Abstract: A method for preparing a carbon-coated ternary positive electrode material has steps of preparing a ternary positive electrode material precursor, and preparing a suspension of the ternary positive electrode material precursor. Lithium acrylate is added to the suspension of the ternary positive electrode material precursor according to the molar ratio of Li:(Ni+Co+Mn) being 1.03-1.05:1. Ammonium persulphate is added to the lithium acrylate-containing suspension of the ternary positive electrode material precursor, so that the lithium acrylate undergoes a polymerisation reaction and a suspension of a lithium polyacrylate-coated ternary positive electrode material precursor is obtained. The suspension of the lithium polyacrylate-coated ternary positive electrode material precursor is dried to obtain spherical particles. The lithium polyacrylate-coated ternary positive electrode material precursor particles are sintered to obtain a carbon-coated ternary positive electrode material.

Abstract: Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate and a gate structure over the substrate. The gate structure includes a high-k layer over the substrate, a shielding layer over the high-k layer, and an N-type work function metal layer over the shielding layer. In some embodiments, the shielding layer has a dielectric constant less than a dielectric constant of the high-k layer.

Abstract: A method includes forming a fin protruding over a substrate; forming a conformal oxide layer over an upper surface and along sidewalls of the fin; performing an anisotropic oxide deposition or an anisotropic plasma treatment to form a non-conformal oxide layer over the upper surface and along the sidewalls of the fin; and forming a gate electrode over the fin, the conformal oxide layer and the non-conformal oxide layer being between the fin and the gate electrode.

Abstract: Provided are a touch display panel and a method for preparing the touch display panel. The touch display panel includes a base substrate, a display substrate disposed on the base substrate, and a touch substrate disposed on the display substrate, wherein the display substrate comprises a plurality of pixel units arranged in a matrix, the pixel units each comprise a plurality of sub-pixels, the touch substrate comprises a touch electrode layer, the touch electrode layer comprises a plurality of hollow regions, and an orthographic projection of a hollow region on the base substrate contains an orthographic projection of at least one sub-pixel or at least one pixel unit on the base substrate.

Abstract: An electronic device includes a touch detection unit that detects a touch operation executed on an operation surface, a pressure detection unit that detects a pressing force of the touch operation, and a control unit that controls executing a different function based on the detected pressing force of the touch operation when the touch operation is detected by the touch detection unit. In a case where a touch operation is detected again within a predetermined period from a previous touch operation after the control unit has controlled a function based on the pressing force to be executed based on the touch operation, the control unit controls a same function as the function executed based on the previous touch operation to be executed regardless of the pressing force.

Abstract: A cobalt carbide-based catalyst for direct production of olefin from synthesis gas, a preparation method therefor and application thereof are disclosed. The method for preparing the catalyst comprises the following steps: 1) mixing a cobalt source with water, or mixing a cobalt source, an electron promoter and water to obtain a first solution; and mixing a precipitant with water to obtain a second solution; 2) adding the first solution and the second solution to water, or water and a structure promoter for precipitation, crystallizing, separating, drying and calcination; and 3) reducing a solid obtained in Step 2) in a reducing atmosphere, and then carbonizing in a carbonizing atmosphere. The prepared catalyst has high activity and high selectivity to olefins for direct production of olefins via syngas conversion.

Abstract: Semiconductor devices and a method for forming the same are provided. In various embodiments, a method for forming a semiconductor device includes receiving a semiconductor substrate including a channel. An atmosphere-modulation layer is formed over the channel. An annealing process is performed to form an interfacial layer between the channel and the atmosphere-modulation layer.

Abstract: Embodiments described in this disclosure relate to formation of a gate structure of a device, such as in a replacement gate process, and the device formed thereby. In some examples, after an interfacial layer and a gate dielectric layer are deposited, a rapid anneal process, such as laser anneal or flash lamp anneal process, is performed in a controlled ambient nitrogen-containing environment to form a nitrided portion in the gate dielectric layer. The nitrided portion passivates the defects at the surface of the gate dielectric layer and can serve as a barrier to prevent etchant chemistry and defects/dopants from the subsequent gate stack layers from affecting or diffusing through the gate dielectric layer. Particularly, the rapid anneal process is performed on a millisecond scale to confine nitrogen atoms in the gate dielectric layer without diffusing into the underlying interfacial dielectric and/or any neighboring structure such as fin.

Abstract: Embodiments described herein relate to a method for patterning a doping layer, such as a lanthanum containing layer, used to dope a high-k dielectric layer in a gate stack of a FinFET device for threshold voltage tuning. A blocking layer may be formed between the doping layer and a hard mask layer used to pattern the doping layer. In an embodiment, the blocking layer may include or be aluminum oxide (AlOx). The blocking layer can prevent elements from the hard mask layer from diffusing into the doping layer, and thus, can improve reliability of the devices formed. The blocking layer can also improve a patterning process by reducing patterning induced defects.

Abstract: Methods of fabricating semiconductor devices are provided. The method includes forming a first fin and a second fin over a substrate, and conformally forming a silicon oxide layer over the first fin using a first atomic layer deposition (ALD) process. The method also includes conformally forming a silicon nitride layer over the silicon oxide layer using a second ALD process, and forming an insulating layer to fill the trench between the first fin and the second fin over the substrate. The method further includes recessing the insulating layer, the silicon oxide layer, and the silicon nitride layer to form an isolation structure with a liner. In addition, the method includes forming a gate structure over the first fin, and forming a source region and a drain region in the first fin and on opposite sides of the gate structure.

Abstract: A method includes forming a fin protruding over a substrate; forming a conformal oxide layer over an upper surface and along sidewalls of the fin; performing an anisotropic oxide deposition or an anisotropic plasma treatment to form a non-conformal oxide layer over the upper surface and along the sidewalls of the fin; and forming a gate electrode over the fin, the conformal oxide layer and the non-conformal oxide layer being between the fin and the gate electrode.

Abstract: An embodiment fin field-effect-transistor (finFET) includes a semiconductor fin comprising a channel region and a gate oxide on a sidewall and a top surface of the channel region. The gate oxide includes a thinnest portion having a first thickness and a thickest portion having a second thickness different than the first thickness. A difference between the first thickness and the second thickness is less than a maximum thickness variation, and the maximum thickness variation is in accordance with an operating voltage of the finFET.

Abstract: A portion of a concentric bipolar microelectrode sensor is attached to an inflatable balloon of a catheter. Another portion of the concentric bipolar microelectrode sensor is also attached to a body of the catheter. The inflatable balloon is guided to become in proximity of a tissue. The inflatable balloon is then inflated. The inflation increases the likelihood of contact between microelectrodes of the concentric bipolar microelectrode sensor with the tissue. A voltage is supplied to the microelectrodes. The tissue's impedance is accordingly measured over a frequency range. A disease of the tissue, such as a lesion, is diagnosed based on the measured impedance.

Abstract: A semiconductor device includes first and second nanowire structures, first and second annular hafnium oxide layers, first and second annular cap layers, and first and second metal gate electrodes. The first and second nanowire structures are suspended over a substrate and respectively have an n-channel region and a p-channel region. The first and second annular hafnium oxide layers encircle the n-channel region and the p-channel region, respectively. The first and second annular cap layers encircle the first and second annular hafnium oxide layers, respectively. The first and second annular cap layers are made of a same material that is lanthanum oxide, yttrium oxide, or strontium oxide. The first and second metal gate electrodes encircle the first and second annular cap layers, respectively. The first and second metal gate electrodes have a same metal composition.

Abstract: A resin composition and an article made from the resin composition are provided. The resin composition comprises: 30 parts by weight of thermosetting resin; 50 to 125 parts by weight of maleimide resin; and 5 to 35 parts by weight of monofunctional long-chain alkyl acrylate monomer. The resin composition is capable of achieving a proper viscosity and a good filling property whiling maintaining a high glass transition temperature.

Abstract: A method may include forming a dummy dielectric layer over a substrate, and forming a dummy gate over the dummy dielectric layer. The method may also include forming a first spacer adjacent the dummy gate, and removing the dummy gate to form a cavity, where the cavity is defined at least in part by the first spacer. The method may also include performing a plasma treatment on portions of the first spacer, where the plasma treatment causes a material composition of the portions of the first spacer to change from a first material composition to a second material composition. The method may also include etching the portions of the first spacer having the second material composition to remove the portions of the first spacer having the second material composition, and filling the cavity with conductive materials to form a gate structure.

Abstract: A semiconductor device with a metal gate is disclosed. An exemplary semiconductor device with a metal gate includes a semiconductor substrate, source and drain features on the semiconductor substrate, a gate stack over the semiconductor substrate and disposed between the source and drain features. The gate stack includes a HK dielectric layer formed over the semiconductor substrate, a plurality of barrier layers of a metal compound formed on top of the HK dielectric layer, wherein each of the barrier layers has a different chemical composition; and a stack of metals gate layers deposited over the plurality of barrier layers.

Abstract: A semiconductor device includes an n-channel, a p-channel, a first gate dielectric layer, a second gate dielectric layer, a first metal gate electrode and a second metal gate electrode. The n-channel and the p-channel are made of different materials. The first gate dielectric layer is present on at least opposite sidewalls of the n-channel. The second gate dielectric layer is present on at least opposite sidewalls of the p-channel. The first metal gate electrode is present on the first gate dielectric layer. The second metal gate electrode is present on the second gate dielectric layer. The first metal gate electrode and the second metal gate electrode are made of substantially the same material.

Abstract: Embodiments described herein relate to a method for patterning a doping layer, such as a lanthanum containing layer, used to dope a high-k dielectric layer in a gate stack of a FinFET device for threshold voltage tuning. A blocking layer may be formed between the doping layer and a hard mask layer used to pattern the doping layer. In an embodiment, the blocking layer may include or be aluminum oxide (AlOx). The blocking layer can prevent elements from the hard mask layer from diffusing into the doping layer, and thus, can improve reliability of the devices formed. The blocking layer can also improve a patterning process by reducing patterning induced defects.

Abstract: Systems and methods for invoking a third-party program as an additional participant of a chat session include monitoring events of a chat session of a messaging platform. At least one of the events of the chat session is determined to satisfy a triggering condition associated with a third-party program. In response to determining that the at least one of the events of the chat session satisfies the triggering condition associated with the third-party program, the third-party program is invoked as an additional participant of the chat session.