Abstract: A Roman shade is provided with a child safety device that includes a plurality of release devices configured for attachment to the shade material of the Roman shade. Each release device includes a female member and a male member that releasably connect together such that one member is attached to the shade material and the other member has an opening through which a lift cord passes. The male member and female member of each release device are sized and configured to separate when a release force acts on at least one of the female members and male members. A kit for retrofitting Roman shades to include such safety devices is also disclosed.

Abstract: The present invention provides an electronic wallet device for a mobile phone comprising a SIM card interface, comprising: a processing unit configured to provide a top-up service interface to the mobile phone and to receive and convert a first transaction instruction from the mobile phone into a top-up instruction; an authentication unit provided with an electronic wallet and configured to receive and convert the top-up instruction into an authorized top-up instruction and to write an amount to the electronic wallet according to the authorized top-up instruction; and an NFC antenna electrically connected to the authentication unit.

Abstract: An optical fiber connector includes a lens member integrally forming pairs of lens at a front face thereof, a seat member assembly retained on a rear face of the lens member and fiber cables. The seat member defines slim grooves aligned with the lens and the fiber cables are received and retained in the slim grooves.

Abstract: The invention discloses a general purpose interface controller, including a slave interface controller and a master interface controller, used to exchange data among master devices and slave devices in an electronic device. The slave interface controller receives data and a first control signal from one of the master devices, and converts the first control signal to a request signal. The master interface controller receives the data and the request signal from the slave interface controller, converts the request signal to a second control signal recognized by at least one of the slave devices, and forwards the data and the second control signal to the slave device.

Abstract: An optical-fiber connector includes an insulative main body having a pair of optical components extending forwardly therefrom. Each optical component defines at least one lens and a guiding post located at outside of the lens. Each guiding post defines a through hole extend through the guiding post and the main body in a front-to-back direction and fulfilled with the air for transmitting a test light. The test light from the through hole of the guiding post acts as an accurate measuring reference of the true position between the lens and the fiber because of having no displacement of the light path through a through hole.

Abstract: The present invention provides a high capacity hydrogen storage material in which a plural mesopore channels and fractal networks of nanopore channels communicating therewith and connecting to the micropores are formed in a microporous material, wherein a plural metal particles are formed on the surface of the mesopore and nanopore channels and of the micropores. In another embodiment, the present invention also provides a method for making the hydrogen storage material through oxidizing the microporous material so as to form a plural mesopore channels and fractal networks of nanopore channels, both of which are connected to the micropores to form a base for the deposition of metal particles capable of decomposing hydrogen molecules into hydrogen atoms. The high capacity hydrogen storage material is capable of increasing the capacity of hydrogen storage, and besides, the oxidizing process for making the hydrogen storage material is simple and has merits of saving cost.

Abstract: A bilateral conduction semiconductor device and a manufacturing method thereof are provided. The bilateral conduction semiconductor device includes an epitaxial layer having a first conductive type and a first trench, a first gate conductive layer disposed on a sidewall of the first trench, a second gate conductive layer disposed opposite to the first gate conductive layer, and a doped region having the first conductive type. The doped region is disposed in the epitaxial layer between the first gate conductive layer and the second gate conductive layer, and a doped concentration of the doped region is larger than a doped concentration of the epitaxial layer.

Abstract: A method and apparatus provide for simultaneously moving multiple semiconductor wafers in opposite directions while simultaneously performing processing operations on each of the wafers. The semiconductor wafers are orientated in coplanar fashion and are disposed on stages that simultaneously translate in opposite directions to produce a net system momentum of zero. The die of the respective semiconductor wafers are processed in the same spatial sequence with respect to a global alignment feature of the semiconductor wafer. A balance mass is not needed to counteract the motion of a stage because the opposite motions of the respective stages cancel each other.

Abstract: A power semiconductor device with drain voltage protection includes a semiconductor substrate, at least a trench gate transistor device and at least a trench ESD protection device. An upper surface of the semiconductor substrate has a first trench and a second trench. The trench gate transistor device is disposed in the first trench and the semiconductor substrate. The trench ESD protection device is disposed in the second trench, and includes a first doped region, a second doped region and a third doped region. The first doped region and the third doped region are respectively electrically connected to a drain and a gate of the trench gate transistor device.

Abstract: An electrical connector (100) comprises an insulative housing (1) defining a number of passageways (10) and shielding holes (14) arranged among the passageways, a conductive covering (5, 6) provided on a top surface of the insulative housing, a dielectric covering (7, 8) provided on a top surface of the conductive covering, a number of electrical contacts (2) receiving in the passageways and comprising a number of signal contacts (22) and grounding contacts (21), and a plurality of conductive elements (3) received in the shielding holes (14) and electrically connected to the grounding contacts (21) through the conductive covering (5, 6), the conductive elements (3) being insulated from the signal contacts (22).

Abstract: An analog-to-digital converter (ADC) for pipelined ADCs or cyclic ADCs is disclosed. The ADC includes at least one pair of two stages connected in series, and the two stages have different bits of resolution. An amplifier is shared by the pair of two stages such that the two stages operate in an interleaved manner. Accordingly, this stage-resolution scalable opamp-sharing technique is adaptable for pipelined ADC or cyclic ADC, which substantially reduces power consumption and increases operating speed.

Abstract: Three bonding materials are provided on a first plate. The first bonding material is located between the second and third bonding materials. The first bonding material is thicker than the other bonding materials. A second plate is provided on the first bonding material. All of the plates and the bonding materials are heated to the softening point of the first bonding material. A load is exerted on the first bonding material to reduce the thickness of the first bonding material to that of the second and third bonding materials and transfer the load to the second and third bonding materials from the first bonding material. The temperature is raised to and kept at the crystallization point of the first bonding material. The temperature is raised to the wetting point of the second and third bonding materials.

Abstract: A contact (1) includes a first contact pin (2), a second contact pin (3) and a spring (4). The first contact pin includes a mating end (26), a body (23) having a first body portion (232) and a second body portion (231), a pair of ear portions (24) and a pair of first blocking portions (22). The first body portion has a thickness greater than that of the second body portion. The second contact pin includes a pair of second blocking portions (32), and a pair of resilient beams (33) slidable between a latched position and an unlatched position. The resilient beams are confined by the ear portions. The resilient beams clasp the first body portion in the latched position. The spring is compressible between the pair of first blocking portions and the pair of second blocking portions.

Abstract: An overlapping trench gate semiconductor device includes a semiconductor substrate, a plurality of shallow trenches disposed on the semiconductor substrate, a first conductive layer disposed in the shallow trenches, a plurality of deep trenches respectively disposed in each shallow trench, a second conductive layer disposed in the deep trenches, a source metal layer and a gate metal layer. Each of the deep trenches extends into the semiconductor substrate under each shallow trench. The source metal layer is electrically connected to the second conductive layer, and the gate metal layer is electrically connected to the first conductive layer.

Abstract: The present invention provides an antenna device comprising: a contact substrate with a plurality of electrical contacts, an antenna substrate, and a connecting member connected between said contact substrate and said antenna substrate. Said connecting member is flexible and foldable and is provided with at least one corner portion. Said corner portion defines at least one horizontal section and at least one vertical section to render the antenna device better adaptability.

Abstract: Gate structures of CMOS device and the method for manufacturing the same are provided. A substrate having an NMOS region, a PMOS region, and a work function modulation layer disposed on the NMOS region and the PMOS region is provided. A nitrogen doping process is performed to dope nitrogen into a portion of the work function modulation layer disposed on the PMOS region so as to form an N-rich work function modulation layer disposed on the PMOS region. A nonmetallic conductive layer is formed blanketly covering the work function modulation layer and the N-rich work function modulation layer. A portion of the nonmetallic conductive layer, the work function modulation layer, and the N-rich work function modulation layer is removed to form a first gate in the NMOS region and a second gate in the PMOS region.

Abstract: A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4 and SF6, and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.

Abstract: A chip structure comprising a silicon substrate, a MOS device, dielectric layers, a metallization structure, a passivation layer, a plurality of metal layers and a polymer layer. The metallization structure comprises a first circuit layer and a second circuit layer over the first circuit layer, and comprises a damascene electroplated copper. The passivation layer is over the metallization structure and dielectric layers, the passivation layer including a first opening exposing a contact point of the metallization structure. The polymer layer is disposed over the passivation layer and the first metal layer, a second opening in the polymer layer being over a second contact point of the first metal layer, the polymer layer covering a top surface and sidewall of the first metal layer. The second contact point is connected to the first contact point through the first opening, the second opening not being vertically over the first opening.

Abstract: Indolinone compounds of formula (I) or (II): wherein A, R1, R2, R3, R4, R5, R6, R7, and n are defined herein. Also disclosed are methods for decreasing the activity of a protein kinase and for treating a protein kinase-related disease, such as cancer, with these compounds.

Abstract: A laminating apparatus includes a roller, an electro-heating shaft, a power transmitting and resilient member and a power transmitting and securing member. The roller is in contact with a thin film, moves through the thin film to heat and laminate the thin film to a sheet material. The electro-heating shaft is wrapped by the roller, transforms electric energy into thermal energy to heat the thin film, and drives rotation of the roller to move through the thin film. The power transmitting and resilient member is in contact with an axial end surface of the electro-heating shaft in an axial direction of the electro-heating shaft for transmitting electricity from a power source to the electro-heating shaft. The power transmitting and securing member is coupled to the electro-heating shaft for compressing the power transmitting and resilient member therebetween, thereby continuously transmitting the electricity from the power source to the electro-heating shaft via the power transmitting and securing member.