Patents by Inventor Everhardus Cornelis Mos

Everhardus Cornelis Mos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7476490
    Abstract: A method of producing a marker on a substrate includes projecting a patterned beam on a layer of resist disposed on a substrate in a lithographic apparatus to create a latent marker; and locally heating the substrate at the marker location in the lithographic apparatus to transform the latent marker into a detectable marker.
    Type: Grant
    Filed: June 25, 2004
    Date of Patent: January 13, 2009
    Assignee: ASML Netherlands B.V.
    Inventors: Maurits Van Der Schaar, Jacobus Burghoorn, Richard Johannes Franciscus Van Haren, Everhardus Cornelis Mos, Rene Monshouwer
  • Patent number: 7468795
    Abstract: A method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus is disclosed. First a set of grid models is provided. Subsequently, alignment data are obtained by performing an alignment measurement on a plurality of alignment marks on a number of substrates. For each grid model it is checked whether the alignment data is suitable to solve the grid model. If so, the grid model is added to a subset of grid models. The grid model with lowest residuals is selected. In addition to alignment data, metrology data may be obtained by performing an overlay measurement on a plurality of overlay marks on the number of substrates. For each grid model of the subset simulated metrology data may then be determined that is used to determine overlay performance indicators. The grid model is then selected using the overlay performance indicators.
    Type: Grant
    Filed: July 12, 2006
    Date of Patent: December 23, 2008
    Assignee: ASML Netherlands B.V.
    Inventors: Hubertus Johannes Gertrudus Simons, Henricus Johannes Lambertus Megens, Everhardus Cornelis Mos, Leonardus Henricus Marie Verstappen, Roy Werkman, Henricus Jacobus Maria Verhoeven
  • Publication number: 20080218767
    Abstract: An overlay marker for use with a scatterometer includes two overlying two-dimensional gratings. The two gratings have the same pitch but the upper grating has a lower duty ratio. Cross-talk between X and Y overlay measurements can therefore be avoided. The gratings may be directly overlying or off set so as to be interleaved in one or two directions.
    Type: Application
    Filed: March 7, 2007
    Publication date: September 11, 2008
    Applicant: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Arie Jeffrey Den Boef, Maurits Van Der Schaar
  • Publication number: 20080212097
    Abstract: Each target used in a method of measuring overlay using a scatterometer includes a first portion and a second portion, the first portion has features varying only in a first direction and the second portion has features only varying in a second direction. The first and second directions are orthogonal, thus eliminating cross talk between the directions, and improving the accuracy of overlay error calculations.
    Type: Application
    Filed: March 1, 2007
    Publication date: September 4, 2008
    Applicant: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Arie Jeffrey Den Boef, Maurits Van Der Schaar
  • Patent number: 7415319
    Abstract: Correcting for misalignment of a substrate before it is exposed is performed using offset corrections and process corrections that are calculated based on alignment offset measurements of alignment marks and overlay measurements of overlay targets on substrates in previous batches.
    Type: Grant
    Filed: April 4, 2006
    Date of Patent: August 19, 2008
    Assignee: ASML Netherlands B.V.
    Inventors: Roy Werkman, Everhardus Cornelis Mos
  • Publication number: 20080174753
    Abstract: Radiation is projected onto a plurality of targets on a substrate. By assuming that the overlay error derivable from asymmetry varies smoothly across the substrate, the number of targets measured can be reduced. This may result in a smaller area of the scribe lane being used by targets for each layer of the substrate.
    Type: Application
    Filed: January 22, 2007
    Publication date: July 24, 2008
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Everhardus Cornelis Mos, Maurits Van Der Schaar
  • Publication number: 20080165332
    Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region.
    Type: Application
    Filed: November 30, 2007
    Publication date: July 10, 2008
    Applicant: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Maurits Van Der Schaar, Hubertus Johannes Gertrudus Simons
  • Patent number: 7391513
    Abstract: A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes two reference gratings provided in the substrate and two measurement gratings on top of the reference gratings, the measurement gratings being similar to the reference gratings, and oppositely biased in a single direction relative to the respective reference gratings. An overlay measurement device with an image sensor is used for obtaining pixel data of a measurement spot in each of the two measurement gratings. Asymmetry for each pixel in the measurement spot is measured, and from the pixel asymmetry measurements in associated pixels of each of the two measurement gratings an overlay value and a process dependent value is determined, as well as a quality indicator for the overlay value and the process dependent value.
    Type: Grant
    Filed: March 29, 2006
    Date of Patent: June 24, 2008
    Assignee: ASML Netherlands B.V.
    Inventors: Maurits Van Der Schaar, Arie Jeffrey Den Boef, Everhardus Cornelis Mos, Stefan Carolus Jacobus Antonius Keij
  • Publication number: 20080144036
    Abstract: An inspection system is arranged to measure an overlay error by projecting a plurality of radiation beams, differing in wavelength and/or polarization, onto two targets. A first radiation beam is projected onto a first target and the reflected radiation A1+ is detected. The first target comprises two gratings having a bias +d with respect to each other. The first radiation beam is also projected on to a second target, which comprises two gratings having a bias ?d with respect to each other, and the reflected radiation A1? is detected. A second radiation beam, having a different wavelength and/or polarization from the first radiation beam, is projected onto the first target and reflected radiation A2+ is detected and projected onto the second target and reflected radiation A2? is detected. Detected radiations A1+, A1?, A2+, and A2? is used to determine the overlay error.
    Type: Application
    Filed: December 19, 2006
    Publication date: June 19, 2008
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Maurits Van Der Schaar, Arie Jeffrey Den Boef, Everhardus Cornelis Mos
  • Publication number: 20080128642
    Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support for a patterning device, a substrate table for a substrate, a projection system, and a control system. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The projection system is configured to project the patterned radiation beam as an image onto a target portion of the substrate along a scan path. The scan path is defined by a trajectory in a scanning direction of an exposure field of the lithographic apparatus. The control system is coupled to the support, the substrate table and the projection system for controlling an action of the support, the substrate table and the projection system, respectively. The control system is configured to correct a local distortion of the image in a region along the scan path by a temporal adjustment of the image in that region.
    Type: Application
    Filed: December 1, 2006
    Publication date: June 5, 2008
    Applicant: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Maurits Van Der Schaar, Hubertus Johannes Gertrudus Simons
  • Publication number: 20080128644
    Abstract: A fault detection and classification method is disclosed that uses raw back-focal-plane image data of radiation from a substrate surface, detected by a scatterometer detector, to determine a variation in the raw data and correlate the variation in the raw data with a possible fault in a lithographic apparatus or a process that patterned the substrate surface. The correlation is carried out by comparing the variation in the raw data with known metrology data. Once a fault has been determined, a user may be notified of the fault.
    Type: Application
    Filed: November 30, 2006
    Publication date: June 5, 2008
    Applicant: ASML NETHERLANDS
    Inventors: Everhardus Cornelis Mos, Arie Jeffrey Den Boef, Maurits Van Der Schaar, Thomas Leo Maria Hoogenboom
  • Publication number: 20080085599
    Abstract: In a method to produce an alignment mark, an oxide layer and sacrificial layer are processed to comprise recesses. The recesses are filled with a filler material. During filling the recesses, a layer of filler material is formed on the sacrificial layer. The layer of filler material is removed by chemical mechanical polishing. The sacrificial layer protects the oxide layer during filling the recesses and removing the layer of filler material. The sacrificial layer is then removed by etching. This provides an unscratched oxide layer with protrusions. The oxide layer with protrusions is covered with a conducting layer whereby the protrusions punch through the oxide layer to form related protrusions. The related protrusions form an alignment mark.
    Type: Application
    Filed: October 10, 2006
    Publication date: April 10, 2008
    Applicant: ASML Netherlands B.V.
    Inventors: Richard Johannes Franciscus Van Haren, Everhardus Cornelis Mos
  • Publication number: 20080074666
    Abstract: Both the 1st and 0th diffraction orders are detected in a scatterometer. The 1st diffraction orders are used to detect the overlay error. The 0th diffraction order is then used to flag if this is a false overlay error calculation of magnitude greater than the bias but smaller than the pitch of the grating.
    Type: Application
    Filed: September 25, 2006
    Publication date: March 27, 2008
    Applicant: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Everhardus Cornelis Mos, Maurits Van Der Schaar
  • Publication number: 20080068609
    Abstract: When using a scatterometer different portions of a target area may be at different focal depths. When the whole area is measured this results in part of it being out of focus. To compensate for this an array of lenses is placed in the back focal plane of the high numerical aperture lens.
    Type: Application
    Filed: September 14, 2006
    Publication date: March 20, 2008
    Applicant: ASML Netherlands B.V.
    Inventors: Roy Werkman, Everhardus Cornelis Mos, Maurits Van Der Schaar
  • Publication number: 20080043239
    Abstract: An inspection system is arranged to measure an overlay error by projecting a plurality of radiation beams, differing in wavelength and/or polarization, onto two targets. A first radiation beam is projected onto a first target and the reflected radiation A1+ is detected. The first target comprises two gratings having a bias +d with respect to each other. The first radiation beam is also projected on to a second target, which comprises two gratings having a bias ?d with respect to each other, and the reflected radiation A1? is detected. A second radiation beam, having a different wavelength and/or polarization from the first radiation beam, is projected onto the first target and reflected radiation A2+ is detected and projected onto the second target and reflected radiation A2? is detected. Detected radiations A1+, A1?, A2+, and A2? is used to determine the overlay error.
    Type: Application
    Filed: August 15, 2006
    Publication date: February 21, 2008
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Arie Jeffrey Den Boef, Mircea Dusa, Everhardus Cornelis Mos, Maurits Van Der Schaar, Stefan Carolus Jacobus Antonius Keij
  • Publication number: 20080036984
    Abstract: A combined alignment and overlay target to be applied to a substrate to enable measurement of the alignment of the substrate with respect to its surroundings, and measurement of the relative alignment of a series of layers on the substrate, is disclosed. In an embodiment, the target comprises an array of structures substantially equidistant apart except for a portion of the structures that are offset by a specific amount in a first direction, and a second portion of the structures that are offset by the same amount in the opposite direction. This target on the substrate may be used to measure its alignment and the same target applied to a second layer, superposed on a first layer, may be used to measure overlay.
    Type: Application
    Filed: August 8, 2006
    Publication date: February 14, 2008
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Everhardus Cornelis Mos, Arie Jeffrey Den Boef, Maurits Van Der Schaar, Stefan Carolus Jacobus Antonius Keij
  • Publication number: 20070291269
    Abstract: An overlay target on a substrate includes two sets of gratings; the first set having a pitch P1 and the second set having a pitch P2 and each set including a grating with an orientation substantially perpendicular to the first grating of each set. When a layer of resist is to be aligned with the layer below it, the same overlay marks are provided on the upper layer and the relative positions of the overlay targets on the upper layer and the lower layer are compared by shining an overlay beam on to the overlay targets and measuring the diffraction spectrum of the reflected beam. Having two sets of overlay targets with different pitches in gratings enables the measurement of overlay errors that are greater than the pitch of either one of the overlay gratings.
    Type: Application
    Filed: June 20, 2006
    Publication date: December 20, 2007
    Applicant: ASML Netherlands B.V.
    Inventors: Maurits Van Der Schaar, Arie Jeffrey Den Boef, Everhardus Cornelis Mos, Stefan Carolus Jacobus Antonius Keij
  • Patent number: 7112813
    Abstract: A method of device inspection, the method comprising providing an asymmetric marker on a device to be inspected, the form of asymmetry of the marker being dependent upon the parameter to be inspected, directing light at the marker, obtaining a first measurement of the position of the marker via detection of diffracted light of a particular wavelength or diffraction angle, obtaining a second measurement of the position of the marker via detection of diffracted light of a different wavelength or diffraction angle, and comparing the first and second measured positions to determine a shift indicative of the degree of asymmetry of the marker.
    Type: Grant
    Filed: September 22, 2003
    Date of Patent: September 26, 2006
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Frank Bornebroek, Hugo Augustinus Joseph Cramer, Mircea Dusa, Richard Johannes Franciscus Van Haren, Antoine Gaston Marie Kiers, Justin Lloyd Kreuzer, Maurits Van Der Schaar, Paul Jacques Van Wijnen, Everhardus Cornelis Mos, Pieter Willem Herman De Jager, Hans Van Der Laan, Paul Frank Luehrmann
  • Patent number: 7030961
    Abstract: During device manufacturing, a beam of radiation is projected onto a substrate via a mask. The substrate is aligned with the mask using an alignment structure on the substrate, with properties of the light reflected from (or transmitted by) the alignment structure being used to determine the relative position of the substrate. Earlier processing of the substrate may cause errors in the position determined from the reflected light. In one embodiment of the invention, measurement of properties of the reflected light are used to determine a correction for errors caused by processing of the substrate. Parameters of a physical model of the alignment structure may be estimated from the reflected light and used to determine the correction. Amplitudes of a plurality of different diffraction peaks may be measured to determine the correction.
    Type: Grant
    Filed: December 16, 2003
    Date of Patent: April 18, 2006
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Everhardus Cornelis Mos, Maurits Van Der Schaar
  • Patent number: 6879868
    Abstract: An alignment system for a lithographic apparatus includes a detection system arranged in a path of at least a portion of an alignment radiation. The alignment system also includes a position determining unit in communication with the detection system. The position determining unit is adapted to measure a position of at least one alignment mark on a substrate. The substrate is overlaid with a layer of deposited material. A calculating unit is coupled to the position determining unit. The calculating unit calculates a corrected position of the alignment mark on the basis of the position of the at least one alignment mark being measured and a model of a process apparatus involved in a deposition of the layer of deposited material. The model taking into account an amount of deposition of the layer of deposited material.
    Type: Grant
    Filed: April 13, 2004
    Date of Patent: April 12, 2005
    Assignee: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Maurits Van Der Schaar