Abstract: A laser device for photocoagulation surgery is disclosed, wherein the laser device includes a multi-wavelength laser source having a first direction and a second direction different from the first direction. The laser device includes a positioning light source, a first laser light source, a first lens, a second laser light source, a second lens, a third laser light source, a third lens, a fourth laser light source and a fourth lens. The positioning light source configured to project a positioning visible light along the first direction, wherein the positioning visible light has a specific wavelength being about 635 nm. The first laser light source configured to project a first laser light having a first wavelength along the second direction. The first lens disposed in a main optical path of the positioning visible light, and configured to receive the first laser light and reflect the first laser light along the first direction.

Abstract: A liquid-cooled cooling structure includes a cooling main body having a condensation chamber and an evaporation chamber arranged vertically therein; a separation member arranged between and separating the condensation chamber and the evaporation chamber, and having a first through hole and a second through hole communicating with the condensation chamber and the evaporation chamber, a dimension of the first through hole being greater than that of the second through hole; a longitudinal partition board received in the condensation chamber and arranged between the first through hole and the second through hole and separating the condensation chamber into a first channel and a second channel; cooling fins extended from an outer perimeter of the cooling main body.

Abstract: Provided are methods for clinical treatment of complement-mediated TMA (CM-TMA) (e.g., CM-TMA associated with a trigger, such as autoimmune condition, an infection, a transplant, one or more drugs, or malignant hypertension), using an anti-C5 antibody, or antigen binding fragment thereof, such as ravulizumab (ULTOMIRIS®).

Abstract: A resin film is provided. When the resin film is characterized by Fourier transform infrared spectroscopy (FTIR), the Fourier transform infrared spectrum of the resin film has a signal intensity A from 2205 cm?1 to 2322 cm?1 and a signal intensity B from 1472 cm?1 to 1523 cm?1, and 0.70?A/B?1.95.

Abstract: In order to reduce the occurrence of current alarms in a semiconductor etching or deposition process, a controller determines an offset in relative positions of a cover ring and a shield over a wafer within a vacuum chamber. The controller provides a position alarm and/or adjusts the position of the cover ring or shield when the offset is greater than a predetermined value or outside a range of acceptable values.

Abstract: A transistor includes a gate structure over a substrate, wherein the substrate includes a channel region. The transistor further includes a source/drain (S/D) in the substrate adjacent to the gate structure. The transistor further includes a lightly doped drain (LDD) region adjacent to the S/D, wherein a dopant concentration in the first LDD is less than a dopant concentration in the S/D. The transistor further includes a doping extension region adjacent the LDD region, wherein the doping extension region extends farther under the gate structure than the LDD region, and a maximum depth of the doping extension region is 10-times to 30-times greater than a maximum depth of the LDD.

Abstract: A driver structure for an organic light-emitting diode (OLED) device is provided. The driver structure includes a front-end-of-line (FEOL) layer; a back-end-of-line (BEOL) layer disposed on the FEOL layer; and a customer BEOL layer disposed on the BEOL layer. The BEOL layer includes a customer BEOL electrical checking structure. The customer BEOL electrical checking structure has a plurality of memory cells that include a first memory cell vertically aligned with and corresponds to two adjacent pixel regions. The customer BEOL layer includes six bottom structures corresponding to the two adjacent pixel regions and connected in series to form a first electrical path and a second electrical path each electrically connected to the first memory cell. The first memory cell is configured to detect an anomaly of electrical resistance of the first and second electrical path.

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode, a drain electrode, a gate electrode and a single field plate. The source electrode, the drain electrode, and the gate electrode are disposed on the second nitride-based semiconductor layer. The gate electrode is between the source and drain electrodes. The single field plate is disposed over the gate electrode and extends toward the drain electrode. The field plate has a first end part, a second end part and the central part. The first and the second end parts are located at substantially the same height. Portions of the central part are in a position lower than that of the first and second end parts, and the first end part extends laterally in a length greater than a width of the gate electrode.

Abstract: The disclosure provides a power management method. The power management method is applicable to an electronic device. The electronic device is electrically coupled to an adapter, and includes a system and a battery. The adapter has a feed power. The battery has a discharge power. The power management method of the disclosure includes: reading a power value of the battery; determining a state of the system; and discharging power to the system, when the system is in a power-on state and the power value is greater than a charging stopping value, by using the battery, and controlling, according to the discharge power and the feed power, the adapter to selectively supply power to the system. The disclosure further provides an electronic device using the power management method.

Abstract: A semiconductor device includes a random access memory (RAM) structure and a dielectric layer. The RAM structure is over a substrate and includes a bottom electrode layer, a ferroelectric layer over the bottom electrode layer, and a top electrode layer over the ferroelectric layer. The dielectric layer is over the substrate and laterally surrounds a lower portion of the RAM structure. From a cross-sectional view, the bottom electrode layer of the RAM structure has a lateral portion and a vertical portion, and the vertical portion upwardly extends from the lateral portion to a position higher than a top surface of the dielectric layer.

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first nitride-based transistor, and a second nitride-based transistor. The first nitride-based transistor applies the 2DEG region as a channel thereof and comprising a first drain electrode that makes contact with the second nitride-based semiconductor layer to form a first Schottky diode with the second nitride-based semiconductor layer. The second nitride-based transistor applies the 2DEG region as a channel thereof and includes a second drain electrode that makes contact with the second nitride-based semiconductor layer to form a second Schottky diode with the second nitride-based semiconductor layer, such that the first Schottky diode and the second Schottky diode are connected to the same node.

Abstract: A device, which is used to inspect the confinement boundary of a vertical spent nuclear fuel storage canister during operation, includes a vertical spent nuclear fuel storage unit, a lifting unit, a transferring unit and an inspection platform. The vertical spent nuclear fuel storage unit includes a vertical storage canister and a storage overpack. The vertical storage canister is configured for storing spent nuclear fuels, and the storage overpack is configured for storing the vertical storage canister. The lifting unit, connected with the vertical storage canister, is configured for lifting the vertical storage canister. The transferring unit, connected with the lifting unit, is configured for protecting the lifted vertical storage canister. The inspection platform, connected with the transferring unit and the storage overpack, is configured for creating more space with sufficient shielding for the usage of inspecting the confinement boundary of the vertical storage canister.

Abstract: The present disclosure provides a semiconductor structure, including a transistor. The transistor includes a semiconductive substrate, a gate structure, a pair of highly doped regions and a dielectric element. The semiconductive substrate has a top surface. The gate structure is over the top surface. The pair of highly doped regions is separated by the gate structure. The dielectric element is embedded in the semiconductive substrate. The dielectric element is laterally and vertically misaligned with the pair of highly doped regions.

Abstract: A semiconductor device includes a first and a second nitride-based semiconductor layers, a source electrode, a drain electrode, a passivation layer, a stress modulation layer and a gate electrode. The stress modulation layer is disposed over the second nitride-based semiconductor layer and extends along at least one sidewall of the passivation layer to make contact with the second nitride-based semiconductor layer, so as to form an interface. The gate electrode is disposed over the stress modulation layer and between the source and drain electrodes. The gate electrode is located directly above the interface of the stress modulation layer and the second nitride-based semiconductor layer.

Abstract: A method and a system for detecting a semiconductor device are provided. The method comprises obtaining an image of the semiconductor device, evaluating a feature of the image, detecting a defect of the semiconductor device based on the feature, extracting a defect information for the defect, calculating a defect die ratio (DDR) in response to the defect and analyzing a relation between the DDR and the defect information.

Abstract: An electronic whiteboard system and an operation method thereof are provided. The electronic whiteboard system includes a data processing device. The data processing device calculates an original message amount of an original object move message according to an object move operation on a cloud electronic whiteboard operated by one of the client devices. The data processing device simulates a grouping message amount of a grouping object move message according to the object move operation. The data processing device compares the original message amount and the grouping message amount to determine whether to generate the grouping object move message, and transmits the original object move message or the grouping object move message to other of the plurality of client devices.

Abstract: Various embodiments of the present disclosure are directed towards a memory cell comprising a blocking layer configured to block diffusion of metal from an electrode of the memory cell to a ferroelectric layer of the memory cell. More particularly, the blocking layer and the ferroelectric layer are between a top electrode of the memory cell and a bottom electrode of the memory cell, which both comprise metal. Further, the blocking layer is between the ferroelectric layer and the electrode, which corresponds to one of the top and bottom electrodes. In some embodiments, the metal of the one of the top and bottom electrodes has a lowest electronegativity amongst the metals of top and bottom electrodes and is hence the most reactive and likely to diffuse amongst the metals of top and bottom electrodes.

Abstract: A bi-directional and multi-channel optical module incudes an encapsulation casing, a TOSA, a plurality of ROSAs and a plurality of optical folding elements. The TOSA is accommodated in the encapsulation casing. The TOSA includes a light emitting element and a thin film LiNbOx modulator, and a light receiving end of the thin film LiNbOx modulator is optically coupled with the light emitting element. The ROSAs are accommodated in the encapsulation casing. The ROSAs are configured to receive external optical signals propagating into the encapsulation casing. The optical folding elements are optically coupled with a plurality of light propagation ends of the thin film LiNbOx modulator, respectively, for changing a traveling direction of light emitted by the TOSA. Each of the optical folding elements is configured to enable one of the ROSAs share a fiber access terminal with the TOSA.

Abstract: A nitride-based semiconductor device includes a buffer, a first nitride-based semiconductor layer, a shield layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. A first nitride-based semiconductor layer is disposed over the buffer. A shield layer is disposed between the buffer and the first nitride-based semiconductor layer and includes a first isolation compound that has a bandgap greater than a bandgap of the first nitride-based semiconductor layer, in which the first isolation compound is made of at least one two-dimensional material which includes at least one metal element. A second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap less than the bandgap of the first isolation compound and greater than the bandgap of the first nitride-based semiconductor layer. The pair of S/D electrodes and the gate electrode are disposed over the second nitride-based semiconductor layer.