Patents by Inventor Chun Wen

Chun Wen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11768170
    Abstract: A biochip including a fluidic substrate having an opening extending completely through the fluidic substrate. The biochip further includes a silicon oxide coating on the fluidic substrate. The biochip further includes a plurality of sidewalls on the fluidic substrate, wherein the plurality of sidewalls defines a channel in fluid communication with the opening, the silicon oxide coating is between adjacent sidewalls of the plurality of sidewalls, and each of the plurality of sidewalls comprises polydimethylsiloxane (PDMS). The biochip further includes a detection substrate spaced from the fluidic substrate.
    Type: Grant
    Filed: April 2, 2021
    Date of Patent: September 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi-Shao Liu, Chun-Ren Cheng, Chun-Wen Cheng
  • Publication number: 20230278856
    Abstract: Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.
    Type: Application
    Filed: May 11, 2023
    Publication date: September 7, 2023
    Inventors: Yu-Chia Liu, Chia-Hua Chu, Chun-Wen Cheng
  • Patent number: 11750980
    Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate; and a membrane over the substrate and configured to generate charges in response to an acoustic wave, the membrane being in a polygonal shape including vertices. The membrane includes a via pattern having first lines that partition the membrane into slices and extend to the vertices of the membrane such that the slices are separated from each other near an anchored region of the membrane and connected to each other around a central region. The via pattern further includes second lines extending from the anchored region of the membrane toward the central region of the membrane. Each of the second lines includes a length less than a length of each of the first lines.
    Type: Grant
    Filed: July 27, 2022
    Date of Patent: September 5, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chun-Wen Cheng, Chun Yin Tsai, Chia-Hua Chu
  • Publication number: 20230271298
    Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.
    Type: Application
    Filed: May 5, 2023
    Publication date: August 31, 2023
    Inventors: Michael Yen, Kao-Feng Liao, Hsin-Ying Ho, Chun-Wen Hsiao, Sheng-Chao Chuang, Ting-Hsun Chang, Fu-Ming Huang, Chun-Chieh Lin, Peng-Chung Jangjian, Ji James Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
  • Publication number: 20230274982
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first fin, a second fin and a third fin therebetween. A first insulating structure includes a first insulating layer formed between the first and third fins, a capping structure covering the first insulating layer, a first insulating liner covering sidewall surfaces of the first insulating layer and the capping structure and a bottom surface of the first insulating layer, and a second insulating liner formed between the first insulating liner and the first fin and between the first insulating liner and the third fin. The second insulating structure includes a second insulating layer formed between the second fin and the third fin and a third insulating liner formed between the second insulating layer and the second fin and between the second insulating layer and the third fin.
    Type: Application
    Filed: May 10, 2023
    Publication date: August 31, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chu-An LEE, Chen-Hao WU, Peng-Chung JANGJIAN, Chun-Wen HSIAO, Teng-Chun TSAI, Huang-Lin CHAO
  • Publication number: 20230257256
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC) including a substrate. A plurality of adhesive structures is disposed on the substrate. A microelectromechanical systems (MEMS) structure is disposed on the adhesive structures. The MEMS structure comprises a movable element disposed within a cavity. A first plurality of stopper bumps is disposed between the movable element and the substrate.
    Type: Application
    Filed: March 9, 2022
    Publication date: August 17, 2023
    Inventors: Wei-Jhih Mao, Shang-Ying Tsai, Kuei-Sung Chang, Chun-Wen Cheng
  • Patent number: 11713242
    Abstract: In some embodiments, a sensor is provided. The sensor includes a microelectromechanical systems (MEMS) substrate disposed over an integrated chip (IC), where the IC defines a lower portion of a first cavity and a lower portion of a second cavity, and where the first cavity has a first operating pressure different than an operating pressure of the second cavity. A cap substrate is disposed over the MEMS substrate, where a first pair of sidewalls of the cap substrate partially define an upper portion of the first cavity, and a second pair of sidewalls of the cap substrate partially define an upper portion of the second cavity. A sensor area comprising a movable portion of the MEMS substrate and a dummy area comprising a fixed portion of the MEMS substrate are both disposed in the first cavity. A pressure enhancement structure is disposed in the dummy area.
    Type: Grant
    Filed: November 11, 2021
    Date of Patent: August 1, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Fei-Lung Lai, Kuei-Sung Chang, Shang-Ying Tsai
  • Patent number: 11703900
    Abstract: A transmitter is provided. the transmitter includes a hybrid feedback circuit and a hybrid driving circuit. The hybrid feedback circuit compares a reference voltage with a feedback voltage in closed-loop, determines whether to perform polarity reversal according to a mode control signal, controls power output according to a comparison result and the mode control signal, and generates a first output signal. The hybrid driving circuit, coupled to the hybrid feedback circuit, receives the first output signal of the hybrid feedback circuit, generates a transmitter output signal according to an input data, and generates a second output signal according to the transmitter output signal. The first output signal and the second output signal are transmitted back to the hybrid feedback circuit.
    Type: Grant
    Filed: December 6, 2021
    Date of Patent: July 18, 2023
    Assignee: Cvitek Co. Ltd.
    Inventors: Chun-Wen Yeh, Ching-Lung Ti, Chia-Chieh Tu
  • Patent number: 11703475
    Abstract: A method includes mounting an integrated electro-microfluidic probe card to a device area on a bio-sensor device wafer, wherein the electro-microfluidic probe card has a first major surface and a second major surface opposite the first major surface. The method further includes electrically connecting at least one electronic probe tip extending from the first major surface to a corresponding conductive area of the device area. The method further includes stamping a test fluid onto the device area. The method further includes measuring via the at least one electronic probe tip a first electrical property of one or more bio-FETs of the device area based on the test fluid.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: July 18, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi-Shao Liu, Fei-Lung Lai, Chun-Ren Cheng, Chun-Wen Cheng
  • Publication number: 20230216186
    Abstract: An antenna module, comprising: a first antenna device, which is an AiM (Antenna in Module) and comprises at least one first antenna; a first FPC (flexible printed circuit), coupled to an outer surface of the first antenna device via a conductive structure; and at least one second antenna device, coupled to the first FPC, comprising at least one second antenna. By this way, an antenna module which can change directions of antennas via simplified structures is provided. Further, an antenna system applying the antenna module is also provided.
    Type: Application
    Filed: December 20, 2022
    Publication date: July 6, 2023
    Applicant: MEDIATEK INC.
    Inventors: Chia-Yen Wei, Jen-Chun Wen
  • Patent number: 11688644
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having adjacent first and second fins protruding from the substrate. A first gate structure and a second gate structure are across the first and second fins, respectively. An insulating structure is formed between the first gate structure and the second gate structure and includes a first insulating layer separating the first fin from the second fin, a capping structure formed in the first insulating layer, and a second insulating layer covered by the first insulating layer and the capping structure.
    Type: Grant
    Filed: April 30, 2021
    Date of Patent: June 27, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chu-An Lee, Chen-Hao Wu, Peng-Chung Jangjian, Chun-Wen Hsiao, Teng-Chun Tsai, Huang-Lin Chao
  • Publication number: 20230192476
    Abstract: A MEMS device includes a first multi-layer structure, a second multi-layer structure over the first multi-layer structure, a first semiconductor layer between the first and second multilayer structures, a first air gap separating the first multi-layer structure and the first semiconductor layer, a second air gap separating the first semiconductor layer and the second multi-layer structure, a plurality of semiconductor pillars, and a plurality of second semiconductor pillars. The first semiconductor pillars are exposed to the first air gap, and coupled to the first semiconductor layer and the first multi-layer structure. The second semiconductor pillars are exposed to the second air gap, and coupled to the first semiconductor layer and the second multi-layer structure.
    Type: Application
    Filed: February 12, 2023
    Publication date: June 22, 2023
    Inventors: CHEN HSIUNG YANG, CHUN-WEN CHENG, CHIA-HUA CHU, EN-CHAN CHEN
  • Patent number: 11679469
    Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: June 20, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Michael Yen, Kao-Feng Liao, Hsin-Ying Ho, Chun-Wen Hsiao, Sheng-Chao Chuang, Ting-Hsun Chang, Fu-Ming Huang, Chun-Chieh Lin, Peng-Chung Jangjian, Ji James Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
  • Publication number: 20230189396
    Abstract: Techniques for converged incident management workflows between private and public safety are provided. A workflow server connected to a network and associated with an enterprise detects that a workflow has been initiated. The workflow includes an action to request a public safety response. A workflow identifier for the workflow that has been initiated is sent to a public safety network. Information associated with the workflow that has been initiated is sent to the public safety network. An indication of capabilities of the public safety response is received. The workflow server creates at least one of a trigger node and an action node associated with the indication of capabilities of the public safety response. At least one existing workflow within the workflow server is modified to include the at least one of the trigger node an action node associated with the indication of capabilities of the public safety response.
    Type: Application
    Filed: December 9, 2021
    Publication date: June 15, 2023
    Inventors: CHUN WEN OOI, WOOI PING TEOH
  • Patent number: 11678133
    Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: June 13, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jung-Huei Peng, Chia-Hua Chu, Chun-Wen Cheng, Chin-Yi Cho, Li-Min Hung, Yao-Te Huang
  • Patent number: 11667517
    Abstract: Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.
    Type: Grant
    Filed: June 22, 2020
    Date of Patent: June 6, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Chia Liu, Chia-Hua Chu, Chun-Wen Cheng
  • Publication number: 20230170256
    Abstract: A method of forming an integrated circuit is described. The method first positions a semiconductor wafer in a processing chamber, and second, laser anneals at least a portion of the semiconductor wafer. The laser annealing includes tracing a first laser beam, in a first path having a first direction, across the at least a portion of the semiconductor wafer, tracing a second laser beam, in a second path having a second direction, opposite to and colinear with the first direction, across the at least a portion of the semiconductor wafer.
    Type: Application
    Filed: November 30, 2021
    Publication date: June 1, 2023
    Inventors: Xiangzheng Bo, Huang-Chun Wen
  • Patent number: 11661333
    Abstract: A semiconductor structure includes a substrate; a sensing device disposed over the substrate and including a plurality of protruding members protruded from the sensing device; a sensing structure disposed adjacent to the sensing device and including a plurality of sensing electrodes protruded from the sensing structure towards the sensing device; and an actuating structure disposed adjacent to the sensing device and configured to provide an electrostatic force on the sensing device based on a feedback from the sensing structure. Further, a method of manufacturing the semiconductor structure is also disclosed.
    Type: Grant
    Filed: October 14, 2020
    Date of Patent: May 30, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Wei-Jhih Mao, Shang-Ying Tsai, Kuei-Sung Chang, Chun-Wen Cheng
  • Patent number: 11660754
    Abstract: A detection system and detection method for the sensors of a robot. A detection system installs three sensors at the motor side and power output terminal of the robot. A detection unit detects the normal or abnormal state of three sensors to index the abnormal sensor for maintenance, and two normal sensors are selected for keeping the robot safety operation without stop.
    Type: Grant
    Filed: January 19, 2021
    Date of Patent: May 30, 2023
    Assignee: TECHMAN ROBOT INC.
    Inventors: Chun-Wen Lai, I-Bing Su
  • Patent number: 11649162
    Abstract: Various embodiments of the present disclosure are directed towards a method for manufacturing a microelectromechanical systems (MEMS) device. The method includes forming a particle filter layer over a carrier substrate. The particle filter layer is patterned while the particle filter layer is disposed on the carrier substrate to define a particle filter in the particle filter layer. A MEMS substrate is bonded to the carrier substrate. A MEMS structure is formed over the MEMS substrate.
    Type: Grant
    Filed: March 5, 2021
    Date of Patent: May 16, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Hua Chu, Chun-Wen Cheng, Wen Cheng Kuo