Abstract: Electrochemical Impedance Spectroscopy (EIS) is used in conjunction with continuous glucose monitors and continuous glucose monitoring (CGM) to enable in-vivo sensor calibration, gross (sensor) failure analysis, and intelligent sensor diagnostics and fault detection. An equivalent circuit model is defined, and circuit elements are used to characterize sensor behavior.

Abstract: A message notification method and an electronic device are provided. When a primary screen is turned off, prompt information of a notification message is displayed on a secondary screen located right above a front-facing camera, so that a user can notice a message notification in time, and user experience is improved. A specific solution is as follows: After the primary screen is turned off, if the electronic device detects a first notification message, the electronic device displays first information on the secondary screen. The first information is used to prompt the user that the first notification message has been received. The electronic device detects a first operation in which the user indicates to turn on the primary screen. The electronic device turns on the primary screen in response to the first operation. The electronic device displays second information on the secondary screen.

Abstract: A semiconductor device includes first and second fins, first and second hafnium oxide layers, first and second cap layers, and first and second metal gate electrodes. The first and second fins protrude above a substrate and respectively have an n-channel region and a p-channel region. The first and second hafnium oxide layers wrap around the n-channel region and the p-channel region, respectively. The first and second cap layers wrap around the first and second annular hafnium oxide layers, respectively. The first and second cap layers are made of a same material that is lanthanum oxide, yttrium oxide, or strontium oxide. The first and second metal gate electrodes wrap around the first and second cap layers, respectively. The first and second metal gate electrodes have a same metal composition. The first and second gate dielectrics have a same dielectric composition.

Abstract: The present disclosure provides a touch circuit, a touch panel and a display device. The touch circuit includes: a plurality of touch signal lines electrically connected with a control circuit, a voltage signal line for providing a preset voltage, and a plurality of switching circuits in one to one correspondence with the touch signal lines, wherein each switching circuit of the plurality of the switching circuits is electrically connected with the corresponding touch signal line and the voltage signal line, the switching circuit is configured to be in an off state under a condition that a voltage value on the corresponding touch signal line is within a preset range, and is also configured to be in an on state under a condition that the voltage value on the corresponding touch signal line is not within the preset range.

Abstract: An electronic device obtains an included angle between a touchscreen (a curved screen with a radian on a side edge) and a horizontal plane; starts a camera in response to the included angle between the touchscreen and the horizontal plane falling within a first preset angle range; obtains a distance between the electronic device and a user and a face yaw degree of the user in response to the camera collecting a face image; and performs anti-mistouch processing on a preset mistouch operation of the user on the touchscreen in response to the distance between the electronic device and the user being less than a first distance threshold and the face yaw degree falling within a second preset angle range.

Abstract: The present invention relates to a method for estimating clock frequency offsets of industrial wireless sensor networks based on timing response. In the method, a data packet is sent from a node to be synchronized to a reference node. After the reference node receives the data packet, it replies an acknowledgement after a timing response interval, which is mapped according to a sequence number of the data packet. After communication and interaction for multiple times, a relative frequency offset and a fixed delay between node clocks can be estimated by the node to be synchronized without exchanging timestamp information. The present invention does not need to receive or send messages specially used for time synchronization parameter estimation, which realizes a long-term tracking of clock frequency offset with a low computation cost and reduces communication overhead and energy consumption.

Abstract: Embodiments described herein relate to a method for patterning a doping layer, such as a lanthanum containing layer, used to dope a high-k dielectric layer in a gate stack of a FinFET device for threshold voltage tuning. A blocking layer may be formed between the doping layer and a hard mask layer used to pattern the doping layer. In an embodiment, the blocking layer may include or be aluminum oxide (AlOx). The blocking layer can prevent elements from the hard mask layer from diffusing into the doping layer, and thus, can improve reliability of the devices formed. The blocking layer can also improve a patterning process by reducing patterning induced defects.

Abstract: A semiconductor device includes first and second nanowire structures, first and second annular hafnium oxide layers, first and second annular cap layers, and first and second metal gate electrodes. The first and second nanowire structures are suspended over a substrate and respectively have an n-channel region and a p-channel region. The first and second annular hafnium oxide layers encircle the n-channel region and the p-channel region, respectively. The first and second annular cap layers encircle the first and second annular hafnium oxide layers, respectively. The first and second annular cap layers are made of a same material that is lanthanum oxide, yttrium oxide, or strontium oxide. The first and second metal gate electrodes encircle the first and second annular cap layers, respectively. The first and second metal gate electrodes have a same metal composition.

Abstract: A multi-modal pre-training model acquisition method, an electronic device and a storage medium, which relate to the fields of deep learning and natural language processing, are disclosed. The method may include: determining, for each image-text pair as training data, to-be-processed fine-grained semantic word in the text; masking the to-be-processed fine-grained semantic words; and training the multi-modal pre-training model using the training data with the fine-grained semantic words masked.

Abstract: Provided are a touch display panel and a method for preparing the touch display panel. The touch display panel includes a base substrate, a display substrate disposed on the base substrate, and a touch substrate disposed on the display substrate, wherein the display substrate comprises a plurality of pixel units arranged in a matrix, the pixel units each comprise a plurality of sub-pixels, the touch substrate comprises a touch electrode layer, the touch electrode layer comprises a plurality of hollow regions, and an orthographic projection of a hollow region on the base substrate contains an orthographic projection of at least one sub-pixel or at least one pixel unit on the base substrate.

Abstract: A method includes providing first and second channel layers in NMOS and PMOS regions respectively of a substrate; depositing a first layer comprising hafnium oxide over the first and second channel layers; forming a first dipole pattern over the second channel layer and not over the first channel layer; driving a first metal from the first dipole pattern into the first layer by annealing; removing the first dipole pattern; depositing a second layer comprising hafnium oxide over the first layer and over the first and second channel layers; forming a second dipole pattern over the second layer and the first channel layer and not over the second channel layer; driving a second metal from the second dipole pattern into the second layer by annealing; removing the second dipole pattern; and depositing a third layer comprising hafnium oxide over the second layer and over the first and the second channel layers.

Abstract: A resin composition and an article made from the resin composition are provided. The resin composition comprises: 30 parts by weight of thermosetting resin; 50 to 125 parts by weight of maleimide resin; and 5 to 35 parts by weight of monofunctional long-chain alkyl acrylate monomer. The resin composition is capable of achieving a proper viscosity and a good filling property whiling maintaining a high glass transition temperature.

Abstract: The present disclosure relates to an organic light-emitting backplane and manufacturing method thereof, a touch display screen and a touch display device. The organic light-emitting backplane comprises a display region and a non-display region located around the display region, the organic light-emitting backplane in the non-display region comprising: a first substrate; a padding layer located on a side of the first substrate, the padding layer comprising a body portion and a convex pattern portion located on a side of the body portion away from the first substrate; and a first wiring layer located on a side of the padding layer away from the first substrate, at least apart of the first wiring layer being formed on a surface of the convex pattern portion.

Abstract: A resin composition includes a first prepolymer and a second prepolymer, the first prepolymer being prepared from a first mixture subjected to a prepolymerization reaction, the second prepolymer being prepared from a second mixture subjected to a prepolymerization reaction, wherein the first mixture includes a maleimide resin and a benzoxazine resin, and the second mixture includes a maleimide resin and a bis(trifluoromethyl)benzidine. The resin composition may be used to make various articles, such as a prepreg, a resin film, a laminate or a printed circuit board, and at least one of the following properties can be improved, including copper foil peeling strength, dissipation factor, ratio of thermal expansion, cure shrinkage and glass transition temperature.

Abstract: An edge connector includes a first row of golden fingers and a second row of golden fingers. The first row of golden fingers is adjacent to a plugging end of the edge connector, and the second row of golden fingers is adjacent to the first row of golden fingers. In a plugging direction of the edge connector, each golden finger in the first row of golden fingers has a first end proximate to the plugging end and a second end opposite to the first end. A first end of a grounded golden finger in the first row of golden fingers is protruded from other golden fingers, and second ends of two or more than two golden fingers in the first row of golden fingers are not aligned with each other.

Abstract: A semiconductor device with a metal gate is disclosed. An exemplary semiconductor device with a metal gate includes a semiconductor substrate, source and drain features on the semiconductor substrate, a gate stack over the semiconductor substrate and disposed between the source and drain features. The gate stack includes a HK dielectric layer formed over the semiconductor substrate, a plurality of barrier layers of a metal compound formed on top of the HK dielectric layer, wherein each of the barrier layers has a different chemical composition; and a stack of metals gate layers deposited over the plurality of barrier layers.

Abstract: Embodiments described herein relate to a method for patterning a doping layer, such as a lanthanum containing layer, used to dope a high-k dielectric layer in a gate stack of a FinFET device for threshold voltage tuning. A blocking layer may be formed between the doping layer and a hard mask layer used to pattern the doping layer. In an embodiment, the blocking layer may include or be aluminum oxide (AlOx). The blocking layer can prevent elements from the hard mask layer from diffusing into the doping layer, and thus, can improve reliability of the devices formed. The blocking layer can also improve a patterning process by reducing patterning induced defects.

Abstract: A method may include forming a dummy dielectric layer over a substrate, and forming a dummy gate over the dummy dielectric layer. The method may also include forming a first spacer adjacent the dummy gate, and removing the dummy gate to form a cavity, where the cavity is defined at least in part by the first spacer. The method may also include performing a plasma treatment on portions of the first spacer, where the plasma treatment causes a material composition of the portions of the first spacer to change from a first material composition to a second material composition. The method may also include etching the portions of the first spacer having the second material composition to remove the portions of the first spacer having the second material composition, and filling the cavity with conductive materials to form a gate structure.

Abstract: A cobalt carbide-based catalyst for direct production of olefin from synthesis gas, a preparation method therefor and application thereof are disclosed. The method for preparing the catalyst comprises the following steps: 1) mixing a cobalt source with water, or mixing a cobalt source, an electron promoter and water to obtain a first solution; and mixing a precipitant with water to obtain a second solution; 2) adding the first solution and the second solution to water, or water and a structure promoter for precipitation, crystallizing, separating, drying and calcination; and 3) reducing a solid obtained in Step 2) in a reducing atmosphere, and then carbonizing in a carbonizing atmosphere. The prepared catalyst has high activity and high selectivity to olefins for direct production of olefins via syngas conversion.

Abstract: The present disclosure relates to a touch display panel and a method for manufacturing the same. The display panel includes: an active area disposed on a substrate and including a light emitting device; a raised area disposed on the substrate, located at a periphery of the active area and including a stacked structure; and a touch sensor disposed on a side of the active area and the raised area away from the substrate, wherein the touch sensor is electrically insulated from the active area and is in electrical contact with the raised area; wherein a thickness of the active area matches a thickness of the raised area to ensure a uniform thickness of the touch display panel, and the raised area is electrically insulated from the active area, and a touch signal sensed by the touch sensor is transmitted via the raised area.