Patents by Inventor Everhardus Cornelis Mos

Everhardus Cornelis Mos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8706442
    Abstract: A lithographic system includes a lithographic apparatus comprising a projection system which projects a patterned radiation beam onto a target portion of a substrate and an alignment system which measures the position of a feature of the pattern on the substrate at a number of locations over the substrate. A controller compares the measured positions with points on a grid of values and extrapolates values for intermediate positions on the substrate based on values of corresponding intermediate points on the grid, so as to provide an indication of the intermediate positions on the substrate and their displacements relative to the grid. The grid is based on at least one orthogonal basis function, the measurement on the substrate being performed at positions corresponding to the root values of the at least one orthogonal basis function.
    Type: Grant
    Filed: July 3, 2009
    Date of Patent: April 22, 2014
    Assignee: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Henricus Johannes Lambertus Megens, Maurits Van Der Schaar, Hubertus Johannes Gertrudus Simons, Scott Anderson Middlebrooks
  • Publication number: 20140089870
    Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.
    Type: Application
    Filed: August 9, 2013
    Publication date: March 27, 2014
    Applicant: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis MOS, Hubertus Johannes Gertrudus Simons, Peter Ten Berge, Nicole Schoumans, Michael Kubis, Paul Cornelis Hubertus Aben
  • Patent number: 8612045
    Abstract: Variables in each step in a double patterning lithographic process are recorded and characteristics of intermediate features in a double patterning process measured. The final feature is then modeled, and the values of the variables optimized.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: December 17, 2013
    Assignees: ASML Holding N.V., ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Mircea Dusa, Jozef Maria Finders, Christianus Gerardus Maria De Mol, Scott Anderson Middlebrooks, Dongzi Wangli
  • Patent number: 8504333
    Abstract: A method for selecting sample positions on a substrate from a set of all available sample positions is provided, in which a representation of a model, which may represent the variation of one or more properties across the substrate, is analyzed in order to identify the sample positions having the greatest effect on the model.
    Type: Grant
    Filed: June 16, 2010
    Date of Patent: August 6, 2013
    Assignee: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Hubertus Johannes Gertrudus Simons, Scott Anderson Middlebrooks
  • Patent number: 8497976
    Abstract: A method and apparatus for measurement of a characteristic of a substrate. A target is present on the substrate and a measurement is performed during a scanning movement of the substrate. The scanning movement of the substrate is a linear movement and the measurement includes obtaining a reflected image of the target using a pulsed light source, the duration of a single light pulse being less than 100 psec. A lithographic apparatus includes such a measurement apparatus, and a device manufacturing method includes such a measurement method.
    Type: Grant
    Filed: October 6, 2009
    Date of Patent: July 30, 2013
    Assignee: ASML Netherlands B.V.
    Inventors: Wilhelmus Maria Corbeij, Arie Jeffrey Den Boef, Everhardus Cornelis Mos
  • Patent number: 8264664
    Abstract: A method of producing a marker on a substrate includes projecting a patterned beam on a layer of resist disposed on a substrate in a lithographic apparatus to create a latent marker; and locally heating the substrate at the marker location in the lithographic apparatus to transform the latent marker into a detectable marker.
    Type: Grant
    Filed: November 12, 2008
    Date of Patent: September 11, 2012
    Assignee: ASML Netherlands B.V.
    Inventors: Maurits Van Der Schaar, Jacobus Burghoorn, Richard Johannes Franciscus Van Haren, Everhardus Cornelis Mos, Rene Monshouwer
  • Patent number: 8264686
    Abstract: A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes a reference set of gratings provided in the substrate, the reference set including two reference gratings having line elements in a first direction and one reference grating having line elements in a second, perpendicular, direction. A measurement set of gratings is provided on top of the reference set of gratings, the measurement set comprising three measurement gratings similar to the reference gratings. Two of the measurement gratings are oppositely biased in the second direction relative to the respective reference gratings. An overlay measurement device is provided to measure asymmetry of the three gratings in the reference set and the measurement set, and to derive from the measured asymmetry the overlay in both the first and second direction.
    Type: Grant
    Filed: February 23, 2009
    Date of Patent: September 11, 2012
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Everhardus Cornelis Mos, Maurits Van Der Schaar, Stefan Carolus Jacobus Antonius Keij
  • Patent number: 8248579
    Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region.
    Type: Grant
    Filed: November 30, 2007
    Date of Patent: August 21, 2012
    Assignee: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Maurits Van Der Schaar, Hubertus Johannes Gertrudus Simons
  • Patent number: 8237914
    Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region, hereby reducing the intra-field overlay errors.
    Type: Grant
    Filed: December 3, 2007
    Date of Patent: August 7, 2012
    Assignee: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Maurits Van Der Schaar, Hubertus Johannes Gertrudus Simons
  • Publication number: 20120059505
    Abstract: A higher-level controller can correct measured metrology data with residual error values as reported by a lower-level controller. This results in a more accurate process disturbance estimate. A method of control obtains, based on measurement sample definition, a first process variable of a system under control, determines a residual error using the first process variable and a first set point, controls the system using the residual error, obtains, based on the same sample definition, a second process variable, and adjusts the second process variable using the residual error. The method may also include determining, using the adjusted second process variable, one or more first set points for controlling the system by the low-level controller that may vary in correspondence with the sample definition.
    Type: Application
    Filed: March 8, 2011
    Publication date: March 8, 2012
    Applicant: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Birgitt Noëlle Cornelia Liduine Hepp, Jasper Thijs Menger
  • Publication number: 20120033193
    Abstract: An inspection apparatus measures a property of a substrate including a periodic structure. An illumination system provides a beam of radiation with an illumination profile including a plurality of illuminated portions. A radiation projector projects the beam of radiation onto the substrate. A detector detects radiation scattered from the periodic structure and separately detects first order diffracted radiation and at least one higher order of diffracted radiation of each of the illuminated portions. A processor determines the property of the substrate from the detected radiation. The plurality of illuminated portions are arranged such that first order diffracted radiation arising from one or more of the illuminated portions are not overlapped by zeroth order or first order diffracted radiation arising from any other of the illuminated portions.
    Type: Application
    Filed: July 20, 2011
    Publication date: February 9, 2012
    Applicant: ASML Netherlands B.V.
    Inventors: Maurits VAN DER SCHAAR, Arie Jeffrey Den Boef, Everhardus Cornelis Mos, Andreas Fuchs, Martyn John Coogans, Hendrik Jan Hidde Smilde
  • Patent number: 8111398
    Abstract: According to an example, a first layer of a substrate comprises a plurality of gratings having a periodicity P. A second layer of the substrate comprises a plurality of gratings, overlapping with the first set of gratings, and having a periodicity of NP, where N is an integer greater than 2. A first set of gratings has a bias of +d and the second set of gratings has a bias of ?d. A beam of radiation is projected onto the gratings and the angle resolved spectrum of the reflected radiation detected. The overlay error is then calculated using the angle resolved spectrum of the reflected radiation.
    Type: Grant
    Filed: April 29, 2010
    Date of Patent: February 7, 2012
    Assignee: ASML Netherlands B.V.
    Inventors: Maurits Van der Schaar, Arie Jeffrey Den Boef, Everhardus Cornelis Mos
  • Publication number: 20110299050
    Abstract: A lithographic system includes a lithographic apparatus and a scatterometer. In an embodiment, the lithographic apparatus includes an illumination optical system arranged to illuminate a pattern and a projection optical system arranged to project an image of the pattern on to a substrate. In an embodiment, the scatterometer includes a measurement system arranged to direct a beam of radiation onto a target pattern on said substrate and to obtain an image of a pupil plane representative of radiation scattered from the target pattern. A computational arrangement represents the pupil plane by moment functions calculated from a pair of orthogonal basis function and correlates the moment function to lithographic feature parameters to build a lithographic system identification. A control arrangement uses the system identification to control subsequent lithographic processes performed by the lithographic apparatus.
    Type: Application
    Filed: September 17, 2009
    Publication date: December 8, 2011
    Applicant: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Maurits Van Der Schaar, Scott Anderson Middlebrooks
  • Patent number: 8064056
    Abstract: A substrate includes an overlay target. The overlay target can include two superposed layers. Each of the two superposed layers includes two gratings with a different pitch from each other.
    Type: Grant
    Filed: January 20, 2011
    Date of Patent: November 22, 2011
    Assignee: ASML Netherlands B.V.
    Inventors: Maurits Van Der Schaar, Arie Jeffrey Den Boef, Everhardus Cornelis Mos, Stefan Carolus Jacobus Antonius Keij
  • Patent number: 7969577
    Abstract: When using a scatterometer different portions of a target area may be at different focal depths. When the whole area is measured this results in part of it being out of focus. To compensate for this an array of lenses is placed in the back focal plane of the high numerical aperture lens.
    Type: Grant
    Filed: September 14, 2006
    Date of Patent: June 28, 2011
    Assignee: ASML Netherlands B.V.
    Inventors: Roy Werkman, Everhardus Cornelis Mos, Maurits Van Der Schaar
  • Publication number: 20110122496
    Abstract: A substrate includes an overlay target. The overlay target can include two superposed layers. Each of the two superposed layers includes two gratings with a different pitch from each other.
    Type: Application
    Filed: January 20, 2011
    Publication date: May 26, 2011
    Applicant: ASML Netherlands B.V.
    Inventors: Maurits VAN DER SCHAAR, Arie Jeffrey DEN BOEF, Everhardus Cornelis MOS, Stefan Carolus Jacobus Antonius KEIJ
  • Patent number: 7898662
    Abstract: An overlay target on a substrate includes two sets of gratings; the first set having a pitch P1 and the second set having a pitch P2 and each set including a grating with an orientation substantially perpendicular to the first grating of each set. When a layer of resist is to be aligned with the layer below it, the same overlay marks are provided on the upper layer and the relative positions of the overlay targets on the upper layer and the lower layer are compared by shining an overlay beam on to the overlay targets and measuring the diffraction spectrum of the reflected beam. Having two sets of overlay targets with different pitches in gratings enables the measurement of overlay errors that are greater than the pitch of either one of the overlay gratings.
    Type: Grant
    Filed: June 20, 2006
    Date of Patent: March 1, 2011
    Assignee: ASML Netherlands B.V.
    Inventors: Maurits Van Der Schaar, Arie Jeffrey Den Boef, Everhardus Cornelis Mos, Stefan Carolus Jacobus Antonius Keij
  • Patent number: 7894063
    Abstract: A method includes determining relative positional relationships between applied fields on a substrate, one of the applied fields including a first field; in a lithographic apparatus, using an alignment apparatus to obtain at least one absolute positional relationship between the position of at least the first field of the substrate and a part of the lithographic apparatus; and determining an absolute positional relationship between at least one field, other than the first field, and a part of the lithographic apparatus using the relative positional relationships and the at least one obtained absolute relationship.
    Type: Grant
    Filed: October 27, 2008
    Date of Patent: February 22, 2011
    Assignee: ASML Netherland B.V.
    Inventors: Franciscus Bernardus Maria Van Bilsen, Everhardus Cornelis Mos
  • Publication number: 20110010000
    Abstract: A method for selecting sample positions on a substrate from a set of all available sample positions is provided, in which a representation of a model, which may represent the variation of one or more properties across the substrate, is analyzed in order to identify the sample positions having the greatest effect on the model.
    Type: Application
    Filed: June 16, 2010
    Publication date: January 13, 2011
    Applicant: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Hubertus Johannes Gertrudus Simons, Scott Anderson Middlebrooks
  • Publication number: 20100323461
    Abstract: A method is described for obtaining information for use in modeling of a lithographic process. A pattern feature is formed on a target portion of a substrate by projecting a beam of radiation onto the target portion of the substrate. For that target portion the lithographic process is characterized by one or both of a first property that varies in a first direction along a surface of the substrate, and a second property that varies in a second direction along a surface of the substrate. A property of the pattern feature is measured. Using the measured property of the pattern feature and at least one of the first and second properties, information is obtained for use in modeling the process. The lithographic process may be or include the projection of the beam of radiation onto the surface of the substrate.
    Type: Application
    Filed: May 25, 2010
    Publication date: December 23, 2010
    Applicant: ASML Netherlands B.V.
    Inventors: Nicole Schoumans, Everhardus Cornelis Mos, Birgitt Noëlle Cornelia Liduine Hepp, Remco Jochem Sebastiaan Groenendijk