Abstract: The disclosure provides an electronic device. The electronic device includes a computer system, a light emitting module, and a control unit. The computer system is adapted to execute a boot procedure, the boot procedure lasting for a first time period. A light emitting module includes a plurality of indicator lights, each indicator light providing an indication function. The control unit is electrically connected to the light emitting module. The control unit controls the indicator lights to generate a first light emitting effect within a second time period when the computer system enters the boot procedure. The second time period is shorter than the first time period.

Abstract: A method for adjusting the uniformity of a display is provided. The method includes the following steps. An angle sensor is disposed on a display. The display opposite to a measurement device is disposed on a rotation axis. The uniformity of a frame of the display at at least one use angle is measured by the measurement device, wherein the display is adjusted to a first use angle and is left still for a period of time, so that the uniformity of the display arranged at the first use angle has a first uniformity correction parameter; and a correspondence table relevant to the first use angle and the first uniformity correction parameter is stored to the display.

Abstract: A semiconductor processing system processes semiconductor wafers in a process chamber. The process chamber includes semiconductor process equipment for performing semiconductor processes within the chamber. The process chamber includes a heat pipe integrated with one or more components of the process chamber. The heat pipe effectively transfers heat from within the chamber to an exterior of the chamber.

Abstract: A semiconductor device includes a bottom electrode, a top electrode, a sidewall spacer, and a data storage element. The sidewall spacer is disposed aside the top electrode. The data storage element is located between the bottom electrode and the top electrode, and includes a ferroelectric material. The data storage element has a peripheral region which is disposed beneath the sidewall spacer and which has at least 60% of ferroelectric phase. A method for manufacturing the semiconductor device and a method for transforming a non-ferroelectric phase of a ferroelectric material to a ferroelectric phase are also disclosed.

Abstract: A cigar cutter with an arresting mechanism includes a pivotally connected arresting block and a guide track divided into a smooth groove, an abutting groove with an abutting block having a portion corresponding to a space between two opposite sides of the smooth groove, and a direction-changing groove having a shoulder opposite to the abutting block and two ends in communication with an end of the smooth groove and an end of the abutting groove, respectively. The arresting block can be moved in the guide track. When the cutter enters a closed state from an open state, the arresting block sequentially touches the abutting block and the shoulder, driving itself to rotate. A length between two opposite sides of a rotated arresting block is greater than two opposite sides of the smooth groove, keeping the arresting block from extending into the smooth groove and the cutter in the closed state.

Abstract: Various embodiments of the present application are directed towards a resistive random-access memory (RRAM) cell comprising a barrier layer to constrain the movement of metal cations during operation of the RRAM cell. In some embodiments, the RRAM cell further comprises a bottom electrode, a top electrode, a switching layer, and an active metal layer. The switching layer, the barrier layer, and the active metal layer are stacked between the bottom and top electrodes, and the barrier layer is between the switching and active metal layers. The barrier layer is conductive and between has a lattice constant less than that of the active metal layer.

Abstract: An iron core structure in a transformer which can show different leakage inductance values between primary and secondary windings includes an iron core, and the primary and secondary windings. A first core member of the iron core includes first and second side legs on either side of a first center leg, a second core member butted against the first includes third and fourth side legs on either side of a second center leg. The primary winding is arranged on the center leg, and the secondary winding is arranged on the side legs. The first and third side legs define a gap therebetween, there is a second gap defined between second and fourth side legs. Effective magnetic resistance of the side legs is increased, the primary and secondary windings show different leakage inductance values, and can meet diversified needs of power stage control circuits.

Abstract: A pharmaceutical composition for eardrum repair includes: collagen present in an amount of 8 wt % to 12 wt %; a forming agent present in an amount of 19 wt % to 22 wt %; and rest of a solvent, wherein the forming agent is a polymer of polyethylene oxide (PEO) and polypropylene oxide (PPO), polystyrene, polyethylene, polypropylene, polymethylmethacrylate, poly(N-isopropylacrylamide), poly[2-(dimethylamino)ethyl methacrylate] (pDMAEMA) hydroxypropylcellulose, poly(vinylcaprolactame), poly-2-isopropyl-2-oxazoline, polyvinyl methyl ether or a combination thereof.

Abstract: Methods for programming memory cells of a resistive memory device include applying a voltage pulse sequence to a memory cell to set a logic state of the memory cell. An initial set sequence of voltage pulses may be applied to the memory cell, followed by a reform voltage pulse having an amplitude greater than the amplitudes of the initial set sequence, and within ±5% of the amplitude of a voltage pulse used in an initial forming process. Additional voltage pulses having amplitudes that are less than the amplitude of the reform voltage pulse may be subsequently applied. By applying a reform voltage pulse in the middle of, or at the end of, a memory set sequence including multiple voltage pulses, a resistive memory device may have a larger memory window and improved data retention relative to resistive memory devices programmed using conventional programming methods.

Abstract: A method of controlling chemical concentration in electrolyte includes measuring a chemical concentration in an electrolyte, wherein the electrolyte is contained in a tank; and increasing a vapor flux through an exhaust pipe connected to the tank when the measured chemical concentration is lower than a control lower limit value.

Abstract: In an embodiment, a robotic arm includes: a base; at least one link secured to the base; a gripper secured to the at least one link, wherein: the gripper comprises a finger, the gripper is configured to secure a wafer while the at least one link is in motion, and the gripper is configured to release the wafer while the at least one link is stopped, a sensor disposed on the finger, the sensor configured to collect sensor data characterizing the robotic arm's interaction with a semiconductor processing chamber while the wafer is secured using the finger.

Abstract: A method, for making a semiconductor device, includes forming a first fin over a substrate. The method includes forming a dummy gate stack on the first fin. The method includes forming a first gate spacer along a side of the dummy gate stack. The first gate spacer includes a first dielectric material. The method includes forming a second gate spacer along a side of the first gate spacer. The second gate spacer includes a semiconductor material. The method includes forming a source/drain region in the first fin adjacent the second gate spacer. The method includes removing at least a portion of the second gate spacer to form a void extending between the first gate spacer and the source/drain region.

Abstract: In an embodiment, a system includes: an orientation sensor configured to detect an orientation fiducial on a bevel of a wafer; a pedestal configured to rotate the wafer to allow the orientation sensor to detect the orientation fiducial and place the orientation fiducial at a predetermined orientation position; and a defect sensor configured to detect a wafer defect along a surface of the wafer while rotated by the pedestal.

Abstract: A method for making a micro LED display panel not requiring high-accuracy or individual positioning includes providing a carrier substrate with micro LEDs, providing a TFT substrate including a driving circuit, and forming a conductive connecting element, an insulating layer, and a contact electrode layer on the TFT substrate. The insulating layer and the contact electrode layer are patterned to define a through hole, the first electrode is placed against the contact electrode layer, and different voltages Vref and Vdd are applied to the contact electrode layer and to the conductive connecting element respectively, creating an electrostatic attraction. The micro LEDs and the first electrode are transferred from the carrier substrate onto the TFT substrate; and the conductive connecting element is bonded to the first electrode. The method of making is simple. A micro LED display panel made by the method is also provided.

Abstract: An electrical connector assembly includes a receptacle connector disposed in a wearable machine and equipped with one row contacts and a set of magnets, and a cable connector equipped with two rows of contacts and another set of magnets so as to be mated with the receptacle connector in a flippable manner wherein the interface between the receptacle connector and the cable connector is of a stadium configuration, and the set of magnets are located at two opposite halves of the long sides of the stadium configuration in the diagonal direction.

Abstract: In some examples, the disclosure describes a device that includes a stand enclosure that includes a first end to interact with a work surface and a second end to be coupled to a display device, a plurality of input ports coupled to the stand enclosure, and a connection interface coupled to the second end of the stand enclosure to allow communication between the display device and the plurality of inputs when the connection interface is coupled to the display device.

Abstract: A method includes forming a first trench and a second trench in a base structure. The first trench has a first aspect ratio, and the second trench has a second aspect ratio lower than the first aspect ratio. A deposition process is then performed to deposit a layer. The layer includes a first portion extending into the first trench, and a second portion extending into the second trench. The first portion has a first thickness. The second portion has a second thickness greater than the first thickness by a first difference. The method further includes performing an etch-back process to etch the layer. After the etch-back process, the first portion has a third thickness, and the second portion has a fourth thickness. A second difference between the third thickness and the fourth thickness is smaller than the first difference.

Abstract: A high electron mobility transistor (HEMT) device including a substrate, a channel layer, a barrier layer, a p-type gallium nitride (GaN) spacer, a gate electrode, a source electrode, and a drain electrode is provided. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer and has a protruding portion. The P-type GaN spacer is disposed on a side wall of the protruding portion. The gate electrode is disposed on the protruding portion and the P-type GaN spacer. The source electrode and the drain electrode are disposed on two sides of the gate electrode.

Abstract: A tramp metal removing device has a primary housing to define a product flow path for being passed by a stream of raw materials and a moving path. A secondary housing is connected to the primary housing. A plurality of drawer units are sequentially stacked on the primary housing and secondary housing. Each drawer unit has a frame, a plurality of magnetic members and a scraping assembly. The frame is coupled with the primary and secondary housings in a movable way. Each of magnetic members is secured on the frame and has a magnetic section and a non-magnetic section. The scraping assembly is coupled with the frame in a way that it is only moveable in the secondary housing for removing tramp metals of a stream of raw materials in a two-stage manner.

Abstract: An integrated circuit includes a plurality of metal lines extending along a first direction, the plurality of metal lines being separated, in a second direction perpendicular to the first direction, by integral multiples of a nominal minimum pitch. The integrated circuit further includes a plurality of standard cells, at least one of the plurality of standard cells having a cell height along the second direction being a non-integral multiple of the nominal minimum pitch.