Patents by Inventor Everhardus Cornelis Mos

Everhardus Cornelis Mos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100277706
    Abstract: According to an example, a first layer of a substrate comprises a plurality of gratings having a periodicity P. A second layer of the substrate comprises a plurality of gratings, overlapping with the first set of gratings, and having a periodicity of NP, where N is an integer greater than 2. A first set of gratings has a bias of +d and the second set of gratings has a bias of ?d. A beam of radiation is projected onto the gratings and the angle resolved spectrum of the reflected radiation detected. The overlay error is then calculated using the angle resolved spectrum of the reflected radiation.
    Type: Application
    Filed: April 29, 2010
    Publication date: November 4, 2010
    Applicant: ASML Netherlands B.V.
    Inventors: Maurits Van der Schaar, Arie Jeffrey Den Boef, Everhardus Cornelis Mos
  • Patent number: 7821650
    Abstract: In a device manufacturing method and a metrology apparatus, metrology measurements are executed using radiation having a first wavelength. Subsequently a grid of conducting material is applied on the substrate, the grid having grid openings which in a first direction in the plane of the grid are smaller than the first wavelength. The space in the scribe lane where the measurement target was, is now shielded and may be used again in further layers or processing steps of the substrate.
    Type: Grant
    Filed: June 18, 2008
    Date of Patent: October 26, 2010
    Assignee: ASML Netherlands B.V.
    Inventors: Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Everhardus Cornelis Mos
  • Publication number: 20100161099
    Abstract: Variables in each step in a double patterning lithographic process are recorded and characteristics of intermediate features in a double patterning process measured. The final feature is then modeled, and the values of the variables optimized.
    Type: Application
    Filed: December 8, 2009
    Publication date: June 24, 2010
    Applicant: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Mircea Dusa, Jozef Maria Finders, Christianus Gerardus Maria De Mol, Scott Anderson Middlebrooks, Dongzi Wangli
  • Patent number: 7724370
    Abstract: Each target used in a method of measuring overlay using a scatterometer includes a first portion and a second portion, the first portion has features varying only in a first direction and the second portion has features only varying in a second direction. The first and second directions are orthogonal, thus eliminating cross talk between the directions, and improving the accuracy of overlay error calculations.
    Type: Grant
    Filed: March 1, 2007
    Date of Patent: May 25, 2010
    Assignee: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Arie Jeffrey Den Boef, Maurits Van Der Schaar
  • Patent number: 7710572
    Abstract: A fault detection and classification method is disclosed that uses raw back-focal-plane image data of radiation from a substrate surface, detected by a scatterometer detector, to determine a variation in the raw data and correlate the variation in the raw data with a possible fault in a lithographic apparatus or a process that patterned the substrate surface. The correlation is carried out by comparing the variation in the raw data with known metrology data. Once a fault has been determined, a user may be notified of the fault.
    Type: Grant
    Filed: November 30, 2006
    Date of Patent: May 4, 2010
    Assignee: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Arie Jeffrey Den Boef, Maurits Van Der Schaar, Thomas Leo Maria Hoogenboom
  • Publication number: 20100092881
    Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region, hereby reducing the intra-field overlay errors.
    Type: Application
    Filed: December 3, 2007
    Publication date: April 15, 2010
    Applicant: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis MOS, Maurits Van Der Schaar, Hubertus Johannes Gertrudus Simon
  • Publication number: 20100091258
    Abstract: A method and apparatus for measurement of a characteristic of a substrate. A target is present on the substrate and a measurement is performed during a scanning movement of the substrate. The scanning movement of the substrate is a linear movement and the measurement includes obtaining a reflected image of the target using a pulsed light source, the duration of a single light pulse being less than 100 psec. A lithographic apparatus includes such a measurement apparatus, and a device manufacturing method includes such a measurement method.
    Type: Application
    Filed: October 6, 2009
    Publication date: April 15, 2010
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Wilhelmus Maria Corbeij, Arie Jeffrey Den Boef, Everhardus Cornelis Mos
  • Patent number: 7683351
    Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region.
    Type: Grant
    Filed: December 1, 2006
    Date of Patent: March 23, 2010
    Assignee: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Maurits Van Der Schaar, Hubertus Johannes Gertrudus Simons
  • Patent number: 7619737
    Abstract: Radiation is projected onto a plurality of targets on a substrate. By assuming that the overlay error derivable from asymmetry varies smoothly across the substrate, the number of targets measured can be reduced. This may result in a smaller area of the scribe lane being used by targets for each layer of the substrate.
    Type: Grant
    Filed: January 22, 2007
    Date of Patent: November 17, 2009
    Assignee: ASML Netherlands B.V
    Inventors: Everhardus Cornelis Mos, Maurits Van Der Schaar
  • Patent number: 7599064
    Abstract: An overlay marker for use with a scatterometer includes two overlying two-dimensional gratings. The two gratings have the same pitch but the upper grating has a lower duty ratio. Cross-talk between X and Y overlay measurements can therefore be avoided. The gratings may be directly overlying or off set so as to be interleaved in one or two directions.
    Type: Grant
    Filed: March 7, 2007
    Date of Patent: October 6, 2009
    Assignee: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Arie Jeffrey Den Boef, Maurits Van Der Schaar
  • Publication number: 20090244538
    Abstract: A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes a reference set of gratings provided in the substrate, the reference set including two reference gratings having line elements in a first direction and one reference grating having line elements in a second, perpendicular, direction. A measurement set of gratings is provided on top of the reference set of gratings, the measurement set comprising three measurement gratings similar to the reference gratings. Two of the measurement gratings are oppositely biased in the second direction relative to the respective reference gratings. An overlay measurement device is provided to measure asymmetry of the three gratings in the reference set and the measurement set, and to derive from the measured asymmetry the overlay in both the first and second direction.
    Type: Application
    Filed: February 23, 2009
    Publication date: October 1, 2009
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Arie Jeffrey DEN BOEF, Everhardus Cornelis MOS, Maurits VAN DER SCHAAR, Stefan Carolus Jacobus Antonius KEIJ
  • Patent number: 7573584
    Abstract: Both the 1st and 0th diffraction orders are detected in a scatterometer. The 1st diffraction orders are used to detect the overlay error. The 0th diffraction order is then used to flag if this is a false overlay error calculation of magnitude greater than the bias but smaller than the pitch of the grating.
    Type: Grant
    Filed: September 25, 2006
    Date of Patent: August 11, 2009
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Everhardus Cornelis Mos, Maurits Van Der Schaar
  • Patent number: 7564555
    Abstract: An inspection system is arranged to measure an overlay error by projecting a plurality of radiation beams, differing in wavelength and/or polarization, onto two targets. A first radiation beam is projected onto a first target and the reflected radiation A1+ is detected. The first target comprises two gratings having a bias +d with respect to each other. The first radiation beam is also projected on to a second target, which comprises two gratings having a bias ?d with respect to each other, and the reflected radiation A1? is detected. A second radiation beam, having a different wavelength and/or polarization from the first radiation beam, is projected onto the first target and reflected radiation A2+ is detected and projected onto the second target and reflected radiation A2? is detected. Detected radiations A1+, A1?, A2+, and A2? is used to determine the overlay error.
    Type: Grant
    Filed: August 15, 2006
    Date of Patent: July 21, 2009
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Mircea Dusa, Everhardus Cornelis Mos, Maurits Van Der Schaar, Stefan Carolus Jacobus Antonius Keij
  • Patent number: 7550379
    Abstract: In a method to produce an alignment mark, an oxide layer and sacrificial layer are processed to comprise recesses. The recesses are filled with a filler material. During filling the recesses, a layer of filler material is formed on the sacrificial layer. The layer of filler material is removed by chemical mechanical polishing. The sacrificial layer protects the oxide layer during filling the recesses and removing the layer of filler material. The sacrificial layer is then removed by etching. This provides an unscratched oxide layer with protrusions. The oxide layer with protrusions is covered with a conducting layer whereby the protrusions punch through the oxide layer to form related protrusions. The related protrusions form an alignment mark.
    Type: Grant
    Filed: October 10, 2006
    Date of Patent: June 23, 2009
    Assignee: ASML Netherlands B.V.
    Inventors: Richard Johannes Franciscus Van Haren, Everhardus Cornelis Mos
  • Patent number: 7547495
    Abstract: In a double exposure process to print features at a reduced pitch, the critical dimension of features printed in the first exposure is measured and used as a target for the second exposure.
    Type: Grant
    Filed: December 21, 2005
    Date of Patent: June 16, 2009
    Assignee: ASML Netherlands B.V
    Inventors: Leonardus Henricus Marie Verstappen, Everhardus Cornelis Mos
  • Patent number: 7532305
    Abstract: A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes a reference set of gratings provided in the substrate, the reference set including two reference gratings having line elements in a first direction and one reference grating having line elements in a second, perpendicular, direction. A measurement set of gratings is provided on top of the reference set of gratings, the measurement set comprising three measurement gratings similar to the reference gratings. Two of the measurement gratings are oppositely biased in the second direction relative to the respective reference gratings. An overlay measurement device is provided to measure asymmetry of the three gratings in the reference set and the measurement set, and to derive from the measured asymmetry the overlay in both the first and second direction.
    Type: Grant
    Filed: March 28, 2006
    Date of Patent: May 12, 2009
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Everhardus Cornelis Mos, Maurits Van Der Schaar, Stefan Carolus Jacobus Antonius Keij
  • Publication number: 20090097008
    Abstract: An alignment sensor includes a spatially coherent radiation source that supplies a radiation beam to an angle-resolved scatterometer. Alignment is performed by detecting beats in the scatter spectrum during scanning of the substrate relative to the scatterometer.
    Type: Application
    Filed: October 8, 2008
    Publication date: April 16, 2009
    Applicant: ASML Netherlands B.V
    Inventors: Everhardus Cornelis MOS, Arie Jeffrey Den Boef, Maurits Van Der Schaar, Stefan Carolus Jacobus Antonius Keij
  • Publication number: 20090066921
    Abstract: A method of producing a marker on a substrate includes projecting a patterned beam on a layer of resist disposed on a substrate in a lithographic apparatus to create a latent marker; and locally heating the substrate at the marker location in the lithographic apparatus to transform the latent marker into a detectable marker.
    Type: Application
    Filed: November 12, 2008
    Publication date: March 12, 2009
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Maurits Van Der Schaar, Jacobus Burghoorn, Richard Johannes Franciscus Van Haren, Everhardus Cornelis Mos, Rene Monshouwer
  • Patent number: 7486408
    Abstract: In a device manufacturing method and lithographic apparatus wherein a pattern is transferred from a patterning device onto a substrate, a measurement target is provided on the substrate in a process enabling execution of a substrate measurement using radiation of a first wavelength. Subsequently the measurement target is transformed in a grid of conducting material, the grid having grid openings which are smaller than the first wavelength. The space in the scribe lane where the measurement target was, is now shielded and may be used again in further layers or processing steps of the substrate.
    Type: Grant
    Filed: March 21, 2006
    Date of Patent: February 3, 2009
    Assignee: ASML Netherlands B.V.
    Inventors: Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Everhardus Cornelis Mos
  • Publication number: 20090027691
    Abstract: In a device manufacturing method and a metrology apparatus, metrology measurements are executed using radiation having a first wavelength. Subsequently a grid of conducting material is applied on the substrate, the grid having grid openings which in a first direction in the plane of the grid are smaller than the first wavelength. The space in the scribe lane where the measurement target was, is now shielded and may be used again in further layers or processing steps of the substrate.
    Type: Application
    Filed: June 18, 2008
    Publication date: January 29, 2009
    Applicant: ASML Netherlands B.V.
    Inventors: Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Everhardus Cornelis Mos