Abstract: A first ramp signal having a potential which is changed with time in a first amplitude range in a first period and a second ramp signal in which a potential is changed with time in a second amplitude range which includes the first amplitude range and which has maximum amplitude larger than maximum amplitude of the first amplitude range and an amount of the change of the potential per unit time is the same as an amount of the change of the potential per unit time of the first ramp signal are generated, and comparison between an optical signal and the first ramp signal and comparison between the optical signal and the second ramp signal are performed in parallel.

Abstract: A solid-state imaging device including a plurality of pixels including a photoelectric conversion portion, a charge holding portion accumulating a signal charge transferred from the photoelectric conversion portion, and a floating diffusion region to which the signal charge of the charge holding portion is transferred, wherein the photoelectric conversion portion includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type formed under the first semiconductor region, the charge holding portion includes a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type formed under the third semiconductor region, and a p-n junction between the third semiconductor region and the fourth semiconductor region is positioned deeper than a p-n junction between the first semiconductor region and the second semiconductor region.

Abstract: Provided is an imaging device that performs multiple AD conversions including a first AD conversion and a second AD conversion for one pixel signal. A first memory has a bit width of N+1 bits (N is a natural number) and holds the least significant bit to the N+1th bit of a digital value obtained by the first AD conversion, and second memory has a bit width of M bits (M is a natural number) greater than N+1 bits and holds the least significant bit to the Mth bit of a digital value obtained by the second AD conversion.

Abstract: A first ramp signal having a potential which is changed with time in a first amplitude range in a first period and a second ramp signal in which a potential is changed with time in a second amplitude range which includes the first amplitude range and which has maximum amplitude larger than maximum amplitude of the first amplitude range and an amount of the change of the potential per unit time is the same as an amount of the change of the potential per unit time of the first ramp signal are generated, and comparison between an optical signal and the first ramp signal and comparison between the optical signal and the second ramp signal are performed in parallel.

Abstract: A solid-state imaging device including a plurality of pixels including a photoelectric conversion portion, a charge holding portion accumulating a signal charge transferred from the photoelectric conversion portion, and a floating diffusion region to which the signal charge of the charge holding portion is transferred, wherein the photoelectric conversion portion includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type formed under the first semiconductor region, the charge holding portion includes a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type formed under the third semiconductor region, and a p-n junction between the third semiconductor region and the fourth semiconductor region is positioned deeper than a p-n junction between the first semiconductor region and the second semiconductor region.

Abstract: A first ramp signal having a potential which is changed with time in a first amplitude range in a first period and a second ramp signal in which a potential is changed with time in a second amplitude range which includes the first amplitude range and which has maximum amplitude larger than maximum amplitude of the first amplitude range and an amount of the change of the potential per unit time is the same as an amount of the change of the potential per unit time of the first ramp signal are generated, and comparison between an optical signal and the first ramp signal and comparison between the optical signal and the second ramp signal are performed in parallel.

Abstract: Provided is an imaging device that performs multiple AD conversions including a first AD conversion and a second AD conversion for one pixel signal. A first memory has a bit width of N+1 bits (N is a natural number) and holds the least significant bit to the N+1th bit of a digital value obtained by the first AD conversion, and second memory has a bit width of M bits (M is a natural number) greater than N+1 bits and holds the least significant bit to the Mth bit of a digital value obtained by the second AD conversion.

Abstract: An imaging apparatus includes first and second substrates respectively including first pixels and second pixels arranged thereon. The first pixels each includes a first photoelectric conversion unit and a first transistor configured to output a first signal based on a charge generated in the first photoelectric conversion unit. The second pixels each includes a second photoelectric conversion unit and a second transistor configured to output a second signal based on a charge generated in the second photoelectric conversion unit. The first and second substrates are stacked via an insulation film.

Abstract: According to an aspect of the present invention, there is provided an imaging device including: a plurality of pixels, each pixel including a photoelectric conversion unit that photoelectrically converts received light, a read node in which a signal charge generated in the photoelectric conversion unit is accumulated, and a first readout circuit that performs analog-to-digital conversion to convert a signal based on the signal charge accumulated in the read node into a digital signal; and a second readout circuit that reads a signal based on the signal charge, the signal having a smaller amplitude than a resolution of the analog-to-digital conversion of the first readout circuit.

Abstract: A photoelectric conversion apparatus includes a pixel. The pixel includes a transfer transistor, a reset transistor, an amplification transistor, and a selection transistor. The photoelectric conversion apparatus includes a control line, a voltage control unit, and a current source. The control line is electrically connected to a source of the amplification transistor. The voltage control unit controls the voltage of the control line. The current source outputs a reference current. A path of a current from the amplification transistor is separated from a path of the reference current. The photoelectric conversion apparatus includes a comparison unit configured to compare the current from the amplification transistor with the reference current. During a period in which a transistor connected to the gate of the amplification transistor is in a conductive state, the selection transistor is in a non-conductive state.

Abstract: A sensor has an image sensing unit including pixel blocks, and a readout unit for reading out a signal from the image sensing unit. The pixel block includes a photoelectric converter, first and second transistors, and a current source. First main electrodes of the first and second transistors are connected to a common node, and the current source is provided between the common node and a predetermined voltage. A signal readout operation includes an operation in which a voltage corresponding to charges in the photoelectric converter is supplied to a control electrode of the first transistor, and a temporally changing reference voltage is supplied to a control electrode of the second transistor. The readout unit reads out a signal from the image sensing unit via a second main electrode of the first transistor.

Abstract: A sensor has an image sensing unit including pixel blocks, and a readout unit for reading out a signal from the image sensing unit. The pixel block includes a photoelectric converter, first and second transistors, and a current source. First main electrodes of the first and second transistors are connected to a common node, and the current source is provided between the common node and a predetermined voltage. A signal readout operation includes an operation in which a voltage corresponding to charges in the photoelectric converter is supplied to a control electrode of the first transistor, and a temporally changing reference voltage is supplied to a control electrode of the second transistor. The readout unit reads out a signal from the image sensing unit via a second main electrode of the first transistor.

Abstract: A photoelectric conversion device includes a photoelectric converter, a transistor having a gate to which a voltage corresponding to charges generated by the photoelectric converter is supplied, a control line connected to a first main electrode of the transistor, and a readout unit configured to read out a signal corresponding to a voltage of the gate, and a voltage controller configured to change a voltage of the control line. The readout unit generates a digital signal corresponding to the voltage of the gate, based on a current flowing through a second main electrode of the transistor during a period in which the voltage controller changes the voltage of the control line.

Abstract: An imaging apparatus is provided which, in a case where an optical signal is smaller than a threshold, performs more AD conversions for generating digital signals than the number of times of AD conversions in a case where an optical signal is larger than the threshold.

Abstract: A solid-state imaging device includes a pixel, a comparator outputting control signal when magnitude relationship between pixel signal and reference signal is inverted, a counter circuit unit outputting N-bit count signal, a memory unit holding each bit of the count signal, wherein the count value is corrected according to the relationship between lower count value represented by lower count signal group including LSB to M-th bit of the count signal, and the upper count value represented by upper count signal group including (M+1)-th to N-th bits of the count signal. The lower count signal group comprises M-bit Gray code count signal of LSB to M-th bit of the count signal and a binary code count signal of (M+1)-th bit of the count signal, and the upper count signal group comprises (N-M) bit Gray code signal whose LSB is (M+1)-th bit of the count signal.

Abstract: A solid-state imaging device including a plurality of pixels including a photoelectric conversion portion, a charge holding portion accumulating a signal charge transferred from the photoelectric conversion portion, and a floating diffusion region to which the signal charge of the charge holding portion is transferred, wherein the photoelectric conversion portion includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type formed under the first semiconductor region, the charge holding portion includes a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type formed under the third semiconductor region, and a p-n junction between the third semiconductor region and the fourth semiconductor region is positioned deeper than a p-n junction between the first semiconductor region and the second semiconductor region.

Abstract: A solid-state imaging device including a plurality of pixels including a photoelectric conversion portion, a charge holding portion accumulating a signal charge transferred from the photoelectric conversion portion, and a floating diffusion region to which the signal charge of the charge holding portion is transferred, wherein the photoelectric conversion portion includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type formed under the first semiconductor region, the charge holding portion includes a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type formed under the third semiconductor region, and a p-n junction between the third semiconductor region and the fourth semiconductor region is positioned deeper than a p-n junction between the first semiconductor region and the second semiconductor region.

Abstract: A solid-state imaging device includes a pixel, a comparator outputting control signal when magnitude relationship between pixel signal and reference signal is inverted, a counter circuit unit outputting N-bit count signal, a memory unit holding each bit of the count signal, wherein the count value is corrected according to the relationship between lower count value represented by lower count signal group including LSB to M-th bit of the count signal, and the upper count value represented by upper count signal group including (M+1)-th to N-th bits of the count signal. The lower count signal group comprises M-bit Gray code count signal of LSB to M-th bit of the count signal and a binary code count signal of (M+1)-th bit of the count signal, and the upper count signal group comprises (N-M) bit Gray code signal whose LSB is (M+1)-th bit of the count signal.

Abstract: Provided is an imaging device that performs multiple AD conversions including a first AD conversion and a second AD conversion for one pixel signal. A first memory has a bit width of N+1 bits (N is a natural number) and holds the least significant bit to the N+1th bit of a digital value obtained by the first AD conversion, and second memory has a bit width of M bits (M is a natural number) greater than N+1 bits and holds the least significant bit to the Mth bit of a digital value obtained by the second AD conversion.

Abstract: An imaging apparatus is provided which, in a case where an optical signal is smaller than a threshold, performs more AD conversions for generating digital signals than the number of times of AD conversions in a case where an optical signal is larger than the threshold.