Abstract: An LED (light emitting diode) includes a base, two spaced electrodes and a thermal conductivity layer. The base has a top surface. The two electrodes and the thermal conductivity layer are located on the top surface of the base. The thermal conductivity layer is attached to the top surface and located beside and between the electrodes. The two electrodes are electrically insulated from each other, and electrically insulated from the thermal conductivity layer. A light emitting chip is electrically connected to the two electrodes. The electrodes and the thermal conductivity layer are on different levels.

Abstract: A touch panel includes a substrate, a transparent sensor electrode pattern, a patterned compensation electrode, a passivation layer, a transparent shielding electrode and at least one connection structure. The substrate has a surface and includes a sensor region and a peripheral region. The transparent sensor electrode pattern is disposed on the surface of the substrate and in the sensor region. The patterned compensation electrode is disposed on the surface of the substrate and in the peripheral region, and the patterned compensation electrode and the transparent sensor electrode pattern are electrically isolated. The passivation layer is disposed on the surface of the substrate, covers the transparent sensor electrode pattern, and at least partially exposes the patterned compensation electrode. The transparent shielding electrode is disposed on the passivation layer.

Abstract: An optical phase modulation module and a projector comprising the same are provided. The optical phase modulation module comprises a transparent thin film with an electro-optic effect, a plurality of first upper electrodes, a plurality of second upper electrodes and a plurality of lower electrodes. The transparent thin film with the electro-optic effect has a top surface and a bottom surface. The first upper electrodes are formed on the top surface. The second upper electrodes are formed on the top surface and arranged alternately with the first upper electrodes. The lower electrodes are formed on the bottom surface. A first voltage difference exists between the first upper electrodes and the bottom electrodes, while a second voltage difference exists between the second upper electrodes and the bottom electrodes. Two different electric fields are produced within the transparent thin film with the electro-optic effect by the first voltage difference and the second voltage difference respectively.

Abstract: In a method for detecting objects by utilizing near infrared (NIR) light and far infrared (FIR) light, an NIR environment image and an FIR environment image generated by photographing a current environment with the NIR light and the FIR light respectively are received. The NIR and FIR environment images are respectively analyzed to obtain several NIR-environment-image analysis values and FIR-environment-image analysis values. A current-environment category is generated according the NIR-environment-image analysis values and the FIR-environment-image analysis values. First object detection information and second object detection information are obtained by respectively performing object-detection onto the NIR environment image and the FIR environment image. Information of at least one detected object in the current environment is obtained according to the current-environment category, the first object detection information and the second object detection information.

Abstract: A light-emitting diode device is disclosed, which comprises a substrate including a first surface; a plurality of light-emitting diode units formed on the first surface, each of the light-emitting diode units including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; and a plurality of conductive connecting structures, spatially separated from each other, wherein one end of one of the plurality of conductive connecting structure is arranged on the second semiconductor layer, directly contacted with the second semiconductor layer, and electrically connected with each other through the second semiconductor layer; wherein another end of the one of the conductive connecting structures is arranged on another light-emitting diode unit, and directly contacted with one of the semiconductor layers of the another light-emitting diode unit.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a semiconductor structure may comprise: a first substrate structure; a III-nitride structure bonded with the first substrate structure; a plurality of air gaps formed between the first substrate structure and the III-nitride structure; and a III-oxide layer formed on surfaces around the air gaps, wherein a portion of the III-nitride structure including surfaces around the air gaps is transformed into the III-oxide layer by a selective photo-enhanced wet oxidation, and the III-oxide layer is formed between an untransformed portion of the III-nitride structure and the first substrate structure.

Abstract: A semiconductor device including a substrate, a metal layer, an insulating layer, a semiconductor layer, a drain and a source is provided. The substrate has a surface and a first cavity. The metal layer is disposed on the substrate and covers the surface and inner-wall of the first cavity to define a second cavity corresponding to the first cavity. The insulating layer covers the metal layer and inner-wall of the second cavity to define a third cavity corresponding to the second cavity. The semiconductor layer exposes out a portion of the insulating layer and covers the inner-wall of the third cavity to define a fourth cavity corresponding to the third cavity. The drain and source are disposed on the semiconductor layer and covers a portion of the semiconductor layer and a portion of the insulating layer, in which the drain and source expose out the fourth cavity.

Abstract: A touch panel including a substrate, a light shielding layer, a touch sensing device layer, a protective layer, and at least one light transmission protrusion is provided. The substrate has a first surface and a second surface opposite to the first surface, wherein the first surface is divided into a visual region and a non-visual region. The light shielding layer is disposed in the non-visual region. The touch sensing device layer is disposed on the first surface of the substrate. The protective layer disposed on the first surface of the substrate covers the light shielding layer and the touch sensing device layer. The light transmission protrusion is disposed on the protective layer, and at least part of the light transmission protrusion is in the non-visual region. A light enters the light transmission protrusion from the second surface. A touch display device and an assembling method thereof are also provided.

Abstract: A method of forming a fin field effect transistor (finFET) device includes forming a silicon fin on a substrate; forming an inner spacer adjacent to a first portion of the silicon fin; forming silicon germanium regions adjacent to a second portion of the silicon fin and the inner spacer; and oxidizing the silicon germanium regions, such that the second portion of the silicon fin that is located adjacent to the silicon germanium regions is converted to a silicon germanium channel region during oxidizing of the silicon germanium regions, and such that the first portion of the silicon fin is protected by the inner spacer during oxidation of the silicon germanium regions, wherein the first portion of the silicon fin comprises a silicon buffer region located between the silicon germanium channel region and a source/drain region of the finFET device.

Abstract: A method, apparatus and computer readable medium for charged particle beam inspection of a sample comprising at least one sampling region and at least one skip region is disclosed. The method, apparatus and computer readable medium comprise receiving an imaging recipe which at least comprises information of the area of the sampling and skip regions; calculating a default stage speed according to the imaging recipe; calculating an alternative stage speed at least according to the default stage speed, the sampling region area information, and the skip region area information; calculating at least one imaging scan compensation offset at least according to the alternative stage speed; and inspecting the sample at the alternative stage speed while adjusting the motion of the charged particle beam according to the imaging scan compensation offsets, such that the charged particle beam tightly follows the motion of the stage and images only the sampling regions on the sample.

Abstract: Disclosed herein is a thin film transistor. The thin film transistor is characterized in having a source interconnect layer and a drain interconnect layer. The source electrode and the drain electrode are respectively disposed above and in contact with the source interconnect layer and the drain interconnect layer. The semiconductor layer is in contact with both the source interconnect layer and the drain interconnect layer, but is not in contact with the source electrode and the drain electrode.

Abstract: A court border module using a display apparatus is disclosed, which uses piezoelectric elements to drive the display apparatus. When a ball hits a court border, which is defined by the display apparatus, a force is applied to the piezoelectric elements which then generate power to drive the corresponding part of the display apparatus. The color of the part of the display apparatus hit by the ball is switched. Therefore the change in the color of the court border can be observed by officials and others to instantly and objectively determine whether the ball has hit the court border.

Abstract: A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

Abstract: A thin film transistor suitable for being disposed on a substrate is provided. The thin film transistor includes a gate electrode, an organic gate dielectric layer, a metal oxide semiconductor layer, a source electrode and a drain electrode. The gate electrode is disposed on the substrate. The organic gate dielectric layer is disposed on the substrate to cover the gate electrode. The source electrode, the drain electrode and the metal oxide semiconductor layer are disposed above the organic gate dielectric layer, and the metal oxide semiconductor layer contacts with the source electrode and the drain electrode. Because the channel layer of the thin film transistor is a layer of metal oxide semiconductor formed at a lower temperature, thus the thin film transistor can be widely applied into various display applications such as flexible display devices.

Abstract: Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.

Abstract: An exemplary method for manufacturing a circuit board includes, firstly, providing a substrate made of heat conductive, electrically insulative material. Then a copper layer is formed on the substrate. After that, nickel is plated on the copper layer to form a nickel layer. Finally, gold is and plated on the nickel layer to form a gold layer.

Abstract: A flexible display and a controlling method thereof are provided. The flexible display includes a plurality of pressure sensors, a display unit and a processing unit, wherein the processing unit is connected to the pressure sensors and the display unit. The processing unit obtains pressure values from each of the pressure sensors within a time unit and generates a pressure area and a pressure variance according to the pressure values from each of the pressure sensors. The processing unit further determines a display mode of the display unit according to the pressure area and the pressure variance. Therefore, the flexible display is capable of providing several kinds of display mode only based on the equipped pressure sensors.

Abstract: A lamp assembly comprises a lamp body, a bracket, and a securing member. The lamp body comprises a leg. The lamp body is arranged on the bracket. The securing member is mounted on the bracket and capable of moving relative to the bracket to press or away from the leg of the lamp body to achieve an assembly of the lamp body to the bracket or a disassembly of the lamp body from the bracket. The lamp body includes a plurality of light emitting diodes as a light source.

Abstract: A three-dimension circuit structure includes a substrate, a first conductive layer, a filled material and a second conductive layer. The substrate has an upper surface and a cavity located at the upper surface. The first conductive layer covers the inside walls of the cavity and protrudes out the upper surface. The filled material fills the cavity and covers the first conductive layer. The second conductive layer covers the filled material and a portion of the first conductive layer, and the first conductive layer and the second conductive layer encapsulate the filled material. The material of the filled material is different from that of the first conductive layer and the second conductive layer.