Abstract: Systems, methods, and apparatus including computer-readable mediums for managing open blocks in memory systems such as NAND flash memory devices are provided. In one aspect, a method includes: evaluating a read disturbance level of an open block in a memory, the open block having one or more programmed word lines and one or more blank word lines, and in response to determining that the read disturbance level of the open block is beyond a threshold level, managing each memory cell in at least one of the blank word lines to have a smaller data storing capacity than each memory cell in at least one of the one or more programmed word lines so as to reduce impact of read disturbance.

Abstract: A touch pad structure includes a touch module, a first bracket, a second bracket, and a plurality of linkage rods. The touch module is disposed on the first bracket. The second bracket is surrounding the first bracket and the touch module. A plurality of outer edges of the first bracket faces to a plurality of inner edges of the second bracket respectively. Each of the linkage rods is pivotally connected the outer edge and the inner edge facing to each other, so that the touch module is moved together with the first bracket and relative to the second bracket when the touch module is pressed or released, and the linkage rods have synchronized seesaw motion.

Abstract: Write operation and garbage collection methods are provided for a Solid State Drive (SSD) controller of a SSD having Not-AND (NAND) flash memory devices with on-die Static Random Access Memory (SRAM) and NAND flash memory. In the write operation method, a received block of data is stored in on-die SRAM of the NAND flash device, rather than in on-chip SRAM of the controller, prior to programming into NAND flash memory. Until programmed into NAND flash memory, the block of data remains available in the on-die SRAM to fulfill an ‘immediate read’ operation, if received. In the garbage collection method, blocks of data are read from one or more source NAND flash devices and stored in on-die SRAM of a destination NAND flash device until a limit of such blocks has been reached, then the destination NAND flash device programs the blocks from the on-die SRAM into NAND flash memory.

Abstract: This application provides example methods and systems for supplying power to a device, and example related devices, and relates to the field of energy technologies. One example method includes predicting power load of the device in a first electricity price interval, where the first electricity price interval is a continuous time period in which electricity prices are the same. A power supply policy can then be selected for the device based on the power load of the device in the first electricity price interval, a quantity of stored electric charges of a power storage device at a first moment, and an electricity price at the first moment. Power can then be supplied to the device based on the selected power supply policy.

Abstract: In some implementations, a control device may determine a spacing measurement in a first dimension between a wafer on a susceptor and a pre-heat ring of a semiconductor processing tool and/or a gapping measurement in a second dimension between the wafer and the pre-heat ring, using one or more images captured in situ during a process by at least one optical sensor. Accordingly, the control device may generate a command based on a setting associated with the process being performed by the semiconductor processing tool and the spacing measurement and/or the gapping measurement. The control device may provide the command to at least one motor to move the susceptor.

Abstract: A memory controller managing a memory device receives a memory read command from a host device that is communicably coupled to the memory device. The memory device includes a storage memory comprising a first type of memory cells and a cache memory comprising a second type of memory cells. The memory controller determines, from the memory read command, a physical address of a target memory location in the storage memory indicated by the memory read command. The memory controller executes a read operation on the target memory location corresponding to the physical address. The memory controller determines a read attribute of the target memory location. Conditioned on determining that the read attribute satisfies one or more threshold conditions, the memory controller programs an entry in the cache memory with information corresponding to the target memory location.

Abstract: A hearing device is disclosed, comprising a main microphone, M auxiliary microphones, a transform circuit, a processor, a memory and a post-processing circuit. The transform circuit transforms first sample values in current frames of a main audio signal and M auxiliary audio signals from the microphones into a main and M auxiliary spectral representations. The memory includes instructions to be executed by the processor to perform operations comprising: performing ANC over the first sample values using an end-to-end neural network to generate second sample values; and, performing audio signal processing over the main and the M auxiliary spectral representations using the end-to-end neural network to generate a compensation mask. The post-processing circuit modifies the main spectral representation with the compensation mask to generate a compensated spectral representation, and generates an output audio signal according to the second sample values and the compensated spectral representation.

Abstract: Disclosed are an electrical connection structure and an electronic device including the same. The electrical connection structure includes a first substrate, a first conductive pad, a second substrate, a second conductive pad, a through hole, and a conductive material is provided. The first conductive pad is disposed on the first substrate. The first conductive pad includes a first upper surface. The second conductive pad is disposed on the second substrate. The second conductive pad includes a second upper surface. The through hole penetrates the first substrate and exposes a part of the second upper surface. The conductive material is partially disposed in the through hole. The conductive material includes a narrowest portion and a first contact portion in contact with the second upper surface. A length of the first contact portion is greater than a length of the narrowest portion in a cross-sectional view.

Abstract: A resource scheduling method is provided. The energy storage device pool includes at least one energy storage device. One example method includes: receiving a resource scheduling application request, determining a target energy storage device from the energy storage device pool based on the resource scheduling application request, and allocating an electric power resource to a power consumption device by using the target energy storage device.

Abstract: A method of semiconductor manufacture comprising forming a plurality of first mandrels as the top layer of the multi-layered hard mask and forming a first spacer around each of the plurality of first mandrels. Removing the plurality of first mandrels and cutting the first spacer to form a plurality of second mandrels. Forming a second spacer around each of the plurality of second mandrels and forming a first self-aligned pattern that includes a plurality of third mandrels. Removing the plurality of second mandrels and the second spacer and etching the multi-layered hard mask to transfer the first-self aligned pattern to a lower layer of the multi-layered hard mask. Forming a second self-aligned pattern, wherein the second self-aligned pattern is intermixed with the first self-aligned pattern and etching the first self-aligned pattern and the second self-aligned pattern into the conductive metal layer.

Abstract: A hinge mechanism is provided, including a connecting unit, a hinge unit, and a locking element. The connecting unit has a connecting member and a tubular member. The tubular member is disposed on the connecting member. The hinge unit has a first member, a second member, a shaft, and a rod. The shaft pivotally connects the first member to the second member. The rod is affixed to the second member. The rod extends into the tubular member and has a slot. The locking element is fastened through the tubular member and joined in the slot.

Abstract: An electronic device, including a host, a main display, an auxiliary display, and a lifting mechanism, is provided. The main display is pivoted to the host. The auxiliary display is disposed on the host. The lifting mechanism is disposed between the auxiliary display and the host. The lifting mechanism is configured to lift the auxiliary display and maintain a lifting height of the auxiliary display.

Abstract: A graft polymer is provided, which includes a polymer backbone with a plurality of hydroxy groups, protection group modified histidine grafted onto the side of the polymer backbone, and hydrophilic polymer having terminal reactive group grafted onto the side of the polymer backbone. The graft polymer coating can be applied to metal material to form a composite material, which can be implanted into an organism to reduce adhesion problems.

Abstract: A plug electrical connector including a body and a plurality of cable terminals is provided. The body includes a top surface, two side surfaces opposite to each other, at least one locking slot, and a pair of locking protrusions. The top surface is bordered between the two side surfaces, the locking slot is located on the top surface, and the locking protrusions are located on the side surfaces. The cable terminals penetrate through the body and are arranged between the side surfaces in an axial direction. The plug electrical connector is adapted to be butted to a receptacle electrical connector and is engaged with the receptacle electrical connector with the locking slot and the locking protrusions. A receptacle electrical connector is also provided.

Abstract: A semiconductor structure comprises a plurality of gate structures alternately stacked with a plurality of channel layers, and a plurality of spacers disposed on lateral sides of the plurality gate structures. The respective ones of the plurality of spacers comprise a profile having a first portion comprising a first shape and a second portion comprising a second shape, wherein the first shape is different from the second shape.

Abstract: A device includes: a first dielectric material; a first metal line in the first dielectric material; a second dielectric material disposed on the first dielectric material and the first metal line; a second metal line in the second dielectric material; and a plurality of metal vias disposed on a same level and connecting the first metal line and the second metal line, wherein the plurality of metal vias comprise a first top via and a bottom via having different sidewall profile angles.

Abstract: A semiconductor structure includes a set of mandrel lines and a set of non-mandrel lines disposed on a hardmask in an alternating pattern. Spacers are disposed between adjacent mandrel lines and non-mandrel lines. The spacers include a composition which exhibits an etch rate greater than an etch rate of the mandrel lines and the non-mandrel lines.

Abstract: A computer-implemented method according to one embodiment includes running an initial network on a plurality of images to detect actors pictured therein and body joints of the detected actors. The method further includes running fully-connected networks in parallel, one fully-connected network for each of the detected actors, to reconstruct complete three-dimensional poses of the actors. Sequential model fitting is performed on the plurality of images. The sequential model fitting is based on results of running the initial network and the fully-connected networks. The method further includes determining, based on the sequential model fitting, a locational position for a camera in which the camera has a view of a possible point of collision of two or more of the actors. The camera is instructed to be positioned in the locational position.

Abstract: A method for forming fins includes forming a three-color hardmask fin pattern on a fin base layer. The three-color hardmask fin pattern includes hardmask fins of three mutually selectively etchable compositions. Some of the fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color and that leaves at least one fin of the first color behind. The fins of the second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.

Abstract: Embodiments of the present invention provide computer-implemented methods, computer program products and computer systems. Embodiments of the present invention can, in response to receiving a request, dynamically generate a composite application that includes one or more micro applications based, at least in part, on a user's intention.