Abstract: A method of fabricating a gate structure includes depositing a high dielectric constant (high-k) dielectric layer over a substrate. The method further includes performing a multi-stage preheat high-temperature anneal. Performing the multi-stage preheat high-temperature anneal includes performing a first stage preheat at a temperature in a range from about 400° C. to about 600° C., performing a second stage preheat at a temperature in a range from about 700° C. to about 900° C., and performing a high temperature anneal at a peak temperature in a range from 875° C. to about 1200° C.

Abstract: Semiconductor devices and a method for forming the same are provided. In various embodiments, a method for forming a semiconductor device includes receiving a semiconductor substrate including a channel. An atmosphere-modulation layer is formed over the channel. An annealing process is performed to form an interfacial layer between the channel and the atmosphere-modulation layer.

Abstract: A method includes forming a silicon cap layer on a semiconductor fin, forming an interfacial layer over the silicon cap layer, forming a high-k gate dielectric over the interfacial layer, and forming a scavenging metal layer over the high-k gate dielectric. An anneal is then performed on the silicon cap layer, the interfacial layer, the high-k gate dielectric, and the scavenging metal layer. A filling metal is deposited over the high-k gate dielectric.

Abstract: In an embodiment, the present disclosure pertains to a method and compositions for modification of medical devices, such as indwelling medical devices, implantable catheters, in particular, urinary catheters, to enhance formation of a high density and stable biofilm comprising non-pathogenic organisms for the treatment and prevention of colonization of pathogens leading to device-associated infections, such as urinary tract infections. In some embodiments the present disclosure also relates to a method and compositions for storage and use of the catheters coated with a non-pathogenic biofilm. In some embodiments the present disclosure also pertains to a method and compositions for modification of implantable medical devices with bacterial resistant polymers, and/or antimicrobial agents.

Abstract: Disclosed is an energy-saving and environment-friendly device for a communication system equipment, the device includes: a thermoelectric conversion module, arranged on a surface of or in proximity to a high-power module of the communication system equipment, configured to convert thermal energy of the high-power module into electric energy; and an electric power storage device, connected directly to the thermoelectric conversion module or connected thereto via a switch, configured to be charged using electric energy supplied by the thermoelectric conversion module.

Abstract: A method includes forming a silicon cap layer on a semiconductor fin, forming an interfacial layer over the silicon cap layer, forming a high-k gate dielectric over the interfacial layer, and forming a scavenging metal layer over the high-k gate dielectric. An anneal is then performed on the silicon cap layer, the interfacial layer, the high-k gate dielectric, and the scavenging metal layer. A filling metal is deposited over the high-k gate dielectric.

Abstract: An electronic device is provided. The electronic device has a functional body and a supporting apparatus. The supporting apparatus supports the functional body on a supporting surface. The supporting apparatus has a supporting rod, which is connected to the functional body, and a base. When the electronic device is in a first usage mode, the functional body is approximately perpendicular to the supporting surface. When the electronic device is in a second usage mode, the functional body is approximately parallel to the supporting surface. When the electronic device is switched between the first usage mode and the second usage mode, a relative position of the supporting rod and the base is unchanged.

Abstract: The disclosure relates to an automatic gain adjustment and control method and device for eliminating the interference between the GSM and the LTE in the MSR receiver. The method comprises: in an MSP receiver, an upper threshold and a lower threshold which are used for starting up gain control function are set; the ADC power of an ADC of the MSP receiver is detected when LTE OFDM starts; the detected ADC power is compared with the upper threshold and the lower threshold respectively; and based on that the comparison result is that the ADC power is larger than the upper threshold or is smaller than the lower threshold, the gain control function of the MSP receiver is started up, and otherwise, the gain control function of the MSP receiver is not started up. The disclosure can control the LTE and GSM signal power within a certain range.

Abstract: A method includes forming a silicon cap layer on a semiconductor fin, forming an interfacial layer over the silicon cap layer, forming a high-k gate dielectric over the interfacial layer, and forming a scavenging metal layer over the high-k gate dielectric. An anneal is then performed on the silicon cap layer, the interfacial layer, the high-k gate dielectric, and the scavenging metal layer. A filling metal is deposited over the high-k gate dielectric.

Abstract: A method includes forming a silicon cap layer on a semiconductor fin, forming an interfacial layer over the silicon cap layer, forming a high-k gate dielectric over the interfacial layer, and forming a scavenging metal layer over the high-k gate dielectric. An anneal is then performed on the silicon cap layer, the interfacial layer, the high-k gate dielectric, and the scavenging metal layer. A filling metal is deposited over the high-k gate dielectric.

Abstract: An embodiment fin field-effect-transistor (finFET) includes a semiconductor fin comprising a channel region and a gate oxide on a sidewall and a top surface of the channel region. The gate oxide includes a thinnest portion having a first thickness and a thickest portion having a second thickness different than the first thickness. A difference between the first thickness and the second thickness is less than a maximum thickness variation, and the maximum thickness variation is in accordance with an operating voltage of the finFET.

Abstract: Method, system, and programs for determining a keyword from user agent strings are disclosed. In one example, a plurality of user agent strings is received. The plurality of user agent strings is grouped into one or more clusters. The one or more clusters comprise a first cluster that includes two or more user agent strings. The two or more user agent strings in the first cluster are compared. Based on the comparing, a keyword is determined from the first cluster. The keyword represents a type of user agent information.

Abstract: Method, system, and programs for analyzing user agent string are disclosed. In one example, a user agent string is received. A list of predefined keywords is obtained. Each of the predefined keywords is associated with a type of user agent information. One or more candidate keywords are extracted from the user agent string based on the list of predefined keywords. An extraction pattern is obtained for each of the one or more candidate keywords. A keyword is determined with a version from the one or more candidate keywords based, at least in part, on the extraction patterns for the one or more candidate keywords. The determined keyword with the version represents the type of user agent information in the received use agent string.

Abstract: The present invention relates to an adeno-associated virus with site-directed mutagenesis and site-specific modification, and a preparation method and uses thereof. Specifically, the present invention uses genetic code expansion techniques to incorporate non-natural amino acid into an adeno-associated virus capsid protein VP1 or fragment thereof, thereby obtaining an adeno-associated virus with site-directed mutagenesis using the non-natural amino acid. The adeno-associated virus with site-directed mutagenesis is equivalent to a wild-type virus in terms of production, transduction and mobility, can couple with other functional molecules, such as targeting molecules, and can carry a functional gene in a normal manner, which indicates that the adeno-associated virus with site-directed mutagenesis can be used as a tool adeno-associated virus, and applied in various aspects associated with adeno-associated virus such as finding adeno-associated virus binding proteins or using as target genetic therapy vector.

Abstract: An aspect of this description relates to a method that includes partially filling an opening in a dielectric material with a high-dielectric-constant material. The method also includes partially filling the opening with a first metal material over the high-dielectric-constant material. The method further includes filling the opening with a capping layer over the first metal material. The method additionally includes partially removing the first metal material and the capping layer in the opening using a wet etching process in a solution including one or more of H2O2, NH4OH, HCl, H2SO4 or diluted HF. The method also includes fully removing the remaining capping layer in the opening using a wet etching process in a solution includes one or more of NH4OH or diluted HF. The method further includes depositing a second metal material in the opening over the remaining first metal material.

Abstract: A baking transmission mechanism includes a dustproof assembly, which includes a box, a main transport wheel, and a drive unit. The first transportation assembly includes a first oven assembly, a first feed wheel, a first discharge wheel, a first pulley assembly, and a second pulley assembly. The first feed wheel and the first discharge wheel are located at a top of the first oven assembly, and the first pulley assembly and the second pulley assembly are located at opposite sides of the first oven assembly. The second transportation assembly includes a second oven assembly, a second feed wheel, a second discharge wheel, and a third pulley assembly, wherein the second feed wheel and the second discharge wheel are located at a top of the second oven assembly, and the third pulley assembly is adjacent to the second pulley assembly.

Abstract: An embodiment fin field-effect-transistor (finFET) includes a semiconductor fin comprising a channel region and a gate oxide on a sidewall and a top surface of the channel region. The gate oxide includes a thinnest portion having a first thickness and a thickest portion having a second thickness different than the first thickness. A difference between the first thickness and the second thickness is less than a maximum thickness variation, and the maximum thickness variation is in accordance with an operating voltage of the finFET.

Abstract: The present invention provides for novel biochar compositions and a method for producing a new substrate for growing plants using the biochar and a method for growing plants using the biochar composition substrate.