitaxial feature is formed on the second fin and has a second type dopant different from the first type dopant. A first metal is deposited on the second epitaxial feature and on the first capping layer. A first silicide layer is formed from the first metal and the second epitaxial feature, and a second capping layer is formed from the first metal and the first capping layer. The second capping layer is selectively removed. A second metal is deposited on the first epitaxial feature and over the second epitaxial feature. A second silicide layer is formed from the second metal and the first epitaxial feature.

Abstract: A semiconductor device according to the present disclosure includes a first isolation feature and a second isolation feature, a fin structure extending lengthwise along a first direction and sandwiched between the first isolation feature and the second isolation feature along a second direction perpendicular to the first direction, a first channel member disposed over the first isolation feature, a second channel member disposed over the second isolation feature, and a gate structure disposed over and wrapping around the first channel member and the second channel member.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first gate stack over a substrate. The substrate has a base and a first fin structure over the base, and the first gate stack wraps around a first upper portion of the first fin structure. The method includes partially removing the first fin structure, which is not covered by the first gate stack. The method includes forming a first mask layer over a first sidewall of the first fin structure. The method includes forming a first stressor over a second sidewall of the first fin structure while the first mask layer covers the first sidewall. The first sidewall is opposite to the second sidewall. The method includes removing the first mask layer. The method includes forming a dielectric layer over the base and the first stressor. The dielectric layer covers the first sidewall.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base portion and a fin portion over the base portion. The semiconductor device structure includes an epitaxial structure over the fin portion. The semiconductor device structure includes a dielectric fin over the base portion. A top surface of the dielectric fin is close to the epitaxial structure. The semiconductor device structure includes a silicide layer wrapping around the epitaxial structure and partially between the dielectric fin and the epitaxial structure. The silicide layer covers a lower surface of the epitaxial structure, and the lower surface is lower than the top surface of the dielectric fin.

Abstract: A semiconductor device having a first region and a second region is provided. The first region has a first protruding structure and a second protruding structure. The second region has a third protruding structure and a fourth protruding structure. First, second, third, and fourth epi-layers are formed on the first, second, third, and fourth protruding structures, respectively. The first and second epi-layers are covered with a first photoresist layer while leaving the third and fourth epi-layers exposed. A dielectric layer is formed over the first photoresist layer and over the third and fourth epi-layers. A portion of the dielectric layer is covered with a second photoresist layer. The portion of the dielectric layer is formed over the third and fourth epi-layers. Portions of the dielectric layer not protected by the first and second photoresist layers are etched. The first and second photoresist layers are removed.

Abstract: A semiconductor structure includes a first fin, which includes a first plurality of suspended nanostructures vertically stacked over one another, each of the first plurality of suspended nanostructure having a center portion that has a first cross section, and a second fin, which includes a second plurality of suspended nanostructures vertically stacked over one another, the first plurality of suspended nanostructures and the second plurality of suspended nanostructures having different material compositions, each of the second plurality of suspended nanostructure having a center portion that has a second cross section, wherein a shape or an area of the first cross section is different from that of the second cross section.

Abstract: A method includes forming a gate stack over a semiconductor region, and forming a first gate spacer on a sidewall of the gate stack. The first gate spacer includes an inner sidewall spacer, and a dummy spacer portion on an outer side of the inner sidewall spacer. The method further includes removing the dummy spacer portion to form a trench, and forming a dielectric layer to seal a portion of the trench as an air gap. The air gap and the inner sidewall spacer in combination form a second gate spacer. A source/drain region is formed to have a portion on an outer side of the second gate spacer.

Abstract: A method includes forming an epitaxy semiconductor layer over a semiconductor substrate, and etching the epitaxy semiconductor layer and the semiconductor substrate to form a semiconductor strip, which includes an upper portion acting as a mandrel, and a lower portion under the mandrel. The upper portion is a remaining portion of the epitaxy semiconductor layer, and the lower portion is a remaining portion of the semiconductor substrate. The method further includes growing a first semiconductor fin starting from a first sidewall of the mandrel, growing a second semiconductor fin starting from a second sidewall of the mandrel. The first sidewall and the second sidewall are opposite sidewalls of the mandrel. A first transistor is formed based on the first semiconductor fin. A second transistor is formed based on the second semiconductor fin.

Abstract: The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate, an isolation structure at least partially surrounding the fin, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, where an extended portion of the epitaxial S/D feature extends over the isolation structure, and a silicide layer disposed on the epitaxial S/D feature, where the silicide layer covers top, bottom, sidewall, front, and back surfaces of the extended portion of the S/D feature.

Abstract: In a method for manufacturing a semiconductor device, a gate structure is formed over a channel layer and an isolation insulating layer. A first sidewall spacer layer is formed on a side surface of the gate structure. A sacrificial layer is formed so that an upper portion of the gate structure with the first sidewall spacer layer is exposed from the sacrificial layer and a bottom portion of the gate structure with the first sidewall spacer layer is embedded in the first sacrificial layer. A space is formed between the bottom portion of the gate structure and the sacrificial layer by removing at least part of the first sidewall spacer layer. After the first sidewall spacer layer is removed, an air gap is formed between the bottom portion of the gate structure and the sacrificial layer by forming a second sidewall spacer layer over the gate structure.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method comprises forming a fin over a substrate, wherein the fin comprises a first semiconductor layer and a second semiconductor layer including different semiconductor materials, and the fin comprises a channel region and a source/drain region; forming a dummy gate structure over the channel region of the fin and over the substrate; etching a portion of the fin in the source/drain region to form a trench therein, wherein a bottom surface of the trench is below a bottom surface of the second semiconductor layer; selectively removing an edge portion of the second semiconductor layer in the channel region such that the second semiconductor layer is recessed; forming a sacrificial structure around the recessed second semiconductor layer and over the bottom surface of the trench; and epitaxially growing a source/drain feature in the source/drain region of the fin.

Abstract: The present disclosure describes an inner spacer structure for a semiconductor device and a method for forming the same. The method for forming the inner spacer structure in the semiconductor device can include forming a vertical structure over a substrate, forming a gate structure over a portion of the vertical structure, exposing sidewalls of the portion of the vertical structure, forming multiple spacers over the sidewalls of the portion of the vertical structure, and forming a void in each of the multiple spacers.

Abstract: Provided are FinFET devices and methods of forming the same. A FinFET device includes a substrate, a first gate strip and a second gate strip. The substrate has at least one first fin in a first region, at least one second fin in a second region and an isolation layer covering lower portions of the first and second fins. The first fin includes a first material layer and a second material layer over the first material layer, and the interface between the first material layer and the second material layer is uneven. The first gate strip is disposed across the first fin. The second gate strip is disposed across the second fin.

Abstract: A method includes forming a gate stack over a semiconductor region, and forming a first gate spacer on a sidewall of the gate stack. The first gate spacer includes an inner sidewall spacer, and a dummy spacer portion on an outer side of the inner sidewall spacer. The method further includes removing the dummy spacer portion to form a trench, and forming a dielectric layer to seal a portion of the trench as an air gap. The air gap and the inner sidewall spacer in combination form a second gate spacer. A source/drain region is formed to have a portion on an outer side of the second gate spacer.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first gate stack over a substrate. The substrate has a base and a first fin structure over the base, and the first gate stack wraps around a first upper portion of the first fin structure. The method includes partially removing the first fin structure, which is not covered by the first gate stack. The method includes forming a first mask layer over a first sidewall of the first fin structure. The method includes forming a first stressor over a second sidewall of the first fin structure while the first mask layer covers the first sidewall. The first sidewall is opposite to the second sidewall. The method includes removing the first mask layer. The method includes forming a dielectric layer over the base and the first stressor. The dielectric layer covers the first sidewall.

Abstract: Methods for manufacturing a semiconductor structure is provided. The method for manufacturing the semiconductor structure includes forming nanowire structures over a substrate and forming a gate structure across nanowire structures. The method for manufacturing the semiconductor structure also includes forming a source/drain structure adjacent to the gate structure and forming a Si layer over the source/drain structure. The method for manufacturing the semiconductor structure also includes forming a SiGe layer over the Si layer and oxidizing the SiGe layer to form an oxide layer. The method for manufacturing the semiconductor structure also includes forming a contact through the Si layer over the source/drain structure.

Abstract: A semiconductor structure includes a semiconductor fin disposed over a substrate, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, a silicide layer disposed over the epitaxial S/D feature, the silicide layer is disposed on sidewalls of the epitaxial S/D feature, a dielectric layer disposed over sidewalls of the silicide layer, and an S/D contact disposed over the epitaxial S/D feature in an interlayer dielectric (ILD) layer.

Abstract: The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate; an isolation structure at least partially surrounding the fin; an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, wherein an extended portion of the epitaxial S/D feature extends over the isolation structure; and a silicide layer disposed on the epitaxial S/D feature, the silicide layer continuously surrounding the extended portion of the epitaxial S/D feature over the isolation structure.