Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates, As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.

Abstract: Metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

Abstract: A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.

Abstract: A substrate processing apparatus includes a substrate loading device configured to load a substrate in a predetermined orientation relative to a grid, having a X-axis and an orthogonal Y-axis, associated with a layout of fields on the substrate; and corrective elements configured to enable local correction of a characteristic of a process performed on a substrate, wherein the corrective elements are arranged along at least one axis having a direction other than parallel to the X-axis or the Y-axis of the grid.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.

Abstract: A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.

Abstract: A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method including: obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.

Abstract: A method of characterizing distortions in a lithographic process, and associated apparatuses. The method includes obtaining measurement data corresponding to a plurality of measurement locations on a substrate, the measurement data comprising measurements performed on a plurality of substrates, and comprising one or more measurements performed on one or more of the substrates for each of the measurement locations. For each of the measurement locations, a first quality value representing a quality metric and a noise value representing a noise metric is determined from the measurements performed at that measurement location. A plurality of distortion parameters is determined, each distortion parameter configured to characterize a systematic distortion in the quality metric and a statistical significance of the distortion parameters from the first quality value and from the noise value is determined. Systematic distortion is parameterized from the distortion parameters determined to be statistically significant.

Abstract: A method including: obtaining information regarding a patterning error in a patterning process involving a patterning device; determining a nonlinearity over a period of time introduced by modifying the patterning error by a modification apparatus according to the patterning error information; and determining a patterning error offset for use with the modification apparatus based on the determined nonlinearity.

Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

Abstract: A method of monitoring a device manufacturing process, the method including; obtaining an estimated time variation of a process parameter; determining, on the basis of the estimated time variation, a sampling plan for measurements to be performed on a plurality of substrates to obtain information about the process parameter; measuring substrates in accordance with the sampling plan to obtain a plurality of measurements; and determining an actual time variation of the process parameter on the basis of the measurements.

Abstract: Disclosed is a method of measuring a target, associated substrate comprising a target and computer program. The target comprises overlapping first and second periodic structures. The method comprising illuminating the target with measurement radiation and detecting the resultant scattered radiation. The pitch of the second periodic structure is such, relative to a wavelength of the measurement radiation and its angle of incidence on the target, that there is no propagative non-zeroth diffraction at the second periodic structure resultant from said measurement radiation being initially incident on said second periodic structure. There may be propagative non-zeroth diffraction at the second periodic structure which comprises further diffraction of one or more non-zero diffraction orders resultant from diffraction by the first periodic structure.

Abstract: A method of displaying a plurality of graphical user interface elements, each graphical user interface element representing a step in a measurement design, setup and/or monitoring process and each graphical user interface element enabling access by the user to further steps in the measurement design, setup and/or monitoring process for the associated step of the graphical user interface element, and displaying an indicator associated with one or more of the plurality of graphical user elements, the indicator indicating that a step in the measurement design, setup and/or monitoring process is not completed and/or that a key performance indicator associated with a step in the measurement design, setup and/or monitoring process has passed a threshold.

Abstract: A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.

Abstract: A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.

Abstract: A method of determining a measurement subset of metrology point locations which includes a subset of potential metrology point locations on a substrate. The method including identifying a plurality of candidate metrology point locations from the potential metrology point locations. A change in the level of informativity imparted by the measurement subset of metrology point locations which is attributable to the inclusion of that candidate metrology point location into the measurement subset of metrology point locations is evaluated for each of the candidate metrology point locations. The candidate metrology point locations which have the greatest increase in the level of informativity attributed thereto are selected for inclusion into the measurement subset of metrology point locations.

Abstract: Disclosed is a method of measuring a target, associated substrate comprising a target and computer program. The target comprises overlapping first and second periodic structures. The method comprising illuminating the target with measurement radiation and detecting the resultant scattered radiation. The pitch of the second periodic structure is such, relative to a wavelength of the measurement radiation and its angle of incidence on the target, that there is no propagative non-zeroth diffraction at the second periodic structure resultant from said measurement radiation being initially incident on said second periodic structure. There may be propagative non-zeroth diffraction at the second periodic structure which comprises further diffraction of one or more non-zero diffraction orders resultant from diffraction by the first periodic structure.

Abstract: Metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.