Abstract: A bracket assembly for a server to prevent tilting during transportation includes at least two cabinet columns and two brackets. The two brackets are spaced apart from each other. The at least two cabinet columns fixed on the two brackets. Each bracket includes a fixing portion, a supporting portion, and at least one protrusion. The supporting portion extends from an edge of the fixing portion toward the other bracket, the protrusion from the fixing portion is spaced apart from the supporting portion. The supporting portion and protrusion are disposed on a same side of the fixing portion. A bracket structure and server assembly includes the bracket assembly and a housing, each of two parallel sidewalls of the housing has a sliding groove to clamp the protrusions.

Abstract: An adapter device enabling a peripheral component interconnect express (PCIe) slot in a server to additionally accept an open compute project (OCP) card includes a bracket assembly compatible with an OCP card and a server. The adapter device comprises a chassis, a front-end bracket, an adapter assembly, and a rail assembly. The front-end bracket defines a first inserting port for OCP card insertion, the adapter assembly comprises OCP interface, adapter circuit board, and PCIe interface. The PCIe interface is connected to the adapter circuit board, and the adapter circuit board provides electrical connection and conversion between OCP interface and PCIe interface. The rail assembly between the front-end bracket and the OCP interface carries in the OCP card when the card is inserted.

Abstract: A multi-loop error amplifier circuit for generating an error amplification signal includes: a first operational transconductance amplifier (OTA) including a first current output stage which generates a first transconductance amplification current in a predetermined current direction according to a first voltage difference between a positive terminal and a negative input terminal of the first OTA; a second OTA including a second current output stage which generates a second transconductance amplification current in the predetermined current direction according to a second voltage difference between a positive terminal and a negative input terminal of the second OTA. The first and the second current output stages are coupled in series to generate a first error output current. The error amplification signal is generated according to the first error output current which is equal to the smaller one of the first and the second transconductance amplification currents.

Abstract: A fixing auxiliary device includes a support frame, an elastic member, and a plurality of first support members. The first support member includes a first segment, a second segment, and a third segment which are connected in sequence. The third segment is detachably connected to the support frame, the first segment is configured to extend into a first component. An end of the second segment facing away from the third segment includes a first stop surface configured for stopping the first component from moving towards the support frame. The elastic member is configured to provide an elastic force to a second component to press against the support frame.

Abstract: The present disclosure provides a network connection configuration method and an apparatus thereof.

Abstract: Semiconductor devices and methods are provided which facilitate improved thermal conductivity using a high-kappa dielectric bonding layer. In at least one example, a device is provided that includes a first substrate. A semiconductor device layer is disposed on the first substrate, and the semiconductor device layer includes one or more semiconductor devices. Frontside interconnect structure are disposed on the semiconductor device layer, and a bonding layer is disposed on the frontside interconnect structure. A second substrate is disposed on the bonding layer. The bonding layer has a thermal conductivity greater than 10 W/m·K.

Abstract: The present disclosure relates to a method for detection reaction volume deviations in a digital polymerase chain reaction (dPCR) and to a method for determining the amount or concentration of a nucleic acid of interest in a sample with dPCR.

Abstract: The disclosed embodiments concern methods, apparatus, systems and computer program products for determining sequences of interest using unique molecular index sequences that are uniquely associable with individual polynucleotide fragments, including sequences with low allele frequencies and long sequence length. In some implementations, the unique molecular index sequences include variable-length nonrandom sequences. In some implementations, the unique molecular index sequences are associated with the individual polynucleotide fragments based on alignment scores indicating similarity between the unique molecular index sequences and subsequences of sequence reads obtained from the individual polynucleotide fragments. System, apparatus, and computer program products are also provided for determining a sequence of interest implementing the methods disclosed.

Abstract: A methane cracking apparatus includes a supply pipeline that supplies a gas, a reactor having an interior space, and in which a catalyst for decomposing the gas may be disposed in the interior space, an agitator provided in the interior space and that agitates a material in the interior space, a first discharge pipeline connected to the reactor and that discharges decomposition materials generated as the gas may be decomposed, and a second discharge pipeline connected to the reactor, that discharges the decomposition materials, and disposed on an upper side of the first discharge pipeline.

Abstract: A semiconductor device includes a substrate, a semiconductor fin protruding from the substrate, an isolation layer disposed above the substrate, a dielectric fin with a bottom portion embedded in the isolation layer, and a gate structure over top and sidewall surfaces of the semiconductor fin and the dielectric fin. The semiconductor fin has a first sidewall and a second sidewall facing away from the first sidewall. The isolation layer includes a first portion disposed on the first sidewall of the semiconductor fin and a second portion disposed on the second sidewall of the semiconductor fin. A top portion of the dielectric fin includes an air pocket with a top opening sealed by the gate structure.

Abstract: In an embodiment, a device includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first epitaxial layer on the first fin, the first epitaxial layer having a first dopant concentration of boron. The device also includes and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second dopant concentration of boron, the second dopant concentration being greater than the first dopant concentration.

Abstract: A miniature backlight kit includes a covering member, a light-shading element, a light guide element, a housing and a light-emitting unit. The light-emitting unit is disposed within a first concave structure of the light-shading element. The light-shading element is disposed within a second concave structure of the light guide element. The light guide element is covered by the lateral wall of the housing. The light-emitting unit emits a light beam. The light beam is reflected to the lateral wall of the housing by the light guide element. Consequently, a luminance gradient region is formed on the surface of the lateral wall of the housing.

Abstract: An embodiment electrochemical device includes a first separator including a first channel and a first land disposed in a first direction, a second separator including a second channel and a second land disposed in a second direction intersecting the first direction, the second separator being stacked on the first separator, and contact patterns provided on the first separator and disposed on the first channel so as to be in contact with the second separator.

Abstract: The present disclosure provides a display device and a manufacturing method thereof. The manufacturing method of the display device includes providing a first substrate, providing a second substrate, forming a plurality of spacers on the first substrate or the second substrate by a printing process, and attaching the first substrate and the second substrate to each other, wherein the first substrate and the second substrate are separated by the spacers. The first substrate includes a plurality of light-emitting elements, the second substrate includes a plurality of optical filter elements, and the light-emitting elements overlap the optical filter elements, respectively.

Abstract: A device includes a first semiconductor structure, a second semiconductor structure, and an isolation structure which is disposed between the first and second semiconductor structures, and which includes a dielectric material having a dielectric constant higher than 8 and lower than 16. A method for manufacturing the device is also disclosed.

Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.

Abstract: Disclosed is a catalyst complex for a fuel cell. The catalyst complex includes a support including carbon (C), platinum (Pt) supported on the support, and an iridium (Ir) compound supported on the support, and the iridium compound includes at least one of iridium oxide represented by Chemical Formula 1, IrOx, and iridium-transition-metal oxide represented by Chemical Formula 2, IrMOx, wherein M is a transition metal selected from the group consisting of Fe, Co, Cu, Ni and combinations thereof, and x is from 1 to 2.

Abstract: A method includes forming a plurality of semiconductor regions on a wafer, placing the wafer in an etching chamber, globally heating the wafer using a heating source, and projecting a laser beam on the wafer. When the wafer is heated by both of the heating source and the laser beam, the plurality of semiconductor regions on the wafer are etched.

Abstract: The disclosed embodiments concern methods, systems and computer program products for determining sequences of interest using unique molecular indexes (UMIs) that are uniquely associable with individual polynucleotide fragments, including sequences with low allele frequencies or long sequence length. In some implementations, the UMIs include variable-length nonrandom UMIs (vNRUMIs). Methods and systems for making and using sequencing adapters comprising vNRUMIs are also provided.

Abstract: A rotating assembly includes a first handle; the first handle includes a connecting part. The connecting part has first and second extensions and the connecting part is rotatably connected to a box holding one or more devices. The first and second extensions are arranged on opposite sides of the connecting part, the first extension can rotate with the connecting part until it rests on a base, on which base the box is rotatably arranged. The first extension and the second extension extend to both sides of the connecting part to lessen the force required for driving the box to rotate.