Abstract: A method of forming a high electron mobility transistor (HEMT) includes a first III-V compound layer and a second III-V compound layer disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A source feature and a drain feature are disposed on the second III-V compound layer. A p-type layer is disposed on a portion of the second III-V compound layer between the source feature and the drain feature. A gate electrode is disposed on the p-type layer. A capping layer is disposed on the second III-V compound layer.

Abstract: A multi-antenna system includes: a server; a first antenna group, provided on a base station and including multiple first antennas including a first representative antenna and a first non-representative antenna, the base station performing intra-group channel estimation to obtain and transmit to the server multiple first inner channel estimation coefficients between the first representative antenna and the first non-representative antenna, and serving a user device; and a reference device, communicating with the server and the first antennas, performing channel estimation between the reference device and the first representative antenna to obtain and transmit to the server multiple first outer channel estimation coefficients between the reference device and the first representative antenna. The server calculates a precoding matrix according to the first inner and first outer channel estimation coefficients, and the base station performs data transmission with the user device according to the precoding matrix.

Abstract: A high electron mobility transistor (HEMT) includes a first compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A salicide source feature and a salicide drain feature are in contact with the first III-V compound layer through the second III-V compound layer. A gate electrode is disposed over a portion of the second compound layer between the salicide source feature and the salicide drain feature.

Abstract: A high electron mobility transistor (HEMT) includes a first III-V compound layer and a second III-V compound layer disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A source feature and a drain feature are disposed on the second III-V compound layer. A p-type layer is disposed on a portion of the second III-V compound layer between the source feature and the drain feature. A gate electrode is disposed on the p-type layer. A capping layer is disposed on the second III-V compound layer.

Abstract: An inflation identification connector and an air mattress system having the same is provided. The inflation identification connector is insertable into a connection seat of a gas delivery host. The connection seat has a light detection component coupled to a controller disposed in the gas delivery host. The inflation identification connector includes a body and an identification structure. The detection result of the light detection component depends on the identification structure and thus is conducive to identification. Upon its insertion into the connection seat, the inflation identification connector is identified by the gas delivery host, enhancing ease of use and protecting manual operation against mistakes. The gas delivery host is not only applicable to different types of air mattresses but also conducive to streamlined management of the air mattress system and reduction of management costs and risks.

Abstract: The invention provides an intra-needle ultrasound system and its method of use for analysis, tracking, and display of pleura in millimeter-scale resolution. This method includes the following steps: Assembling the puncture needle and intra-needle ultrasound transducer, which can generate and receive ultrasound waves at the needle tip. To transform the axial ultrasonic signal into a figure, that can help to identify different anatomic structures according to the corresponding feature of ultrasonic RF (Radio Frequency) signal, and to set the region of interest according to corresponding RF feature of amplitude and depth. This invention can indicate the distance between the ultrasound needle tip and pleura in a real-time fashion, and to identify the best position for anesthetic injection in the paravertebral block (PVB) and the intercostals nerve block (ICNB). The system can also help to avoid damage to the pleura and lung during the nerve block procedure.

Abstract: A wireless access method for a communication system is provided. The wireless access method is adapted to a base station, and includes the following steps. A first control information is transmitted through a first frequency band. A second control information is transmitted through a second frequency band. The time difference between the transmission time points of the first control information and the second control information is less than a slot time, and the first frequency band is different from the second frequency band.

Abstract: A communication device and a transmitting and receiving method thereof. The communication device configured to transmit a first signal includes a code block (CB) segmentation unit, a plurality of first processing units, and a first resource mapping module. The CB segmentation unit is configured to divide at least one first transport block corresponding to the first signal into a plurality of first code blocks. Each of the first code blocks corresponds to one of the first processing units. The first processing units encode the first code blocks to obtain a plurality of first symbols. The resource mapping module performs resource mapping of the first symbols to obtain a first resource block.

Abstract: Some embodiments of the present disclosure relate to a HEMT. The HEMT includes a heterojunction structure having a second III/V semiconductor layer arranged over a first III/V semiconductor layer. Source and drain regions are arranged over the substrate and spaced apart laterally from one another. A gate structure is arranged over the heterojunction structure and arranged between the source and drain regions. A first passivation layer is disposed about sidewalls of the gate structure and extending over an upper surface of the gate structure, wherein the first passivation layer is made of a III-V material. A second passivation layer overlies the first passivation layer and made of a material composition different from a material composition of the first passivation layer. The second passivation layer has a thickness greater than that of the first passivation layer.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip has a channel layer disposed over a substrate and including a first material. An active layer is over the channel layer and includes a second material different than the first material. An isolation structure has a horizontally extending segment that is below the channel layer and one or more vertically extending segments that are directly over the horizontally extending segment. One or more contacts extend through the channel layer and the active layer to contact the one or more vertically extending segments.

Abstract: A communication system and an operating method thereof are provided. The communication system includes at least one user equipment, at least one remote radio head (RRH), a measuring unit, a set determining unit and an antenna selecting unit. The RRH is electrically connected to a plurality of antennas. The measuring unit is for controlling a measurement of a signal strength of the at least one user equipment. The set determining unit is used for selecting one of a plurality of antenna configuration sets according to the signal strength for the at least one user equipment. Each of the antenna configuration sets includes a plurality of antenna configurations. Each of the antenna configurations is composed of P of a plurality of antennas. The antenna selecting unit is used for allocating one of the antenna configurations from the antenna configuration set which is selected for the at least one user equipment.

Abstract: Some embodiments of the present disclosure relate to a high electron mobility transistor (HEMT) which includes a heterojunction structure arranged over a semiconductor substrate. The heterojunction structure includes a first III/V semiconductor layer, and a second III/V semiconductor layer arranged over the first III/V semiconductor layer. Source and drain regions are arranged over the second III/V semiconductor layer and are spaced apart laterally from one another. A gate structure is arranged over the heterojunction structure and is arranged between the source and drain regions. The gate structure is made of a third III-nitride material. A first passivation layer is disposed about sidewalls of the gate structure and is made of a fourth III-nitride material.

Abstract: An isolation structure for active devices is provided. In some embodiments, the isolation structure is used in a transistor. The transistor includes a substrate having a first doping type. The transistor also includes a channel layer positioned over the substrate and comprising a first section and a second section. The transistor further includes an active layer positioned over the channel layer. The isolation structure includes a horizontal segment, a first vertical segment, and a second vertical segment. The horizontal segment is arranged below the second section of the channel layer and continuously extends between the first vertical segment and the second vertical segment. The isolation structure has a second doping type that is different than the first doping type.

Abstract: A transistor includes a first layer over a substrate. The transistor also includes a second layer over the first layer. The transistor further includes a carrier channel layer at an interface of the first layer and the second layer. The transistor additionally includes a gate structure, a drain, and a source over the second layer. The transistor also includes a passivation material in the second layer between an edge of the gate structure and an edge of the drain in a top-side view. The carrier channel layer has a smaller surface area than the first layer between the edge of the gate structure and the edge of the drain in the top-side view.

Abstract: A semiconductor structure and method for manufacturing thereof are provided. The semiconductor structure includes a silicon substrate having a first surface, a III-V layer on the first surface of the silicon substrate and over a first active region, and an isolation region in a portion of the III-V layer extended beyond the first active region. The first active region is in proximal to the first surface. The method includes the following operations. A silicon substrate having a first device region and a second device region is provided, a first active region is defined in the first device region, a III-V layer is formed on the silicon substrate, an isolation region is defined across a material interface in the III-V layer by an implantation operation, and an interconnect penetrating through the isolation region is formed.

Abstract: A device includes a first transistor having a first source terminal, a first drain terminal, and a first gate terminal; and a second transistor having a second source terminal, a second drain terminal, and a second gate terminal. The second source terminal is coupled to the first gate terminal and the first source terminal is coupled to the second gate terminal. The first transistor has a first threshold voltage, and the second transistor has a second threshold voltage different from the first threshold voltage.

Abstract: A method, system, and computer product for protecting personal privacy of one or more persons in a photo are provided. The method comprises receiving a photo including a face of at least one person, performing face recognition on the at least one person in the photo, determining a cross-relationship value between another person and the at least one person, based on a degree of closeness between said another person and the at least one person, and determining whether to show said another person the face of the at least one person in the photo, based on the cross-relationship value.

Abstract: A high electron mobility transistor (HEMT) includes a first compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A salicide source feature and a salicide drain feature are in contact with the first III-V compound layer through the second III-V compound layer. A gate electrode is disposed over a portion of the second compound layer between the salicide source feature and the salicide drain feature.

Abstract: A transistor includes a first layer over a substrate. The transistor also includes a second layer over the first layer. The transistor further includes a carrier channel layer at an interface of the first layer and the second layer. The transistor additionally includes a gate structure, a drain, and a source over the second layer. The transistor also includes a passivation material in the second layer between an edge of the gate structure and an edge of the drain in a top-side view. The carrier channel layer has a smaller surface area than the first layer between the edge of the gate structure and the edge of the drain in the top-side view.

Abstract: An isolation structure for active devices is provided. In some embodiments, the isolation structure is used in a transistor. The transistore includes a substrate having a first doping type. The transistor also includes a channel layer positioned over the substrate and comprising a first section and a second section. The transistor further includes an active layer positioned over the channel layer. The isolation structure includes a horizontal segment, a first vertical segment, and a second vertical segment. The horizontal segment is arranged below the second section of the channel layer and continuously extends between the first vertical segment and the second vertical segment. The isolation structure has a second doping type that is different than the first doping type.