Abstract: Disclosed is a negative electrode material and a preparation method therefor. The negative electrode material is a core-shell structure, and comprises a core layer formed by hard carbon, and a first carbonized layer, a carbon powder layer and a second carbonized layer which are sequentially coated at the outer side of the core layer. Further disclosed are a negative electrode plate prepared by the negative electrode material, and a sodium ion battery. The negative electrode material of the present disclosure can effectively improve the conductivity of a hard carbon material, thereby facilitating improvement of the performance such as initial Coulombic efficiency and cycle life of the sodium ion battery.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes channel structures in a first region, word line pick-up structures in a dielectric portion of a second region, and word lines each extending in the first region and a conductive portion of the second region. The first region and the second region are arranged in a first direction. The dielectric portion and the conductive portion of the second region are arranged in a second direction perpendicular to the first direction. The word lines are discontinuous in the dielectric portion of the second region and are electrically connected to the word line pick-up structures, respectively.

Abstract: In certain aspects, a method for forming a three-dimensional (3D) memory device is disclosed. A stack structure including interleaved first dielectric layers and second dielectric layers is formed. Channel structures extending through the first dielectric layers and the second dielectric layers in a first region of the stack structure are formed. All the second dielectric layers in the first region and parts of the second dielectric layers in a second region of the stack structure are replaced with conductive layers. Word line pick-up structures extending through the first dielectric layers and remainders of the second dielectric layers in the second region of the stack structure are formed at different depths, such that the word line pick-up structures are electrically connected to the conductive layers, respectively, in the second region of the stack structure.

Abstract: A holographic 3D display system based on virtual array splicing of a spatial light modulator includes a laser configured to generate a coherent light beam, first, second and third beam splitters, first and second reflectors, a shutter array, a spatial filter array, a solid lens, first and second light beam deflection elements and a spatial light modulator. The first and second beam splitters and the first reflector are configured to split the light beam generated by the laser into three parallel light beams to irradiate the shutter array. The shutter array is configured to control the three parallel light beams to sequentially pass therethrough according to a set time sequence. The three parallel light beams passing through the shutter array are expanded and collimated by the spatial filter array and the solid lens to form three parallel light beams with the same size and uniform intensity.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes channel structures in a first region and word line pick-up structures in a first portion of a second region. The first region and the second region are arranged in a first direction. The 3D memory device also includes word lines each extending in the first region and a second portion of the second region. The first portion and the second portion of the second region are arranged in a second direction perpendicular to the first direction. The 3D memory device also includes dummy channel structures in the second portion of the second region. Adjacent channel structures are spaced apart from each other by a first distance. Adjacent dummy channel structures are spaced apart from each other by a second distance that is smaller than the first distance.

Abstract: Disclosed in the present invention is hyperspectral image classification method based on context-rich networks. The method comprises a training stage and a prediction stage, wherein the training stage comprises image pre-processing, sample selection and network training. Firstly, performing normalization on a hyperspectral image, and then randomly selecting an appropriate proportion of marked samples from each category to generate a label map, and performing training by using the designed network; in the prediction stage, directly inputting the whole image into the trained network and obtaining a final classification result. By means of the present invention, data pre-processing, feature extraction, the process of context-rich information capturing, and classification are taken into comprehensive consideration in the whole flow; and the classification of a hyperspectral image is realized by means of constructing an end-to-end network.

Abstract: A multi-resistance-state spintronic device, including: a top electrode and a bottom electrode respectively connected to a read-write circuit; and a magnetic tunnel junction between two electrodes. The magnetic tunnel junction includes from top to bottom: a ferromagnetic reference layer, a barrier tunneling layer, a ferromagnetic free layer, and a spin-orbit coupling layer. Nucleation centers are provided at two ends of the ferromagnetic free layer to generate a magnetic domain wall; the spin-orbit coupling layer is connected to the bottom electrode, and when a write pulse is applied, an electron spin current is generated and drives the magnetic domain wall through a spin-orbit torque to move; a plurality of local magnetic domain wall pinning centers are provided at an interface between the spin-orbit coupling layer and the ferromagnetic free layer to enhance a strength of a DM interaction constant between interfaces.

Abstract: The disclosure relates to the technical field of batteries, and discloses a cathode material and a preparation method thereof, a cathode plate and an O3-type layered sodium ion battery. The chemical formula of the cathode material is NaM1-x-y-zNixFeyMnzO2, wherein M comprises a first metal element, and the first metal element has at least one f electron orbital. Ni, Fe and Mn elements in the cathode material are elements containing a d electron orbital. By doping the element M, on the one hand, the f electron orbital and the d electron orbitals are mutually entangled, properties of the cathode material are synergistically improved, so that the structure and air stability of the material are improved; and on the other hand, interaction of all elements in the material can be facilitated, so that ions can move away from original positions to generate vacancies, ion diffusion channels of sodium ions are enlarged, and the rate capability of the material is improved.

Abstract: The three-state spintronic device includes: a bottom electrode, a magnetic tunnel junction and a top electrode from bottom to top. The magnetic tunnel junction includes: a spin-orbit coupling layer, a ferromagnetic free layer, a barrier tunneling layer, a ferromagnetic reference layer, three local magnetic domain wall pinning centers and domain wall nucleation centers. An antisymmetric exchange interaction is modulated, and the magnetic domain wall pinning centers are embedded in an interface between a heavy metal and the ferromagnetic free layer. The magnetic domain wall nucleation centers are at two ends of the ferromagnetic free layer. A current pulse flows through the spin-orbit coupling layer to generate a spin current and the spin current is injected into the ferromagnetic free layer. Under a control of all-electrical controlled, an effective field of a spin-orbit torque drives domain wall to move and displace.

Abstract: This application relates to a patterning material, a patterning composition, and a pattern forming method. The patterning material in this application includes a metal-oxygen cluster framework, a radiation-sensitive organic ligand, and a second ligand. The radiation-sensitive organic ligand coordinates with a metal M through a coordination atom. The coordination atom is at least one of: an oxygen atom, a sulfur atom, a selenium atom, a nitrogen atom, or a phosphorus atom. The radiation-sensitive organic ligand is a monodentate ligand or a polydentate ligand with a denticity of two or more. The second ligand is an inorganic ion or a coordination group.

Abstract: A memory device includes a semiconductor substrate, a first continuous floating gate structure, a dielectric layer, and a control gate electrode. The semiconductor substrate has a first active region. The first continuous floating gate structure is over the first active region of the semiconductor substrate, wherein the first continuous floating gate structure has first and second inner sidewalls facing each other. The dielectric layer has a first portion extending along the first inner sidewall of the first continuous floating gate structure and a second portion extending along the second inner sidewall of the first continuous floating gate structure. The control gate electrode is over the dielectric layer. The control gate electrode is in contact with the first and second portions of the dielectric layer.

Abstract: Provided is a spintronic device, a memory cell, a memory array, and a read and write circuit applied in a field of integration technology. The spintronic device includes: a bottom electrode; a spin orbit coupling layer, arranged on the bottom electrode; at least one pair of magnetic tunnel junctions, arranged on the spin orbit coupling layer, wherein each of the magnetic tunnel junctions includes a free layer, a tunneling layer, and a reference layer arranged sequentially from bottom to top, and wherein magnetization directions of reference layers of two magnetic tunnel junctions of each pair of the magnetic tunnel junctions are opposite; and a top electrode, arranged on a reference layer of each of the magnetic tunnel junctions.

Abstract: A tunable-liquid-crystal-grating-based holographic true 3D display system comprises a laser, a filter, a beam expander, a semi-transparent semi-reflective mirror, a spatial light modulator, a lens I, a diaphragm, a tunable liquid crystal grating, a polaroid, a signal controller, a lens II and a receiving screen. The laser, the filter and the beam expander are used for generating collimated incident light. The spatial light modulator is loaded with a hologram of a 3D object. The diaphragm is positioned behind the lens I for eliminating a high-order diffracted light in the holographic true 3D display. The tunable liquid crystal grating is located on the back focal plane of the lens I and on the front focal plane of the lens II, and the signal controller is used for synchronously controlling the voltage of the tunable liquid crystal grating and the generation and loading of the hologram.

Abstract: The present disclosure provides a displacement detection circuit of a maglev rotor system and a displacement self-sensing system thereof.

Abstract: Systems and methods include connecting to and authenticating a plurality of user devices; utilizing a plurality of RESTful (Representational State Transfer web service) endpoints to communicate with the plurality of user devices; providing any of policy and configuration to the plurality of user devices utilizing version number via a RESTful endpoint; caching the any of policy and configuration for each device of the plurality of user devices; and receiving metrics based on measurements at the plurality of user devices according to corresponding policy and configuration, via a RESTful endpoint.

Abstract: Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a stack structure and a contact structure. The stack structure comprises interleaved gate layers and insulating layers. The contact structure comprises a conductive structure and one or more insulating structures. The conductive structure can extend through the stack structure and form a conductive connection with one of the gate layers. The one or more insulating structures surround the conductive structure and electrically isolate the conductive structure from remaining ones of the gate layers. The one or more insulating structures further include one or more first insulating structures. Each of the one or more first insulating structures is disposed between an adjacent pair of the insulating layers, and the one or more first insulating structures are disposed on a first side of the one of the gate layers.

Abstract: A method for training a three-dimensional face reconstruction model includes inputting an acquired sample face image into a three-dimensional face reconstruction model to obtain a coordinate transformation parameter and a face parameter of the sample face image; determining the three-dimensional stylized face image of the sample face image according to the face parameter of the sample face image and the acquired stylized face map of the sample face image; transforming the three-dimensional stylized face image of the sample face image into a camera coordinate system based on the coordinate transformation parameter, and rendering the transformed three-dimensional stylized face image to obtain a rendered map; and training the three-dimensional face reconstruction model according to the rendered map and the stylized face map of the sample face image.

Abstract: A three-dimensional (3D) memory device includes interleaved conductive layers and dielectric layers. Edges of the conductive layers and dielectric layers define a plurality of stairs. The 3D memory device also includes a plurality of landing structures each over a respective conductive layer at a respective stair. Each of the landing structures includes a first layer having a first material and a second layer having a second material, the first layer being over the second layer.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes a stack structure, and a slit structure extending. The stack structure includes interleaved conductive layers and dielectric layers. Edges of the interleaved conductive layers and dielectric layers define a staircase structure. Each one of the conductive layers has a thickened portion in the staircase structure. The thickened portion extends along a first direction. The slit structure extends through the stack structure and along a second direction perpendicular to the first direction, such that the slit structure cuts off at least one, but not all, of the thickened portions of the conductive layers.

Abstract: A three-dimensional (3D) memory device includes a plurality of memory planes and a separation block. Each memory plane includes a plurality of memory blocks. Each memory block includes a memory stack including interleaved conductive layers and first dielectric layers, and a plurality of channel structures each extending through the memory stack. The separation block extending laterally to separate each two adjacent memory planes. Each separation block includes a dielectric stack including interleaved second dielectric layers and the first dielectric layers. The first dielectric layers extend across the memory blocks and the separation block, and the second dielectric layers separate the conductive layers of two adjacent memory blocks.