Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.

Abstract: A method for depositing a thin film onto a substrate is disclosed. In particular, the method forms a transitional metal silicate onto the substrate. The transitional metal silicate may comprise a lanthanum silicate or yttrium silicate, for example. The transitional metal silicate indicates reliability as well as good electrical characteristics for use in a gate dielectric material.

Abstract: A flyback power converter includes a transformer which has a primary winding, a secondary winding, and an auxiliary winding; a power switch controlling the conduction of the primary winding; and a control circuit generating a control signal to control the power switch, wherein the control circuit is an integrated circuit having a current sensing pin for obtaining a current sensing signal of a current through the power switch. The flyback power converter further includes a temperature-sensitive resistor or a mode detection resistor coupled between the auxiliary winding and the current sensing pin. The temperature-sensitive resistor provides a temperature-related signal for the control circuit to perform an over-temperature protection, or the temperature-sensitive resistor provides a mode detection signal for the control circuit to determine an operation mode of the flyback power converter.

Abstract: The present invention provides a flyback power converter with a programmable output and a control circuit and a control method thereof. The flyback power converter converts an input voltage to a programmable output voltage according to a setting signal, wherein the programmable output voltage switches between different levels. The flyback power converter includes: a transformer circuit, a power switch circuit, a current sense circuit, an opto-coupler circuit, and a control circuit. The control circuit adaptively adjusts an operation signal according to a level of the programmable output voltage, to maintain a same or relatively higher operation frequency of the operation signal when the programmable output voltage switches to a relatively lower level, so as to maintain a phase margin while supplying the same output current.

Abstract: A semiconductor device is disclosed, which includes: a substrate having a substrate body and a plurality of conductive pads formed on the substrate body, wherein each of the conductive pads has at least an opening formed in a first surface thereof; a semiconductor component having a plurality of bonding pads; a plurality of conductive elements formed between the bonding pads and the conductive pads and in the openings of the conductive pads; and an encapsulant formed between the substrate and the semiconductor component for encapsulating the conductive elements, thereby strengthening the bonding between the conductive elements and the conductive pads and consequently increasing the product yield.

Abstract: An electronic device package and manufacturing method are provided, including steps of: providing a carrier having at least an electronic element and at least a package block disposed thereon, wherein the package block has a plurality of conductive posts bonded to the carrier; forming an encapsulant on the carrier for encapsulating the electronic element and the package block; and removing the carrier so as to expose the electronic element and the conductive posts from a surface of the encapsulant. As such, the invention dispenses with formation of through holes in the encapsulant for forming the conductive posts as in the prior art, thereby saving the fabrication cost.

Abstract: A control circuit of a power converter includes: an input signal detection circuit, configured to operably detect a magnitude of an input signal to generate a detection signal; a clock generation circuit, configured to operably generate a clock signal; an error detection circuit, configured to operably generate an error signal according to a reference signal and a feedback signal; a control signal generation circuit, coupled with the clock generation circuit and the error detection circuit, configured to operably control a switching frequency of a power switch according to the clock signal and the error signal; and a reverse adjusting circuit, coupled with the input signal detection circuit, configured to operably adjust the clock generation circuit or the control signal generation circuit according to the detection signal to configure the switching frequency of the power switch to be inversely proportional to the magnitude of the input signal.

Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.

Abstract: A mixed mode compensation circuit for a power converter generate a digital signal according to a reference signal and a feedback signal which is related to the output voltage of the power converter, convert the digital signal into a first analog signal, offset the first analog signal with a variable offset value to generate a second analog signal, and filter out high-frequency components of the second analog signal to generate a third analog signal for stable output voltage of the power converter. The mixed mode compensation does not require large capacitors, and thus the circuit can be integrated into an integrated circuit.

Abstract: A frequency jittering control circuit for a PFM power supply includes a pulse frequency modulator to generate a frequency jittering control signal to switch a power switch to generate an output voltage. The frequency jittering control circuit jitters an input signal or an on-time or off-time of the pulse frequency modulator to jitter the switching frequency of the power switch to thereby improve EMI issue.

Abstract: In some aspects, methods of forming a metal selenide or metal telluride thin film are provided. According to some methods, a metal selenide or metal telluride thin film is deposited on a substrate in a reaction space in a cyclical deposition process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase selenium or tellurium reactant. In some aspects, methods of forming three-dimensional architectures on a substrate surface are provided. In some embodiments, the method includes forming a metal selenide or metal telluride interface layer between a substrate and a dielectric. In some embodiments, the method includes forming a metal selenide or metal telluride dielectric layer between a substrate and a conductive layer.

Abstract: In some aspects, methods of forming a metal chalcogenide thin film are provided. According to some methods, a metal chalcogenide thin film is deposited on a substrate in a reaction space in a cyclical deposition process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase chalcogen reactant. In some aspects, methods of forming three-dimensional structure on a substrate surface are provided. In some embodiments, the method includes forming a metal chalcogenide dielectric layer between a substrate and a conductive layer. In some embodiments the method includes forming an MIS-type contact structure including a metal chalcogenide dielectric layer.

Abstract: A package structure is disclosed, which includes a substrate having a body, a plurality of conductive pads formed on the body and a surface passivation layer formed on the body and having a plurality of openings for exposing the conductive pads; a plurality of conductive vias formed in the openings of the surface passivation layer and electrically connected to the conductive pads; a plurality of circuits formed on the surface passivation layer and electrically connected to the conductive vias, wherein the circuits have a plurality of electrical contacts; at least a pattern portion formed on the surface passivation layer and intersecting with the circuits; and a second passivation layer formed on the surface passivation layer, the circuits and the pattern portion d having a plurality of openings for exposing portions of the electrical contacts of the circuits, thereby strengthening the bonding between the circuits and the passivation layers.

Abstract: A packaging substrate and a package structure are provided. The packaging substrate includes a plurality of dielectric layers, two of which have a difference in thickness; and a plurality of circuit layers alternately stacked with the dielectric layers. Therefore, the package warpage encountered in the prior art is avoided.

Abstract: In some embodiments, a semiconductor surface having a high mobility semiconductor may be effectively passivated by nitridation, preferably using hydrazine, a hydrazine derivative, or a combination thereof. The surface may be the semiconductor surface of a transistor channel region. In some embodiments, a semiconductor surface oxide layer is formed at the semiconductor surface and the passivation is accomplished by forming a semiconductor oxynitride layer at the surface, with the nitridation contributing nitrogen to the surface oxide to form the oxynitride layer. The semiconductor oxide layer may be deposited by atomic layer deposition (ALD) and the nitridation may also be conducted as part of the ALD.

Abstract: In some embodiments, a semiconductor surface may be effectively passivated by nitridation, preferably using hydrazine, a hydrazine derivative, or a combination thereof. The surface may be the semiconductor surface of a transistor channel region. In some embodiments, native oxide is removed from the semiconductor surface and the surface is subsequently nitrided. In some other embodiments, a semiconductor surface oxide layer is formed at the semiconductor surface and the passivation is accomplished by forming a semiconductor oxynitride layer at the surface, with the nitridation contributing nitrogen to the surface oxide to form the oxynitride layer. The semiconductor oxide layer may be deposited by atomic layer deposition (ALD) and the nitridation may also be conducted as part of the ALD.

Abstract: A mixed mode compensation circuit for a power converter generate a digital signal according to a reference signal and a feedback signal which is related to the output voltage of the power converter, convert the digital signal into a first analog signal, offset the first analog signal with a variable offset value to generate a second analog signal, and filter out high-frequency components of the second analog signal to generate a third analog signal for stable output voltage of the power converter. The mixed mode compensation does not require large capacitors, and thus the circuit can be integrated into an integrated circuit.

Abstract: A mixed mode compensation circuit for a power converter generate a digital signal according to a reference signal and a feedback signal which is related to the output voltage of the power converter, convert the digital signal into a first analog signal, offset the first analog signal with a variable offset value to generate a second analog signal, and filter out high-frequency components of the second analog signal to generate a third analog signal for stable output voltage of the power converter. The mixed mode compensation does not require large capacitors, and thus the circuit can be integrated into an integrated circuit.

Abstract: A mixed mode compensation circuit for a power converter generate a digital signal according to a reference signal and a feedback signal which is related to the output voltage of the power converter, convert the digital signal into a first analog signal, offset the first analog signal with a variable offset value to generate a second analog signal, and filter out high-frequency components of the second analog signal to generate a third analog signal for stable output voltage of the power converter. The mixed mode compensation does not require large capacitors, and thus the circuit can be integrated into an integrated circuit.

Abstract: A frequency jittering control circuit for a PFM power supply includes a pulse frequency modulator to generate a frequency jittering control signal to switch a power switch to generate an output voltage. The frequency jittering control circuit jitters an input signal or an on-time or off-time of the pulse frequency modulator to jitter the switching frequency of the power switch to thereby improve EMI issue.