Abstract: A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. The semiconductor body includes a first zone of a first conduction type and a second zone of a second conduction type, complementary to the first conduction type, the second zone adjoining the first zone. The first zone and the second zone are coupled to an electrically highly conductive layer. A connection zone of the second conduction type is arranged between the second zone and the electrically highly conductive layer.

Abstract: A semiconductor body comprised of a semiconductor material includes a first monocrystalline region of the semiconductor material having a first lattice constant along a reference direction, a second monocrystalline region of the semiconductor material having a second lattice constant, which is different than the first, along the reference direction, and a third, strained monocrystalline region between the first region and the second region.

Abstract: An IGBT includes at least one first type transistor cell, including a base region, first and second emitter regions, and a body region arranged between the first emitter region and base region. The base region is arranged between the body region and second emitter region. A gate electrode adjacent the body region is dielectrically insulated from the body region by a gate dielectric. A base electrode adjacent the base region is dielectrically insulated from the base region by a base electrode dielectric. The base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section. A ratio between the doping concentration of the first base region section and the doping concentration of the second base region section is at least 10. The base electrode dielectric is thicker than the gate dielectric.

Abstract: An insulated gate bipolar transistor device includes a semiconductor substrate having a drift region of an insulated gate bipolar transistor structure. Further, the insulated gate bipolar transistor device includes a first nanowire structure and a first gate structure. The first nanowire structure of the insulated gate bipolar transistor structure is connected to the drift region, and the first gate structure of the insulated gate bipolar transistor structure extends along at least a part of the first nanowire structure.

Abstract: A field-effect semiconductor device includes a semiconductor body having a first surface and an edge, an active area, and a peripheral area between the active area and the edge, a source metallization on the first surface and a drain metallization. In the active area, first conductivity type drift portions alternate with second conductivity type compensation regions. The drift portions contact the drain metallization and have a first maximum doping concentration. The compensation regions are in Ohmic contact with the source metallization. The peripheral area includes a first edge termination region and a second semiconductor region in Ohmic contact with the drift portions having a second maximum doping of the first conductivity type which lower than the first maximum doping concentration by a factor of ten. The first edge termination region of the second conductivity type adjoins the second semiconductor region and is in Ohmic contact with the source metallization.

Abstract: A semiconductor substrate having a first main surface and a transistor cell includes a drift region, a body region between the drift region and the first main surface, an active trench at the first main surface extending into the drift region, a gate insulating layer at sidewalls and a bottom side of the active trench, a gate conductive layer in the active trench, a source region in the body region, and adjacent to the active trench, a body trench at the first main surface extending into the drift region, the body trench being adjacent to the body region and to the drift region, an insulating layer at sidewalls and at a bottom side of the body trench, the insulating layer being asymmetric with respect to an axis extending perpendicular to the first main surface at a center of the body trench, and a conductive layer in the body trench.

Abstract: A semiconductor component is described herein. In accordance with one example of the invention, the semiconductor component includes a semiconductor body, which has a top surface and a bottom surface. A body region, which is doped with dopants of a second doping type, is arranged at the top surface of the semiconductor body. A drift region is arranged under the body region and doped with dopants of a first doping type, which is complementary to the second doping type. Thus a first pn-junction is formed at the transition between the body region and the drift region. A field stop region is arranged under the drift region and adjoins the drift region. The field stop region is doped with dopants of the same doping type as the drift region. However, the concentration of dopants in the field stop region is higher than the concentration of dopants in the drift region. At least one pair of semiconductor layers composed of a first and a second semiconductor layer are arranged in the drift region.

Abstract: A semiconductor body includes first and second opposing surfaces, an edge extending in a vertical direction substantially perpendicular to the first surface, an active area, a peripheral area arranged in a horizontal direction substantially parallel to the first surface between the active area and edge, and a pn-junction extending from the active area into the peripheral area. In the peripheral area the semiconductor device further includes a first conductive region arranged next to the first surface, a second conductive region arranged next to the first surface, and arranged in the horizontal direction between the first conductive region and edge, and a passivation structure including a first portion at least partly covering the first conductive region, a second portion at least partly covering the second conductive region. The first portion has a different layer composition than the second portion and/or a thickness which differs from the thickness of the second portion.

Abstract: An IGBT includes at least one first type transistor cell, including a base region, a first emitter region, a body region, and a second emitter region. The body region is arranged between the first emitter region and the base region. The base region is arranged between the body region and the second emitter region. The IGBT further includes a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a base electrode adjacent the base region and dielectrically insulated from the base region by a base electrode dielectric. The base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section. A doping concentration of the first base region section is higher than a doping concentration of the second base region section.

Abstract: A semiconductor device includes a first semiconductor region including a first semiconductor material and a second semiconductor region adjoining the first semiconductor region, the second semiconductor region including a second semiconductor material different from the first semiconductor material. The semiconductor device further includes at least one of a drift zone and a base zone in the first semiconductor region, and at least one type of deep-level dopant in an emitter region of the second semiconductor region. The at least one type of deep-level dopant has a distance to the valence or conduction band of at least 100 meV.

Abstract: A semiconductor device in a semiconductor substrate includes a first main surface and a transistor cell. The transistor cell includes a drift region of a first conductivity type, a body region of a second conductivity type between the drift region and the first main surface, an active trench in the first main surface extending to the drift region, a source region of the first conductivity in the body region adjacent to the active trench, and a body trench at the first main surface extending to the drift region and adjacent to the body region and the drift region. The active trench includes a gate insulating layer at sidewalls and a bottom side, and a gate conductive layer. The body trench includes a conductive layer and an insulating layer at sidewalls and a bottom side, and asymmetric to a perpendicular axis of the first main surface and the body trench center.

Abstract: A semiconductor component includes an element composed of a conductive material, which is arranged above a surface of a semiconductor substrate. The element includes an element region not adjoined by any electrical contacts to an overlying or underlying electrically conductive plane. In this case, a surface of the element facing away from the semiconductor substrate is patterned with elevations or depressions and a surface of the element region facing the semiconductor substrate is patterned to a lesser extent or is not patterned.

Abstract: A description is given of a method for doping a semiconductor body, and a semiconductor body produced by such a method. The method comprises irradiating the semiconductor body with protons and irradiating the semiconductor body with electrons. After the process of irradiating with protons and after the process of irradiating with electrons, the semiconductor body is subjected to heat treatment in order to attach the protons to vacancies by means of diffusion.

Abstract: Disclosed is a semiconductor component that includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body, a base region of one conductivity type arranged between the first emitter region and the second emitter region, and at least two higher doped regions of the same conductivity type as the base region and arranged in the base region. The at least two higher doped regions are spaced apart from one another in a lateral direction of the semiconductor body and separated from one another only by sections of the base region.

Abstract: A semiconductor body comprised of a semiconductor material includes a first monocrystalline region of the semiconductor material having a first lattice constant along a reference direction, a second monocrystalline region of the semiconductor material having a second lattice constant, which is different than the first, along the reference direction, and a third, strained monocrystalline region between the first region and the second region.

Abstract: A semiconductor device includes a first semiconductor region including a first semiconductor material. The semiconductor device further includes a second semiconductor region adjoining the first semiconductor region. The second semiconductor region includes a second semiconductor material different from the first semiconductor material. The semiconductor device further includes a drift or base zone in the first semiconductor region. The semiconductor device further includes an emitter region in the second semiconductor region. The second semiconductor region includes at least one type of deep-level dopant. A solubility of the at least one type of deep-level dopant is higher in the second semiconductor region than in the first semiconductor region.

Abstract: A description is given of a method for doping a semiconductor body, and a semiconductor body produced by such a method. The method comprises irradiating the semiconductor body with protons and irradiating the semiconductor body with electrons. After the process of irradiating with protons and after the process of irradiating with electrons, the semiconductor body is subjected to heat treatment in order to attach the protons to vacancies by means of diffusion.

Abstract: A semiconductor device includes a semiconductor body including a first surface having a normal direction defining a vertical direction, a first n-type semiconductor region arranged below the first surface and having a first maximum doping concentration and a second n-type semiconductor region arranged below the first n-type semiconductor region and including, in a vertical cross-section, two spaced apart first n-type portions each adjoining the first n-type semiconductor region, having a maximum doping concentration which is higher than the first maximum doping concentration and having a first minimum distance to the first surface, and a second n-type portion adjoining the first n-type semiconductor region, having a maximum doping concentration which is higher than the first maximum doping concentration and a second minimum distance to the first surface which is larger than the first minimum distance. A p-type second semiconductor layer forms a pn-junction with the second n-type portion.

Abstract: A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 ?m along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×1017 cm?3 to 5×1017 cm?3 over the section L.

Abstract: A semiconductor diode includes a semiconductor body and trench structures extending from a surface of the semiconductor body into the semiconductor body. The semiconductor body includes a doped layer of a first conductivity type and a doped zone of a second conductivity type opposite to the first conductivity type. The doped zone is formed between the doped layer and a first surface of the semiconductor body. The trench structures are arranged between electrically connected portions of the semiconductor body. The trench structures do not include conductive structures that are both electrically insulated from the semiconductor body and electrically connected with another structure outside the trench structures.